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51. 发明专利

JPH05160130A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH05160130A
公开(公告)日：1993-06-25
申请号：JP32428291
申请日：1991-12-09
申请人： MITSUBISHI ELECTRIC CORP
发明人： KIMURA HIROSHI
IPC分类号： H01L21/3213 , H01L21/3205 , H01L23/52
摘要： PURPOSE:To prevent disconnection and short-circuiting failure due to electromigration of a metal wiring in a semiconductor device and at the same time enable resistance against heat treatment in a post process and moisture resistance of the completed semiconductor device to be improved. CONSTITUTION:A barrier metal 3, an Al wiring 1, and a lamination film 4 are formed in sequence on a lower-layer layer insulation film 2 and then a conductive metal layer 11 (line width: 1mum or less) is formed on it by lithography, which is subjected to anisotropic etching by a reactivity ion etching. Then, the conductive metal layer 11 is deposited on it, which is subjected to etching by the reactive ion etching until a lamination film 4 appears.

52. 发明专利

JPH04179026A MANUFACTURE OF SHADOW MASK 失效
公开(公告)号：JPH04179026A
公开(公告)日：1992-06-25
申请号：JP30533190
申请日：1990-11-08
申请人： MITSUBISHI ELECTRIC CORP
发明人： KIMURA HIROSHI , KOITABASHI MASAYASU , WATANABE TETSUYA , YAMAMOTO MORIO
IPC分类号： C23C24/00 , H01J9/14
摘要： PURPOSE:To eliminate a process by which a compound consisting of bismuth, a Group IV element and oxygen is synthesized by a method wherein water glass or/further a Group IV element therewith are added to ultra-atomized bismuth oxide powder mixture and a solution of those substances is applied to the electron beam impact side of a shadow mask and after air-drying of the solution, baking process is applied thereto. CONSTITUTION:Water glass or further a compound consisting of Group IV element therewith are added to ultra-atomized bismuth oxide, powder and a mixture solution those substances is applied to the electron beam impact side of a shadow mask, and after air-drying of the solution, the paint film of the solution is baked. In the baking process, therefore, the bismuth oxide powder reacts directly on SiO2 in the component of water glass so that bismuth silicon oxide(BSO), etc., are produced. The process to synthesize a compound of heavy metal (Bi) like BSO, etc., a Group IV element and oxygen becomes, therefore, unnecessary, and also after the baking process of a shadow mask, a stable thermal deformation suppression film having a composition of mixture with a compound of Bi2O3 and BSO, etc., can be manufactured.

53. 发明专利

JPH0364068A SEMICONDUCTOR MEMORY AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0364068A
公开(公告)日：1991-03-19
申请号：JP20062889
申请日：1989-08-02
申请人： MITSUBISHI ELECTRIC CORP
发明人： TANAKA YOSHINORI , WAKAMIYA WATARU , OZAKI KOJI , KIMURA HIROSHI , SATO SHINICHI
IPC分类号： H01L27/10 , H01L21/8242 , H01L27/108
摘要： PURPOSE:To increase the surface area of a storage node and to obtain a large capacitance with a small occupying area by so forming the node of a charge storage unit as to have a sidewall part extending substantially vertically to the main surface of a semiconductor substrate. CONSTITUTION:A storage node 11 is formed along the inner surface of a storage node opening 11a opened at an interlayer insulating film 10 formed above a bit line 8. A cell plate 13 is formed through a capacitor dielectric film 12 on the node 11. The node 11 is so formed on the part of a storage node contact 15 as to bring into electric contact with an impurity region through a laid pad 9. Since the node 11 can be so formed as to extend substantially in both vertical and horizontal directions to the main surface of a semiconductor substrate, the surface area of the node can further be increased.

