会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 65. 发明专利
    • IMAGE SENSOR
    • JPH0750741A
    • 1995-02-21
    • JP10742794
    • 1994-04-25
    • TOSHIBA CORP
    • SAITO TAMIONAKAI TOSHIOMORI KENICHISUZUKI KOHEISUDA YOSHIYUKITAKAYAMA AKIRA
    • H04N1/028
    • PURPOSE:To provide the high-speed reading image sensor by taking out a signal of a photoelectric conversion element which is amplified by an amplifier by a switching means and reducing the noise. CONSTITUTION:An amplifier Pn is interposed between a photoelectric conversion element An (n=1-N) and a switching means Bn. A reset switching means B'n is interposed between a photoelectric conversion element An and the amplifier Pn. Thus, the S/N is improved by performing amplification in the former step of the switching means Bn being the noise generation source. More amplifier may be provided at the final stage of a common output line. If such an amplifier Pn is provided, a means which returns the photoelectric conversion element An to the initial state temporarily is required after reading signals. This operation can return, for example, the earth potential after reading signals by the reset switching means B'n. The reset switching means B'n can be driven by using a shift register selecting the switching means Bn.
    • 67. 发明专利
    • THIN FILM TRANSISTOR
    • JPS62224976A
    • 1987-10-02
    • JP6921186
    • 1986-03-27
    • TOSHIBA CORP
    • TAKAYAMA AKIRASUDA YOSHIYUKISEKIGUCHI TADASHI
    • H01L27/12H01L29/78H01L29/786H01L29/80H01L29/812
    • PURPOSE:To obtain a vertical TFT which is made of amorphous semiconductor and is operated with a high speed and has a high ON/OFF ratio by a method wherein a gate electrode forms a Schottky junction with an amorphous semiconductor in the boundary in a channel part and forms an MIS junction with the amorphous semiconductor in the boundary in the part other than the channel part with an insulating film between. CONSTITUTION:A 1st main electrode 20 formed on an insulating substrate 10, amorphous semiconductor layers 30 and 70 formed on the electrode 20, 2nd main electrodes 90 selectively formed on them, gate electrodes 50 formed in the amorphous semiconductor layers 30 and 70 and insulating films 40 and 60 which are formed on the gate electrodes 50 on at least one of the 1st electrode 20 side and the 2nd electrode 90 side are provided. The gate electrode 50 forms Schottky junctions with the amorphous semiconductor 70 in the boundaries in channel parts in which carriers travel and, moreover, forms MIS junctions with the amorphous semiconductor layers 30 and 70 in the boundaries in the parts other than the channel parts. With this constitution, a leakage current into the gate electrode can be minimized so that a TFT with a high speed operation and a high ON/OFF ratio can be realized.
    • 68. 发明专利
    • MANUFACTURE OF IMAGE SENSOR
    • JPS61198667A
    • 1986-09-03
    • JP3805485
    • 1985-02-27
    • TOSHIBA CORP
    • TAKAYAMA AKIRA
    • H01L27/146H01L31/0216
    • PURPOSE:To omit the process of positioning discrete electrodes to a photo-shield film, by a method wherein the window of the photo-shield film is formed by patterning this film after development using discrete electrodes as the mask. CONSTITUTION:Discrete electrodes 2 made of a non-transparent metal such as Cr are formed on a clear substrate 1 such as a glass substrate. A band-like photoelectric conversion film 3 is formed so as to cover the whole of the discrete electrode 2; a common electrode 4 made of a clear conductive film over the film 3; and a thin insulation film 5 over the electrode 4; then, the film 5 is coated with a positive resist 6. By irradiation with ultraviolet rays from the substrate 1 side, the photo resist 6 is exposed by using the electrodes 2 as the mask and developed, thus leaving a pattern corresponding to the electrodes 2. Next, a non-transparent material film 7' serving as the photo-shield film is formed; finally, the remaining photo resist 6 is exfoliated, thus forming the photo-shield film 7 having a window 8 by life-off above the electrode 2, i.e. at the region of a photoelectric conversion element.
    • 69. 发明专利
    • WIRING MATERIAL AND MANUFACTURE OF THE SAME
    • JPS61145841A
    • 1986-07-03
    • JP26734184
    • 1984-12-20
    • TOSHIBA CORP
    • SUDO TOSHIOIIDA ATSUKOTAKAYAMA AKIRA
    • H05K3/00H01L21/768H01L23/522H05K3/06
    • PURPOSE:To reduce wiring capacity of wirings of an integrated circuit element which is required to assure a high speed logic operations and the wirings on a substrate for mounting said element by forming the same pattern as the wiring conductor pattern on the insulator between a wiring conductor pattern and a common conductor. CONSTITUTION:A polyimide and Teflon having a low dielectric coefficient is formed uniformly on a common conductor 1. After a conductor is uniformly adhered thereon by vaporization or sputtering, the wiring conductor is patterned by photo etching, etc. With this conductor pattern 2 used as the mask, the insulator 3 is etched. In this case, even when a Teflon is used, the portion (b) can easily by removed leaving the portion (a) just under the wiring conductor within the insulator layer 3 by employing a means such as the plasma etching, etc. Since the insulator supporting the wiring conductor is restricted only to the part where the wiring conductor is formed and the other portion can be replaced with air, the effective wiring capacity can be reduced. Moreover the crosstalk by electrostatic coupling between the adjacent wirings which will become a problem in the high density wiring can be reduced.