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41. 发明专利

JP2013535389A Polycrystalline aluminum nitride material and a method of manufacturing the same 有权
公开(公告)号：JP2013535389A
公开(公告)日：2013-09-12
申请号：JP2013520796
申请日：2011-07-19
申请人：ヘクサテック,インコーポレイテッド
发明人：ムーディー，バクスター , ダルマウ，ラファエル , ヘンシャル，デイビッド , シュレッサー，ラウル
IPC分类号： C04B35/581 , H01L21/304 , H01L23/12 , H05K1/03
CPC分类号： C01B21/072 , C04B35/581 , C04B35/64 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/5481 , C04B2235/604 , C04B2235/656 , C04B2235/6562 , C04B2235/6565 , C04B2235/6567 , C04B2235/658 , C04B2235/6581 , C04B2235/6586 , C04B2235/66 , C04B2235/72 , C04B2235/77 , C04B2235/94 , C04B2235/95 , C04B2235/963 , Y10T428/24355
摘要： Methods of preparing polycrystalline aluminum nitride materials that have high density, high purity, and favorable surface morphology are disclosed. The methods generally comprises pressing aluminum nitride powders to form a slug, sintering the slug to form a sintered, polycrystalline aluminum nitride boule, and optionally shaping the boule and/or polishing at least a portion of the boule to provide a finished substrate. The sintered, polycrystalline aluminum nitride materials beneficially are prepared without the use of any sintering aid or binder, and the formed materials exhibit excellent density, AlN purity, and surface morphology.

43. 发明专利

JP5184723B1 Production method of ultraviolet light-emitting phosphor material 有权
公开(公告)号：JP5184723B1
公开(公告)日：2013-04-17
申请号：JP2012550248
申请日：2012-07-17
申请人：パナソニック株式会社
发明人：修井上 , 洋浅野 , 裕介福井
IPC分类号： C09K11/54 , C09K11/08
CPC分类号： C09K11/703 , C04B35/453 , C04B2235/3217 , C04B2235/3286 , C04B2235/447 , C04B2235/652 , C04B2235/6582 , C04B2235/6586 , C04B2235/72 , C04B2235/9646 , C09K11/623 , C09K11/642 , C09K11/706
摘要：本発明は、主成分として亜鉛と酸素、ならびに副成分としてアルミニウム、ガリウム、およびインジウムからなる群より選ばれる少なくとも１種を含む組成物を、酸化亜鉛、酸化ガリウム、および酸化リンからなる群より選ばれる少なくとも２種の物質が共存する非酸化性雰囲気下で、熱処理する工程を有する紫外発光蛍光体材料の製造方法である。
【選択図】図２

44. 发明专利

JP2011521175A Method and apparatus for producing a dispersion-hardened material comprising a carbide nanoparticles 有权
公开(公告)号：JP2011521175A
公开(公告)日：2011-07-21
申请号：JP2011500056
申请日：2009-01-20
申请人：フェデラル−モーグルブルシャイトゲゼルシャフトミットベシュレンクテルハフツング
发明人：ケネディ，マーカス , ツィンナボールト，ミヒャエル , マッツ，マルク−マヌエル
IPC分类号： F16J9/26 , B82B3/00 , C01B31/30 , C01B31/34 , C01B31/36 , C23C4/10 , C23C4/12
CPC分类号： C04B35/565 , C01B32/914 , C01B32/921 , C01B32/949 , C01B32/956 , C04B35/56 , C04B35/5607 , C04B35/5611 , C04B35/5626 , C04B2235/6586 , C23C4/10 , C23C4/129 , F16J9/26 , Y10T29/49274 , Y10T428/25
摘要： A method for producing a dispersion-hardened object which contains carbide nanoparticles comprises producing an object by means of a thermal spraying method, wherein downstream of the combustion chamber, the gas flow is supplied by means of a carrier gas with at least one precursor which reacts in the gas flow to form a carbide, or carbide nanoparticles are supplied via an external nanoparticle generator which is subject to a thermal load. It allows the production of a dispersion-hardened object such as, for example, a component for an internal combustion engine, for example a piston ring. The method is carried out by means of a thermal spraying device which, downstream of the combustion chamber, besides at least one line for supplying a thermal spray powder, further comprises at least one line for supplying a precursor by means of a carrier gas.

