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51. 发明专利

JPS5877264A MANUFACTURE OF JOSEPHSON ELEMENT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS5877264A
公开(公告)日：1983-05-10
申请号：JP17565181
申请日：1981-11-04
申请人： HITACHI LTD
发明人： HIRANO MIKIO , NISHINO JIYUICHI , YAMADA KOUJI , YAMASHITA KUNIO , SHIGETA JIYUNJI , YANO SHINICHIROU
IPC分类号： H01L39/22 , H01L39/24
摘要： PURPOSE:To obtain the stabilized barrier layer for the titled Josephson element by a method wherein, in the case of an element which was formed by superposing a superconductive alloy containing at least either of Nb and Pb, NbFx of 20-60Angstrom in thickness is provided as a barrier layer on the surface of the underlayer electrode of Nb through the intermediary of an extremely thin barrier layer. CONSTITUTION:An Nb electrode is formed on a Si substrate, an window is provided on an interlayer insulating film, and after a sputtering has been performed on the electrode surface in a decompressed Ar, an NbFx of 20-60Angstrom in thickness is formed while plasma of high frequency output of 10-50W is being discharged in the Freon gas pressure of 1X10 Torr, and the temperature is maintained at 80-120 deg.C during the performance of above procedure. Lastly, the upper electrode of Pb-Bi (30wt%) is vapor-deposited. Thus, an extremely thin NbFx film can be formed while stably maintaining the fluorine growing speed by utilizing the activity of an F-ion and exposing the metal in the plasma discharge where the etchability of metal is considerably reduced. According to this constitution, an Nb tunnel junction type Josephson element can be obtained with excellent reproducibility and stabilized characteristics.

52. 发明专利

JPS5868901A JOSEPHSON INTEGRATED CIRCUIT RESISTANCE ELEMENT 失效
公开(公告)号：JPS5868901A
公开(公告)日：1983-04-25
申请号：JP16720781
申请日：1981-10-21
申请人： HITACHI LTD
发明人： NISHINO JIYUICHI , SHIGETA JIYUNJI , HIRANO MIKIO
IPC分类号： H01C7/00 , H01L39/22

53. 发明专利

JPS5815079B2 失效
公开(公告)号：JPS5815079B2
公开(公告)日：1983-03-23
申请号：JP931678
申请日：1978-02-01
申请人： HITACHI LTD
发明人： HORIUCHI SUSUMU , TSUCHA HIROYUKI , KITAMURA MASAO , YUSA HIDEO , HIRANO MIKIO
IPC分类号： G21F9/08 , G21F9/00 , G21F9/06 , G21F9/30

54. 发明专利

JPS5834399A RADIOACTIVE WASTE TRANSFER APPARATUS 失效
公开(公告)号：JPS5834399A
公开(公告)日：1983-02-28
申请号：JP13273081
申请日：1981-08-26
申请人： HITACHI LTD , HITACHI ENG CO LTD
发明人： HORIUCHI SUSUMU , HIRANO MIKIO , TOMATSURI HIROICHI , ISHIKAWA RIYOUICHI
IPC分类号： B65G45/00 , B65G21/20 , B65G45/18 , B65G45/22 , G21F9/00 , G21F9/28 , G21F9/36

55. 发明专利

JPS582638B2 失效
公开(公告)号：JPS582638B2
公开(公告)日：1983-01-18
申请号：JP8865778
申请日：1978-07-19
申请人： HITACHI LTD
发明人： HORIUCHI SUSUMU , TANIGUCHI TAKASHI , TAKESHIMA MASAKI , HIRANO MIKIO , YUSA HIDEO
IPC分类号： G21F5/00 , G21F9/00 , G21F9/14 , G21F9/30 , G21F9/34 , G21F9/36

56. 发明专利

JPS57142598A METHOD OF STIRRING LARGE TANK 失效
公开(公告)号：JPS57142598A
公开(公告)日：1982-09-03
申请号：JP2700981
申请日：1981-02-27
申请人： HITACHI LTD , HITACHI ENG CO LTD
发明人： HORIUCHI SUSUMU , HIRANO MIKIO , SAITOU TOORU , HOSHINO RIYOUICHI
IPC分类号： G21F9/22

