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51. 发明专利

JPH05243547A 失效
公开(公告)号：JPH05243547A
公开(公告)日：1993-09-21
申请号：JP4439292
申请日：1992-03-02
申请人： HITACHI LTD
发明人： KANEKO YOSHIYUKI , YAMAGUCHI MUNEAKI , TSUTSUI KEN
IPC分类号： H01L27/146 , H04N5/335 , H04N5/355 , H04N5/369 , H04N5/374
摘要： PURPOSE:To provide a TFT-type thin film photosensor having a large photocurrent which is suitable for a close contact type two dimensional image sensor. CONSTITUTION:The thickness of a gate insulating film 15 of a photosensor TFT is made larger than that of a gate insulating film 16 of a switching TFT and a gate insulating film/amorphous silicon interface in each TFT is formed under the same conditions. Thereby, it is possible to improve a photocurrent and to cope with the demands of small devices with more fine element structure.

52. 发明专利

JPH04179270A TWO-DIMENSIONAL IMAGE SENSOR 失效
公开(公告)号：JPH04179270A
公开(公告)日：1992-06-25
申请号：JP30632390
申请日：1990-11-14
申请人： HITACHI LTD
发明人： TSUTSUI KEN , YAMAGUCHI MUNEAKI , KANEKO YOSHIYUKI , TSUKADA TOSHIHISA
IPC分类号： H01L23/29 , H01L23/31 , H01L27/146
摘要： PURPOSE:To limit the number of point defects to the number of shorts between an opaque film and transistor electrodes by providing separate opaque films for individual transistors, and maintaining the opaque films floating. CONSTITUTION:The respective opaque films of a pixel-switching transistor, a horizontal switching transistor, and a noise-limiting transistor are independently maintained to be floating. Chrome is deposited as conductor on a transparent substrate 1 to form an opaque film 21 for a phototransistor, and a capacitor electrode 201. After a first insulating film 51 is deposited over the surface, a second insulating film 52, a semiconductor 61, and an ohmic contact layer 62 are deposited. Then, contact holes 71, 72, and 73 are opened, and amorphous silicon is deposited on the areas of the phototransistor and pixel-switching transistor. Silicon nitride is deposited as a protective film 53, and then aluminum is deposited to form the opaque film 22 for pixel-switching transistor.

53. 发明专利

JPH0381122B2 失效
公开(公告)号：JPH0381122B2
公开(公告)日：1991-12-27
申请号：JP23132383
申请日：1983-12-09
申请人： HITACHI LTD
发明人： SASANO AKIRA , NAKANO TOSHIO , TSUTSUI KEN , HASHIMOTO MICHIAKI , KANEKO TADAO , TANIGUCHI MORIO , IZUMI AKYA
IPC分类号： G02B5/20 , G02B5/22 , H01L27/14 , H01L31/0216

54. 发明专利

JPH0350526A LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JPH0350526A
公开(公告)日：1991-03-05
申请号：JP18463089
申请日：1989-07-19
申请人： HITACHI LTD
发明人： KANEKO YOSHIYUKI , TSUTSUI KEN , KOIKE NORIO , TSUKADA TOSHIHISA
IPC分类号： G02F1/136 , G02F1/133 , G02F1/1368 , G09G3/36 , H01L27/12 , H01L29/78 , H01L29/786
摘要： PURPOSE:To lead a large current out at the time of positive-polarity signal writing operation without varying the size of a thin film transistor (TFT) by giving asymmetry to the current driving ability of the TFT which drives the device. CONSTITUTION:Thin film transistors of respective picture elements have the asymmetry in current driving ability. The 1st gate electrode 31 and 2nd gate electrode 33 of each TFT are driven with the same potential, but the thickness of an effective gate insulating film is the sum of the thickness of a 1st gate insulating film 32 and the thickness of a 2nd gate insulating film 34 on the side of a data electrode 39 and only the thickness of the 2nd gate insulating film 34 on the side of a picture element electrode 41. Namely, when the side of the picture element electrode 41 is a source electrode, electron injection is accelerated corresponding to large gate insulating film capacity. Consequently, the large current can be led out at the time of positive-polarity signal writing without increasing the size of the TR.

55. 发明专利

JPH02234431A ANODIC OXIDATION METHOD OF THIN-FILM PATTERN 失效
公开(公告)号：JPH02234431A
公开(公告)日：1990-09-17
申请号：JP5381189
申请日：1989-03-08
申请人： HITACHI LTD
发明人： MATSUMARU HARUO , YAMAMOTO HIDEAKI , TSUTSUI KEN , TANAKA YASUO , TSUKADA TOSHIHISA
IPC分类号： H01L21/3205 , H01L21/316
摘要： PURPOSE:To prevent defects such as blow-out of a metal even if adhesion properties of a photo resist film become weak due to influence of an electrolytic solution and it is released by providing an insulation film at the lower part of the photo resist film when forming a mask pattern with the photo resist film and performing anodic oxidation. CONSTITUTION:An Al wiring pattern 2 is formed on a glass substrate 1, a photo resist pattern 2 is formed at a specified position of this Al wiring, a first anodic oxidation is performed in this state, and then a photo resist film 3 is eliminated. Then a part which is not subjected to anodic oxidation is selectively covered by a photo resist film 5 and then anodic oxidation is performed again by placing the edge part of the film 5 onto a film 4 which is subjected to anodic oxidation at low voltage, thus eliminating the photo resist film 5. Thus, even if the edge part of the photo resist film is released during anodic oxidation, the metal surface is not exposed and the film has withstand voltage electrically since the part is made of an insulating material, thus preventing fusing-and-cutting of metal due to concentration of electric field from occurring.

