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51. 发明专利

JP2010030889A Production method for lithium ion-conductive sulfide glass, production method for lithium ion-conductive sulfide glass ceramic, and mechanical milling apparatus for sulfide glass production 有权
标题翻译：用于引入锂离子玻璃的生产方法，用于锂离子导电玻璃陶瓷的生产方法和用于硫化玻璃生产的机械研磨装置
公开(公告)号：JP2010030889A
公开(公告)日：2010-02-12
申请号：JP2009157267
申请日：2009-07-01
申请人： Idemitsu Kosan Co Ltd , 出光興産株式会社
发明人： CHIGA MINORU , AIDA MASAO , MATSUZAKI SHIGEO , OTA TAKESHI
IPC分类号： C03B8/00 , C01B17/22 , C03B32/02 , C03C10/02 , H01B1/06 , H01B13/00 , H01M10/0562
CPC分类号： Y02E60/12
摘要： PROBLEM TO BE SOLVED: To provide a production method for a Li ion-conductive sulfide glass capable of producing a Li ion-conductive sulfide glass ceramic having a high ionic conductivity within a short time, to provide a production method for the Li ion-conductive sulfide glass ceramic, and to provide a mechanical milling apparatus for the sulfide glass production method desirable as a production method for a Li ion-conductive sulfide glass.
SOLUTION: A Li ion-conductive sulfide glass production method which is a method for producing a Li ion-conductive sulfide glass containing Li, P, and S and comprises vitrifying a raw material by mechanical milling at 60-160°C is provided. Also, a Li ion-conductive glass ceramic production method comprising heating the Li ion-conductive sulfide glass produced by the above Li ion-conductive sulfide glass production method to 200-360°C is provided. A mechanical milling apparatus for sulfide glass production comprising a grinding container, balls, and a temperature regulation means which regulates the temperature in the grinding container to 60-160°C is provided.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决问题的方法为了提供能够在短时间内制备离子电导率高的Li离子传导性硫化物玻璃陶瓷的Li离子传导性硫化玻璃的制造方法，为Li 离子导电硫化物玻璃陶瓷，并且提供用作用于锂离子传导性硫化物玻璃的制造方法所需的硫化物玻璃制造方法的机械研磨装置。解决方案：作为含有Li，P和S的Li离子传导性硫化物玻璃的制造方法的锂离子传导性硫化物玻璃制造方法，其包括通过在60〜160℃下机械研磨使原料玻璃化的方法是提供。此外，提供了将通过上述Li离子传导性硫化物玻璃制造方法制造的Li离子传导性硫化物玻璃加热至200〜360℃的Li离子传导性玻璃陶瓷制造方法。提供一种用于硫化玻璃生产的机械研磨装置，包括研磨容器，球和将研磨容器中的温度调节至60-160℃的温度调节装置。版权所有（C）2010，JPO＆INPIT

52. 发明专利

JP2009266575A Manufacturing method of sulfide-based electrolyte, and ball mill 审中-公开
标题翻译：基于硫化物电解质和球磨机的制造方法
公开(公告)号：JP2009266575A
公开(公告)日：2009-11-12
申请号：JP2008114202
申请日：2008-04-24
申请人： Idemitsu Kosan Co Ltd , 出光興産株式会社
发明人： CHIGA MINORU , AIDA MASAO , MATSUZAKI SHIGEO , OTA TAKESHI
IPC分类号： H01B13/00 , H01M10/0562
CPC分类号： Y02E60/12
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method that is industrially large scale, and capable of manufacturing a sulfide-based electrolyte with a high yield by preventing contamination; and to provide a ball mill using it.
SOLUTION: This ball mill 1 is provided with: an injection valve 162 openably/closably attached to a pot 16; a solvent injection tube 31 for injecting a solvent into the pot 16 through the injection valve 162; balls 160 for crushing and mixing a sulfur compound and the solvent in the pot 16 to form slurry; a discharge valve 171 openably/closably attached to the pot 16; and a slurry discharge tube for discharging the slurry from the inside of the pot 16 through the discharge valve 171.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供工业上大规模的制造方法，并且能够通过防止污染而以高产率制造硫化物基电解质; 并提供使用它的球磨机。解决方案：该球磨机1设置有：可打开/可闭合地连接到锅16的喷射阀162; 用于通过喷射阀162将溶剂注入罐16的溶剂注入管31; 用于粉碎和混合硫化合物和罐16中的溶剂的球160以形成浆料; 可开启/可闭合地连接到锅16的排出阀171; 以及用于通过排出阀171将浆料从罐16的内部排出的浆料排出管。版权所有（C）2010，JPO＆INPIT