45. 发明专利

JP2011132593A Oxide evaporation material, transparent conducting film, and solar cell 有权
标题翻译：氧化物蒸发材料，透明导电膜和太阳能电池
公开(公告)号：JP2011132593A
公开(公告)日：2011-07-07
申请号：JP2010016289
申请日：2010-01-28
申请人： Sumitomo Metal Mining Co Ltd , 住友金属鉱山株式会社
发明人： ABE TAKAYUKI , WAKE RIICHIRO , KUWAHARA MASAKAZU , SOGABE KENTARO , OSHIRO AZUSA , YADA HISATAKA
IPC分类号： C23C14/24 , C04B35/00 , C23C14/08 , H01B5/14
CPC分类号： H01B1/08 , C04B35/01 , C04B2235/3229 , C04B2235/3256 , C04B2235/3258 , C04B2235/3286 , C04B2235/3293 , C04B2235/5436 , C04B2235/5445 , C04B2235/608 , C04B2235/6562 , C04B2235/6565 , C04B2235/6567 , C04B2235/658 , C04B2235/6585 , C04B2235/6586 , C04B2235/77 , C04B2235/786 , C04B2235/9646 , C23C14/08 , C23C14/3414 , C23C30/005 , H01L31/022466 , H01L31/022475 , H01L31/0749 , H01L31/1884 , Y02E10/541
摘要： PROBLEM TO BE SOLVED: To provide an oxide evaporation material in which a high-refractive-index transparent film of low resistance and high optical transmittance in the visible to near-infrared region can be consistently manufactured even when the amount of oxygen to be introduced during the film deposition is small, a high-refractive-index transparent film to be manufactured by using the oxide evaporation material, and a solar cell in which the conductive transparent film is used for an electrode.
SOLUTION: The oxide evaporation material includes a sintered body containing indium oxide as a main component thereof and cerium with a Ce/In atomic ratio of 0.001 to 0.110. The L* value in the CIE1976 color space is 62 to 95. The oxide evaporation material with the L* value of 62 to 95 has an optimal oxygen amount. Accordingly, even when a small amount of oxygen gas is introduced into a film deposition vacuum chamber, a transparent conductive film having low resistance and high transmittance in the visible to near-infrared region is formed by vacuum deposition methods. Since the amount of the oxygen gas introduced is small, the difference in composition between the film and the evaporation material is made small. This reduces the variations in composition and characteristics among films formed in large quantities.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种氧化物蒸发材料，其中即使在氧气到氧化物的量为氧时，可以一致地制造可见光到近红外区域的低电阻和高透光率的高折射率透明膜在膜沉积期间引入的薄膜，通过使用氧化物蒸发材料制造的高折射率透明膜，以及其中导电透明膜用于电极的太阳能电池。解决方案：氧化物蒸发材料包括以氧化铟为主要成分的烧结体和Ce / In原子比为0.001至0.110的铈。 CIE1976色空间的L *值为62〜95.L *值为62〜95的氧化物蒸发材料具有最佳的氧量。因此，即使在成膜真空室中引入少量氧气的情况下，也可以通过真空蒸镀法形成在可见光到近红外区域具有低电阻，高透射率的透明导电膜。由于引入的氧气的量少，所以膜和蒸发材料之间的组成差异变小。这减少了大量形成的膜之间的组成和特性的变化。版权所有（C）2011，JPO＆INPIT

46. 发明专利

JP2011132556A Oxide evaporation material and high-refractive-index transparent film 有权
$Oxide evaporation material and high-refractive-index transparent film$
标题翻译：氧化物蒸发材料和高折射率透明膜
公开(公告)号：JP2011132556A
公开(公告)日：2011-07-07
申请号：JP2009290200
申请日：2009-12-22
申请人： Sumitomo Metal Mining Co Ltd , 住友金属鉱山株式会社
发明人： ABE TAKAYUKI , WAKE RIICHIRO , KUWAHARA MASAKAZU , MAENO YASUYUKI
IPC分类号： C23C14/24 , C04B35/00 , C23C14/08
CPC分类号： H01B1/08 , C04B35/01 , C04B35/6261 , C04B2235/3229 , C04B2235/3286 , C04B2235/5445 , C04B2235/6562 , C04B2235/6565 , C04B2235/6585 , C04B2235/6586 , C04B2235/77 , C04B2235/786 , C23C14/0015 , C23C14/08
摘要： PROBLEM TO BE SOLVED: To provide an oxide evaporation material in which a high-refractive-index transparent film of low resistance and high transmittance in the visible to near-infrared region can be consistently manufactured even when the amount of oxygen to be introduced during the film deposition is small, and a high-refractive-index transparent film to be manufactured by using the oxide evaporation material. SOLUTION: The oxide evaporation material mainly consists of indium oxide, and is constituted of a sintered body containing cerium with its Ce/In atomic ratio being >0.110 and ≤0.538, and the L* value in the CIE1976 color space is 62-95. The oxide evaporation material with the L* value of 62 to 95 has an optimal oxygen amount. Accordingly, even when a small amount of oxygen gas is introduced into a film deposition vacuum chamber, a high-refractive-index transparent film having the refractive index of 2.15 to 2.51 at a wavelength of 550 nm, a low resistance, and a high transmittance in the visible to near-infrared region is formed by vacuum deposition methods. Since the introduced oxygen gas amount is small, the difference in composition between the film and the evaporation material is made small, and the fluctuation in the film composition or characteristic during the mass production can be reduced. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种氧化物蒸发材料，其中即使当氧气的量将可以一致地制造其中可见光到近红外区域的低电阻和高透射率的高折射率透明膜在膜沉积期间引入的薄膜是通过使用氧化物蒸发材料制造的高折射率透明膜。解决方案：氧化物蒸发材料主要由氧化铟组成，由Ce / In原子比> 0.110和≤0.538的含铈的烧结体构成，CIE1976色空间的L *值为62 -95。 L *值为62〜95的氧化物蒸发材料具有最佳的氧量。因此，即使在薄膜沉积真空室中引入少量的氧气的情况下，在波长550nm下折射率为2.15〜2.51的高折射率透明膜，低电阻，高透射率在可见光到近红外区域通过真空沉积法形成。由于引入的氧气量少，所以膜和蒸发材料之间的组成差异变小，可以降低大量生产中的膜组成或特性的波动。版权所有（C）2011，JPO＆INPIT

