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71. 发明专利

JP2009191365A Metal film production device, and metal film production method 审中-公开
标题翻译：金属膜生产装置和金属膜生产方法
公开(公告)号：JP2009191365A
公开(公告)日：2009-08-27
申请号：JP2009068220
申请日：2009-03-19
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： HORI KEIICHI , IRIE TAKAYUKI , NOGUCHI HIRONORI , SATAKE KOJI , SAKAMOTO HITOSHI
IPC分类号： C23C16/448 , H01L21/28 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a metal film production device and a metal film production method by which a film to be deposited is excellent in film thickness uniformity.
SOLUTION: A substrate 3 is installed in a chamber 1, a gaseous starting material comprising halogens is fed to the vicinity of a metallic member 11 arranged at the inside of the chamber 1, further, plasma 15 of the gaseous starting material is generated, so as to produce the radicals of the halogens, by the radicals of the halogens, the metallic material 11 is etched, so as to produce a precursor 16 composed of the metallic components comprised in the metallic member and the halogens, and the temperature of the substrate 3 is controlled to the one lower than the metallic member 11. Further, the temperature distribution in the plane of the substrate 3 is made lower at the peripheral part and is made higher at the central part, a precursor 16 is adsorbed on the substrate 3, and further, the adsorbed precursor 16 is reduced by the radicals of the halogens, so as to produce a metal film.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种金属膜制造装置和金属膜制造方法，通过该方法，待沉积的膜的膜厚度均匀性优异。解决方案：将基板3安装在室1中，将含有卤素的气态原料供给到设置在室1内部的金属构件11的附近，气态原料的等离子体15为产生卤素原子，通过卤素的自由基蚀刻金属材料11，从而制成由金属构件和卤素中所含的金属成分构成的前体16，温度将基板3的温度分布控制在比金属部件11低的位置。此外，基板3的平面内的温度分布在周边部分变低，在中心部分变得更高，前体16被吸附在基板3，并且进一步地，吸附的前体16被卤素的自由基还原，以便产生金属膜。版权所有（C）2009，JPO＆INPIT

72. 发明专利

JP2009190035A Trap apparatus 审中-公开
标题翻译： TRAP APPARATUS
公开(公告)号：JP2009190035A
公开(公告)日：2009-08-27
申请号：JP2009135319
申请日：2009-06-04
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： RIKYU TOSHIHIRO , NAGAKURA KEISUKE
IPC分类号： B01D8/00
摘要： PROBLEM TO BE SOLVED: To provide a trap apparatus where the accumulation of solid matter at the part other than the vicinity of a gas inflow port is promoted, thus its using time is elongated, and also, the collection efficiency of the solid matter is improved.
SOLUTION: In a cylindrical vessel 22 having openings on both the edges, either opening is used as a gas inflow port 24, and the other opening is used as a gas outflow port 26. A flow passage of gas connected to an exhaust passage is formed between the gas inflow port and the gas outflow port in the inside of the vessel. This flow passage is composed of: a spirally elongating main flow passage; and an auxiliary flow passage branched from a part of the main flow passage and connected to the other part of the main flow passage. The main flow passage is formed by a thin sheet 30 connected to the surface of a cylindrical shaft body 28 in the inside of the vessel. The auxiliary flow passage is formed by an opening 32 formed at the prescribed position of the thin sheet.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种捕获装置，其中促进了除了气体流入口附近的部分处的固体物质的积聚，因此其使用时间延长，并且固体的收集效率事情有所改善。解决方案：在具有两个边缘上的开口的圆柱形容器22中，任何一个开口用作气体流入口24，另一个开口用作气体流出口26.气体的流动通道连接到排气口在容器内部的气体流入口和气体流出口之间形成通道。该流动通道由以下部件组成：螺旋状伸长的主流路; 以及从主流路的一部分分支并与主流路的另一部分连接的辅助流路。主流路由与容器内部的筒状轴体28的表面连接的薄板30形成。辅助流路由形成在薄片的规定位置的开口32形成。版权所有（C）2009，JPO＆INPIT