54. 发明专利

JPH02281557A MANUFACTURE OF ELECTRODE FOR NONAQUEOUS ELECTROLYTE BATTERY 失效
公开(公告)号：JPH02281557A
公开(公告)日：1990-11-19
申请号：JP10222989
申请日：1989-04-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： SHIODA HISASHI , KIMURA HIROSHI , HANABUSA KIYOSHI , URUSHIBATA HIROAKI
IPC分类号： H01M4/08 , H01M4/139
摘要： PURPOSE:To decrease the moisture in an electrode to a specified value or lower to enhance quality by washing the electrode molded with tetrahydrofuran or a solution mainly comprising tetrahydrofuran. CONSTITUTION:An electrode is molded, then immersed in tetrahydrofuran(THF) or a solution mainly comprising THF at room temperature for about 24 hours. The moisture in the electrode is sufficiently removed, self discharge of the electrode is retarded, and quality is enhanced. If the solution mainly comprising THF is cooled to 4 deg.C or less so as to produce THF.17H2O, the moisture can be removed in a shorter time.

55. 发明专利

JPH02275665A SEMICONDUCTOR MEMORY AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH02275665A
公开(公告)日：1990-11-09
申请号：JP27541189
申请日：1989-10-23
申请人： MITSUBISHI ELECTRIC CORP
发明人： TANAKA YOSHINORI , SATO SHINICHI , WAKAMIYA WATARU , OZAKI KOJI , KIMURA HIROSHI
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108
摘要： PURPOSE:To obtain a semiconductor memory having a capacitor of large capacity and adapted for miniaturization by simultaneously providing an opening of a cell plate with an opening for directly connecting to a bit line. CONSTITUTION:An opening 15 from the other regions of impurity regions 6a, 7a to a signal input/output conductive layer 70 is formed at a second insulating film 17, and a second electrode layer of a signal holding passive element 80 is extended to the side face of the opening 15 of the film 17. Here, a cell plate 10 and an interlayer insulating film 17 for holding the plate 10 are simultaneously opened with openings 15. Thus, a forming margin between the plate 10 and a bit line 12 is not required, and hence the plate 10 can be extended to the vicinity of the line 12. Thus, the capacity of a capacitor can be increased, and a memory cell can be miniaturized.

56. 发明专利

JPH02171594A HEAT STORAGE DEVICE 失效
公开(公告)号：JPH02171594A
公开(公告)日：1990-07-03
申请号：JP32526488
申请日：1988-12-23
申请人： MITSUBISHI ELECTRIC CORP
发明人： KIMURA HIROSHI
IPC分类号： F24J3/00 , F28D20/00 , F28D20/02
摘要： PURPOSE:To keep a heat storage material in a supercooled condition over long period and arbitrarily control solidification start temperature by moving in accordance with the change of temperature to provide a movement member having a pressure contact part pressure-contacted with other member in the heat storage material. CONSTITUTION:When a shaped memory alloy spring 4 is Nitinol alloy whose transformation start temperature Ms is -5 deg.C and reverse transformation start temperature As is +15 deg.C, is in an extended state at 15 deg.C and is at -5 deg.C or lower, it becomes in a shrunk state. For example, in the case where said production mechanism is put in a heat storage material of CaCl2.H2O and melted at melting point 30 deg.C or higher, the shape memory alloy spring 4 is in an expanded state, but, when the heat storage material is cooled at -5 deg.C or lower as it is kept supercooled, the shape memory alloy spring 4 is in a shrunk state, a pressure contact part 6 comes in contact in a supercooled liquid so that force is applied thereto, as the result nuclear production of solid crystal occurs in the neighborhood thereof to break supercooling of the heat storage material and solidification starts. Solidification start temperature can be precisely set in the range of + or -2 deg.C of a working temperature by using shape memory alloy.

57. 发明专利

JPH02168666A COMPLEMENTARY SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH02168666A
公开(公告)日：1990-06-28
申请号：JP16760789
申请日：1989-06-29
申请人： MITSUBISHI ELECTRIC CORP
发明人： SAKAEMORI TAKAHISA , WAKAMIYA WATARU , OZAKI KOJI , TANAKA YOSHINORI , SATO SHINICHI , KIMURA HIROSHI
IPC分类号： H01L21/761 , H01L21/76 , H01L27/08 , H01L27/092 , H01L29/78
摘要： PURPOSE:To enable wells in a finely constructed LSI to be isolated from each other reliably by providing a conduction controlling means utilizing electric field effect so that there is no conduction between a P-type region and a P-type diffused layer in an N-type region adjacent thereto or between the N-type region and an N-type diffused layer in the P-type region. CONSTITUTION:A complementary semiconductor device comprises a P-type well element 101 formed on the principal surface of a P-type well layer 3 and an N-type well element 102 formed on the principal surface of an N-type well layer 2. The P-type well layer 3 and the N-type well layer 2 are formed adjacent to each other on the principal surface of a P-type silicon substrate. The P-type well element 101 comprises an N-type diffused region 8 formed on the principal surface of the P-type well layer 3, an N-type diffused region 71 formed on the principal surface of the junction between the P-type well layer 3 and the N-type well layer 2 and a shield electrode 52 formed on the principal surface of the region between the N-type diffused regions 71 and 8 through a gate oxide film 4. Since the shield electrode 52 is held at a substrate bias voltage VBB or grounding voltage VSS, a storing layer is provided under the shield electrode 52. In this manner, the wells can be isolated from each other reliably even in an LSI having fine construction.