47. 发明专利

JPWO2005093864A1 熱電変換素子及び熱電変換モジュール有权
公开(公告)号：JPWO2005093864A1
公开(公告)日：2008-02-14
申请号：JP2006511459
申请日：2005-03-22
申请人：独立行政法人産業技術総合研究所
发明人：敏行三原 , 敏行三原 , 舟橋　良次 , 良次舟橋 , 明渡　純 , 純明渡 , 創馬場 , 創馬場 , 祐史三上 , 祐史三上
IPC分类号： H01L35/22 , C03C17/23 , C04B35/00 , C04B35/01 , C04B35/453 , C04B35/495 , C04B35/50 , C04B35/622 , C23C14/08 , C23C14/34 , H01L35/32 , H01L35/34 , H02N11/00
CPC分类号： C04B35/01 , C03C17/23 , C03C2217/23 , C04B35/453 , C04B35/62218 , C04B2235/3201 , C04B2235/3203 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3232 , C04B2235/3239 , C04B2235/3241 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3262 , C04B2235/3272 , C04B2235/3275 , C04B2235/3277 , C04B2235/3279 , C04B2235/3281 , C04B2235/3284 , C04B2235/3286 , C04B2235/3291 , C04B2235/3296 , C04B2235/3298 , C04B2235/443 , C04B2235/6586 , C04B2235/762 , C04B2235/765 , C04B2235/768 , C04B2235/96 , C04B2235/9607 , C23C14/08 , C23C14/3414 , H01L35/22 , H01L35/32
摘要：本発明は、電気絶縁性基板上に形成されたp型熱電変換材料の薄膜とn型熱電変換材料の薄膜を電気的に接続してなる熱電変換素子であって、p型熱電変換材料及びn型熱電変換材料が、それぞれ、正のゼーベック係数を有する特定の複合酸化物と、負のゼーベック係数を有する特定の複合酸化物から選ばれたものであることを特徴とする熱電変換素子、並びに該熱電変換素子を用いた熱電変換モジュール及び熱電変換方法を提供するものである。本発明の熱電変換素子は、電気絶縁性基板上に、p型熱電変換材料とn型熱電変換材料が、薄膜状に形成されたものであり、各種の任意の形状の基板上に熱電変換素子を形成できることから、多様な形状の熱電変換素子とすることができる。

48. 发明专利

JP2007537128A Heat treatment of silicon carbide products 审中-公开
公开(公告)号：JP2007537128A
公开(公告)日：2007-12-20
申请号：JP2007513431
申请日：2005-05-13
申请人：ポコグラファイト、インコーポレイテッド
发明人：ラシャド、アブァゲラ、エイチ．
IPC分类号： C04B35/565 , C04B38/00 , C04B41/53 , C04B41/91 , H01L21/3065
CPC分类号： C04B41/5392 , C04B35/565 , C04B35/64 , C04B41/009 , C04B41/91 , C04B2235/658 , C04B2235/6583 , C04B2235/6586 , C04B2235/663 , C04B2235/721
摘要：残存する量の遊離炭素及びグラファイトを除去するために炭化ケイ素物を熱処理するための方法を提供する。この方法は、炭化ケイ素物を供給すること及び所定の時間、所定の温度範囲内で炭化ケイ素物を加熱することを含む。加熱は、酸化試薬の存在下で行われる。結果として、一酸化炭素及び二酸化炭素などの気体の生産物が、残存する遊離炭素及びグラファイトを除去するために遊離炭素及びグラファイトを酸化することによって形成された副生産物を含むものとして遊離される。気体は、炭化ケイ素物の加熱の結果として生産される。粒子は、炭化ケイ素物上に酸化被膜を形成させることなく炭化ケイ素物から除去される。結果として、炭化ケイ素物は、実質的に炭素及びグラファイトの封入体がない状態になる。

