专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明专利

JPS59132166A Direct light igniting type semiconductor controlled rectifying device 失效
标题翻译：直接点火型半导体控制整流装置
公开(公告)号：JPS59132166A
公开(公告)日：1984-07-30
申请号：JP532783
申请日：1983-01-18
申请人： Hitachi Ltd
发明人： OTAI KOUGO , AKABANE KATSUMI , SAKAGAMI TADASHI , KONISHI NOBUTAKE
IPC分类号： H01L21/52 , H01L29/74 , H01L31/111
CPC分类号： H01L31/1113
摘要： PURPOSE:To prevent the short circuit between a gate and cathode when an intermediate buffer plate is compressed to a pellet, by providing a recess at a part facing an auxiliary thyristor part of the intermediate buffer plate. CONSTITUTION:A direct light igniting type auxiliary thyristor is formed at a central part, and an auxiliary or main thyristor is formed around said auxiliary thyristor. Thus a semiconductor pellet 20 is constituted. An anode side external electrode 35 is connected to an anode electrode 40 of the pellet 20, and a cathode side external electrode 30 is provided at a pellet cathode electrode through an intermediate buffer plate 1. At the center of the intermediate buffer plate 1, an opening for passing an optical fiber 17, which introduces igniting light, is provided. In a direct light igniting type semiconductor controlled rectifying device constituted in this way, a recess is formed at a specified position of the intermediate buffer plate 1, i.e., a part facing the auxiliary thyristor part. In this constitution, the buffer plate 1 and the auxiliary thyristor part are not contacted even though the buffer plate 1 is compressed to the pellet 20 by the external cathode electrode 30. Therefore, the short circuit between the gate and the cathode of the auxiliary thyristor part can be prevented.
摘要翻译：目的：为了防止当中间缓冲板被压缩成颗粒时，通过在面向中间缓冲板的辅助晶闸管部分的部分处设置凹部来防止栅极和阴极之间的短路。构成：在中心部分形成直接点火型辅助晶闸管，在辅助晶闸管周围形成辅助或主晶闸管。由此构成半导体芯片20。阳极侧外部电极35连接到颗粒20的阳极电极40，阴极侧外部电极30通过中间缓冲板1设置在颗粒状阴极电极。在中间缓冲板1的中心，提供用于通过引入点火灯的光纤17的开口。在以这种方式构成的直接点亮型半导体控制整流装置中，在中间缓冲板1的特定位置，即面对辅助晶闸管部分的部分形成凹部。在这种结构中，即使缓冲板1被外部阴极电极30压缩到颗粒20，缓冲板1和辅助晶闸管部分也不接触。因此，辅助晶闸管的栅极和阴极之间的短路部分可以防止。

52. 发明专利

JPS59132165A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS59132165A
公开(公告)日：1984-07-30
申请号：JP532683
申请日：1983-01-18
申请人： Hitachi Ltd
发明人： AKABANE KATSUMI , OTAI KOUGO , MUSHIYA SHIYUUJI , SAKAGAMI TADASHI , HAISHI TSUNEO , KONISHI NOBUTAKE
IPC分类号： H01L21/52 , H01L21/60 , H01L29/74 , H01L31/111
CPC分类号： H01L31/1113 , H01L2924/0002 , H01L2924/00
摘要： PURPOSE:To prevent a discharge phenomenon, by conductively connecting a metal connector, which is provided at the intermediate part of an insulating seal, to an anode electrode, or a cathode electrode, or a part having the same potential as that of the electrode. CONSTITUTION:In a light igniting type thyristor, metal lead wires 13A and 13B are connected to a connector 9, which is provided at the end part of an optical fiber 10. The lead wire 13A is connected to an external cathode electrode 6 through a metal flange 7K. The lead wire 13B is connected to a cathode electrode 4. In this constitution, the metal connector 9 is always kept at the same potential as that of the cathode electrode 4 when the thyristor is operated. Therefore, a discharge phenomenon between the connector 9 and the external cathode electrode 6, the flange 7K, and the like can be prevented. When the connector 9 is provided in the vicinity of an anode electrode 3, the anode side of said leads 13A and 13B are connected to the metal flange and the anode electrode.
摘要翻译：目的：为了防止放电现象，通过将设置在绝缘密封件的中间部分的金属连接器导电连接到阳极电极或阴极或具有与电极相同电位的部分。构成：在轻型晶闸管中，金属引线13A和13B连接到设置在光纤10的端部的连接器9.引线13A通过金属连接到外部阴极电极6 法兰7K。引线13B连接到阴极电极4.在这种结构中，当晶闸管工作时，金属连接器9总是保持与阴极电极4相同的电位。因此，可以防止连接器9和外部阴极电极6，凸缘7K之间的放电现象。当连接器9设置在阳极电极3附近时，所述导线13A和13B的阳极侧连接到金属凸缘和阳极电极。