73. 发明专利

JP2009179881A Cleaning method of metal film manufacturing apparatus 审中-公开
标题翻译：金属膜制造设备的清洁方法
公开(公告)号：JP2009179881A
公开(公告)日：2009-08-13
申请号：JP2009067769
申请日：2009-03-19
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： SAKAMOTO HITOSHI
IPC分类号： C23C16/44 , H01L21/28 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a cleaning method of a metal film manufacturing apparatus, wherein a film formation speed is high, an inexpensive material can be used, a metal film in which any impurity does not remain can be formed, and the metal film stuck to an inner wall of a chamber and an introduction vessel can be removed.
SOLUTION: A precursor 30 is formed by raw material gas 5 and a copper-made injection sheet 9 in a chamber 1, and Cl is reduction-removed from the precursor 30 to form Cu active species and jetted on a substrate 12 to generate a Cu thin film 33. The injection sheet 9 is cooled during the cleaning, and Cl
2 gas is converted into plasma to remove Cu component stuck to the inner wall of the chamber 1. Therefore, the film formation speed is high, the inexpensive material can be used, the metal film in which any impurity does not remain can be formed, and the metal film stuck to an inner wall of a chamber and an introduction vessel can be removed.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种金属膜制造装置的清洗方法，其中成膜速度高，可以使用便宜的材料，可以形成不会留下任何杂质的金属膜，以及粘附到室的内壁的金属膜和导入容器可以被去除。解决方案：前体30由原料气体5和铜制注射片9形成在室1中，并且从前体30还原除去Cl以形成Cu活性物质并喷射到基板12上产生Cu薄膜33.在清洗过程中，注入片材9被冷却，将Cl 2气体转化为等离子体以除去粘附在室1内壁上的Cu成分。因此，膜形成速度高，可以使用廉价的材料，可以形成不残留任何杂质的金属膜，并且可以去除粘附到室的内壁和引入容器的金属膜。版权所有（C）2009，JPO＆INPIT

74. 发明专利

JP2009177161A Method for forming insulation film 审中-公开
标题翻译：形成绝缘膜的方法
公开(公告)号：JP2009177161A
公开(公告)日：2009-08-06
申请号：JP2008327944
申请日：2008-12-24
申请人： Canon Anelva Corp , Canon Inc , キヤノンアネルバ株式会社 , キヤノン株式会社
发明人： FUKUCHI YUSUKE , KITANO NAOTAKE
IPC分类号： H01L21/318 , C23C14/58 , H01L21/768 , H01L23/522 , H01L29/78
CPC分类号： H01L21/3145 , H01L21/31641 , H01L21/31645
摘要： PROBLEM TO BE SOLVED: To form an insulation film suitable for use as a high-dielectric-constant gate insulation film and including a high-dielectric-constant metal nitride silicate film.
SOLUTION: A method for forming insulation films includes: a first process for depositing a film 102 containing metal and silicon on a silicon substrate 101 using a sputtering method in an atmosphere that it is difficult for metal atoms and silicon atoms to have an oxidization reaction, a second process for forming a film 103 containing nitrogen, metal and silicon by nitriding the film 102 using nitrogen plasma, and a third process for forming a metal nitride silicate film 104 by oxidizing the film 103 using oxygen plasma. During a period from completion of the first process to start of the second process, the film 102 is retained in the atmosphere where oxidation reaction is hardly caused. In the third process, the surface layer portion of the silicon substrate 101 under the film 104 is oxidized to form a silicon dioxide film 105. The metal includes at least either one of hafnium and zirconium.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：形成适合用作高介电常数栅极绝缘膜并包括高介电常数的金属氮化物硅酸盐膜的绝缘膜。解决方案：用于形成绝缘膜的方法包括：在气氛中使用溅射法在硅衬底101上沉积含有金属和硅的膜102的第一工艺，其中金属原子和硅原子难以具有氧化反应，通过使用氮等离子体氮化膜102形成含有氮，金属和硅的膜103的第二工艺，以及通过使用氧等离子体氧化膜103来形成金属氮化物硅酸盐膜104的第三工艺。在从第一工序完成到第二工序开始的期间，膜102保留在不易引起氧化反应的气氛中。在第三工序中，将薄膜104下的硅衬底101的表层部分氧化，形成二氧化硅膜105.该金属包括铪和锆中的至少一种。版权所有（C）2009，JPO＆INPIT