49. 发明专利

JP2007150350A Piezoelectric structure element 有权
标题翻译：压电结构元件
公开(公告)号：JP2007150350A
公开(公告)日：2007-06-14
申请号：JP2007030992
申请日：2007-02-09
申请人： Epcos Ag , エプコスアクチエンゲゼルシャフトEpcos Ag
发明人： FELTZ ADALBERT , GANSBERGER SIGRID , FLORIAN HEINZ , KASTL HARALD
IPC分类号： C04B35/64 , H01L41/083 , C04B35/638 , C04B37/02 , H01L41/047 , H01L41/187 , H01L41/273
CPC分类号： H01L41/273 , C04B35/493 , C04B35/638 , C04B37/021 , C04B2235/3224 , C04B2235/3227 , C04B2235/3281 , C04B2235/5445 , C04B2235/6562 , C04B2235/6567 , C04B2235/6582 , C04B2235/6584 , C04B2235/6586 , C04B2235/6588 , C04B2235/721 , C04B2235/768 , C04B2235/77 , C04B2235/785 , C04B2235/786 , C04B2237/346 , C04B2237/348 , C04B2237/407 , H01L41/0471 , H01L41/0477 , H01L41/1876 , Y10T29/42 , Y10T29/435 , Y10T29/49005 , Y10T29/49117 , Y10T428/12507 , Y10T428/24926 , Y10T428/252 , Y10T428/31678
摘要： PROBLEM TO BE SOLVED: To provide an improved piezoelectric structure element, which has a stack consisting of at least two ceramic layers and an electrode layer arranged between two ceramic layers, without causing failure in the case of delaminate tendency by contraction in the reduction from copper oxide to copper, that is, without showing oxidization damage. SOLUTION: In the case of the monolithic multilayer structure type piezoelectric structure element which has the stack consisting of at least two ceramic layers and the electrode layer arranged between two ceramic layers, the electrode layer contains copper. COPYRIGHT: (C)2007,JPO&INPIT

50. 发明专利

JP2006265059A Manufacturing method of piezoelectric material and laminated piezoelectric element 审中-公开
标题翻译：压电材料和层压压电元件的制造方法
公开(公告)号：JP2006265059A
公开(公告)日：2006-10-05
申请号：JP2005088039
申请日：2005-03-25
申请人： Denso Corp , Nippon Soken Inc , 株式会社デンソー , 株式会社日本自動車部品総合研究所
发明人： KUBOTA HIROTAKA , YASUDA ETSURO , SUMIYA ATSUHIRO
IPC分类号： C04B35/49 , C04B35/491 , C04B35/493 , H01L41/083 , H01L41/187 , H01L41/22 , H01L41/273 , H01L41/39
CPC分类号： C04B35/493 , C04B2235/3213 , C04B2235/3215 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3251 , C04B2235/3258 , C04B2235/3265 , C04B2235/3294 , C04B2235/5409 , C04B2235/656 , C04B2235/6562 , C04B2235/6567 , C04B2235/658 , C04B2235/6584 , C04B2235/6586 , C04B2235/6588 , C04B2235/768 , C04B2235/77 , H01L41/083 , H01L41/1876 , H01L41/273
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a piezoelectric material and a laminated piezoelectric element which can be fired at a low temperature and can exhibit an excellent displacement amount even if fired at a low temperature. SOLUTION: The piezoelectric material contains 0.07 mol% or less of Sb 2 O 3 or Sb 2 O 5 against 1 mol of a compound expressed by general formula (1): (Pb 1-x Ma x )(Zr 1-y-z Ti y Sb z ) 1-p-q (Y 1/2 Nb 1/2 ) p (Mn 1-B1-B2 W B1 Sb B2 ) q O 3 (wherein Ma is one kind or more selected from the group consisting of Ba, La, Sr, and Ce). In a manufacturing method of a laminated piezoelectric element 1 which is obtained by laminating piezoelectric layer 11 and internal electrodes layers 21, 22 alternately, as a piezoelectric material there is used a material containing a compound of above general formula (1) and Sb 2 O 3 and/or Sb 2 O 5 . COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：为了提供即使在低温下烧制也可以在低温下烧制并且能够表现出优异的位移量的压电材料和层压型压电元件的制造方法。解决方案：压电材料含有0.07mol％或更少的Sb 2 3 或Sb 2 O < SB）与1摩尔由通式（1）表示的化合物：（Pb 1-x x ）（Zr 1-yz 的Ti ý锑ž） 1-PQ （Y 1/2 铌 1/2 ） p （MN 1-B1-B2 w ^ B1 锑 B2 ） q 2 3 和/或Sb 2 5 。版权所有（C）2007，JPO＆INPIT

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