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41. 发明专利

JPH08250507A DEPOSITION METHOD OF SEMICONDUCTOR FILM 失效
公开(公告)号：JPH08250507A
公开(公告)日：1996-09-27
申请号：JP4729795
申请日：1995-03-07
申请人： TOSHIBA CORP
发明人： SUZUKI TAKASHI , MIKATA YUICHI , KASAI YOSHIO , OGINO HIROSHI
IPC分类号： H01L21/28 , H01L21/205 , H01L21/285 , H01L21/324
摘要： PURPOSE: To prevent impurities contained in a film from diffusing outward due to high temperature annealing in a following process by forming an impurity diffusion prevention layer of low diffusion coefficient when the film is formed on a semiconductor board. CONSTITUTION: A trench 14 is provided to a silicon board 13 and an impurity diffusion layer 15 is formed in a bottom part thereof. An insulation film 16 is provided on a sidewall inside a trench and a surface of the board 13. After formation of the insulation film 16, PH3 is introduced for forming a lower electrode 17 in a surface thereof. A capacitor insulation film 18 is provided on the lower electrode 17 and the insulation film 16. The insulation film 18 is formed of a thin oxide film formed by feeding O2 gas between SiH4 thermal decomposition films. Si 19 doped with phosphorus which becomes an upper electrode is filled above the insulation film 18. Impurities inside a semiconductor can be prevented from diffusing outward by high temperature annealing in a following process by providing an impurity diffusion prevention layer comprised of an oxide film in the capacitor insulation film 18.

42. 发明专利

JPH06302566A METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH06302566A
公开(公告)日：1994-10-28
申请号：JP9003093
申请日：1993-04-16
申请人： TOSHIBA CORP
发明人： NAKAO TAKASHI , TSUNASHIMA YOSHITAKA , MIKATA YUICHI
IPC分类号： H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/311
摘要： PURPOSE:To control an amount of reducing agent to be supplied to a substrate to be processed and control a progress of reducing reaction at each substrate by disposing a member oppositely to a semiconductor device manufacturing surface, and controlling reaction with the agent on the surface of the member oppositely to the substrate to be processed. CONSTITUTION:A member having a plate surfacelike surface at a position adjacent to a semiconductor device manufacturing surface of a substrate 8 to be processed is placed on a receiver 7. And, partial pressure of monosilane gas or reaction generated gas is controlled by a reaction with the monosilane gas at least part of the surface of the member (i.e., consumption of the monosilane gas is controlled). Thus, a supply amount of the monosilane gas to the substrate 8 to be processed (a ratio of the monosilane gas to be supplied to the substrate 8 to be processed) is controlled to control the partial pressure of reaction product. A progress of reducing reaction of a natural oxide film on the surface of the substrate 8 to be processed is controlled as desired.

43. 发明专利

JPH05226279A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH05226279A
公开(公告)日：1993-09-03
申请号：JP2358792
申请日：1992-02-10
申请人： TOSHIBA CORP
发明人： CHISHIMA EIJI , MIKATA YUICHI , MORIYA TAKAHIKO , OKUMURA KATSUYA
IPC分类号： C23C16/24 , C23C14/16 , C23C16/56 , C30B25/14 , H01L21/205 , H01L21/28 , H01L21/3205
摘要： PURPOSE:To increase the amount of adsorption of phosphors or arsenic into a polycrystalline silicon film by passing an organic compound or a halogen compound gas which includes phosphors or arsenic over the polycrystalline silicon film. CONSTITUTION:At first, the surface of a P- type silicon substrate 10 is thermally oxidized, thereby forming a silicon oxide film 11. Then, arsenicions are implanted into a part of the silicon substrate 10 by way of this oxide film 11. After the implantation is over, the implanted arsenic is diffused by heat treatment so as to form an N type diffusion region 12. The oxide film 11 on the diffusion region 12 is removed by means of photo-etching. Then, the silicon substrate 10 is placed into a reduced pressure CVD device where monosilane gas and TBP gas are alternately passed. After repeated, the substrate is heat-treated, thereby forming a polycrystalline silicon film 13 which includes phosphors uniformly. The phosphors adsorption layer according to this embodiment can be more thickly formed than the thickest phosphors adsorption layer formed by the prior art phosphine. This is because there is no limit to the amount of phosphors adsorption when TBP is used so as to adsorb phosphors.

