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    • 42. 发明专利
    • Semiconductor light emitting device, element thereof, and manufacturing method for the same
    • 半导体发光器件及其制造方法及其制造方法
    • JP2005302762A
    • 2005-10-27
    • JP2004112034
    • 2004-04-06
    • Toshiba Corp株式会社東芝
    • OTSUKA KAZUAKISHINODA NAOMITAMAYA MASAAKI
    • H01L33/10H01L33/32H01L33/36H01L33/50H01L33/56H01L33/60H01L33/62H01L33/00
    • PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element which can be reduced in a decline in luminance and in the variation in color tones.
      SOLUTION: The semiconductor light emitting element comprises a substrate 21, first semiconductor layers 22 and 23 having a first conductivity type which are formed on the substrate 21, active layer 24 formed on the first semiconductor layers 22 and 23, second semiconductor layers 25 and 26 having a second conductivity type which are formed on the active layer 24, first electrodes 28a and 28b in contact with the first semiconductor layers 22 and 23, second electrodes 27a and 27b formed on the second semiconductor layers 25 and 26, and peripheral portion 20c having a semiconductor layer which is formed on the substrate 21 so as to surround the first semiconductor layers 22 and 23, the active layer 24, and the second semiconductor layers 25 and 26 at a distance, with its upper end higher than that of the second semiconductor layers 25 and 26.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供可以在亮度下降和色调变化方面减少的半导体发光元件。 解决方案:半导体发光元件包括基板21,形成在基板21上的第一导电类型的第一半导体层22和23,形成在第一半导体层22和23上的有源层24,第二半导体层 25和26具有形成在有源层24上的第二导电类型,与第一半导体层22和23接触的第一电极28a和28b,形成在第二半导体层25和26上的第二电极27a和27b以及周边 部分20c具有半导体层,其形成在基板21上以围绕第一半导体层22和23,有源层24和第二半导体层25和26一段距离,其上端高于 第二半导体层25和26。(C)2006,JPO&NCIPI