75. 发明专利

JP2009174057A Device and method for producing metallic film 审中-公开
标题翻译：用于生产金属膜的装置和方法
公开(公告)号：JP2009174057A
公开(公告)日：2009-08-06
申请号：JP2009068350
申请日：2009-03-19
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： SAKAMOTO HITOSHI , MATSUDA RYUICHI , HACHIMAN NAOKI
IPC分类号： C23C16/14 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To generate a high-quality Cu thin film 16 with a high film deposition rate at a drastically reduced cost.
SOLUTION: A raw material gas is fed into a chamber 1 from a nozzle 12, an electromagnetic wave is made incident in the chamber 1 from a plasma antenna 9, and an etching reaction is generated on a copper plate member 7 with Cl
2 gas plasma 14 to generate a precursor (CuxCly) 15. The precursor (CuxCly) 15 to be conveyed to a substrate 3 which is controlled at a temperature lower than that of the copper plate member 7 is turned into solely Cu ions by a reducing reaction and sputtered onto the substrate 3. By this way, the Cu thin film 16 with a high deposition rate and high quality is generated on the surface of the substrate 3 at a considerably reduced cost.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：以显着降低的成本产生具有高成膜速率的高品质Cu薄膜16。解决方案：原料气体从喷嘴12进入腔室1，电磁波从等离子体天线9入射到腔室1中，并且在铜板构件7上产生蚀刻反应，其中Cl 气体等离子体14以产生前体（CuxCly）15.转移到被控制在低于铜板部件7的温度的基板3上的前体（CuxCly）15被转动通过还原反应将Cu离子单独地溅射到基板3上。以这种方式，以大大降低的成本在基板3的表面上产生具有高沉积速率和高质量的Cu薄膜16。版权所有（C）2009，JPO＆INPIT

76. 发明专利

JP2009174056A Apparatus and method for manufacturing metal nitride film, and metal nitride film 审中-公开
标题翻译：用于制造金属氮化物膜和金属氮化物膜的装置和方法
公开(公告)号：JP2009174056A
公开(公告)日：2009-08-06
申请号：JP2009068267
申请日：2009-03-19
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： OGURA KEN , OBA YOSHIYUKI , ZEN KIEI , SAKAMOTO HITOSHI
IPC分类号： C23C16/30 , H01L21/28 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a metal nitride film, and an apparatus and a method for manufacturing the metal nitride film. SOLUTION: In the metal nitride film manufacturing method, a precursor 17 consisting of tantalum chloride gas is generated by etching a tantalum-formed member 14 to be etched inside a chamber 1 in which a substrate 3 is loaded and stored on a supporting stand 2; the temperature of the substrate 3 is set to be lower than that of the etched member 14; the precursor 17 is adsorbed by the substrate 3; the precursor 17 adsorbed by chlorine gas plasma is reduced to deposit the tantalum component on the substrate 3; and during this operation, the tantalum component is nitrided by nitrogen gas plasma obtained by converting nitrogen gas into plasma; and a metal nitride film 18 is deposited on the substrate 3. The flow rate ratio of nitrogen gas/halogen gas is set to be >0 and ≤0.1 by controlling the supply of nitrogen gas, and the N/M ratio which is the atomic composition ratio of nitrogen atoms to metal atoms of the nitrogen metal film 18 is set to be >0 and ≤1. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种金属氮化物膜，以及用于制造金属氮化物膜的装置和方法。解决方案：在金属氮化物膜制造方法中，通过在其中将基板3装载并存储在支撑体上的室1内蚀刻形成钽的构件14而产生由氯化钽气体构成的前体17 站2 将基板3的温度设定为低于蚀刻部件14的温度; 前体17被衬底3吸附; 通过氯气等离子体吸附的前体17被还原以将钽成分沉积在基片3上; 在该操作中，通过将氮气转化为等离子体而得到的氮气等离子体使钽成分氮化; 并且在基板3上沉积金属氮化物膜18.氮气/卤素气体的流量比通过控制氮气的供给而设定为> 0且≤0.1，作为原子的N / M比氮原子与氮金属膜18的金属原子的组成比设定为> 0且≤1。版权所有（C）2009，JPO＆INPIT

