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41. 发明专利

JP2013254554A MAGNETIC RECORDING HEAD AND MAGNETIC RECORDING DEVICE PROVIDED WITH THE SAME 审中-公开
公开(公告)号：JP2013254554A
公开(公告)日：2013-12-19
申请号：JP2013149669
申请日：2013-07-18
申请人： TOSHIBA CORP
发明人： KOI KATSUHIKO , SHIMIZU MARIKO , MURAKAMI SHUICHI , YAMADA KENICHIRO
IPC分类号： G11B5/31 , G11B5/02 , H01F10/14 , H01F10/16 , H01F10/32 , H01L29/82 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic recording head that can generate a large high-frequency magnetic field while maintaining a high frequency, and further to provide a magnetic recording device provided therewith.SOLUTION: A magnetic recording head of a magnetic recording device comprises: a main magnetic pole 66 for applying a recording magnetic field; a trailing shield 68 opposite to the main magnetic pole 66 with a write gap WG interposed therebetween; and a spin torque oscillator 74 that is provided between the main magnetic pole 66 and the trailing shield 68 and generates a high-frequency magnetic field by causing a current to flow therethrough. The spin torque oscillator 74 has a spin injection layer 74b, an intermediate layer 74c and an oscillation layer 74d. The oscillation layer 74d is formed by repeatedly laminating laminates of body-centered cubic crystal metal magnetic layers and metal magnetic layers containing Co twice or more. A film thickness of each body-centered cubic crystal metal magnetic layer and a film thickness of each metal magnetic layer containing Co are individually greater than 0.2nm and not greater than 3nm. An anisotropic magnetic field in a direction perpendicular to a film surface of the oscillation layer 74d is greater than a value obtained by subtracting a gap magnetic field from a demagnetizing field perpendicular to the film surface of the oscillation layer 74d and is less than the demagnetizing field.

42. 发明专利

JP2013175680A Spin injection magnetization reversal element and magnetoresistive random access memory 有权
标题翻译：旋转注射放大反转元件和磁阻随机存取存储器
公开(公告)号：JP2013175680A
公开(公告)日：2013-09-05
申请号：JP2012040639
申请日：2012-02-27
申请人： Nippon Hoso Kyokai , 日本放送協会
发明人： AOSHIMA KENICHI , MACHIDA KENJI , KUGA ATSUSHI , KIKUCHI HIROSHI , SHIMIZU NAOKI
IPC分类号： H01L21/8246 , G11C11/15 , H01F10/32 , H01L27/105 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： G11C11/16
摘要： PROBLEM TO BE SOLVED: To provide a spin injection magnetization reversal element capable of freely reversing magnetization to both directions of parallel and antiparallel in cell unit and miniaturizing a memory cell of a magnetoresistive random access memory.SOLUTION: A spin injection magnetization reversal element 1 is provided with a magnetization fixed layer 11 and a magnetization free layer 13 provided with a ferrimagnetic material laminated by sandwiching an intermediate layer 12, wherein by changing a current amount so as to be supplied in one direction, a magnetization direction of the magnetization free layer 13 is changed according to the current amount. This kind of spin injection magnetization reversal element 1 can be made to be a memory cell with a diode 2 being as an element for selecting an element.
摘要翻译：要解决的问题：提供一种能够在单元单元中以平行和反平行的方向自由地反转磁化的自旋注入磁化反转元件，并且使磁阻随机存取存储器的存储单元小型化。解决方案：自旋注入磁化反转元件1是设置有磁化固定层11和具有通过夹持中间层12层压的铁氧体材料的磁化自由层13，其中通过改变电流量以沿一个方向供给磁化自由层13的磁化方向根据当前数量而改变。这种自旋注入磁化反转元件1可以制成作为用于选择元件的元件的二极管2的存储单元。

43. 发明专利

JP2013149857A Magnetoresistance effect element and magnetic memory 有权
标题翻译：磁阻效应元件和磁记忆
公开(公告)号：JP2013149857A
公开(公告)日：2013-08-01
申请号：JP2012010359
申请日：2012-01-20
申请人： Renesas Electronics Corp , ルネサスエレクトロニクス株式会社
发明人： KARIYADA HIDETSUGU , SUEMITSU KATSUMI
IPC分类号： H01L21/8246 , H01F10/16 , H01F10/30 , H01F10/32 , H01L27/105 , H01L29/82 , H01L43/08
CPC分类号： H01L43/02 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To suppress reduction of an MR ratio caused by a high temperature heat processing in a magnetoresistance effect element using a vertical magnetization film.SOLUTION: The magnetoresistance effect element comprises: a data storage layer; a data reference layer; and a MgO film sandwiched between the data storage layer and the data reference layer. The data storage layer comprises: a CoFeB film which contacts MgO film; a vertical magnetization film; and a Ta film sandwiched between the CoFeB film and the vertical magnetization film. The CoFeB film and the vertical magnetization film are magnetically coupled via the Ta film.
摘要翻译：要解决的问题：为了抑制由使用垂直磁化膜的磁阻效应元件中的高温热处理引起的MR比的降低。解决方案：磁阻效应元件包括：数据存储层; 数据参考层; 以及夹在数据存储层和数据参考层之间的MgO膜。数据存储层包括：与MgO膜接触的CoFeB膜; 垂直磁化膜; 以及夹在CoFeB膜和垂直磁化膜之间的Ta膜。 CoFeB膜和垂直磁化膜通过Ta膜磁耦合。

