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51. 发明专利

JPH0555706A SEMICONDUCTOR LASER 失效
公开(公告)号：JPH0555706A
公开(公告)日：1993-03-05
申请号：JP21393791
申请日：1991-08-26
申请人： SONY CORP
发明人： HIRATA SHOJI , NARUI HIRONOBU
IPC分类号： H01L29/201 , H01L21/338 , H01L29/778 , H01L29/812 , H01S5/00
摘要： PURPOSE:To definitely provide a lower threshold current by avoiding an increase in leak current under the state where a current block layer is open in a SDH type semiconductor laser. CONSTITUTION:On a substrate 1 having {100} crystal face as main face, a ridge 2 extended in the crystal axis direction is formed on the substrate; and at least a buffer layer 4, the first conductive clad layer 5, an activated layer 6, the second conductive clad layer 7 and a current block layer 9 are grown and formed on the ridge by the vapor phase growth method in such a manner that a slope 8 consisting of {111} B face crystal extended from both the edges of the ridge 2 appears. And the layers 1 and 5 adjacent to the buffer layer 4 have the same kind of carriers as the conductive type of the buffer layer 4.

52. 发明专利

JPH0555692A SEMICONDUCTOR LASER 失效
公开(公告)号：JPH0555692A
公开(公告)日：1993-03-05
申请号：JP21551891
申请日：1991-08-27
申请人： SONY CORP
发明人： HIRATA SHOJI , NARUI HIRONOBU
IPC分类号： H01S5/00
摘要： PURPOSE:To surely maintain thyristor constitutions on both sides of a ridge, and reduce leak current, by forming semiconductor layers having carrier of the conductivity type different from that of a substrate, or insulative semiconductor layers, on both side surfaces of the ridge and in the bottoms of the trenches on both sides. CONSTITUTION:Both side surfaces 2S of a ridge 2 and the insides of trenches 3 on both sides are constituted so as to be surrounded by a semiconductor layer 4 having carrier of the conductivity type different from that of the substrate 1, or an insulative semiconductor layer. Thereby a leak current can be surely avoided when the leak current penetrating from a clad layer 5 of a first conductivity type on the ridge 2 to a current blocking layer 9 is generated, and a thyristor composed of a first conductivity type clad layer 6, a second conductivity type clad layer 7, a current blocking layer and a second clad layer 10 of a second conductivity type is turned on, because a P-N-P-N thyristor composed of the substrate 1, the semiconductor layer 4, the clad layer 6 of a first conductivity type and the clad layer 7 of a second conductivity type is constituted.

53. 发明专利

JPH04326788A DISTRIBUTION FEEDBACK TYPE SEMICONDUCTOR LASER 失效
公开(公告)号：JPH04326788A
公开(公告)日：1992-11-16
申请号：JP9773591
申请日：1991-04-26
申请人： SONY CORP
发明人： DOI MASATO , HIRATA SHOJI
IPC分类号： H01S5/00 , H01S5/12
摘要： PURPOSE:To enable the stable single longitudinal mode oscillation of only the objective wavelength light by providing a light absorbing layer, where the quantum effect changes cyclically in the direction of light wave guide. CONSTITUTION:A first clad layer 2 consisting of AlGaAs or the like, an active layer 4 consisting of GaAs or the like, and a guide layer 5 consisting of AlGaAs or the like are epitaxially grown on a substrate 1 consisting of GaAs or the like. A diffraction gratings 10 at required pitches, which consist of parallel- arranged grooves where the sectional form in the direction of light wave guide is saw-toothed, is made on the guide layer 5 by etching. A light absorbing layer 6 consisting of AlGaAs or the like and the second clad layer 7 consisting of AlGaAs or the like are grown epitaxially in order thereon to have such thickness as to bring about quantum effect, that is, quantum well structure. A diffraction grating 10 is provided in the vicinity of the active layer 4, and hereon a light absorbing layer 6 is provided, which performs light absorption in cycles by quantum effect. Hereby, periodical gain coupling is performed, and single longitudinal mode oscillation becomes possible.

