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51. 发明专利

JPS6135585A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：JPS6135585A
公开(公告)日：1986-02-20
申请号：JP15522284
申请日：1984-07-27
申请人： Hitachi Ltd
发明人： TSUJI SHINJI , NAKAMURA HITOSHI , OISHI AKIO , HIRUMA TAKEYUKI , FUKUZAWA TADASHI , KAYANE NAOKI , MATSUMURA HIROYOSHI
IPC分类号： H01S5/00 , H01S5/10 , H01S5/12 , H01S5/183
CPC分类号： H01S5/12 , H01S5/1206 , H01S5/1215 , H01S5/1225 , H01S5/18305
摘要： PURPOSE:To obtain a semiconductor laser device which operates stably in the longitudinal single mode even during the modulation, by providing variations in the refractive index in the direction of propagation of light in a region on or near an active layer to which a photoelectric field extends. CONSTITUTION:Diffraction gratings having different pattern dimensions and a constant period of about 2,300Angstrom are formed all over the surface of an N type InP substrate 1 by X-ray lithography using a metal pattern as a mask. A diffraction grating having a depth of 400Angstrom and a width which varies in a range from 300-1,500Angstrom is transferred by employing the RIE method. An N type InGaAsP light guide layer 2, an InGaAsP active layer 3, a P type InGaAsP buffer layer 4, a P type InP layer 5 and InGaAsP surface layer 6 are laminated. A P-side electrode 8 and an N-side electrode 9 are respectively deposited on the upper and lower surfaces by evaporation, and cleavage is effected to obtain a desired semiconductor laser device. In this device, an average refractive index near the center of the cavity is larger than those near both ends of the cavity. Therefore, an oscillation molde is selectively obtained at a wavelength which is shorter than the Bragg wavelength, and the laser device operates in a single mode.
摘要翻译：目的：为了获得半导体激光器件，其即使在调制期间也以纵向单一模式稳定地工作，通过在光电场延伸的有源层上或附近的区域中提供光的传播方向上的折射率的变化。构成：通过使用金属图案作为掩模的X射线光刻，在N型InP衬底1的整个表面上形成具有不同图案尺寸和约2,300A恒定周期的衍射光栅。通过采用RIE方法转移深度为400A，宽度在300-1,500A范围内变化的衍射光栅。层叠N型InGaAsP光导层2，InGaAsP有源层3，P型InGaAsP缓冲层4，P型InP层5和InGaAsP表面层6。通过蒸发在上表面和下表面上分别沉积P侧电极8和N侧电极9，进行切割以获得期望的半导体激光器件。在该装置中，空腔中心附近的平均折射率大于腔体两端附近的平均折射率。因此，在比布拉格波长短的波长下选择性地获得振荡模具，并且激光装置以单一模式工作。

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