56. 发明专利

JPH0219840A MANUFACTURE OF ACTIVE MATRIX PANEL 失效
公开(公告)号：JPH0219840A
公开(公告)日：1990-01-23
申请号：JP16885388
申请日：1988-07-08
申请人： HITACHI LTD
发明人： TSUTSUI KEN , TSUKADA TOSHIHISA , YAMAMOTO HIDEAKI , TANAKA YASUO , MATSUMARU HARUO
IPC分类号： G02F1/136 , G02F1/1343 , G02F1/1362 , G02F1/1368 , G09F9/30 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/78 , H01L29/786
摘要： PURPOSE:To reduce the process of an active matrix panel manufacturing process so as to improve the productivity of the panel by simultaneously forming picture element electrodes and gate electrodes of thin-film transistors in a pattern and removing metallic films on the picture element electrodes at the same time when the source and drain electrodes of the transistors are formed. CONSTITUTION:At least picture element electrodes 12 and gate electrodes 11 of thin-film transistors are simultaneously formed in a pattern by working a two-layer film of a transparent conductive film 101 and metallic film successively formed on a substrate 100 by using one photomask and the metallic film on the picture element electrodes 12 is removed at the same time when the source 52 and drain electrodes 51 of the thin-film transistor sections A are formed by photolithography. Therefore, the metallic film can be removed without increasing a process. When the metallic film is removed, unnecessary parts of amorphous silicon films containing impurities, etc., deposited on a gate insulating film are also removed. Therefore, the number of photomasks and the process can be reduced and the yield can be improved in the mass production of this active matrix panel.

57. 发明专利

JPH01274116A LIQUID CRYSTAL DISPLAY PANEL 失效
公开(公告)号：JPH01274116A
公开(公告)日：1989-11-01
申请号：JP10250988
申请日：1988-04-27
申请人： HITACHI LTD
发明人： TANAKA YASUO , TSUKADA TOSHIHISA , KANEKO YOSHIYUKI , YAMAMOTO HIDEAKI , MATSUMARU HARUO , TSUTSUI KEN
IPC分类号： G02F1/136 , G02F1/133 , G02F1/1343 , G02F1/1368
摘要： PURPOSE:To increase the size of an additive capacity to obviate the decrease in an aperture rate by incorporating an oxide of a metal essentially consisting of Ta into a dielectric film of the part to be superposed via a dielectric film between a picture element electrode of an i-th line and a gate line of the next stage. CONSTITUTION:A material contg. the oxide of the metal essentially consisting of the Ta is used as the dielectric film 24 of the superposed part 23-24-9 constituting the additive capacity so as to be confined within a black matrix region. The specific dielectric constant of the oxide (Ta2O5) of the Ta is about 26 and is 3.8 times the specific dielectric constant 6.9 of an SiN film and, therefore, the occupying area of the additive capacity can be decreased to 1/3.8 when the SiN dielectric film is substd. with the Ta2O5 film having the same thickness. The disposition of the additive capacity pattern increased to be absorbed in the black matrix region within one picture element is enabled. The decrease of the opening rate of one picture element is, therefore, prevented.

58. 发明专利

JPH01268062A THIN FILM TRANSISTOR 失效
公开(公告)号：JPH01268062A
公开(公告)日：1989-10-25
申请号：JP9552788
申请日：1988-04-20
申请人： HITACHI LTD
发明人： TANAKA YASUO , MATSUMARU HARUO , TSUTSUI KEN , YAMAMOTO HIDEAKI , KANEKO YOSHIYUKI
IPC分类号： H01L27/12 , H01L29/78 , H01L29/786
摘要： PURPOSE:To prevent the increase in OFF current due to the projection of light from the side of a gate electrode, by a constitution wherein an a-Si:H(i) film is cut at the step part of a gate electrode, and an a-Si:H(n) film is connected. CONSTITUTION:On a light transmitting substrate 11, the following parts are sequentially formed on a thin film transistor: a gate electrode 12, a gate insulating film 13, an amorphous silicon hydride intrinsic semiconductor layer [a-Si:H (i)] 14, an N-type amorphous silicon hydride semiconductor layer [a-Si:H(n)] 15, source and drain electrodes 16 and 17, an ITO picture element electrode, a protecting film 18 and a light screening film 19. In this transistor, the a-Si:H(i) film 14 is cut at the step part of the gate electrode 12, and the a-Si:H(n) film 15 is connected. For example, the main component of the gate electrode 12 is any one of Cr, Mo, Ta, Ti, Al and mixed material thereof. The step part of the end part of the pattern has the maximum inclination of 60 deg. or more. Thus, the structure of said a-Si film 14 can be readily formed.

59. 发明专利

JPS6158802B2 失效
公开(公告)号：JPS6158802B2
公开(公告)日：1986-12-13
申请号：JP21128984
申请日：1984-10-11
申请人： HITACHI LTD
发明人： TANIGUCHI SUGIO , NAKANO TOSHIO , KANEKO TADAO , TSUTSUI KEN , SASANO AKIRA , KOIKE NORIO , IZUMI AKYA
IPC分类号： G02B5/20 , H01L27/14 , H04N9/04 , H04N9/07

60. 发明专利

JPS6034086B2 失效
公开(公告)号：JPS6034086B2
公开(公告)日：1985-08-07
申请号：JP14223984
申请日：1984-07-11
申请人： HITACHI LTD
发明人： TANIGUCHI MORIO , NAKANO TOSHIO , KANEKO TADAO , TSUTSUI KEN , HASHIMOTO MICHIAKI , SASANO AKIRA , IZUMI AKYA
IPC分类号： G02B5/20 , H01L27/14 , H01L31/0216

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