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    • 52. 发明专利
    • SURFACE ACOUSTIC WAVE RESONATOR COMPOSITE-TYPE FILTER
    • JPH10145172A
    • 1998-05-29
    • JP30442496
    • 1996-11-15
    • HITACHI LTD
    • SHIBAGAKI NOBUHIKOHIKITA MITSUTAKASAKIYAMA KAZUYUKI
    • H03H9/145H03H9/25H03H9/64
    • PROBLEM TO BE SOLVED: To manufacture the filter with a sharp and wide band, which is demanded by a vehicle and a portable telephone set by using the change in resonance characteristics, generated by varying the film thickness of electrode thin films in plural surface acoustic wave resonators formed on the same piezoelectric substrate. SOLUTION: Four surface acoustic wave resonators, constituted of electrodes 3-8 and one gap capacitor constituted of electrodes 9 and 19, are provided on a piezoelectric board 1, that can transmit a surface acoustic wave so as to form the composite filter. The electrode 4 is electrically connected to an electrode pattern 10 by bonding wire 11, and matching inductances 23-26 and sound- absorbing materials 31-36 are provided. In such a case, the electrode film thickness h1 and h2 of the electrodes 3-5 and that of the electrodes 6-8 on the board 1 are set to be 900Å and 2700Å, and a filter characteristics is composited by using the difference of the resonance characteristics, which are generated by the difference in film thickness. Thus, a filter of the sharp and wide frequency characteristics, which is requested in digital movable communication, can be obtained.
    • 55. 发明专利
    • SURFACE ACOUSTIC WAVE DEVICE
    • JPH06164305A
    • 1994-06-10
    • JP30674992
    • 1992-11-17
    • HITACHI LTD
    • ISOBE ATSUSHIHIKITA MITSUTAKAASAI KENGO
    • H03H9/25
    • PURPOSE:To provide a low-loss filter and a filter whose attenuation amount is large by specifying the rotation angle of a cut surface measured from a Y axis and an angle between a surface acoustic wave propagating direction and an X axis. CONSTITUTION:In a surface acoustic wave device using Love wave type surface acoustic waves for not emitting energy to the inside of a substrate constituted of a rotation Y cut crystal piezoelectric substrate for which the rotation angle of the cut surface measured from the Y axis is (theta+90 deg.) and an electrode formed on its surface by a metallic film, when the angle between the surface acoustic wave propagating direction and the X axis is psi, it is defined as 20 deg. can be enlarged but also transmission/reception is facilitated by the electrode present on the substrate surface. Thus, energy loss can be reduced and the small high-performance surface acoustic wave device can be obtained since the spurious components of the Rayleigh waves are small.
    • 56. 发明专利
    • SURFACE ACOUSTIC WAVE DEVICE
    • JPH05129878A
    • 1993-05-25
    • JP28836591
    • 1991-11-05
    • HITACHI LTD
    • ISOBE ATSUSHIHIKITA MITSUTAKAASAI KENGO
    • H03H9/25H03H9/64
    • PURPOSE:To provide the small sized surface acoustic wave device with a low loss, a zero temperature characteristic by using a crystal substrate whose angles theta, phi have a specific relation, where PHI is an angle with respect to the X axis in the surface acoustic wave propagation direction in the theta+90 deg. rotation Y-cut crystal substrate and the electrode made of gold or silver on the surface of the substrate. CONSTITUTION:Angles theta, phi are selected to have a relation in equation I, where phiis the surface acoustic wave propagation direction measured from the X axis by using a crystal Love wave and theta+90 deg. is a rotation angle of a cut face measured from the Y axis. The device is made of the crystal substrate whose angles theta, phi have a specific relation and of the metallic thin film electrode formed on the surface of the crystal substrate. Thus, the characteristic of a low loss and a high Q is realized. Furthermore, since gold with a large reflection coefficient is employed for the electrode, a very high Q (=1000) is obtained with a few electrode finger logarithum and the element is made smaller than a conventional element by using it.
    • 57. 发明专利
    • SURFACE ACOUSTIC WAVE DEVICE
    • JPH0563498A
    • 1993-03-12
    • JP22564391
    • 1991-09-05
    • HITACHI LTD
    • ISOBE ATSUSHIHOSHINA YOSHINORIASAI KENGOIMURA AKIRAHIKITA MITSUTAKA
    • H03H9/25
    • PURPOSE:To easily obtain the surface acoustic wave device reducing a temperature characteristic and a change with the passage of time by fixing a piezoelectric substrate to a stem or a substrate by sandwiching the piezoelectric substrate between two solids. CONSTITUTION:A leaf spring 4 is put under a piezoelectric substrate 1, the piezoelectric substrate 1 is sandwiched by pawls 5 from the upside, the piezoelectric substrate 1 is pressed to the leaf spring 4 by fastening screws 6, and the piezoelectric substrate 1 is fixed by utilizing this elasticity. Thus, since the piezoelectric substrate 1 is fixed to a stem 2 by sandwiching the piezoelectric substrate 1 with the two solids 4 from the surface and the back or from both side faces, etc., any adhesive agent as a gas generating source is not used. Since metal generates no gas differently from silicone resin, no change is generated with the passage of time, and the thermal expansion of the piezoelectric substrate 1 is not blocked by using the elasticity. Further, since the solid springs 4 are utilized in place of the adhesive agent, the device can be easily realized by improving the stem 2 a little. In this case, non-metal such as plastic or ceramic, etc., not to generate gas can be used in place of metal.
    • 58. 发明专利
    • SURFACE ACOUSTIC WAVE DEVICE
    • JPH04192611A
    • 1992-07-10
    • JP17521090
    • 1990-07-04
    • HITACHI LTD
    • ISOBE ATSUSHIHIKITA MITSUTAKAIMURA AKIRAHOSHINA YOSHINORISAKIYAMA KAZUYUKI
    • H03H9/145H03H9/25
    • PURPOSE:To realize a surface acoustic wave device with an excellent temperature characteristic by making a rate of a change in a propagation speed of a surface acoustic wave with respect to a temperature substantially equal to a thermal expansion rate of a piezoelectric substrate. CONSTITUTION:The device is provided with a piezoelectric substrate 1 through which a surface acoustic wave is propagated, and metallic films 2, 3 to stimulate, to receive or to reflect the surface acoustic wave on the piezoelectric substrate 1. Then a sum of a rate of a chance in a propagation speed of a surface acoustic wave with respect to a temperature while the metallic films 2, 3 are provided onto the piezoelectric substrate 1 and a thermal expansion rate of the piezoelectric substrate 1 is selected smaller than a sum of a rate of a change in a propagation speed of a surface acoustic wave with respect to a temperature while the metallic films 2, 3 are not provided onto the piezoelectric substrate 1 and a thermal expansion rate of the piezoelectric substrate 1. Thus, the temperature characteristic of the amplitude or phase of a surface acoustic wade while the metallic films 2, 3 for an aluminum electrode or the like are provided is improved.