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    • 65. 发明专利
    • WAVEGUIDE TYPE OPTICAL MODULATOR
    • JPH10133158A
    • 1998-05-22
    • JP29010196
    • 1996-10-31
    • SUMITOMO OSAKA CEMENT CO LTD
    • SUGAMATA TORUMIYAMA YASUYUKIJINRIKI TAKASHI
    • G02F1/035
    • PROBLEM TO BE SOLVED: To widen an optical modulation band, to obtain impedance matching and to enable driving with a lower voltage by forming optical waveguides and a buffer layer on a substrate having an electro-optic effect and disposing grounding electric field adjustment regions and grounding electric field auxiliary adjustment regions adjacent to these regions between grounding electrodes and the buffer layer. SOLUTION: After patterned Ti is deposited by evaporation on the LiNbO3 substrate 5, the Ti is thermally diffused to form the waveguides 4a, 4b. The SiO2 buffer layer 3 is formed by a sputtering method. The entire surface of a wafer is spin coated in this state with a photoresist and the grounding electric field adjustment regions are exposed on the waveguides by using a photomask and NiCr is deposited by evaporation to form the grounding electric field adjustment regions 2a. In succession, the grounding electric field auxiliary adjustment regions are exposed in contact with the ground electric field adjustment regions 2a by using a photomask and Ti is deposited by evaporation to form the grounding electric field auxiliary adjustment regions 2b. The photoreceptor is thereafter applied with the photoresist over the entire surface of the substrate and signal electrodes 1 and the grounding electrodes 2 are patterned.
    • 70. 发明专利
    • WAVEGUIDE TYPE OPTICAL MODULATOR
    • JPH1048583A
    • 1998-02-20
    • JP20813096
    • 1996-08-07
    • SUMITOMO OSAKA CEMENT CO LTD
    • SUGAMATA TORUMIYAMA YASUYUKIJINRIKI TAKASHI
    • G02F1/035
    • PROBLEM TO BE SOLVED: To provide an optical modulator having a wide modulation band, capable of performing impedance matching and driving with a lower voltage by providing electric conductivity having the width of a signal electric field adjusting area larger than the width of a signal electrode and the electric field adjusting area different in the direction of width. SOLUTION: A whole surface of a wafer is coated by spinning. The central part of a signal electric field area 1a is exposed on a waveguide 4a by using a photomask, after forming NiCr film by vacuum deposition, lifted off and the central part of the area 1a is formed. Similarly, after exposing the peripheral part of the area 1a on the waveguide 4a, a Ti film is formed by sputtering, lifted off and the peripheral part of the area 1a is formed. Since the conductivity of NiCr in the central part of the area 1a is higher than that of Ti fitted on the outer side, As to the distribution of the signal electric field, the density of electric field is high in the central part of the electrode and week in the end part. Consequently, interaction between the signal electric field and waveguide light just under the signal electrode and having a Gauss distribution is stregthened and an optical modulator with a lower driving voltage is obtained.