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51. 发明专利

JP2008545880A Low-temperature molten salt electrolysis of quartz 审中-公开
公开(公告)号：JP2008545880A
公开(公告)日：2008-12-18
申请号：JP2008510586
申请日：2006-05-12
申请人：ヴルフネーゲル
发明人：ヴルフネーゲル
IPC分类号： C25B1/00 , C01B33/023 , C25C3/34
CPC分类号： C25B1/006
摘要：【解決手段】以下の工程ａ）ＳｉＯ
２含有出発物質をアンチモン、水銀および硫黄と共に溶融塩電解し、分解物質を得る工程；
ｂ）洗浄して元素状の硫黄を取り除く工程；
ｃ）酸処理して外来イオンを除去する工程；
ｄ）還元処理して、水銀および／またはアンチモン塩を還元する工程；
ｅ）密度分離して、シリコンを残りの成分から分離する工程を含む、シリコンの製造方法。

52. 发明专利

JP2008024526A Method for forming silicon 审中-公开
标题翻译：形成硅的方法
公开(公告)号：JP2008024526A
公开(公告)日：2008-02-07
申请号：JP2006195466
申请日：2006-07-18
申请人： Toyota Central Res & Dev Lab Inc , 株式会社豊田中央研究所
发明人： ITO TADASHI , AZUMA HIROZUMI
IPC分类号： C01B33/023 , C01B33/027 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a method for forming silicon by which an environmental load can be sufficiently reduced without requiring the use of combustible gas and toxic gas, and the silicon can efficiently be formed with a sufficiently reduced energy without applying high heat.
SOLUTION: In the method for forming the silicon, a silicon-containing material containing silicon of 30 to 99.9 atomic% and a reducing metallic element of 0.1 to 50 atomic% is irradiated with laser light having a wavelength of 192 to 1,064 nm, a pulse width of 100 nanoseconds to 10 femtoseconds and an irradiation intensity of 10
8 to 10
15 W/cm
2 in a vacuum atmosphere under the oxygen partial pressure of ≤10
-2 Pa, so as to obtain silicon.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种形成硅的方法，通过该方法可以充分降低环境负荷，而不需要使用可燃气体和有毒气体，并且可以以足够的能量高效地形成硅而不施加高热。解决方案：在形成硅的方法中，将具有30至99.9原子％的含硅的含硅材料和0.1至50原子％的还原性金属元素照射到波长为192至1,064nm的激光，在真空气氛中的脉冲宽度为100纳秒至10飞秒，照射强度为10 8 <10 / SP> 15 W / cm 2 SP 氧分压≤10 -2 Pa，以获得硅。版权所有（C）2008，JPO＆INPIT

53. 发明专利

JP2002193612A METHOD OF PRODUCING METALLIC SILICON 失效
公开(公告)号：JP2002193612A
公开(公告)日：2002-07-10
申请号：JP2000394640
申请日：2000-12-26
申请人： KYC KK
发明人： FUJIMURA YOSHITO
IPC分类号： C01B33/023 , C01B33/037
摘要： PROBLEM TO BE SOLVED: To provide a method of producing a metallic silicon in a high yield at a low cost. SOLUTION: The method of producing the metallic silicon comprises melting a silicon dioxide-containing glass and a metal aluminum by heating them to a temperature of 1450 deg.C or higher, and thus reducing silicon dioxide so as to generate the metallic silicon. A hot cullet wasted in production process of glass products as glass and a used aluminum can be used.

54. 发明专利

JPS6332725B2 失效
公开(公告)号：JPS6332725B2
公开(公告)日：1988-07-01
申请号：JP8464980
申请日：1980-06-24
申请人： ONODA SEMENTO KK , ONODA KAGAKU KOGYO KK
发明人： KATO HAJIME , SASAKI SHINICHI , SATO KOICHI
IPC分类号： C01B33/02 , C01B33/021 , C01B33/023

55. 发明专利

JPS62260711A MANUFACTURE OF SILICON BY CARBON HEAT REDUCTION OF SILICATE DIOXIDE 失效
公开(公告)号：JPS62260711A
公开(公告)日：1987-11-13
申请号：JP10348187
申请日：1987-04-28
申请人： DOW CORNING
发明人： BISHIYU DATSUTO DOSAJI , ARUBIN UIRIAMU ROUKUHORUTSU , MAACHIN DEBITSUDO YANGU
IPC分类号： C01B33/02 , C01B33/023 , C01B33/025

56. 发明专利

JPS6126491B2 JPS6126491B2 - 失效
公开(公告)号：JPS6126491B2
公开(公告)日：1986-06-20
申请号：JP183983
申请日：1983-01-11
申请人： Heriotoroniku Fuorushunkusu Unto Entoitsukurungusu G Fuyua Zorarutsueren Guruntoshutotsufue Mbh
发明人： YOOZEFU DEIITORU , KURAUSU HORUMU , IERUKU KOTEIRUGE , MIHIAERU UOORUSHUREEGAA
IPC分类号： C01B33/02 , C01B33/023
CPC分类号： C01B33/023