53. 发明专利

JP2007070715A Sputtering target 审中-公开
标题翻译：飞溅目标
公开(公告)号：JP2007070715A
公开(公告)日：2007-03-22
申请号：JP2005262309
申请日：2005-09-09
申请人： Idemitsu Kosan Co Ltd , 出光興産株式会社
发明人： TOMAI SHIGEKAZU , INOUE KAZUYOSHI , MATSUZAKI SHIGEO
IPC分类号： C23C14/34 , C04B35/00
摘要： PROBLEM TO BE SOLVED: To provide a sputtering target capable of suppressing occurrence of arcing and degradation of the quality of a thin film during the sputtering without additionally providing any new power supply equipment. SOLUTION: The sputtering target is used for a dual cathode sputtering apparatus, and has a chamfered portion in a side end of a face opposing a substrate to be sputtered when mounted on the sputtering apparatus. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种溅射靶，其能够抑制溅射期间的发生和薄膜质量下降，而不需要额外提供任何新的电源设备。解决方案：溅射靶用于双阴极溅射装置，并且当安装在溅射装置上时，在与溅射基板相对的面的侧端具有倒角部分。版权所有（C）2007，JPO＆INPIT

54. 发明专利

JP2006196616A OXIDE TRANSPARENT CONDUCTIVE FILM MATERIAL, Al TRANSPARENT CONDUCTIVE LAMINATED CIRCUIT BOARD EQUIPPED WITH Al INTERCONNECT LINE, AND ITS MANUFACTURING METHOD 审中-公开
标题翻译：氧化物透明导电材料，配有铝互连线的透明导电层压电路板及其制造方法
公开(公告)号：JP2006196616A
公开(公告)日：2006-07-27
申请号：JP2005005569
申请日：2005-01-12
申请人： Idemitsu Kosan Co Ltd , 出光興産株式会社
发明人： MATSUZAKI SHIGEO , MATSUBARA MASAHITO , INOUE KAZUYOSHI , TANAKA NOBUO , YANO KIMINORI
IPC分类号： H01L21/768 , G02F1/1343 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To simplify a method of manufacturing a laminated circuit board equipped with Al interconnect lines by forming a transparent conductive film out of a transparent conductive material containing specific metal. SOLUTION: An amorphous oxide transparent conductive film material is an oxide whose main component is zinc oxide-tin oxide and in which its electromotive force is -0.6 V or below on the basis of an Ag/AgCl standard electrode in a 2.4% water solution of tetramethyl ammonium hydroxide (TMAH) at 30°C. When the transparent conductive film is formed on a transparent board equipped with Al interconnect lines using the above material, the Al interconnect lines are hardly eluted in a developing process carried out by the use of TMAH even when barrier metal etc are not used. Furthermore, the contact resistance of the Al interconnect line to the transparent conductive film can be made small. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：为了简化通过由含有特定金属的透明导电材料形成透明导电膜而制造具有Al互连线的层叠电路板的方法。解决方案：非晶氧化物透明导电膜材料是主要成分为氧化锌 - 氧化锡，其电动势为基于Ag / AgCl标准电极为-0.6V或更低的2.4％的氧化物，四甲基氢氧化铵（TMAH）在30℃下的水溶液。当透明导电膜形成在使用上述材料的配有Al互连线的透明板上时，即使不使用阻挡金属等，在通过使用TMAH进行的显影处理中几乎不会洗脱Al互连线。此外，可以使Al互连线与透明导电膜的接触电阻变小。版权所有（C）2006，JPO＆NCIPI

