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61. 发明专利

JP2010243918A Method of forming resist pattern 有权
标题翻译：形成电阻图案的方法
公开(公告)号：JP2010243918A
公开(公告)日：2010-10-28
申请号：JP2009094297
申请日：2009-04-08
申请人： Sekisui Chem Co Ltd , 積水化学工業株式会社
发明人： UEHARA TAKESHI , AOYAMA TEPPEI
IPC分类号： G03F7/38 , G03F1/68 , G03F1/82 , H01L21/027
CPC分类号： G03F1/38 , G03F1/68
摘要： PROBLEM TO BE SOLVED: To increase wettability of the surface of a resist layer and improve the uniformity of development in forming a resist pattern in a device such as a photoresist.
SOLUTION: A photosensitive resist is applied to a substrate 91 to form a resist layer 93 (a resist application process). Subsequently the resist layer 93 is partially irradiated with light (an exposure process). Then, a process gas for lyophilization is brought into contact with the resist layer 93 by being expelled through a discharge space 23 at near atmospheric pressure (atmospheric pressure remote plasma lyophilization process). Subsequently, a liquid developer 5 is brought into contact with the resist layer 93 (a development process).
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提高抗蚀剂层的表面的润湿性，并且提高在诸如光致抗蚀剂的器件中形成抗蚀剂图案的显影的均匀性。解决方案：将光敏抗蚀剂施加到基板91以形成抗蚀剂层93（抗蚀剂施加工艺）。随后用光照射抗蚀剂层93（曝光处理）。然后，通过在接近大气压（大气压远程等离子体冻干处理）的排放空间23排出用于冻干的处理气体与抗蚀剂层93接触。随后，使液体显影剂5与抗蚀剂层93接触（显影处理）。版权所有（C）2011，JPO＆INPIT

62. 发明专利

JP2010232528A Single wafer cleaning apparatus 审中-公开
标题翻译：单面清洗装置
公开(公告)号：JP2010232528A
公开(公告)日：2010-10-14
申请号：JP2009080093
申请日：2009-03-27
申请人： Pre-Tech Co Ltd , 株式会社プレテック
发明人： SHIBA KAZUHIKO , NAITO YOSUKE
IPC分类号： H01L21/304 , G03F1/82 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a single wafer cleaning apparatus reducing an uncleaned contact part of a to-be-cleaned object with a supporting body while preventing warpage and breakage of the object and preventing a cleaning liquid from infiltrating to a lower surface side of the object by cleaning while maintaining the flatness of the object. SOLUTION: The single wafer cleaning apparatus has a sucking and floating table and a spin table. The sucking and floating table contains a plurality of spiral flow-forming part, having a cylindrical recessed part and a discharge port for discharging a gas along the inner wall surface of the cylindrical recessed part, on the top surface part thereof, and is arranged right under a to-be-cleaned object. The spin table is arranged in the periphery of the sucking and floating table, and has the supporting body which supports the side surface of the object right above the sucking and floating table to spin the object supported by the supporting body with a central axis. In the single wafer cleaning apparatus, while sucking and floating the object in a noncontact state, the side surface of the object is supported by the supporting body, and the object is spun with the central axis by the spin table, to clean the top surface. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种单一的晶片清洁装置，以减少待清洁物体的未清洁的接触部分与支撑体，同时防止物体的翘曲和破裂，并防止清洁液体渗透到较低的通过清洁而保持物体的平坦度。解决方案：单个晶片清洁设备具有吸盘和浮动台和旋转台。吸盘和浮动台包括多个螺旋流动形成部分，其具有圆柱形凹部和用于沿着圆柱形凹部的内壁表面排出气体的排出口，并且布置在右侧在被清理的对象下。旋转台布置在吸盘和浮床的周边，并且具有支撑体，其支撑物体的侧表面，正好位于吸盘和浮床的正上方，以支撑体支撑的物体以中心轴线旋转。在单晶片清洗装置中，在以非接触状态吸取物体的状态下，物体的侧面被支撑体支撑，并且通过旋转台使物体与中心轴旋转，以清洁顶面。版权所有（C）2011，JPO＆INPIT

