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62. 发明专利

JP5073257B2 Single crystal manufacturing apparatus and method 有权
公开(公告)号：JP5073257B2
公开(公告)日：2012-11-14
申请号：JP2006262632
申请日：2006-09-27
申请人： Sumco Techxiv株式会社
发明人：伸松隈 , 哲広飯田
IPC分类号： C30B15/20
CPC分类号： C30B15/20 , C30B15/14 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1068 , Y10T117/1088

63. 发明专利

JP5059596B2 System for continuous growth in the single-crystal silicon 有权
公开(公告)号：JP5059596B2
公开(公告)日：2012-10-24
申请号：JP2007501001
申请日：2005-02-25
申请人：ソーライクス・インコーポレイテッド
发明人：デーヴィッド・エル・ベンダー
IPC分类号： C30B29/06 , C30B1/00 , C30B15/00 , C30B15/02 , C30B15/10 , C30B15/14 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B15/12 , C30B15/002 , C30B15/02 , C30B15/04 , C30B15/10 , C30B15/14 , C30B15/22 , C30B29/06 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1024 , Y10T117/1032 , Y10T117/1052 , Y10T117/1056 , Y10T117/1068 , Y10T117/1072 , Y10T117/108 , Y10T117/1088 , Y10T117/1092
摘要： An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an optional weir surrounding the crystal. The low aspect ratio crucible substantially eliminates convection currents and reduces oxygen content in a finished single crystal silicon ingot. A separate level controlled silicon pre-melting chamber provides a continuous source of molten silicon to the growth crucible advantageously eliminating the need for vertical travel and a crucible raising system during the crystal pulling process. A plurality of heaters beneath the crucible establish corresponding thermal zones across the melt. Thermal output of the heaters is individually controlled for providing an optimal thermal distribution across the melt and at the crystal/melt interface for improved crystal growth. Multiple crystal pulling chambers are provided for continuous processing and high throughput.

64. 发明专利

JP2010030853A Pulling apparatus of silicon single crystal 有权
标题翻译：硅胶单晶拉丝装置
公开(公告)号：JP2010030853A
公开(公告)日：2010-02-12
申请号：JP2008195999
申请日：2008-07-30
申请人： Sumco Techxiv株式会社 , Sumco Techxiv Corp
发明人： NARUSHIMA YASUTO , KAWAZOE SHINICHI , OGAWA FUKUO , KUBOTA TOSHIMICHI , FUKUDA TOMOHIRO
IPC分类号： C30B15/04
CPC分类号： C30B15/04 , Y10T117/10 , Y10T117/1004 , Y10T117/1024 , Y10T117/1032 , Y10T117/1056 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： PROBLEM TO BE SOLVED: To provide a pulling apparatus of a silicon single crystal where the sealing of a connecting means to connect a sample tube with a supply tube is enhanced and where the leakage of a sublimable dopant from the connecting means is prevented. SOLUTION: The pulling apparatus of the silicon single crystal comprises a pulling furnace 2, a sample chamber 20 to house the sublimable dopant 23, the sample tube 21 which can rise and fall between the interior of the sample chamber 20 and the interior of the pulling furnace, a rising and falling means 25 to rise and fall the sample tube 21, the supply tube 22 to supply the sublimable dopant 23 into a molten liquid and located in the pulling furnace and a joining means to join the sample tube 21 with the supply tube 22. The joining means comprises a projected part 211 projected from an end of the sample tube 21 and a recessed part 221 located at an end of the supply tube 22 and capable of being fitted to the projected part 211 and is constituted of a ball joint structure formed so that a contacting surface between the projected part 211 and the recessed part 221 is curved. A flow path is formed between the sample tube 21 and the supply tube 22. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种单晶硅的牵引装置，其中连接装置将样品管与供给管连接的密封被增强，并且其中来自连接装置的可升华掺杂剂的泄漏被阻止。解决方案：硅单晶的拉制装置包括拉制炉2，容纳升华掺杂剂23的样品室20，可以在样品室20的内部和内部之间上升和下落的样品管21 的上升和下降装置25使样品管21上升和下降，供给管22将可升华的掺杂剂23供应到熔融液体中并位于拉出炉中，并且连接装置将样品管21 连接装置包括从样品管21的一端突出的突出部211和位于供给管22的端部并能够嵌合到突出部211的凹部221，并构成形成为使得突出部211和凹部221之间的接触面弯曲的球接头结构。在样品管21和供给管22之间形成流路。（C）2010，JPO＆INPIT

