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41. 发明专利

JPH0385722A PATTERN FORMATION 失效
公开(公告)号：JPH0385722A
公开(公告)日：1991-04-10
申请号：JP22160089
申请日：1989-08-30
申请人： TOSHIBA CORP
发明人： GOKOCHI TORU , TADA TSUKASA
IPC分类号： G03F7/20 , H01L21/027 , H01L21/3213
摘要： PURPOSE:To form a thick fine pattern having a good cross sectional shape by forming a latent image by selectively irradiating ionizing radiation or shortwave length ultraviolet ray to a resist film on a substrate and by carrying out development after ultraviolet ray is irradiated all over the resist film. CONSTITUTION:A resist film 2 is formed on a substrate 1. An exposure mask 5 having a mask pattern 4 on a transparent substrate 3 is arranged above the resist film 2. Ionizing radiation or a shortwave length ultraviolet ray is irradiated selectively through a transmitting part of the mask 5. At this time, ionizing radiation, etc., is irradiated, thereby discoloring the upper layer part of the resist film 2 and forming a latent image 6 having high transmission factor to ultraviolet ray. Then, ultraviolet ray is irradiated all over the resist film 2. At this time, a latent image 6' of high contrast which reaches the bottom of the resist film 2 is formed because of the existance of the formed latent image 6 of high transmission factor. The resist film 2 after entire irradiation is developed to form a resist pattern by dissolving selectively the part of the latent image 6' of the resist film 2.

42. 发明专利

JPH0261640A PHOTOSENSITIVE COMPOSITION 失效
公开(公告)号：JPH0261640A
公开(公告)日：1990-03-01
申请号：JP21183588
申请日：1988-08-26
申请人： TOSHIBA CORP
发明人： HAYASE SHUJI , HORIGUCHI RUMIKO , ONISHI KIYONOBU , GOKOCHI TORU
IPC分类号： G03F7/004 , G03F7/022 , G03F7/039 , G03F7/20 , H01L21/027
摘要： PURPOSE:To make it possible to form a resist pattern with a good sectional shape by incorporating an alkali-soluble resin and a specified photosensitive agent in the subject composition. CONSTITUTION:The alkali-soluble resin and the photosensitive agent shown in formula 1 are incorporated in the composition. In formula I, R1 - R4 are each hydrogen atom or (unsubst.)substd. alkyl group or an aromatic ring, R1 and R2, R3 and R4, and R2 and R3 together with each other may form a ring, respectively. Thus, when a resist film is applied on a substrate plate, etc., and then the resist film is exposed by a KrF excimer laser, a laser beam reaches to not only the surface of the resist film but also the film part adjacent to the substrate plate, the obtd. resist pattern is almost equal in the width of the resist pattern at the upper surface and the bottom surface thereof and has a good pattern profile.

43. 发明专利

JPH023055A SILICON-CONTAINING RESIST 失效
公开(公告)号：JPH023055A
公开(公告)日：1990-01-08
申请号：JP15177788
申请日：1988-06-20
申请人： TOSHIBA CORP
发明人： ONISHI KIYONOBU , HAYASE SHUJI , GOKOCHI TORU , HORIGUCHI RUMIKO
IPC分类号： G03F7/075 , H01L21/027 , H01L21/30
摘要： PURPOSE:To improve photosensitivity for extreme ultraviolet rays, etc. and oxygen reactive etching resistance of a resist by incorporating an alkali-soluble polymer having a phenol skeleton and a specified Si-contg. compd. into the resist. CONSTITUTION:An alkali-soluble Si-contg. polymer having a phenol skeleton and a compd. expressed by the formula I are incorporated into a resist compsn. In the formula I, each R1 to R6 may be same or different, expressing H or 1-10C (non)substituted alkyl group; R7 is an Si-contg. org. group; R8 is an H atom. Thus, a fine resist pattern can be formed since the resist has high sensitivity and high definition for extreme ultraviolet rays. Further, resistance to oxygen reactive etching of the resist pattern after development is improved if an Si- contg. compd. expressed by the formula I is used as another component of the resist.