44. 发明专利

JPH0459971A FORMATION OF SILICON NITRIDE FILM 失效
公开(公告)号：JPH0459971A
公开(公告)日：1992-02-26
申请号：JP17115690
申请日：1990-06-28
申请人： TOSHIBA CORP
发明人： MIKATA YUICHI , MORIYA TAKAHIKO
IPC分类号： C23C16/34 , C23C16/44 , C23C16/455 , H01L21/318
摘要： PURPOSE:To form a uniform thin film of Si3N4 on the surface of a substrate by supplying a gaseous mixture consisting of an organic compound gas containing Si and amine groups and an NH3 gas or an N2-containing gas into a vacuum tank containing plural substrates and decomposing this gaseous mixture by means of heating, etc. CONSTITUTION:Plural substrates 2, such as semiconductor wafers, are piled up in a tube furnace 1 having a heater 3 on the side wall, and the inside of the furnace is evacuated via an exhaust hole 4. An organic compound gas, such as Si[N(CH3)2]4, having a composition containing Si and amine groups and free from Cl is supplied via an air supply pipe 5 into the furnace, and an organic gas of NH3, etc., containing N and free from Cl, is mixed via an air supply pipe 6 under reduced pressure, and the resulting gaseous mixture is brought into contact with the surface of respective surfaces of the substrates 2 heated by the heater 3. The gaseous mixture is decomposed and allowed to react by heating or by means of forming into plasmic state, radiation excitation, etc., by which an Si3N4 film having uniform thickness is formed on the surface of each substrate 2. Since the raw-material gas is free from Cl in this case, the contamination of the Si3N4 film due to the formation of (NH4)Cl can be prevented.

45. 发明专利

JPH045824A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH045824A
公开(公告)日：1992-01-09
申请号：JP10529990
申请日：1990-04-23
申请人： TOSHIBA CORP , TOSHIBA MICRO ELECTRONICS
发明人： MIKATA YUICHI , OKUMURA KATSUYA , ISHIHARA KATSUNORI
IPC分类号： H01L21/205 , H01L21/28 , H01L21/3205 , H01L21/3215
摘要： PURPOSE:To make an impurity concentration in the depth direction uniform by a method wherein a polycrystalline silicon film which does not contain any impurities is formed, inside a low-pressure CVD apparatus, on a substrate provided with an insulating film in which a contact hole or the like has been opened, impurities are adsorbed and diffused, this process is repeated and a film thickness is prescribed. CONSTITUTION:An insulating film 42 is formed on the surface of a P type Si substrate 41 or the like; As or the like is doped; an N region 40 is formed in the substrate 41; an opening is made in the film 42 corresponding to the region 40; a contact hole is formed. Then, a prescribed gas is pyrolyzed at a prescribed temperature and under a reaction pressure inside a low-pressure CVD apparatus, and a polycrystalline silicon film 43 is formed on the film 42 including the contact hole part. In succession, a prescribed gas is pyrolyzed, and the surface of the film 43 is covered uniformly with impurities such as phosphorus or the like. In succession, the same process is repeated; a polycrystalline silicon film 44 is formed; the process is repeated until a laminated polycrystalline silicon film 45 becomes a required film thickness. Then, an electrode extraction wire whose impurity concentration in the depth direction is uniform can be formed.

46. 发明专利

JPH01302747A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH01302747A
公开(公告)日：1989-12-06
申请号：JP9272488
申请日：1988-04-15
申请人： TOSHIBA CORP , TOSHIBA MICRO ELECTRONICS
发明人： MIKATA YUICHI , ISHIHARA KATSUNORI
IPC分类号： H01L21/8247 , H01L21/28 , H01L21/31 , H01L21/314 , H01L21/3205 , H01L21/336 , H01L23/52 , H01L29/78 , H01L29/788 , H01L29/792
摘要： PURPOSE:To improve the withstand voltage of an insulating film by a method wherein a non-single crystal silicon film is formed on the insulating film, while said silicon film is converted into a polycrystalline film by conducting annealing thereon, and a non-single crystal silicon film containing impurities is formed on the polycrystalline silicon film. CONSTITUTION:A first gate oxide film 2 is formed on the main surface of a silicon-substrate 1 by conducting thermal oxidization, and a non-single crystal silicon film 3 is formed by deposition by the oxide film 2. Crystal grains are generated and crystallized on the silicon film 3 by conducting an annealing treatment without exposing the substrate 1 to the ambient air. Said crystal becomes a polycrystalline-silicon film 3 by conducting a heat treatment in a furnace at 600 deg.C or higher. A phosforus-doped polycrystalline silicon film 4 is formed thereon without exposing the substrate 1 to the ambient air. The second gate oxide film 5 is formed by conducting thermal oxidization on the silicon film 4. A polycrystalline silicon film 6 is deposited on the oxide film 5. As a result, the withstand voltage of the oxide film 2 can be improved.

