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    • 52. 发明专利
    • RECTIFIER ELEMENT AND MANUFACTURING METHOD THEREOF
    • JP2006352028A
    • 2006-12-28
    • JP2005179559
    • 2005-06-20
    • SUMITOMO ELECTRIC INDUSTRIES
    • HOSHINO TAKASHI
    • H01L29/47H01L29/872
    • PROBLEM TO BE SOLVED: To provide a rectifier element capable of improving breakdown voltage while reducing stationary loss, and a manufacturing method thereof. SOLUTION: The rectifier element 10 includes an n - semiconductor layer 2 consisting of a wide band gap semiconductor; Schottky electrodes 3 and 5 forming Schottky contact with the n - semiconductor layer 2; and a cathode electrode 4 capable of applying potential different from that of the Shottky electrode 5 and electrically connected to the n - semiconductor layer 2. The height of the Schottky barrier between the Schottky electrode 5 and the n - semiconductor layer 2 is higher than the height of a Schottky barrier between the Schottky electrode 3 and the n - semiconductor layer 2. The rectifier element 10 can select a state where the difference in potential between the Schottky electrodes 3, 5 and the cathode electrode 4 changes, thereby applying a current between the Schottky electrode 5 and the cathode electrode 4 and a state where the n - semiconductor layer 2 between the Schottky electrode 5 and the cathode electrode 4 is made into a depletion layer to disconnect a current path. COPYRIGHT: (C)2007,JPO&INPIT
    • 54. 发明专利
    • FIELD EFFECT TRANSISTOR
    • JP2006351794A
    • 2006-12-28
    • JP2005175394
    • 2005-06-15
    • SUMITOMO ELECTRIC INDUSTRIES
    • TANABE TATSUYAKIYAMA MAKOTO
    • H01L21/338H01L29/778H01L29/812
    • PROBLEM TO BE SOLVED: To provide a field effect transistor having a structure capable of utilizing a field plate effect. SOLUTION: A conductive gallium nitride substrate 13 comprises a first region 13c having first dislocation density, and a second region 13d having second dislocation density smaller than the first dislocation density. A gate electrode 17 is provided on a second part 15d of a gallium nitride base semiconductor region 15. A drain electrode 19 is provided on the second part 15d of the semiconductor region 15. A source electrode 21 is provided on the semiconductor region 15, and connected to the second part 15d of the semiconductor region 15. The dislocation density of the first part 15c of the semiconductor region 15 is larger than that of the second part 15d of the gallium nitride base semiconductor region 15. The conductivity of the first part 15c of the semiconductor region 15 is larger than that of the second part 15d of the semiconductor region 15. The source electrode 21 is connected to the first part 15c of the semiconductor region 15. COPYRIGHT: (C)2007,JPO&INPIT
    • 58. 发明专利
    • CELL STACK OF ELECTROLYTE CIRCULATION TYPE BATTERY
    • JP2006351345A
    • 2006-12-28
    • JP2005175773
    • 2005-06-15
    • SUMITOMO ELECTRIC INDUSTRIESKANSAI ELECTRIC POWER CO
    • HANADA FUMITERU
    • H01M8/02H01M8/18H01M8/24
    • PROBLEM TO BE SOLVED: To provide a cell stack of an electrolyte circulation type battery surely preventing contact of a terminal electrode being connected to the cell stack to an electrolyte and preventing loss of input/output function of electric power. SOLUTION: The cell stack 1 is formed by stacking a plurality of cells each comprising a positive electrode 3, a separator 4, and a negative electrode 5 arranged between bipolar plates 21, and has a plate-shaped terminal electrode 6 connected to a positive electrode 3 or a negative electrode 5 and inputting or outputting electricity. A terminal electrode protection part 10 is formed by covering the whole part excluding a part being drawn out to the outside of the cell stack in the terminal electrode 6. A fixing member 7 covering the outer circumferential edge part and one surface through the terminal electrode protection part 10 and fixing the terminal electrode 6 is installed. The terminal electrode 6 is connected to the positive electrode or the negative electrode through the terminal electrode protection part 10. The outer circumferential edge part on the surface on the connection side with the positive/negative electrodes of the terminal electrode protection part 10 is bonded to the fixing member 7. COPYRIGHT: (C)2007,JPO&INPIT