57. 发明专利

JPS5793299A SOLIDIFYING TREATMENT OF RADIOACTIVE WASTE 失效
公开(公告)号：JPS5793299A
公开(公告)日：1982-06-10
申请号：JP16909480
申请日：1980-12-02
申请人： HITACHI LTD
发明人： HORIUCHI SUSUMU , HIRANO MIKIO , SAITOU TOORU
IPC分类号： G21F9/16 , G21F9/00

58. 发明专利

JPS56116643A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS56116643A
公开(公告)日：1981-09-12
申请号：JP1903980
申请日：1980-02-20
申请人： HITACHI LTD
发明人： HIRANO MIKIO , OOJI YUZURU , MUKAI KIICHIROU , MURAMATSU SHINICHI , TAKAHASHI SHIGERU , YOSHIDA IKUO , HIRAIWA ATSUSHI
IPC分类号： H01L21/60 , H01L23/485
摘要： PURPOSE:To increase production recovery rate by improving covering performance at stepped section remarkably and stabilizing etching of conductor wiring layer, when forming a solder bump electrode, by forming only metallic membrane on the topmost layer selectively by electroplating process. CONSTITUTION:A first layer wiring 22, which is formed through an SiO2 membrane 20 on an Si substrate 21, is covered with an SiO2 membrane 23 and provided with a window 24. Ti25 and Cu26 are brazed in turn and provided with a resist mask 27. Cr29 (or Fe or Ti) is plated on Cu with Cu26 as a cathode, and the resist 27 is removed. By providing another resist mask 30 and plating Ni31, Sn32 and Pb33, a projecting electrode is formed. By eliminating the resist 30 and etching Cu26 and Ti25 with Cr29 as a mask, the second layer wiring is formed. And then, by heating it for approximately 30 seconds at 350 deg.C, the projecting electrode is melted and turned into a hemispherical solder bump 34. It is possible, by using this mechanism, to prevent the thin second layer wiring from breakage even at the time when it is laid on a stepped section on an element, and therefore, a solder electrode can be formed in a given region.

59. 发明专利

JPS56114800A CENTRIFUGAL THIN FILM EVAPORATOR 失效
公开(公告)号：JPS56114800A
公开(公告)日：1981-09-09
申请号：JP1668980
申请日：1980-02-15
申请人： HITACHI LTD
发明人： TAKAMURA YOSHIYUKI , MAZAKI YASUNORI , CHINO KOUICHI , HIRANO MIKIO
IPC分类号： B01D1/22 , C02F1/08 , G21F9/00 , G21F9/08

60. 发明专利

JPS56100626A OPERATING METHOD OF GRANULATING DEVICE 失效
公开(公告)号：JPS56100626A
公开(公告)日：1981-08-12
申请号：JP237180
申请日：1980-01-11
申请人： HITACHI LTD
发明人： HORIUCHI SUSUMU , HIRANO MIKIO , HIRAOKA TAIJI , TSUGA SHIYOUICHI
IPC分类号： B01J2/22
摘要： PURPOSE:To steadily produce granules of high strength by stopping the operation of the granulating device when the amount of fine particles in a fine particle supply part, which supplies fine particles to the granule molding part of the granulating device, comes to less than a predetermined value. CONSTITUTION:The concd. liquid of the radioactive regenerated waste liquid produced from a boiling water reactor is supplied from a supply tank 1 into the vessel of a centrifugal thin film dryer 3, where sodium sulfate is deposited by heating and is dried to fine particles. The fine particles are led to the hopper 10 of a granulating machine 9 through a hopper 4, from which they are supplied to between a pair of rolls 11A and 11B, and are molded by the recesses provided on the roll surfaces. The decrease in the amount of the fine particles in the hopper 10 is detected by the number of revolution of a screw feeder 12, and the number of the revolutions thereof is detected with a detector 19. When it reaches a set value, the supply of current to a motor 13 is stopped, whereby the revolution of a screw feeder 12 is stopped.

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