65. 发明专利

JP2010501466A Crystal manufacturing 有权
公开(公告)号：JP2010501466A
公开(公告)日：2010-01-21
申请号：JP2009526143
申请日：2007-08-31
申请人：オクメティックオサケユフティオユルキネン
发明人：アンティラ，オリ , サアルニッコ，アリ , パロヘイモ，ヤリ
IPC分类号： C30B15/00 , C30B29/06
CPC分类号： C30B15/14 , C30B29/20 , Y10T117/10 , Y10T117/104 , Y10T117/1056 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要：【課題】チョクラルスキー型結晶成長の装置が示され、具体化されている。詳細には、適した絶縁部と流れ構成とを備える炉が、結晶製造のコスト効率を改善することが示される。
【解決手段】例えばホットゾーンを開放し、ホットゾーンを新しい結晶径に容易に適合させる手段を提供することによって、電力消費量を低減し、ホットゾーン部分の寿命を延ばし、生産性を改善することのできる示された新規なホットゾーン構造、ガス流、及び成長プロセスによって実現される。

66. 发明专利

JP4349493B2 Single crystal silicon pulling apparatus, pollution prevention methods and pollution prevention device of the silicon melt of the silicon melt 有权
公开(公告)号：JP4349493B2
公开(公告)日：2009-10-21
申请号：JP2005279979
申请日：2005-09-27
申请人： Sumco Techxiv株式会社
发明人：庫一下村 , 大輔海老 , 禎之鈴木 , 誠鴨川
IPC分类号： C30B29/06 , C30B15/00
CPC分类号： C30B15/00 , C30B15/14 , C30B29/06 , C30B35/00 , Y10T117/10 , Y10T117/1024 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088

67. 发明专利

JP4203647B2 Single crystal manufacturing apparatus, and a method of manufacturing the same 有权
公开(公告)号：JP4203647B2
公开(公告)日：2009-01-07
申请号：JP2003150713
申请日：2003-05-28
申请人：日立化成工業株式会社 , 株式会社日立製作所
发明人：茂樹平澤 , 正人池川 , 浩之石橋 , 章弘軍司
IPC分类号： C30B15/00 , C30B1/00 , C30B15/14 , C30B35/00
CPC分类号： C30B35/00 , C30B15/14 , Y10T117/10 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088

68. 发明专利

JPWO2005095680A1 半導体単結晶製造装置および黒鉛るつぼ有权
公开(公告)号：JPWO2005095680A1
公开(公告)日：2008-07-31
申请号：JP2006511810
申请日：2005-03-31
申请人： Sumco Techxiv株式会社 , Sumco Techxiv株式会社
发明人：飯田　哲広 , 哲広飯田 , 暁子野田 , 暁子野田 , 冨岡　純輔 , 純輔冨岡
IPC分类号： C30B29/06 , C30B15/14 , C30B15/22
CPC分类号： C30B15/14 , C30B29/06 , Y10T117/1068 , Y10T117/1072 , Y10T117/1076 , Y10T117/1088
摘要：半導体集積回路用ウェーハの材料となる高酸素濃度の単結晶から低酸素濃度の単結晶まで、所定の酸素濃度規格範囲で歩留まりよく製造できる半導体単結晶製造装置を提供する。るつぼ3を側周側から加熱するヒータ4a、4b、4cのそれぞれ隣接するヒータの間の円環状領域の全周に渡って熱遮蔽物20、21が設けられている。熱遮蔽物20、21により、前記ヒータの各加熱領域を局所化し、るつぼ3およびるつぼ内融液8の温度分布を能動的に制御することで、高酸素濃度の単結晶から低酸素濃度の単結晶まで、所定の酸素濃度規格範囲で歩留まりよく製造することができる。