44. 发明专利

JP2013120915A Spin-wave waveguide and spin-wave operation circuit 有权
标题翻译：旋转波形和旋转波形操作电路
公开(公告)号：JP2013120915A
公开(公告)日：2013-06-17
申请号：JP2011269558
申请日：2011-12-09
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： ITOU AKITOMO , YAMADA MASATAKA , OGAWA SUSUMU
IPC分类号： H01L29/82 , H01F10/16 , H01F10/32 , H01L43/08
CPC分类号： H01P3/165 , G11C11/16 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3286 , H01L27/22 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide: an ultra-low power consumption spin-wave waveguide compatible with an existing synchronous processing unit; and an operation circuit using the spin-wave waveguide.SOLUTION: A spin-wave waveguide is configured to form a part of a wire-shaped ferromagnetic thin film having a large thickness at one end of the ferromagnetic thin film, and alternately form a part having a small thickness and a part having a large thickness at least one cycle or more on the same plane. A part of the ferromagnetic thin film having a small thickness is formed at the other end of the wire-shaped ferromagnetic thin film. An insulating film and an electrode film are laminated one upon another in this order at the part of the film having the small thickness. A magnetic anisotropy of the part of the film having the large thickness is parallel to the film surface. A magnetic anisotropy of the part of the film having the large thickness is perpendicular to the film surface. A spin-wave operation circuit uses the spin-wave waveguide.
摘要翻译：要解决的问题：提供：与现有的同步处理单元兼容的超低功耗自旋波导; 以及使用该自旋波导的运算电路。解决方案：自旋波导被配置为在铁磁薄膜的一端形成具有大厚度的线状铁磁薄膜的一部分，并且交替地形成具有小厚度的部分和具有在同一平面上具有至少一个循环或更大的厚度的厚度。在线状铁磁性薄膜的另一端形成厚度较小的铁磁性薄膜的一部分。绝缘膜和电极膜依次层叠在厚度薄的部分。具有大厚度的膜的部分的磁各向异性平行于膜表面。具有大厚度的膜的一部分的磁各向异性垂直于膜表面。自旋波运算电路使用自旋波导。版权所有（C）2013，JPO＆INPIT

46. 发明专利

JP2013115399A Storage element, storage device 审中-公开
标题翻译：存储元件，存储设备
公开(公告)号：JP2013115399A
公开(公告)日：2013-06-10
申请号：JP2011263287
申请日：2011-12-01
申请人： Sony Corp , ソニー株式会社
发明人： YAMANE KAZUAKI , HOSOMI MASAKATSU , OMORI HIROYUKI , BESSHO KAZUHIRO , HIGO YUTAKA , ASAYAMA TETSUYA , UCHIDA HIROYUKI
IPC分类号： H01L21/8246 , H01F10/16 , H01F10/26 , H01F10/32 , H01L27/105 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： G11C11/161 , G11C7/04
摘要： PROBLEM TO BE SOLVED: To provide a storage element having excellent characteristic balance by ensuring thermal stability.SOLUTION: The storage element includes a layer structure having a storage layer which has magnetization perpendicular to the film surface and the orientation of magnetization that changes corresponding to the information, a magnetization fixed layer having magnetization perpendicular to a film surface becoming a reference of the information stored in the storage layer, and an intermediate layer of a non-magnetic material provided between the storage layer and the magnetization fixed layer. When current is fed in the lamination direction of the layer structure, the orientation of the storage layer changes thus recording the information in the storage layer. A lamination structure having a Co-Fe-B magnetic layer, and at least one non-magnetic layer, where an oxide layer, the Co-Fe-B magnetic layer and the non-magnetic layer are laminated sequentially, is formed in the storage layer.
摘要翻译：要解决的问题：通过确保热稳定性来提供具有优异特性平衡的存储元件。解决方案：存储元件包括具有垂直于膜表面的磁化的存储层和对应于信息变化的磁化取向的层结构，具有垂直于膜表面的磁化的磁化固定层变为参考存储在存储层中的信息以及设置在存储层和磁化固定层之间的非磁性材料的中间层。当在层结构的层叠方向上馈送电流时，存储层的取向改变，从而将信息记录在存储层中。具有Co-Fe-B磁性层和至少一个非磁性层的叠层结构，其中氧化物层，Co-Fe-B磁性层和非磁性层依次层叠，形成在存储器层。版权所有（C）2013，JPO＆INPIT