77. 发明专利

JP2009164628A Method of manufacturing magnetoresistance effect element 有权
标题翻译：制造磁阻效应元件的方法
公开(公告)号：JP2009164628A
公开(公告)日：2009-07-23
申请号：JP2009091675
申请日：2009-04-06
申请人： Canon Anelva Corp , National Institute Of Advanced Industrial & Technology , キヤノンアネルバ株式会社 , 独立行政法人産業技術総合研究所
发明人： DAVID DJAYAPRAWIRA , TSUNEKAWA KOJI , NAGAI MOTOMASA , MAEHARA DAIKI , YAMAGATA SHINJI , WATANABE NAOKI , YUASA SHINJI
IPC分类号： H01L43/12 , H01F10/14 , H01F10/16 , H01F10/32 , H01F41/18 , H01L21/316 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a magnetoresistance effect element including a multilayer structure composed of a ferromagnetic layer and a barrier layer on the ferromagnetic layer, which provides a high MR ratio and higher mass productivity and practicality.
SOLUTION: The ferromagnetic layer of which at least the surface is in an amorphous state is formed, and then the barrier layer of a magnesium oxide having a single crystalline structure wherein (001) planes are aligned in parallel with the interface throughout layers is formed by sputtering, and furthermore annealing processing is performed.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种制造磁阻效应元件的方法，该磁阻效应元件包括在铁磁层上由铁磁层和阻挡层组成的多层结构，其提供高MR比和较高的批量生产率和实用性。形成至少表面处于非晶状态的铁磁层，然后形成具有单晶结构的氧化镁的阻挡层，其中（001）面在整个层中与界面平行排列通过溅射形成，进而进行退火处理。版权所有（C）2009，JPO＆INPIT

78. 发明专利

JP2009161862A Plasma treatment apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：JP2009161862A
公开(公告)日：2009-07-23
申请号：JP2009067265
申请日：2009-03-19
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： OGATA JUNJI , IRIE TAKAYUKI , NISHIMORI TOSHIHIKO , IIDA YASUHISA , SAKAMOTO HITOSHI , IKEDA NAOAKI
IPC分类号： C23C16/44 , C23C16/18 , C23C16/507 , C23C16/52 , H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a thin-film production apparatus in which the generation of particles is suppressed and further, a load of cleaning treatment is reduced. SOLUTION: In an apparatus for forming a thin-film 15 on a substrate 6 by supplying a gas 13 to the inside of a vacuum chamber 1 from a gas nozzle 14 and turning the gas 13 to plasma by feeding electric power to a high frequency antenna 7, an inner tube 20 made of quartz glass is provided so as to prevent sticking of the thin film components to the internal surface of the vacuum chamber 1 and further, the inner tube 20 is heated by a heater 21. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供抑制颗粒产生的薄膜制造装置，进一步降低了清洗处理的负担。解决方案：在用于在基板6上形成薄膜15的装置中，通过从气体喷嘴14向真空室1的内部供应气体13并将气体13通过馈送电力转换为等离子体高频天线7设置有由石英玻璃制成的内管20，以防止薄膜部件粘附到真空室1的内表面，此外，内管20被加热器21加热。
版权所有（C）2009，JPO＆INPIT