53. 发明专利

JPS5887816A IMPURITY DOPING METHOD 失效
公开(公告)号：JPS5887816A
公开(公告)日：1983-05-25
申请号：JP18518581
申请日：1981-11-20
申请人： HITACHI LTD
发明人： INOUE KOUICHI , KONISHI NOBUTAKE , MURAKAMI SUSUMU
IPC分类号： H01L29/74 , H01L21/265
摘要： PURPOSE:To permit a high-impurity density n type conductive layer and a low- impurity density n type conductive layer to be simultaneously formed in one diffusion heat treatment without any restriction on the pattern size and density. CONSTITUTION:No oxide film is formed in a high-impurity density region A of a silicon substrate 1. On the other hand, in a low-impurity density region B, an oxide film 2b of thickness T1, as a mask, is formed on the surface of the silicon substrate 1, and in a region C where no n type impurities are diffused, an oxide film 2c of thickness T2 (larger than T1), as a mask, is formed on the surface of the silicon substrate 1. Under this state, P and As are implanted. As a result, P is implanted into both the regions A and B, while As is implanted into only the region A. After the implantation of P and As, the oxide films 2b and 2c are removed by etching, and a heat treatment is applied to form a P-diffused layer 5 and an As-diffused layer 6. In this case, the allowable range of the thickness T1 of the ion transmission control film 2b provided on the low-density region B is considerably wide.

54. 发明专利

JP2002139745A LIQUID CRYSTAL DISPLAY DEVICE 审中-公开
公开(公告)号：JP2002139745A
公开(公告)日：2002-05-17
申请号：JP2001226969
申请日：2001-07-27
申请人： HITACHI LTD
发明人： TANAKA TAKESHI , NAGAE KEIJI , KONISHI NOBUTAKE
IPC分类号： G02F1/1368 , G02F1/1362 , G09F9/00 , G09F9/30 , G09F9/35 , H01L21/336 , H01L29/786 , H04N5/66
摘要： PROBLEM TO BE SOLVED: To miniaturize the outside dimension of a high precision active matrix type liquid crystal display device and to reduce its manufacturing cost. SOLUTION: In the active matrix type liquid crystal display device using a thin film transistor, a part of driving circuits is incorporated in the peripheral part of a substrate and one or two drivers are connected to the part and mounted collectively on one side on the substrate by a chip on glass method. The substrate on which a polymer dispersion type liquid crystal is applied and dried is used to omit a counter substrate.

