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41. 实用新型

JPH0266016U 失效
公开(公告)号：JPH0266016U
公开(公告)日：1990-05-18
申请号：JP14651388
申请日：1988-11-09
IPC分类号： H03F1/48 , H03F3/50

42. 发明专利

JPH02126709A VOLTAGE/CURRENT CONVERTER OF WIDE-BAND SINGLE END AND GAIN CONTROL CIRCUIT 失效
公开(公告)号：JPH02126709A
公开(公告)日：1990-05-15
申请号：JP27191288
申请日：1988-10-27
申请人： PHILIPS NV
发明人： ROBAATO GODOFURII MEIAA
IPC分类号： H03F1/48 , G05F1/56 , G05F3/22 , H03F1/30 , H03F3/343 , H03F3/347 , H03G1/04 , H03G3/02
摘要： PURPOSE: To supply a transmission function to an amplifier regardless of a bias level used for the amplifier by obtaining an output signal not as the function of a bias signal or the function of a copied bias signal but as the function of an input signal. CONSTITUTION: Currents from a gain control circuit 17 are added to output currents from a luminance amplifier 15c, amplified by an output amplifier 19, and a power transistor Tr 19a is driven. The Tr 19a supplies output currents IOUT to the emitter of a power Tr2. The minimum DC current value for an input signal IOUT is generated, and the power Tr2 is prevented from being switched to OFF, and the turn-on delay of the power Tr2 is eliminated. The signal of an SHUT signal is added for disabling the amplifier 19, and substantially blanking a CRT screen. When the amplifier 19 is disabled by the SHUT signal, an IDLE current source 6 generates the minimum DC currents for the IOUT.

43. 发明专利

JPH02104007A INPUT CIRCUIT FOR RADIO FREQUENCY AMPLIFIER 失效
公开(公告)号：JPH02104007A
公开(公告)日：1990-04-17
申请号：JP18619489
申请日：1989-07-20
申请人： TELEFUNKEN ELECTRONIC GMBH , THOMSON BRANDT GMBH
发明人： RORUFU BEEME , GIYUNTAA GURAIMU
IPC分类号： H03F1/26 , H03F1/48 , H03F1/56 , H03F3/19 , H03F3/26 , H03F3/343
摘要： PURPOSE: To obtain an input circuit for a high frequency amplifier where reaction of the output to the input is very small by setting and adjusting electronically an input resistor whose resistance depends of a flowing current thereto. CONSTITUTION: A signal current Is is used to generate a voltage drop R1.Is being a difference of two base voltages of transistors(TRs) T1, T2 at the same time. A current sum I3+I4+Is flows to the TRs T1, T2. The sum current is divided between the TRs T1, T2 and fed to TRs T3, T4 and the signal current Is is again subtracted at the TR T1. Let Ig be I3 and I4, then an input resistor is easily produced through the adjustment or control of the Ig'.

44. 发明专利

JPH0284803A BROAD-BAND AMPLIFIER CIRCUIT 失效
公开(公告)号：JPH0284803A
公开(公告)日：1990-03-26
申请号：JP31508687
申请日：1987-12-14
申请人： SONY CORP
发明人： KARISE SHIGERU
IPC分类号： H04N5/14 , G11B5/027 , H03F1/08 , H03F1/48 , H04N5/93
摘要： PURPOSE:To relax dispersion in a feedback capacitor due to the dispersion in a current on individual IC substrate without attenuating a high-pass signal by using a semiconductor coupling capacitor, as the feedback capacitor of a broad-band amplifier circuit, and setting input capacitance by appearance to the amplifier circuit so as to be decreased by an out-fitting resistor. CONSTITUTION:A transistor TRQ1 at an initial stage to which a base current is supplied from bias resistors r1 and r2 is provided at the IC substrate, and a current source S1 is cascade-connected to the emitter of the TRQ1 and a base-grounded TRQ2 to the col-lector side. Also, a TRQ3 that is the output of an emitter follower is connected to the load resistor RL with a current source S2. Also, a TRQ4 for voltage-current conversion which applies capacitive positive feedback is provided, and a collector resistor R1 and an emitter resistor RE are connected to the TRQ4, and the coupling capacitor Cj of a diode on which collector output is reverse biased is positive-fed back to the TRQ1 as the feedback capacitor, and the input capacitance by appearance to the amplifier circuit can be decreased by adjusting the out-fitting resistor R2.

45. 发明专利

JPH0247905A UNBALANCE/BALANCE CONVERSION CIRCUIT 失效
公开(公告)号：JPH0247905A
公开(公告)日：1990-02-16
申请号：JP19942588
申请日：1988-08-09
申请人： NEC CORP
发明人： SAITO YASUO
IPC分类号： H03F3/345 , H03F1/48 , H03F3/45
摘要： PURPOSE:To improve the frequency band of an input signal to an unbalance/ balance conversion circuit remarkably by connecting an inductance element between a reference input of a differential amplifier circuit and ground. CONSTITUTION:An inductance element L1 is connected between a gate of a differential operation FETQ2 and ground in the unbalance/balance conversion circuit 1 and its output is given to a level shift circuit 2, from which outputs OUT, the inverse of OUT whose amplitude is the same but whose polarity is opposite to each other are obtained. That is, a resistor R3 is used to apply a gate bias of a differential operation FETQ1 and to attain input matching and the element L1 is provided to apply a gate bias of the FETQ2 and to improve the band characteristic thereof. The impedance of an imaginary grounding point A up to the resonance frequency is reduced by the series resonance between the element L1 and the gate-source capacitance of the FETQ2 to prevent the gain reduction thereby improving the frequency band of the input signal considerably.