79. 发明专利

JP2009158975A Method of manufacturing magnetic medium and mram 审中-公开
标题翻译：制造磁性介质和MRAM的方法
公开(公告)号：JP2009158975A
公开(公告)日：2009-07-16
申请号：JP2009093534
申请日：2009-04-08
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： MIYOSHI AYUMI
IPC分类号： H01L43/12 , G11B5/39 , H01F41/18 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To manufacture a high quality magnetic medium in production of a magnetic medium.
SOLUTION: In a chamber 1 for magnetron sputtering provided with a magnetic field generation means 7 which rotates around the outer circumference of a substrate 8, the substrate 8, and a first and a second targets 21, 21 are arranged so that a central axis of the substrate 8, and central axes of the first and the second target 21, 21 cross. The chamber 1 is evacuated and gas is introduced into the chamber 1. Under the environment evacuated and introduced with the gas, while rotating the substrate 8 and rotating the magnetic field generation means 7 around the periphery of the substrate 8 together with the rotation of the substrate 8, a magnetic film and different material films are formed on the substrate 8 using a magnetron sputtering method.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：制造用于制造磁性介质的高品质磁性介质。解决方案：在用于磁控溅射的室1中，设置有围绕衬底8的外周旋转的磁场产生装置7，衬底8和第一和第二靶21,21被布置成使得基板8的中心轴线和第一和第二目标21,21的中心轴线交叉。将室1抽真空并将气体引入室1.在抽空并引入气体的环境下，同时旋转基板8并使磁场产生装置7围绕基板8的周边旋转，同时旋转基板8，使用磁控溅射法在基板8上形成磁性膜和不同的材料膜。版权所有（C）2009，JPO＆INPIT

80. 发明专利

JP2009158784A Formation method of insulation film 有权
标题翻译：绝缘膜形成方法
公开(公告)号：JP2009158784A
公开(公告)日：2009-07-16
申请号：JP2007336733
申请日：2007-12-27
申请人： Canon Anelva Corp , Canon Inc , キヤノンアネルバ株式会社 , キヤノン株式会社
发明人： FUKUCHI YUSUKE , KITAGAWA HIDEO , KITANO NAOTAKE
IPC分类号： H01L21/316 , C23C14/14
摘要： PROBLEM TO BE SOLVED: To form a high-permittivity insulation film suitable for use as a high-permittivity gate insulation film, and having improved controllability and productivity.
SOLUTION: A formation method of an insulation film has: a first process for oxidizing the surface layer section of a silicon substrate 101 as a silicon oxide film 102; a second process for forming a metal film 103 on the silicon oxide film 102 under a non-oxidizing atmosphere; a third process for diffusing a metal atom for composing the metal film 103 into the silicon oxide film 102 by exposing the metal film 103 to rare gas plasma under a non-oxidizing atmosphere; and a fourth process for forming a metal silicate film 104 by oxidizing the silicon oxide film 102 where the metal atom is diffused by radical oxidation. The rare gas plasma includes rare gases having an amount of atom closest to that of the metal atom for composing the metal film 103.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：形成适合用作高介电性栅极绝缘膜的高介电常数绝缘膜，并且具有改进的可控性和生产率。解决方案：绝缘膜的形成方法具有：将作为氧化硅膜102的硅衬底101的表层部分氧化的第一工序; 在非氧化性气氛下在氧化硅膜102上形成金属膜103的第二工序; 通过在非氧化气氛下将金属膜103暴露于稀有气体等离子体，将用于构成金属膜103的金属原子扩散到氧化硅膜102中的第三种方法; 以及通过氧化氧化硅膜102而形成金属硅酸盐膜104的第四种方法，其中金属原子通过自由基氧化而扩散。稀有气体等离子体包括具有与用于构成金属膜103的金属原子最接近的原子量的稀有气体。版权所有（C）2009，JPO＆INPIT

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