63. 发明专利

JP2010186167A Cleaning method and cleaning device 审中-公开
标题翻译：清洁方法和清洁装置
公开(公告)号：JP2010186167A
公开(公告)日：2010-08-26
申请号：JP2010000094
申请日：2010-01-04
申请人： Lasertec Corp , レーザーテック株式会社
发明人： TAKEHANA YOICHI , KUSUSE HARUHIKO , TAKEHISA KIWAMU , KOIKE HIDEYUKI
IPC分类号： G03F1/62 , G03F1/82
摘要： PROBLEM TO BE SOLVED: To easily and reliably remove a pyrolytic contaminant without peeling a pellicle. SOLUTION: A cleaning device includes a carbon dioxide gas laser 12 that irradiates a pyrolytic contaminant depositing on a pattern face of a mask substrate 21 to which a pellicle 24 is attached, with a laser beam at a wavelength of 8 to 11 μm through the pellicle 24, so as to heat the mask substrate 21 by the laser beam projected and to remove the contaminant by pyrolysis. The carbon dioxide gas laser 12 emits a pulsed laser beam. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了容易且可靠地除去热解污染物而不剥落防护薄膜。解决方案：清洁装置包括二氧化碳气体激光器12，其用波长为8至11μm的激光束照射沉积在附着有防护膜24的掩模基板21的图案面上的热解污染物通过防护薄膜组件24，通过投影的激光束加热掩模基板21，并通过热解去除污染物。二氧化碳气体激光器12发射脉冲激光束。版权所有（C）2010，JPO＆INPIT

64. 发明专利

JP2010186069A Method for manufacturing photomask 有权
标题翻译：制造光电子的方法
公开(公告)号：JP2010186069A
公开(公告)日：2010-08-26
申请号：JP2009030365
申请日：2009-02-12
申请人： Hoya Corp , Hoya株式会社
发明人： OKUBO YASUSHI , SUZUKI HISAYUKI , HASHIMOTO MASAHIRO
IPC分类号： G03F1/68 , G03F1/82
CPC分类号： G03F1/48 , G03F1/32 , G03F1/54
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a photomask, by which light resistance of a light transluent film or a light-shielding film containing metal and silicon to exposure light at a wavelength of not longer than 200 nm is increased and the lifetime of a photomask is improved. SOLUTION: A thin film made of a material containing metal and silicon is formed on a light-transmitting substrate; then the thin film is patterned to form a thin film pattern; and the thin film is subjected to a treatment for premodifying the major surface and sidewalls of the thin film pattern so as to prevent transfer characteristics of the thin film pattern from exceedingly changing more than a prescribed degree of changes when the thin film pattern is cumulatively irradiated with exposure light at a wavelength of not longer than 200 nm. This treatment is carried out, for example, by heat treating the pattern at 450°C to 900°C in an atmosphere containing oxygen. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决问题的方案：提供一种制造光掩模的方法，通过该方法，将光入射膜或含有金属和硅的遮光膜的光暴露于不大于200nm的波长的曝光光并且光掩模的寿命得到改善。解决方案：在透光基板上形成由含有金属和硅的材料制成的薄膜; 然后将薄膜图案化以形成薄膜图案; 并且对薄膜进行预处理以对薄膜图案的主表面和侧壁进行预处理，以便当薄膜图案被累积照射时，防止薄膜图案的转印特性超过规定的变化量超出规定的变化量使用波长不大于200nm的曝光光。该处理例如通过在含有氧的气氛中在450℃〜900℃下热处理图案来进行。版权所有（C）2010，JPO＆INPIT

65. 发明专利

JP4505016B2 Mask cleaning method and mask cleaning equipment 有权
公开(公告)号：JP4505016B2
公开(公告)日：2010-07-14
申请号：JP2007508120
申请日：2006-03-13
申请人：株式会社ホロン
发明人：道夫大島 , 正志安宅 , 純新田 , 克幸高橋
IPC分类号： B08B7/00 , G03F1/82 , H01L21/027
CPC分类号： G03F1/82 , G03F7/70741