44. 发明专利

JPH01154047A PHOTOSENSITIVE COMPOSITION 失效
公开(公告)号：JPH01154047A
公开(公告)日：1989-06-16
申请号：JP31265787
申请日：1987-12-10
申请人： TOSHIBA CORP
发明人： HAYASE SHUJI , ONISHI KIYONOBU , HORIGUCHI RUMIKO , GOKOCHI TORU
IPC分类号： G03C1/72 , H01L21/027 , H01L21/30
摘要： PURPOSE:To enable to sensitize the title composition with deep UV rays, and to form a fine resist pattern by composing the composition of an alkali soluble resin and a specified photosensitive agent. CONSTITUTION:The photosensitive composition is composed of the alkali soluble resin and the photosensitive agent shown by formula I wherein R1 and R2 are each 1-20C unsubstd. or substd. alkyl group, 1-20C unsubstd. or substd. alkyl group contg. silicon atom, an unsubstd. or substd. aryl group or an unsubstd. or substd. aryl group contg. silicon atom. Thus, the photosensitive composition having the high sensitivity and definition against the deep UV rays, especially, an exima laser of 248nm, can be obtd. And, the resist pattern having the excellent antioxygen reactive etching property (antioxygen RIE property) can be obtd. by exposing and developing the composition comprising the compd. contg. silicon as at least one of the alkaline soluble resin and the photosensitive agent.

45. 发明专利

JPS6457257A NEGATIVE TYPE RESIST COMPOSITION 失效
公开(公告)号：JPS6457257A
公开(公告)日：1989-03-03
申请号：JP21430487
申请日：1987-08-28
申请人： TOSHIBA CORP
发明人： TADA TSUKASA , GOKOCHI TORU , WATANABE HARUAKI
IPC分类号： H01L21/027 , G03F7/012
摘要： PURPOSE:To obtain the high sensitivity and dry-etching durability of the titled composition by composing the titled composition of a mixture of one or more kinds of copolymers of vinyl phenol and a specified monomer, and an azide compd. CONSTITUTION:The titled composition is composed of the mixture of one or more kinds of the copolymers of the vinyl phenol and the monomer shown by formula I, and the azide compd. In formula I, R1-R5 are each alkyl, alkoxy group or hydrogen atom. At least one of said groups R1-R5 is alkyl or alkoxy group. The monomer shown by formula I is exemplified by 2-methyl styrene or 3-methyl styrene, etc. Thus, the sensitivity of the titled composition is 2-5 times as large as that of the conventional composition contg. polyvinyl alcohol. The practical negative type resist having high performance and good resolution, heat resisting property and dry-etching durability is obtd.

46. 发明专利

JPS63116151A FORMATION OF PATTERN 失效
公开(公告)号：JPS63116151A
公开(公告)日：1988-05-20
申请号：JP26191986
申请日：1986-11-05
申请人： TOSHIBA CORP
发明人： GOKOCHI TORU , WATANABE HARUAKI , TADA TSUKASA
IPC分类号： G03F7/32 , G03F7/039 , G03F7/30
摘要： PURPOSE:To decrease swelling and film thinning in a developing stage by making development with a prescribed developing soln. by using a resist consisting of a homopolymer of a specific monomer or copolymer of said monomer and other radiation decomposition type monomer. CONSTITUTION:The homopolymer of the vinyl monomer expressed by the formula or the copolymer of said monomer and the other radiation decomposition type vinyl monomer (e.g.: trifluoroethyl alpha-chloroacrylate) is used as the positive type resist for radiations. In the formula, R1 denotes methyl, Cl; R2 denotes a (halogenated) alkyl of 1-10C, monovalent hydrocarbon group contg. a normal ratio of Si. After the film consisting of the above-mentioned resist material is exposed by electron rays or the like,the film is developed by using the developing soln. contg. 0.1wt% basic compd. (e.g.: tetramethyl ammonium hydroxide). The swelling and film thinning in the developing stage are then decreased and a high-resolution pattern is formed.