57. 发明专利

JPS616112A MANUFACTURE OF METALLIC SILICON 失效
公开(公告)号：JPS616112A
公开(公告)日：1986-01-11
申请号：JP12508984
申请日：1984-06-20
申请人： KAWASAKI STEEL CO
发明人： ARAYA MATAO , FUKUTAKE TAKESHI
IPC分类号： C01B33/02 , C01B33/023
摘要： PURPOSE:To obtain high purity metallic Si free from Fe and Al by blowing gaseous hydrocarbon into a fluidized bed of SiO2 powder at a high temp. and heating a formed SiO2-SiC mixture to a higher temp. to form metallic Si by a reaction and melting. CONSTITUTION:A gas such as Ar or H2 is introduced into the fluidized bed body 1 provided with a built-in heater 4 from a lower gas blowing hole 9, and SiO2 powder and gaseous hydrocarbon are blown from blowing pipes 8, 3 to form a fluidized bed. At the same time, they are brought into a reaction at >=1,300 deg.C. A formed SiO2-SiC mixture is collected and recovered from a product outlet 7. The mixture is put in a plasma melting furnace or the like provided with a water-cooled crucible 11, and it is heated to a higher temp. to form metallic Si 14 by a reaction and melting. At this time, a regulating agent such as SiC, solid carbon powder or SiO2 powder are added to the mixture as required. By this method, high purity metallic Si can be manufactured easily.

58. 发明专利

JPS5869713A MANUFACTURE OF SILICON FROM SILICA-CONTAINING POWDER MATERIAL 失效
公开(公告)号：JPS5869713A
公开(公告)日：1983-04-26
申请号：JP13527882
申请日：1982-08-04
申请人： ESU KEE EFU STTEL ENG AB
发明人： SUBEN SANTEN , JIYON OROFU EDOSUTORIIMU
IPC分类号： C01B33/02 , C01B33/023 , C01B33/025 , C23C16/24 , H01L21/205

59. 发明专利

JPS5771813A Production of silicon from sodium silicofluoride 失效
标题翻译：从硅酸钠生产硅
公开(公告)号：JPS5771813A
公开(公告)日：1982-05-04
申请号：JP14690880
申请日：1980-10-22
申请人： Onoda Cement Co Ltd
发明人： KATOU HAJIME , SASAKI SHINICHI
IPC分类号： C01B33/02 , C01B33/023
摘要： PURPOSE: After reaction of sodium silicofluoride with metallic sodium is conducted to separate silicon, sodium fluoride is converted into sodium silicofluoride and circulated to produce high-purity silicon.
CONSTITUTION: The reaction between sodium silicofluoride and metallic sodium forms a mixture of silicon and sodium fluoride and the mixture is melted by heating in an intert gas. Then, the mixture is cooled down to room temperature to separate silicon from the solidified product. To remaining sodium fluoride, are added silicon oxide of higher than 90% purity and a mineral acid solution and they are heated to effect the reaction. Sodium silicofluoride formed is filtered, washed with water, dried, then used to react with metallic sodium. Thus, the production costs of silicon is greatly reduced.
COPYRIGHT: (C)1982,JPO&Japio
摘要翻译：目的：将硅氟化钠与金属钠反应分离硅后，将氟化钠转化为氟硅烷，循环生成高纯硅。构成：氟硅酸钠与金属钠的反应形成硅和氟化钠的混合物，混合物通过加热在间歇气体中熔化。然后将混合物冷却至室温以从固化产物中分离出硅。向剩余的氟化钠中加入纯度高于90％的氧化硅和无机酸溶液，并加热其进行反应。形成的氟硅烷过滤，用水洗涤，干燥，然后与金属钠反应。因此，硅的生产成本大大降低。

60. 发明专利

JPS5262135A ELECTROPLATING COMPOSITION AND ELECTRODEPOSITION PROCESS USING SAME 失效
公开(公告)号：JPS5262135A
公开(公告)日：1977-05-23
申请号：JP12602276
申请日：1976-10-20
申请人： BATTELLE DEVELOPMENT CORP
发明人： ARUFURETSUDO ERUSU OOSUCHIN
IPC分类号： C25D9/08 , C01B33/02 , C01B33/023 , C25D3/54 , F24J2/48
摘要： Elemental silicon of utility as a corrosion resistant coating, as an absorber in a solar thermal conversion system, etc. is provided by nonaqueous electrolytic deposition thereof on a cathode body through electrolytic reduction of a silicon halide or haloid silane compound as a solute in a liquid aprotic dipolar organic solvent for the compound by passing therethrough an electrolyzing current, generally at near ambient temperature and near atmospheric pressure yet under cover of an inert gas, and desirably by pulse electrolysis. The electroplating composition consists essentially of a nonaqueous solvent solution of the anhydrous liquid aprotic dipolar organic solvent, for example propylene carbonate, dimethylformamide, etc., containing the silicon solute, such as illustrated by silicon tetrachloride and trichlorosilane, in an amount providing, or providing by inclusion therewith of a dissociable electrolyte (e.g. tetrabutylammonium perchlorate), an electrical conductivity, generally greater than one m Mho, requisite to reduce the silicon solute.

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