58. 发明专利

JPH0215532A MANUFACTURE OF COLOR BRAUN TUBE 失效
公开(公告)号：JPH0215532A
公开(公告)日：1990-01-19
申请号：JP16644188
申请日：1988-07-04
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMAMOTO MORIO , HATTORI MUTSUMI , WATANABE TETSUYA , TAKEOKA KUNIO , KOITABASHI MASAYASU , KIMURA HIROSHI , ONO KATSUHIRO
IPC分类号： H01J9/14 , H01J29/07
摘要： PURPOSE:To enable to obtain a paint film of little out gas on a shadow mask in good repeatability by using the mixture of sodium water glass and potassium water glass of a specific compounding ratio as a binder. CONSTITUTION:The mixture of sodium water glass and potassium water glass in its compounding ratio of 3:1 to 30:1 is mixed into powder of heavy metal oxide, heavy metal or mixture of both, and the mixed liquid is applied on the surface of a shadow mask 3 for baking. The carbonate forming quantity is minimized as well as the quantity fluctuated by the season is decreased by such water glass. The entire carbonate gas generated by thermal and electron beam irradiation is decreased so as to enable to obtain the dry paint film always in good repeatability as well as stably.

59. 发明专利

JPH01203490A COOLANT 失效
公开(公告)号：JPH01203490A
公开(公告)日：1989-08-16
申请号：JP2808188
申请日：1988-02-09
申请人： MITSUBISHI ELECTRIC CORP
发明人： KIMURA HIROSHI
IPC分类号： C09K5/00 , C09K5/06 , C09K5/08 , C09K5/16
摘要： PURPOSE:To provide a coolant containing an ammonium salt, a salt-resistant hydrated gel and water, having long cooling period, high viscosity and excellent practicality and useful for the cooling of human, animal, material, etc. CONSTITUTION:The objective coolant contains (A) preferably >=10wt.% of an ammonium salt preferably produced by mixing NH4NO3 with NH4Cl at a mixing ratio of 1-3, (B) preferably 4-20wt.% of a salt-resistant hydrated gel such as polyacrylic acid gel and (C) water to dissolve the component A. About half of the component B may be substituted with an inexpensive CMC in place of increasing the viscosity exclusively with the component B and the method is preferable for the cost-reduction.

60. 发明专利

JPH01157036A COLOR CATHODE-RAY TUBE 失效
公开(公告)号：JPH01157036A
公开(公告)日：1989-06-20
申请号：JP31443987
申请日：1987-12-11
申请人： MITSUBISHI ELECTRIC CORP
发明人： HATTORI MUTSUMI , WATANABE TETSUYA , YAMAMOTO MORIO , KOITABASHI MASAYASU , KIMURA HIROSHI , HIRATA IKUYUKI , ONO KATSUHIRO
IPC分类号： H01J29/07
摘要： PURPOSE:To restrain the temperature-rise strain of a shadow mask and improve image quality by providing a heat radiation layer having a radiation rate higher than an electron beam reflection layer on this electron beam reflection layer formed on the surface of the shadow mask. CONSTITUTION:A thin heat radiation layer 9 is formed on the surface of the electron beam reflection layer a of a shadow mask 5, using a material having a high radiation rate such as black lead and graphite. Most of remaining electron beams reflected on the electron beam reflection layer 8 are converted into heat energy in this layer 8, but the heat radiation layer 9 causes the divergence of heat energy at a high radiation rate, thereby restraining the temperature rise of the shadow mask 5.

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