69. 发明专利

JP2008081352A Apparatus and method for producing single crystal 有权
标题翻译：用于生产单晶的装置和方法
公开(公告)号：JP2008081352A
公开(公告)日：2008-04-10
申请号：JP2006262632
申请日：2006-09-27
申请人： Sumco Techxiv株式会社 , Sumco Techxiv Corp
发明人： IIDA AKIHIRO , MATSUKUMA SHIN
IPC分类号： C30B15/20
CPC分类号： C30B15/20 , C30B15/14 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1068 , Y10T117/1088
摘要： PROBLEM TO BE SOLVED: To improve controllability of a crystal diameter in a Czochralski apparatus for producing a single crystal using a plurality of stages of heaters. SOLUTION: Pulling speed is manipulated to control the diameter of the crystal. Electric power of the plurality of stages of heaters (16, 18) is manipulated to approximate the pulling speed to a predetermined set value of speed and also to approximate the heater temperature to a target value of temperature. Electric power ratio of the heaters (16, 18) is controlled so as to coincide to a predetermined set value of electric power ratio. The set value of electric power ratio varies in response to the length of pulled crystal, and the heater temperature varies accompanied with variation of the set value of electric power ratio, causing disturbance in the diameter control. To compensate the disturbance, a variation of heater temperature accompanied with variation of set value of electric power ratio is added beforehand to the set value of temperature to be the base of determining target value of temperature. Accordingly, the set value of temperature varies to a value best suited to the current set value of electric power ratio accompanied with variation of the set value of electric power ratio. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提高使用多级加热器生产单晶的切克劳斯斯基设备中的晶体直径的可控性。
解决方案：控制拉伸速度以控制晶体的直径。操纵多级加热器（16,18）的功率，以将牵引速度逼近预定的速度设定值，并将加热器温度近似为目标温度值。加热器（16,18）的功率比被控制为与预定的功率比设定值一致。电功率比的设定值随着拉晶的长度而变化，加热器温度随着电功率比的设定值的变化而变化，导致直径控制的干扰。为了补偿干扰，预先加上伴随电功率比的设定值的变化的加热器温度的变化，作为确定温度目标值的基础的温度设定值。因此，随着电力设定值的变化，温度的设定值变化为最适合于当前电力设定值的电力值的值。版权所有（C）2008，JPO＆INPIT

70. 发明专利

JP2007290961A Czochralski puller for manufacturing single crystal silicon ingot 审中-公开
标题翻译： CZOCHRALSKI PULLER制造单晶硅
公开(公告)号：JP2007290961A
公开(公告)日：2007-11-08
申请号：JP2007127353
申请日：2007-05-11
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： PARK JAE-GUN
IPC分类号： C30B15/20 , C30B29/06 , C30B15/00 , C30B15/14 , C30B33/00 , H01L21/20 , H01L21/26 , H01L21/322 , H01L21/324
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , C30B15/206 , C30B33/00 , H01L21/3225 , Y10S117/911 , Y10T117/1004 , Y10T117/1008 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088 , Y10T428/12458 , Y10T428/12528 , Y10T428/21
摘要： PROBLEM TO BE SOLVED: To provide a Czochralski puller for manufacturing a single crystal silicon ingot which can be quickly cooled and thus can be used for manufacturing a silicon wafer having controlled defective distribution. SOLUTION: The Czochralski puller 200 comprises a chamber sealing body 230, a crucible 206 which holds molten silicon 226, a seed holder 220a for holding a seed crystal 224, a heater 204 which encloses the crucible 206, and an annular heat blocking housing comprising a heat blocking housing lid 340 and a heat blocking housing bottom 320 connecting with internal and external heat blocking housing walls 310 and 330, wherein the heat housing lid 340 inclines upward and the heat blocking housing bottom 320 inclines downward and a support member 350 which supports the a heat blocking housing. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于制造可以快速冷却的单晶硅锭的切克劳斯提拉器，因此可用于制造具有受控缺陷分布的硅晶片。解决方案：切克劳斯提拉器200包括腔室密封体230，保持熔融硅226的坩埚206，用于保持晶种224的种子保持器220a，封闭坩埚206的加热器204和环形热阻塞壳体包括与内部和外部热阻外壳壁310和330连接的隔热壳体盖340和隔热壳体底部320，其中加热壳体盖340向上倾斜并且阻热壳体底部320向下倾斜，并且支撑构件350 其支撑隔热壳体。版权所有（C）2008，JPO＆INPIT

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