47. 发明专利

JP2013115300A Memory element and memory device 有权
标题翻译：存储元件和存储器件
公开(公告)号：JP2013115300A
公开(公告)日：2013-06-10
申请号：JP2011261521
申请日：2011-11-30
申请人： Sony Corp , ソニー株式会社
发明人： HIGO YUTAKA , HOSOMI MASAKATSU , OMORI HIROYUKI , BESSHO KAZUHIRO , ASAYAMA TETSUYA , YAMANE KAZUAKI , UCHIDA HIROYUKI
IPC分类号： H01L21/8246 , G01R33/02 , G11B5/39 , H01F10/32 , H01L27/105 , H01L29/82 , H01L43/08
CPC分类号： G11C11/161 , Y10S977/933 , Y10S977/935
摘要： PROBLEM TO BE SOLVED: To provide a memory element and a memory device which can perform a writing operation in a short time without causing writing error.SOLUTION: A memory element 3 is constructed to include a layer structure having: a memory layer 14 in which a magnetization direction is changed according to information; a magnetization fixed layer 12 in which a magnetization direction is fixed; an intermediate layer 13 made of nonmagnetic material which is disposed between the memory layer 14 and the magnetization fixed layer 12; and a perpendicular magnetic anisotropy induction layer 15. In the memory layer 14, a first ferromagnetic layer 14a, a first coupling layer 14b, a second ferromagnetic layer 14c, a second coupling layer 14d and a third ferromagnetic layer 14e are laminated in this order. The first ferromagnetic layer 14a is in contact with the intermediate layer 13, the third ferromagnetic layer 14e is in contact with the perpendicular magnetic anisotropy induction layer 15, and each magnetization direction in the ferromagnetic layers 14a, 14c, 14e neighboring via the coupling layers 14b, 14d is inclined from a direction perpendicular to a film surface.
摘要翻译：要解决的问题：提供可以在短时间内执行写入操作而不引起写入错误的存储器元件和存储器件。解决方案：存储元件3被构造为包括具有以下信息的层结构的层结构：存储层14，其中磁化方向根据信息而改变; 磁化方向固定的磁化固定层12; 设置在存储层14和磁化固定层12之间的由非磁性材料制成的中间层13; 和垂直磁各向异性感应层15.在存储层14中，依次层叠第一铁磁层14a，第一耦合层14b，第二铁磁层14c，第二耦合层14d和第三铁磁层14e。第一铁磁层14a与中间层13接触，第三铁磁层14e与垂直磁各向异性感应层15接触，并且通过耦合层14b相邻的铁磁层14a，14c，14e中的每个磁化方向，14d从垂直于膜表面的方向倾斜。版权所有（C）2013，JPO＆INPIT

48. 发明专利

JP5181388B2 Ferromagnetic layered structure and a method of manufacturing the same 有权
公开(公告)号：JP5181388B2
公开(公告)日：2013-04-10
申请号：JP2008089702
申请日：2008-03-31
申请人：秋田県
发明人：淑男鈴木
IPC分类号： H01F10/32 , B82Y10/00 , B82Y20/00 , B82Y25/00 , B82Y40/00 , C23C14/06 , H01F10/16 , H01F10/28 , H01F10/30 , H01F41/18 , H01F41/20 , H01L21/316 , H01L29/82 , H01L33/00 , H01L33/24 , H01L33/30

50. 发明专利

JP5152734B2 Magnetic multilayer film 有权
公开(公告)号：JP5152734B2
公开(公告)日：2013-02-27
申请号：JP2011226908
申请日：2011-10-14
申请人：独立行政法人科学技術振興機構 , 独立行政法人産業技術総合研究所
发明人：新治湯浅
IPC分类号： H01L43/08 , G11C11/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/10 , H01L43/12
CPC分类号： H01L43/10 , B82Y10/00 , B82Y25/00 , G11C11/15 , G11C11/16 , G11C11/161 , H01F10/132 , H01F10/3254 , H01L27/11507 , H01L27/22 , H01L27/222 , H01L27/228 , H01L28/55 , H01L43/02 , H01L43/08 , H01L43/12

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