66. 发明专利

JP2010117412A Method for cleaning photomask-related substrate 审中-公开
标题翻译：清洗光电子相关衬底的方法
公开(公告)号：JP2010117412A
公开(公告)日：2010-05-27
申请号：JP2008288603
申请日：2008-11-11
申请人： Shin-Etsu Chemical Co Ltd , 信越化学工業株式会社
发明人： NUMANAMI TSUNEO
IPC分类号： B08B3/04 , B08B3/10 , G03F1/82 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a cleaning method extremely reducing the generation of microcontaminations (particles) when a photomask-related substrate selected from a substrate for a photomask, a photomask blank, a photomask and a production intermediate thereof is cleaned.
SOLUTION: The method for cleaning a photomask-related substrate includes a deaerating step of preliminarily subjecting pure water to be used for the cleaning to a deaeration to remove dissolved gas and to a heating step of heating the water, when a photomask-related substrate contaminated by a sulfate ion is cleaned with pure water, the photomask-related substrate being selected from a substrate for a photomask, a photomask blank, a photomask and a production intermediate thereof.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种清洁方法，其中，当从光掩模用基板，光掩模坯料，光掩模及其制造中间体中选择的光掩模相关基板被清洗时，极大地减少了微粒（微粒）的产生。解决方案：用于清洗光掩模相关衬底的方法包括：当光掩模相关衬底的光掩模相关衬底的清洗步骤是将用于清洁的纯水预先进行脱气以除去溶解气体的脱气步骤和加热水的加热步骤，用纯水清洗受硫酸根离子污染的相关底物，光掩模相关基材选自光掩模用基材，光掩模坯料，光掩模及其制备中间体。版权所有（C）2010，JPO＆INPIT

67. 发明专利

JP2009265176A Foreign matter removing method, foreign matter removing device, and method of manufacturing semiconductor device 审中-公开
标题翻译：外部移除方法，外部移除装置以及制造半导体装置的方法
公开(公告)号：JP2009265176A
公开(公告)日：2009-11-12
申请号：JP2008111664
申请日：2008-04-22
申请人： Toshiba Corp , 株式会社東芝
发明人： HIGAKI TOMOTAKA
IPC分类号： G03F1/72 , G03F1/74 , G03F1/82
摘要： PROBLEM TO BE SOLVED: To provide a foreign matter removing method of easily removing a foreign matter on a photomask without damaging the photomask. SOLUTION: The foreign matter removing method of removing the foreign matter sticking on the photomask includes a movement step of moving a nozzle 6 which discharges an energy-curing substance relatively to a position corresponding to a position of the foreign matter on the basis of position information on the foreign matter, a coating step of discharging the energy-curing substance to the foreign matter by the nozzle 6 to coat the foreign matter with the energy-curing substance, a curing step of curing the energy curing substance by imparting energy to the energy curing substance covering the foreign matter by an energy supply unit 3 which outputs prescribed energy, and a removal step of removing the cured energy-curing substance from the photomask 8. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种在不损害光掩模的情况下容易地除去光掩模上的异物的异物去除方法。解决方案：除去粘附在光掩模上的异物的异物去除方法包括移动步骤，移动喷嘴6，喷嘴6将能量固化物质相对于基于异物位置的位置排出关于异物的位置信息，通过喷嘴6将能量固化物质排出到异物以用能量固化物质涂覆异物的涂布步骤，通过赋予能量来固化能量固化物质的固化步骤涉及通过输出规定能量的能量供给单元3覆盖异物的能量固化物质，以及从光掩模8除去固化的能量固化物质的去除步骤。（C）2010，JPO＆INPIT

68. 发明专利

JP4318209B2 Production process of a manufacturing method and a photomask of a photomask blank 有权
公开(公告)号：JP4318209B2
公开(公告)日：2009-08-19
申请号：JP2004031786
申请日：2004-02-09
申请人： Hoya株式会社
发明人：良後藤 , 修花岡
IPC分类号： B08B3/08 , B08B3/12 , C03C15/00 , C03C23/00 , G03F1/50 , G03F1/82