47. 发明专利

JPS6242416A SUSCEPTOR FOR HEATING SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPS6242416A
公开(公告)日：1987-02-24
申请号：JP18155385
申请日：1985-08-19
申请人： TOSHIBA CORP
发明人： SAMATA SHUICHI , MATSUSHITA YOSHIAKI , MIKATA YUICHI , SHIRAI HIDEKI
IPC分类号： H01L21/205 , H01L21/31 , H01L21/324
摘要： PURPOSE:To improve the yield of production and reliability of the titled susceptor by a method wherein a hollow part is provided in the region which comes in contact with the circumferential part of a semiconductor substrate, thereby enabling to heat the semiconductor substrate uniformly. CONSTITUTION:A semiconductor substrate 2 is placed on a suspector 1, the susceptor 1 has an almost disc-like shape, a disc-shaped hollow part 3 is provided therein, and the hollow part 3 is formed directly under the part which comes in contact with the circumferential part of the semiconductor substrate 2 of the susceptor 1. The heat transmitted to the circumferential part is obstructed by the presence of the hollow part 3, and the temperature distribution can be made uniform. If the hollow part 3 is formed at the optimum position, the ideal and completely uniform temperature distribution can be obtained.

48. 发明专利

JPS6218021A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6218021A
公开(公告)日：1987-01-27
申请号：JP15739385
申请日：1985-07-17
申请人： TOSHIBA CORP
发明人： TSUCHIYA NORIHIKO , USAMI TOSHIRO , MIKATA YUICHI
IPC分类号： H01L21/28
摘要： PURPOSE:To lessen and stabilize the contact resistances between the substrate and the wiring layers and to obtain a semiconductor device of high-speed efficiency at a high yield by a method wherein the natural oxide film on the surface of the substrate is removed in a vacuum state and the conductive layers are formed on the substrate while a vacuum state is held. CONSTITUTION:For connection of P impurity regions 6 and 7 with wiring layers 12 and 13, amorphous Si are evaporated on the surfaces of the P impurity regions 6 and 7 exposed in a vacuum state, and are heated, and moreover wiring material are evaporated while a vacuum state is held. According to such a ways, the natural oxide films formed on the surfaces of the P impurity regions 6 and 7 vanish to suppress new formation and then the surfaces of the P impurity regions 6 and 7 and the wiring material films can be connected to each other in the state intact. By this way, the contact resistances between the P impurity regions 6 and 7 and the wiring layers 12 and 13 can be suppressed to a small and stable value.

49. 发明专利

JPS624315A SUSCEPTOR FOR VAPOR GROWTH APPARATUS 失效
公开(公告)号：JPS624315A
公开(公告)日：1987-01-10
申请号：JP14376285
申请日：1985-06-29
申请人： TOSHIBA CORP
发明人： SHIRAI HIDEKI , MATSUSHITA YOSHIAKI , MIKATA YUICHI , SAMATA SHUICHI
IPC分类号： H01L29/78 , H01L21/205 , H01L21/31
摘要： PURPOSE:To make the temperature distribution in a heated substrate uniform and avoid slippage by a method wherein the shape of the bottom surface of a substrate accomodating part provided on the surface of a susceptor main body is made to be convex and protruded parts, which support the substrate, are provided on the portions of the bottom surface. CONSTITUTION:The bottom surface 12 of a substrate-accomodating part of a susceptor 11 has a convex shape. Protruded parts 13 are provided on the portions of the bottom surface 12 and a silicon substrate 14 is supported by those protruded parts 13. With the susceptor 11 composed like this, the substrate 14 is heated by radiant heat from the susceptor 11. As the distance between the susceptor 11 and the circumference part of the substrate 14 where the temperature rises relatively easily is larger than the distance between the susceptor 11 and the center part of the substrate 14, the temperature distribution in the substrate 14 can be made uniform.

50. 发明专利

JPS61220471A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS61220471A
公开(公告)日：1986-09-30
申请号：JP6231485
申请日：1985-03-27
申请人： TOSHIBA CORP
发明人： USAMI TOSHIRO , MIKATA YUICHI , OOTA TAKAO , OKUMURA KATSUYA
IPC分类号： H01L29/78 , H01L21/336 , H01L29/47
摘要： PURPOSE:To form a silicide film of Ti or Zr with good controllability, by depositing a Ti film or a Zr film under a specified partial pressure of oxygen, depositing an Si film thereon with the partial pressure of the oxygen being kept, and performing heat treatment. CONSTITUTION:On an Si substrate 21, a field oxide film 22 and an N-type inversion preventing layer 23 are formed. Then, in an element forming region, a gate oxide film 24, a gate electrode 25 and P type source and drain regions 26 and 17 are formed. Then, a wiring comprising polycrystalline Si is provided. A CVD oxide film 28 is formed on the electrode 25 and the side wall of the wiring. Thereafter, the partial pressure of oxygen atmosphere is made to be 10 torr or less, and a Ti film 29 is deposited by sputtering. Then, with the partial pressure of the oxygen being kept, an Si film 30 is deposited. When the partial pressure of the oxygen exceeds 10 torr, a metal oxide film might be yielded. Then, heat treatment is performed in a diffusing furnace, and the films 29 and 30 are made to be a Ti silicide film 31. The parts of the film 31 other than the electrode 25, the wiring and the regions 26 and 27 are re moved. Thereafter, an oxide film 32 is deposited, and wirings 34 and 35 are formed.

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