55. 发明专利

JP2000019527A LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JP2000019527A
公开(公告)日：2000-01-21
申请号：JP18419498
申请日：1998-06-30
申请人： HITACHI LTD
发明人： ASUMA HIROAKI , TANNO JUNJI , MATSUYAMA SHIGERU , KONISHI NOBUTAKE
IPC分类号： G02F1/1339 , G02F1/1337 , G02F1/1343 , G02F1/136 , G02F1/1368 , G09F9/30
摘要： PROBLEM TO BE SOLVED: To suppress the lowering of brightness and contrast by preventing the lowering of brightness due to contamination of liquid crystal caused by columnar spacers and the generation of an electric short-circuit between substrates. SOLUTION: This device is equipped with polarizing plates POL1, POL2 and a driving means for applying a driving voltage to a group of electrodes. The device is provided with the arrayed structure of the electrodes arranged as the group of electrodes applies a primarily parallel voltage to boundaries between orientation controlling layers ORI1, ORI2 and a liquid crystal layer LC and columnar spacers SP formed by patterning of an overcoat layer OC film-formed on the upper layer of black matrices BM an color filters FIL and under the lower layer of the orientation controlling layer ORI2. In this case, the base part and the top part of the columnar spacer SP have about the same area, its cross-section in the direction in parallel to the plane of substrates has an acute angle shape to the direction of rubbing and the top part of the orientation controlling layer ORI2 film-formed on the upper layer of the columnar spacer SP is brought in contact with the orientation controlling layer ORI1 of the other substrate SUB1.

56. 发明专利

JPH11345980A LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JPH11345980A
公开(公告)日：1999-12-14
申请号：JP12672099
申请日：1999-05-07
申请人： HITACHI LTD
发明人： AOYAMA TAKASHI , KONISHI NOBUTAKE , SUZUKI TAKAYA , MIYATA KENJI
IPC分类号： H01L27/12 , G02F1/136 , G02F1/1368 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To improve the picture quality of a liquid crystal display device by forming a polycrystalline silicon film oriented in a specific direction on a glass substrate as the active layer of a thin film semiconductor device. SOLUTION: When a peripheral driving circuit is formed in a liquid crystal display device LCD by using a polycrystalline silicon thin film transistor(TFT) which is mainly aligned in 111}, in which carriers can move with high mobility, the number of the picture elements of the displaying section 5 of the display device LCD can be increased. The driving circuit of the display device LCD is generally divided into a scanning circuit 8 and a signal circuit, and the signal circuit is composed of a multiplexer 9, a divided matrix switch 10, and a high- speed shift register 11 externally attached to a substrate 4. The pixels of the displaying section 5 are composed of TFTs 20 which are active elements and capacitors 19 consisting of liquid crystals which are displaying media and picture electrodes and arranged in a matrix-like state. The number of the pixels of the displaying section 5 varies principally depending upon the characteristics of the multiplexer 9 and partitioned matrix switch 10 of the signal circuit.

57. 发明专利

JPH11345979A LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JPH11345979A
公开(公告)日：1999-12-14
申请号：JP12671999
申请日：1999-05-07
申请人： HITACHI LTD
发明人： AOYAMA TAKASHI , KONISHI NOBUTAKE , SUZUKI TAKAYA , MIYATA KENJI
IPC分类号： H01L27/12 , G02F1/136 , G02F1/1368 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a liquid crystal display device of high performance and high image quality. SOLUTION: This liquid crystal display device is provided with a plurality of thin film semiconductor elements arranged in a matrix form, and a plurality of pixel electrodes connected with a plurality of the respective thin film semiconductor elements, on a normal glass substrate 4. A polycrystalline silicon film where 111} is main orientation is formed as an active layer of the thin film semiconductor elements, on the glass substrate 4. By using the above structure, image quality of the liquid crystal display device can be improved.