55. 发明专利

JP2006049043A Forming method of transparent conductive film, and transparent electric conductive substrate including transparent conductive film formed by that forming process 审中-公开
标题翻译：透明导电膜的形成方法和透明导电基板，其中包括形成工艺形成的透明导电薄膜
公开(公告)号：JP2006049043A
公开(公告)日：2006-02-16
申请号：JP2004227148
申请日：2004-08-03
申请人： Idemitsu Kosan Co Ltd , 出光興産株式会社
发明人： INOUE KAZUYOSHI , MATSUZAKI SHIGEO , KATANO JUNICHI
IPC分类号： H01B13/00 , C23C14/08 , G02F1/1343 , G02F1/1345 , H01B5/14 , H01L51/50 , H05B33/14 , H05B33/28
摘要： PROBLEM TO BE SOLVED: To provide a forming method of a transparent conductive film in which surface reforming is possible without experiencing a complicated process as for the transparent conductive film after film-forming, and in which a waste solution after surface reforming treatment can be treated by a simple method, and furthermore, to provide a method to form the transparent conductive film in which, for a long period, high adhesive strength and low contact resistance can be maintained between the transparent conductive film and an anisotropic conductive film adhesive, and which is superior in durability.
SOLUTION: The forming method of the transparent conductive film removes the surface layer of the transparent conductive film that is paced on a transparent base material and contains a zinc oxide, by using an oxidizing aqueous solution. The transparent conductive base material includes the transparent conductive film formed by the forming method. By carrying out the surface reforming treatment of the transparent conductive film by using the oxidizing aqueous solution, the transparent conducive film which has a homogeneous chemical composition as a whole, and of which the surface is roughened can be obtained.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种透明导电膜的形成方法，其中可以在不经历成膜后的透明导电膜的复杂工艺的情况下进行表面改性，并且其中表面改性处理后的废溶液可以通过简单的方法进行处理，此外，提供一种形成透明导电膜的方法，其中长时间可以在透明导电膜和各向异性导电膜粘合剂之间保持高粘合强度和低接触电阻，耐久性优异。解决方案：透明导电膜的形成方法通过使用氧化性水溶液去除在透明基材上铺展并含有氧化锌的透明导电膜的表面层。透明导电性基材包括通过形成方法形成的透明导电膜。通过使用氧化性水溶液进行透明导电膜的表面改性处理，可以得到整体上具有均匀的化学组成，其表面粗糙化的透明导电膜。版权所有（C）2006，JPO＆NCIPI

56. 发明专利

JP2003298209A Method for forming metal wiring and metal wiring board manufactured by the same 审中-公开
标题翻译：形成金属接线的方法和由其制造的金属接线板
公开(公告)号：JP2003298209A
公开(公告)日：2003-10-17
申请号：JP2002097808
申请日：2002-03-29
申请人： Idemitsu Kosan Co Ltd , 出光興産株式会社
发明人： MATSUZAKI SHIGEO , HOSHINO KATSUYOSHI
IPC分类号： H05K1/09 , H01L21/288 , H05K3/12
摘要： PROBLEM TO BE SOLVED: To provide a method for forming metal wiring, by which a high- definition wiring pattern and electrode pattern can be formed, and to provide a metal wiring board manufactured by the same.
SOLUTION: In this method for forming metal wiring, in the state that a metal micelle dispersing liquid 10 dispersing metal micelle 16 consisting of fine metal particles 12 and micellar agent 14 is brought into contact with a photocatalyst layer 26 arranged on the surface of a base body 22 of a substrate 20, the photocatalyst layer 26 is irradiated with light to laminate fine metal particles 12 on the substrate 20 and form metal wiring. A conductive substrate obtained by this method can be applied for a plasma display electrode glass substrate or a metal wiring substrate such as a metal electrode wiring substrate.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种用于形成金属布线的方法，通过该方法可以形成高清晰度布线图案和电极图案，并提供由其制造的金属布线板。解决方案：在用于形成金属布线的方法中，将分散金属微粒16的金属胶束分散液10和微胶粒剂14与配置在表面上的光催化剂层26接触的状态在基板20的基体22上照射光催化剂层26，将基板20上的金属微粒12层合，形成金属配线。通过该方法获得的导电性基板可以用于等离子体显示电极玻璃基板或诸如金属电极布线基板的金属布线基板。版权所有（C）2004，JPO

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