54. 发明专利

JPH04206982A SEMICONDUCTOR LASER 失效
公开(公告)号：JPH04206982A
公开(公告)日：1992-07-28
申请号：JP33835490
申请日：1990-11-30
申请人： SONY CORP
发明人： HIRATA SHOJI , NARUI HIRONOBU
IPC分类号： H01S5/00 , H01S5/227
摘要： PURPOSE:To improve reliability and to enhance an output by microscopically altering the thickness of an active layer by suitably setting an interval between the side of a mesa protrusion and the side opposed thereto, and introducing a window structure in an SDH type semiconductor laser. CONSTITUTION:In an SDH type semiconductor laser in which a threshold value current is reduced, the thickness of a compound semiconductor layer is controlled in a spontaneous generation manner by using a migration effect in the case of an epitaxial growth to suitably set an interval between the side 2S of a mesa protrusion 2 and the side 3S opposed thereto, and thus the thickness of an active layer 5 is microscopically altered at the center 2A and the end 2B of the protrusion 2. Accordingly, a band gap Eg of an active layer 5 of a quantum well structure of about 100Angstrom or less is increased near the extending direction light emitting unit 2B of the protrusion 2 and decreased near the center 2A to form a so-called window structure in which a light oscillated in the center 2A is scarcely optically absorbed at the end, thereby reducing deterioration of the end, improving reliability and enhancing its output.

55. 发明专利

JPH04111378A SEMICONDUCTOR LASER 失效
公开(公告)号：JPH04111378A
公开(公告)日：1992-04-13
申请号：JP22915290
申请日：1990-08-30
申请人： SONY CORP
发明人： HIRATA SHOJI
IPC分类号： H01S5/00
摘要： PURPOSE:To expand an oscillation wavelength to the side of a short wavelength by a method wherein an AlGaAs window formation layer whose energy band gap is higher than that of an active layer is arranged so as to come into contact with both edges in the light extraction direction of the active layer. CONSTITUTION:A lower-layer clad layer 32A, a lower-layer guide layer 22A, an active layer 21, an upper-layer guide layer 22B, a clad layer 32B and a cap layer 33 are grown sequentially on an n-type GaAs substrate 31 by a continuous epitaxial operation by an MOCVD method. After that, both ends of the active layer 21 are etched and removed; recessed parts 34 are formed. An AlGaAs layer 35 whose Al content has been selected so as to make an energy band gap large as compared with that of GaInP or AlGaInP in the active layer 21 is epitaxially grown so as to fill the recessed parts 34 by an MOCVD method, an MBE method, an LPE method or the like. In addition, uneven parts of the layer 35 are filled with a filling material 36 such as a resist or the like; the whole surface is flattened and etched back. A flat etching operation is executed down to the position indicated by a medium dotted line (a) from the surface; this assembly is polished until the cap layer 33 is revealed on the surface. After that, flat edges 41 and 42 are formed by a cleavage operation by means of a cleanage face so as to traverse the individual epitaxial layers 32A and 22A formed on the substrate 31 including the AlGaAs layer 35; a window structure part 23 by the AlGaAs formation layer 35 is formed.

56. 发明专利

JPH04111376A MANUFACTURE OF SEMICONDUCTOR LASER 失效
公开(公告)号：JPH04111376A
公开(公告)日：1992-04-13
申请号：JP22914690
申请日：1990-08-30
申请人： SONY CORP
发明人： NARUI HIRONOBU , HIRATA SHOJI
IPC分类号： H01S5/00 , H01S5/16
摘要： PURPOSE:To simplify a manufacturing method and to enhance reliability and characteristics by a method wherein, after a first epitaxial process is executed to the main face of a semiconductor substrate on which a stripe-shaped mesa protrusion is formed, a (011) crystal plane is generated on both edges of the stripe-shaped mesa protrusion and a window part is constituted. CONSTITUTION:When an epitaxial growth operation is executed at a comparatively high temperature, e.g. T=750 to 800 deg.C, inside a dividing groove 22 of a mesa protrusion 2, a crystal is hard to grow on an edge 2A composed of a (011) crystal plane. The growth operation at individual layers progresses along the bottom face 22A composed of a (100) crystal plane of the dividing groove 22. As a result, the individual layers can be formed in a divided manner alternately on the stripe-shaped mesa protrusion 2 and inside the dividing groove 22. When, e.g. a third clad layer 10 of a second conductivity type is epitaxially grown on such an epitaxial growth layer at a comparatively low temperature, e.g. T= about 650 to 700 deg.C, by an MOCVD method or the like, an epitaxial growth operation is started on edges 8A and 2A, and the (011) crystal plane is easy to produce. As a result, edges of an active layer 4 on the stripe-shaped mesa protrusion 2 are filled with the third clad layer 10 of the second conductivity type, and a window part 40 is formed.

