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    • 61. 发明专利
    • DIAPHRAGM AND PUMP DEVICE THEREWITH
    • JP2002130135A
    • 2002-05-09
    • JP2000327131
    • 2000-10-26
    • MATSUSHITA ELECTRIC IND CO LTD
    • IMADA KATSUMITAKEDA KATSUOKANO YUKOMORITOKI KATSUNORI
    • F04B43/02F04B43/04
    • PROBLEM TO BE SOLVED: To provide a diaphragm type pump device enhancing the rigidity of the area of a diaphragm where stress concentration is likely to occur near a fixed outer peripheral portion, and capable of assuring the required delivery speed even if fluid of relatively high viscosity is handled, with the diaphragm comprising a piezoelectric element affixed to an elastic sheet-shaped base material. SOLUTION: In the pump device 1, the diaphragm 10 comprising the sheet- shaped piezoelectric element 13 affixed to a portion of the sheet-shaped elastic base material 11 is fixed at its outer periphery to the wall part of a case 2 provided with a suction port 5 and a delivery port 7, whereby a pump chamber Rp is formed by the diaphragm and the case. By applying a drive signal to the piezoelectric element, the diaphragm is elastically deflected and displaced using the fixed outer peripheral portion as a fulcrum and the capacity of the pump chamber is varied to provide pumping action. A reinforcing portion 12 is provided in a peripheral edge area of a predetermined width as measured from the outer periphery of the diaphragm.
    • 68. 发明专利
    • SOLID-STATE LIGHT EMITTING DEVICE
    • JPH07335938A
    • 1995-12-22
    • JP12842894
    • 1994-06-10
    • MATSUSHITA ELECTRIC IND CO LTD
    • MORITOKI KATSUNORI
    • H01L33/08H01L33/24H01L33/30H01L33/40H01L33/00
    • PURPOSE:To radiate an electromagnetic wave efficiently by a method wherein the depth of the junction plane between a compound semiconductor layer and an impurity diffused layer is locally reduced at one or more positions. CONSTITUTION:One or more regions (LSP) 18 in which the depth of a p-n junction reduced are provided locally in an impurity diffused layer 13. The surface resistance value is locally high in those regions 18. However, low resistance regions are spread around the LSP's 18. The resistance value between the surface of the low resistance region and the LSP 18 junction is approximately the same as the value between the surface of the low resistance region and the other junction. Therefore, even in the LSP 18, a potential difference applied to the impurity diffused region 13 which is a light emitting part is not declined and a light emission efficiency is not declined locally. On the other hand, as the junction depth is small and, further, an impurity concentration is low in a depth direction, the external light emission efficiency is improved and a solid- state light emitting device whose light emission intensity is high as a whole is obtained.