47. 发明专利

JP2002107778A UP-CONVERSION OPTICAL ELEMENT 失效
公开(公告)号：JP2002107778A
公开(公告)日：2002-04-10
申请号：JP2000300242
申请日：2000-09-29
申请人： TOSHIBA CORP
发明人： TODORI KENJI , GOKOCHI TORU , KIHARA NAOKO , ICHIMURA KOICHI
IPC分类号： G02F1/37 , H01S3/02 , H01S3/16
摘要： PROBLEM TO BE SOLVED: To provide an up-conversion optical element having new configuration for suppressing a relaxation process from an intermediate excitation level to a base state in up-conversion. SOLUTION: In order to forcedly suppress relaxation emission in up- conversion, an up-conversion medium is arranged in a field where light of the wavelength of relaxation emission can't exist. Such a 'fieldβ can be formed by a photonic structure and the wavelength of relaxation emission is made coincide with a photonic band gap.

48. 发明专利

JP2000330287A RESIN FOR RESIST, RESIST COMPOSITION AND PATTERN FORMING METHOD USING SAME 失效
公开(公告)号：JP2000330287A
公开(公告)日：2000-11-30
申请号：JP22453899
申请日：1999-08-06
申请人： TOSHIBA CORP
发明人： ASAKAWA KOUJI , GOKOCHI TORU , OKINO TAKASHI , SHINODA NAOMI , SAITO SATOSHI
IPC分类号： H01L21/027 , C08G63/00 , C08L67/00 , G03F7/004 , G03F7/033 , G03F7/039
摘要： PROBLEM TO BE SOLVED: To obtain a resin for a resist excellent in transparency of short- wavelength light, having high dry etching resistance and capable of forming a resist pattern having good adhesion and resolution by alkali development, to obtain a resist composition and to provide a pattern forming method using the resist composition. SOLUTION: The resin for a resist has a structure having a bridged alicycle and at least two oxygen-containing polar groups bonding to the tertiary carbon position of the bridged alicycle. The resist composition contains at least the resin and a photo-acid generating agent.

49. 发明专利

JP2000098612A PRODUCTION OF SEMICONDUCTOR DEVICE, PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD 失效
公开(公告)号：JP2000098612A
公开(公告)日：2000-04-07
申请号：JP26932098
申请日：1998-09-24
申请人： TOSHIBA CORP
发明人： OKINO TAKASHI , ASAKAWA KOUJI , SHINODA NAOMI , GOKOCHI TORU
IPC分类号： H01L21/027 , C08F2/48 , G03F7/039 , G03F7/38
摘要： PROBLEM TO BE SOLVED: To obtain a photosensitive composition having high transparency to light of short wavelength, high adhesion to a substrate, good resolution and dry etching resistance by incorporating a specified high molecular copolymer and a photo-acid generating agent. SOLUTION: The photosensitive composition contains at least a high molecular copolymer obtained by copolymerizing at least one of monomers of formulae I and II with at least one of monomers of formulae III-VII and a photo-acid generating agent. In the formulae I-VII, R is acryloyl or methacryloyl, R11 and R12 are each H or monovalent alkyl, R13 is OH, =O, COOH or COOR14 (R14 is a monovalent organic group), R31 is H or at least one group selected from OH, OR14 and =O, R32 is H or a monovalent organic group and R41 is vinyl, acryloyl or methacryloyl.

50. 发明专利

JPH10301283A PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THE SAME 失效
公开(公告)号：JPH10301283A
公开(公告)日：1998-11-13
申请号：JP11070697
申请日：1997-04-28
申请人： TOSHIBA CORP
发明人： SHINODA NAOMI , GOKOCHI TORU , NAKASE MAKOTO , ASAKAWA KOUJI , OKINO TAKASHI
IPC分类号： G03F7/039 , C08K5/04 , C08K5/10 , C08K5/20 , C08K5/41 , C08L33/00 , C08L43/02 , G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To obtain a compsn. having extremely small absorption for a light source in short wavelengths and showing excellent solubility, alkali developing property and resistance against dry etching by incorporating a base resin, a photoacid producing agent and a specified compd. SOLUTION: This compsn. contains a base resin, a photoacid producing agent and a compd. expressed by the formula R -X -R . In the formula, R is a univalent org. group, X is selected from >C=O, -C(=O)O-, -CONR - and -SO2 -, wherein R is a hydrogen atom, halogen atom or hydrocarbon group, R is a group containing an alicyclic structure and the atom in R which is directly bonded to X is tertiary carbon. The alicyclic structure in R consists of a single ring or 2 to 10 rings containing carbon atoms and one kind of atom selected from oxygen atom, nitrogen atom and sulfur atom and having 3 to 100 whole atoms.

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