57. 发明专利

JPH03238887A SEMICONDUCTOR LASER 失效
公开(公告)号：JPH03238887A
公开(公告)日：1991-10-24
申请号：JP3473190
申请日：1990-02-15
申请人： SONY CORP
发明人： NARUI HIRONOBU , HIRATA SHOJI , MORI YOSHIFUMI
IPC分类号： H01S5/00 , H01S5/026
摘要： PURPOSE:To facilitate wiring for connection with another element, and others, in formation of OEIC(optoelectronic IC) and thereby to enable application of the title laser to OEIC and the like and diversification thereof by leading out both of P and N electrodes onto the same surface side. CONSTITUTION:Both of N-side and P-side electrodes are led out of the surface side, i.e. the same surface side, being in contact with N-type and P type clad layers 3 and 5 holding each active layer 4 in a stripe-shaped epitaxial growth layer 20 on a mesa projection 2 therebetween and with an N-type clad layer 6 or the P-type clad layer 5 or an impurity introduction region 11 interposed, respectively. Even in the case when a monolithic type IC or a hybrid-type IC having a semiconductor laser and other circuit elements provided on a common semiconductor base is constructed, for instance, wiring for connection of this semiconductor laser with the other circuit elements is facilitated and, consequently, design for OEIC is facilitated.

58. 发明专利

JPS63252493A DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER 失效
公开(公告)号：JPS63252493A
公开(公告)日：1988-10-19
申请号：JP8756087
申请日：1987-04-09
申请人： SONY CORP
发明人： HIRATA SHOJI
IPC分类号： H01S5/00 , H01S5/12
摘要： PURPOSE:To realize lambda/4 phase shift without changing an optical guide mechanism by forming a rib-shaped diffraction grating having a discontinuous section along the direction of an optical guide, reducing the thickness of guide layers on both sides of the discontinuous section and shaping stepped sections. CONSTITUTION:A clad layer 2, an active layer 3 and a guide layer 4 are epitaxial-grown onto the main surface of a semiconductor substrate 1 in succession, and a diffraction grating 5 having width W1 and uniform pitches along the direction of an optical guide is shaped on the surface of the guide layer 4. A flat discontinuous section, a phase shift region 12, is formed at the center of the diffraction grating 5 and flat surfaces on both sides of the region 12. Flat sections 14b shaping stepped sections of half the height D of the diffraction grating 5 are formed on both sides of the phase shift region 12. A clad layer 6 and a cap layer 7 are shaped onto the whole surface of such a guide layer 4, and electrodes 9, 10 are formed onto both surfaces.

59. 发明专利

JPS63178575A DISTRIBUTED FEEDBACK TYPE SEMICONDUCTOR LASER 失效
公开(公告)号：JPS63178575A
公开(公告)日：1988-07-22
申请号：JP1037287
申请日：1987-01-20
申请人： SONY CORP
发明人： HIRATA SHOJI
IPC分类号： H01S5/00 , H01S5/12
摘要： PURPOSE:To grow a crystal of good quality for improving an element life by making an optical guidewave part of a guide layer a flat region and forming gratings on both sides of the flat region. CONSTITUTION:For instance, a clad layer 2 consisting of an n-Al0.35Ga0.65As, an active layer 3 consisting of AlGaAs and a guide layer 4 consisting of p-Al0.15 Ga0.85As are epitaxially grown on the main surface of an n-GaAs substrate 1. Next, gratings 5A and 5B, which are wavelike and whose ridgelines are arranged in parallel in one direction on both side guide layer surfaces of the region 4 while leaving a flat region 4A at the center of the surface of the guide layer 4 that is on the center directly above an active layer luminous part. A clad layer 6 consisting of p-Al0.35Ga0.65As and a cap layer 7 consisting of p-GaAs are epitaxially grown on the whole surface of the guide layer 4 having the gratings 5A and 5B and further a current limitation region 8 is selectively formed. In thus way, a crystal of good quality is grown with improved life.

60. 发明专利

JPS63136588A DISTRIBUTED FEEDBACK TYPE SEMICONDUCTOR LASER 失效
公开(公告)号：JPS63136588A
公开(公告)日：1988-06-08
申请号：JP28267986
申请日：1986-11-27
申请人： SONY CORP
发明人： HIRATA SHOJI
IPC分类号： H01S5/00 , H01S5/12 , H01S5/20
摘要： PURPOSE:To obtain a proper refractive index waveguide effect and sufficient coupling, and to realize the improvement of yield and the reduction of threshold currents by providing two distributed feedback means positioned at different distances from an active layer in the stripe width direction of a current injection region. CONSTITUTION:A refractive index guide function is generated by index difference generated by the difference of each effective thickness so that the distributed index of the distributed feedback means 5B is displayed typically by a curve 31 in a grating, the distributed feedback means 5A, with width W1 and gratings, the distributed feedback means 5B, with width W2 on both sides of the means 5A. Coupling with the evanishing region of an optical guide mode is conducted by the gratings for the distributed feedback means 5B on both sides, and coupling insufficient only by the width W1 of the means 5A is increased, at the center thus acquiring the enough quantity of coupling.

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