46. 发明专利

JPH01317006A WIDE BAND AMPLIFIER 失效
公开(公告)号：JPH01317006A
公开(公告)日：1989-12-21
申请号：JP10361789
申请日：1989-04-25
申请人： MOTOROLA INC
发明人： UIRIAMU ERITSUKU MEIN
IPC分类号： H03F1/48 , H03F3/34 , H03F3/343 , H03F3/347
摘要： PURPOSE: To provide a wide-band amplifier capable of obtain wide-band characteristics in a high-frequency region and of being easily made into integrated circuit by utilizing piled current mirrors for differentially amplifying impressed input current. CONSTITUTION: This amplifier is composed of 1st and 2nd current mirrors 18 and 20 at least having an input, an output and a common terminal respectively and a current source 24 for supplying a current to the input 12 of the 1st current mirror 18. The input 12 and the common terminal 14 of the 1st current mirror are connected to the input of the amplifier for receiving a differential input signal, and its output is connected to a power source conductor 26. The input of the 2nd current mirror 20 is connected to the common terminal 14 of the 1st current mirror 18, the output of the 2nd current mirror 20 is connected to the output of the amplifier, and its common terminal is connected to a 2nd power conductor 28. Thus, the amplifier having wide-band characteristics in the high-frequency region and suitable for being produced in the form of an integrated circuit can be obtained.

47. 发明专利

JPH01190107A BOARD BAND AMPLIFIER CIRCUIT 失效
公开(公告)号：JPH01190107A
公开(公告)日：1989-07-31
申请号：JP1353988
申请日：1988-01-26
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： KIKUCHI HIROYUKI , OBARA MAMORU , ISHIHARA NOBORU
IPC分类号： H03F1/34 , H03F1/48
摘要： PURPOSE:To reduce a load capacitance of a common source circuit by inserting a source follower circuit between common source circuits in a broad band amplifier circuit where common source circuits each comprising an MESFET are connected in cascade. CONSTITUTION:The band characteristic of a common source amplifier circuit is affected largely by the load capacitance caused at the drain side of a Schottky barrier gate FET (MESFET). With the gate width of the MESFET of a 1st stage selected large, the band characteristic is limited by the common source amplifier circuit of the 1st stage. In order to suppress the deterioration in the band characteristic, a source follower circuit 191 is inserted between the output of the common source amplifier circuit and the input of the common source amplifier circuit, the gate width of the MESFET constituting the source follower is reduced to decrease the load capacity of the common source amplifier circuit of the 1st stage. Moreover, the source follower circuit 192 is inserted between 2nd and 3rd stages of common source amplifier circuits to decrease the load capacitance.

48. 发明专利

JPH0135533B2 失效
公开(公告)号：JPH0135533B2
公开(公告)日：1989-07-26
申请号：JP8538079
申请日：1979-07-05
申请人： NIPPON DENKI KEIKI KENTEISHO
发明人： IGARASHI AKIRA
IPC分类号： H03F3/50 , H03F1/48 , H03F3/34 , H03F3/343

49. 发明专利

JPH01152805A AMPLIFIER 失效
公开(公告)号：JPH01152805A
公开(公告)日：1989-06-15
申请号：JP26732388
申请日：1988-10-25
申请人： KONINKL PHILIPS ELECTRONICS NV
发明人： BLANKEN PIETER GERRIT
IPC分类号： H03F1/34 , H03F1/08 , H03F1/48
摘要： PURPOSE: To provide a large band width by serially connecting a mutual admittance circuit and a mutual impedance amplifier provided with a current negative feedback circuit and turning the coefficients of respective transmission functions to specified values. CONSTITUTION: For this amplification device, the mutual impedance amplifier 211 is serially connected to the mutual admittance circuit 305 and arranged. The mutual impedance amplifier 211 is negatively fed back by the current negative feedback circuit provided with the parallel circuit of a resistor rf and a capacitor Cf . The coefficient of the transmission function of the mutual impedance amplifier presents primary reduction above a first frequency F1 and presents secondary reduction above a second frequency F2 , and for the current negative feedback circuit, the reciprocal of the coefficient of the transmission function of the negative feedback impedance below F2 is smaller than the coefficient of the transmission function of the mutual impedance amplifier and the coefficient of the transmission function of the negative feedback impedance presents the primary reduction above a third frequency F3 . Thus, the coefficient of the transmission function of a negative feedback mutual impedance amplifier presents the primary reduction above a forth frequency almost equal to F3 and presents the secondary reduction above a fifth frequency F5 above F2 .

50. 发明专利

JPH01114203A PEAKING CIRCUIT 失效
公开(公告)号：JPH01114203A
公开(公告)日：1989-05-02
申请号：JP27012387
申请日：1987-10-28
申请人： HITACHI LTD
发明人： SAKUTA TAKESHI , MIZUKAMI HIROYUKI , SUGITA HAJIME , AKITAKE ISAO
IPC分类号： H03F1/48
摘要： PURPOSE:To obtain a desired frequency characteristic independently of the dispersion of a forming condition by using one junction capacitance, at least, between the gate and the drain and between the gate and the source of a transistor(TR) for the load capacity of an amplifier. CONSTITUTION:The source or the drain of a second TR 21, formed by the same forming condition as a first TR, or both the source and the drain of it are connected to the source of the first TR1 in parallel with a first resistor 2, and the gate of the second TR21 is connected to a second power source. Thus, the rates of the dispersion of the TRs to be formed on the same chip in close vicinity to each other comes equal to each other, and the desired frequency characteristic can be obtained not accompanied with the variation of a relation between the cut-off frequency of a circuit and the characteristic frequency of a peaking circuit.

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