69. 发明专利

JP2009123800A Substrate processing apparatus 有权
标题翻译：基板加工设备
公开(公告)号：JP2009123800A
公开(公告)日：2009-06-04
申请号：JP2007294072
申请日：2007-11-13
申请人： Sokudo:Kk , 株式会社Sokudo
发明人： NISHIYAMA KOJI , YOSHII HIROYUKI
IPC分类号： H01L21/304 , B08B1/02 , G03F1/82
CPC分类号： H01L21/67173 , H01L21/67046 , H01L21/67051 , H01L21/6715 , H01L21/67178 , H01L21/68728 , H01L21/68742 , Y10S134/902
摘要： PROBLEM TO BE SOLVED: To provide a substrate holding rotating apparatus capable of entirely cleaning the outer edge of a substrate, a substrate cleaning apparatus with the same and a substrate processing apparatus. SOLUTION: When a substrate W is subjected to bevel cleaning processing, a magnet plate 614a is arranged at a lower position, and a magnet plate 614b is arranged at an upper position. In this case, each of chuck pins 615 enters a closed state in a region R1 outside the magnet plate 614a, but it enters an opened state in a region R2 outside the magnet plate 614b. This means, a holder 615c in each of the chuck pins 615 is maintained in contact with an outer edge of the substrate W when it passes through the region R1 outside the magnet plate 614a, but it is spaced apart from the outer edge of the substrate W when it passes through the region R2 outside the magnet plate 614b. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够完全清洁基板的外边缘的基板保持旋转装置，具有该基板的外部边缘的基板清洁装置和基板处理装置。解决方案：当对衬底W进行斜面清洁处理时，磁体板614a布置在下部位置，并且磁体板614b布置在上部位置。在这种情况下，卡盘销615中的每一个在磁板614a外部的区域R1中进入关闭状态，但是在磁板614b外部的区域R2中进入打开状态。这意味着，每个卡盘销615中的保持器615c当其通过磁体板614a外部的区域R1时与基板W的外边缘保持接触，但是与基板的外边缘间隔开 W通过磁板614b外部的区域R2时。版权所有（C）2009，JPO＆INPIT

70. 发明专利

JP2009116267A Method and device for repairing photomask with pellicle 有权
标题翻译：用薄膜修复光电子的方法和装置
公开(公告)号：JP2009116267A
公开(公告)日：2009-05-28
申请号：JP2007292244
申请日：2007-11-09
申请人： Toppan Printing Co Ltd , 凸版印刷株式会社
发明人： KUROKI KYOKO , MATSUURA TAKAHIRO , TAKAGI NORIAKI , IDA ISATO
IPC分类号： G03F1/82 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a method and a device for repairing a photomask with a pellicle for removing a growing foreign matter present on the photomask with a pellicle without peeling the pellicle. SOLUTION: A gaseous mixture of activated gas and inert gas is supplied by a gas mixing machine 5 to the inner space and the outer space of a photomask 1 with a pellicle, which is housed in a chamber 2 to thereby allow a foreign matter on the photomask 1 with a pellicle to react and dissolve. Further, the photomask 1 with a pellicle and the activated gas are irradiated with light at a low wavelength by a light irradiation device 3 to enhance the reactivity of the foreign matter; and the foreign matter on the photomask 1 with a pellicle is removed by the gas flow of the gaseous mixture. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用防护薄膜组件修复光掩模的方法和装置，用于除去防护薄膜组件上存在于光掩模上的生长中的异物而不剥离防护薄膜。解决方案：活性气体和惰性气体的气体混合物由气体混合机5供应到光掩模1的内部空间和外部空间，防护薄膜组件容纳在室2中，从而允许外部在光掩模1上的物质与防护薄膜组合物反应并溶解。此外，通过光照射装置3对具有防护薄膜和活性气体的光掩模1照射低波长的光，以增强异物的反应性; 并且通过气体混合物的气流除去具有防护薄膜的光掩模1上的异物。版权所有（C）2009，JPO＆INPIT

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