58. 发明专利

JPH11149085A LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JPH11149085A
公开(公告)日：1999-06-02
申请号：JP25104198
申请日：1998-09-04
申请人： HITACHI LTD
发明人： YANAGAWA KAZUHIKO , OTA MASUYUKI , OGAWA KAZUHIRO , ASHIZAWA KEIICHIRO , YANAI MASAHIRO , KONISHI NOBUTAKE , KINUGAWA KIYOSHIGE , MISHIMA YASUYUKI
IPC分类号： G02F1/1333 , G02F1/1335 , G02F1/13357 , G02F1/1343
摘要： PROBLEM TO BE SOLVED: To prevent the malfunction of a display from occurring even when a high potential such as static electricity, etc., is impressed thereon from outside a liquid crystal panel surface. SOLUTION: A liquid crystal display device has such a configuration as it comprises a liquid crystal panel and a backlight unit for making the light transmit a screen of this liquid crystal display panel; the liquid crystal panel comprises display electrodes in each picture element area on the liquid crystal surface side of one of the transparent substrates placed opposite to each other via a liquid crystal layer and a reference electrode arranged apart from the display electrodes; and an electric field component parallel to the transparent substrate generated between the display electrode and the reference electrode is made to control the light transmittance of the liquid crystal layer. In this case, at least in a picture element area on a surface opposite to the liquid crystal layer LC of the transparent substrate 1A on a side farther to the backlight unit, a transparent conductive film is formed in the same direction as the electric field component parallel to the transparent substrate, and also the transparent substrate with this conductive film formed thereon is two figures and more as thick as the length between the display electrode and the reference electrode, and secures an electric field component parallel to the transparent substrate generated between the display electrode and the reference electrode.

59. 发明专利

JPH09181325A MANUFACTURE OF THIN FILM SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH09181325A
公开(公告)日：1997-07-11
申请号：JP27582396
申请日：1996-10-18
申请人： HITACHI LTD
发明人： AOYAMA TAKASHI , OIKAWA SABURO , OKAJIMA YOSHIAKI , KONISHI NOBUTAKE , KAWACHI GENSHIROU , ADACHI HIDEMI , SUZUKI TAKAYA , MIYATA KENJI
IPC分类号： C30B29/06 , C23C16/24 , C30B33/02 , H01L21/02 , H01L21/20 , H01L21/205 , H01L21/324 , H01L21/336 , H01L27/12 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To enlarge the mobility of a carrier when a thin film transistor is generated by forming a polycrystalline silicon film on the glass substrate of specific distortion temperature at a temperature less than a specific temperature and annealing the glass substrate at the temperature less than the specific temperature. SOLUTION: The substrate 1 is the glass board with the distortion temperature of about 640 deg.C. When the substrate 1 is held at the temperature less than 570 deg.C, an LPCVD thin film 2 is deposited and heat treatment is executed for 24 hours on the condition of less than 640 deg.C in N2 , main orientation of an obtained poly-Si film becomes 111}. Since the poly-Si film (a) with the orientation of 111} exhibits relatively low trap density, the width of the depletion layer produced in a grain boundary becomes narrow and a potential barrier here becomes slow. Then, the carrier of the thin film transistor flows in a direction parallel to the poly-Si film. Thus, the mobility of the carrier becomes relatively large in poly-Si with the orientation of 111} compared to the orientation of 110}. Thus, the thin film semiconductor device where the mobility of the carrier is large at the comparatively low process temperature can be obtained.

60. 发明专利

JPH0990410A ACTIVE MATRIX TYPE LIQUID CRYSTAL DISPLAY DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH0990410A
公开(公告)日：1997-04-04
申请号：JP24168095
申请日：1995-09-20
申请人： HITACHI LTD
发明人： OTA MASUYUKI , OGAWA KAZUHIRO , ASHIZAWA KEIICHIRO , YANAGAWA KAZUHIKO , YANAI MASAHIRO , KONISHI NOBUTAKE
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1368
摘要： PROBLEM TO BE SOLVED: To provide an active matrix type liquid crystal display device of a horizontal electric field system high in contrast and high in picture quality without causing any brightness unevenness. SOLUTION: This active matrix type liquid crystal display device has one pair of substrates(SUB1, SUB2), a liquid crystal layer(LC) held in between one pair of substrates, plural active elements(TFTs) formed in a matrix shape on the substrate of one side, plural pixels (PXs) to be respectively connected to plural active elements(TFTs) and plural counter electrodes(CTs) formed on either of the pair substrates and impressing electric fields almost parallel with the substrate to the liquid crystal layer(LC) in between pixel electrode (PXs) and the electrodes (CTs). Then, the angle formed by the side faces of the electrodes of at least either one of the pixel electrodes (PXs) and the counter electrodes (CTs) and the substrate face is defined as >0 deg. to

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式