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41. 发明专利

JPS5998523A ELECTRON BEAM EXPOSING APPARATUS 失效
公开(公告)号：JPS5998523A
公开(公告)日：1984-06-06
申请号：JP20783282
申请日：1982-11-27
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SHIBAYAMA AKINORI
IPC分类号： H01L21/027 , G03F7/20 , H01J37/304
摘要： PURPOSE:To detect the change of relative positional relation with time within a short period of time and control the electron beam radiation position by disposing a conductive material piece providing a mark between the electron beam reflecting cylinder and an exposing sample setting surface of stage. CONSTITUTION:An electron beam is deflected to an orbit 18' and is located to 8-3 by a deflector 16 depending on the signal sent from a deflection control circuit 2 and moreover the reference mark 8 is focused by a focusing coil 17. The mark itself 8-1 of mark 8 is scanned by electron beam with the deflector 6 as indicated by a locus 8-4X or 8-4Y. The reflected electrons are captured by the reflected electron detector 7 and are sent to a signal processing circuit 3. The deflected data 13 and reflected electron signal inputted are compared each other. Corresponding mark position deflecting data is transferred to a computer 1, held therein and DELTAX, DELTAY are transferred to the deflection control circuit 2 and held therein. Change with time of electron beam position for the electron beam reflecting cylinder is compensated by renewing DELTAX and DELTAY.

42. 发明专利

JPS5618424A APPARATUS FOR ELECTRON BEAM LITHOGRAPHY 失效
公开(公告)号：JPS5618424A
公开(公告)日：1981-02-21
申请号：JP9343579
申请日：1979-07-23
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SHIBAYAMA AKINORI , MORIYA SHIGERU
IPC分类号： H01L21/027 , H01J37/304 , H01L21/30
摘要： PURPOSE:To repeat the exposing operation until the normal exposure is attained by detecting the irradiation of an electron beam on an exposed specimen, comparing the variation of the detected signals and the variation of the beam blanking signal, and judging the abnormal state. CONSTITUTION:The signal from a CPU 1 is converted into deflecting analog signals 11 by a deflecting circuit 5. When the deflecting analog signals 11 reach a specified analog level, a degital control circuit 2 grings a beam blanking signal 8 to a beam- on level, thereby the electron beam is irradiated to a specimen 18 to be exposed. The electrons reflected by the exposed specimen 18 is trapped by an electron- beam detector 20, the signal level is judged by an electron-beam detecting and processing circuit 6, and the output is supplied to an error recognizing circuit 3. The beam blanking signal 8 is also supplied to the error recognizing circuit 3. Until the normal electron-beam irradiation is recognized, the deflecting positions remain unchanged, and the exposing operation is repeated.

43. 发明专利

JPH06291018A MASK FOR X-RAY EXPOSURE 失效
公开(公告)号：JPH06291018A
公开(公告)日：1994-10-18
申请号：JP7473693
申请日：1993-03-31
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SUZUKI MASANORI , SHIBAYAMA AKINORI
IPC分类号： G03F1/22 , G03F9/00 , H01L21/027 , H01L21/30 , G03F1/16
摘要： PURPOSE:To reduce the influence of multiple reflection on the position of a mask for X-ray exposure, namely, to improve the alignment accuracy of the mask and, at the same time, to form a highly accurate fine pattern. CONSTITUTION:An X-ray absorbing layer 3 is formed on an X-ray transmitting substrate 1 and a position detecting mark 21 used for aligning a semiconductor wafer stuck with an X-ray sensitive film is formed by forming a step on the substrate 1. It is also possible to provide a non-transmitting layer which intercepts position detecting light in an area of the mask for X-ray exposure containing the position detecting mark or to provide a reflection preventing film which transmits the position detecting light on both or one surface of the substrate 1 in an area containing a transmitting window. It is also possible, moreover, the non-transmitting and reflection preventing layers can be constituted in one layers or pluralities of layers.

44. 发明专利

JPH06288710A DISLOCATION DISTANCE MEASURING METHOD BY MEANS OF DIFFRACTION GRATING AND ITS DEVICE 失效
公开(公告)号：JPH06288710A
公开(公告)日：1994-10-18
申请号：JP7835593
申请日：1993-04-05
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SUZUKI MASANORI , SHIBAYAMA AKINORI
IPC分类号： G01B11/00 , G02B5/18 , H01L21/027
摘要： PURPOSE:To provide a dislocation distance measuring device by means of a diffraction grating and its device by which a relative dislocation amount between diffraction gratings can be detected easily with high accuracy and high stability and without restriction due to an X-ray mask. CONSTITUTION:Monochromatic lights in two wavelengths with different frequencies are made incident respectively upon a first diffraction grating H1 and a second diffraction grating H2 provided on the same plane of an article to be measured 12 after they are guided to pass a window 24 through which the monochromatic light may pass and two optical heterodyne interference composite diffracted lights are generated by having two diffracted lights generated from these diffraction gratings H1 and H2 subjected to optical-heterodyne interfere. First and second optical heterodyne interference beat signals based on these composite diffracted lights corresponding to first diffraction grating H1 and the second diffraction grating H2 respectively are generated. By acquiring a phase dislocation amount from the phase difference between these beat signals, a dislocation amount of the second diffraction grating H2 against the first diffraction grating H1 is acquired.

45. 发明专利

JPS63259999A CIRCULAR ACCELERATOR 失效
公开(公告)号：JPS63259999A
公开(公告)日：1988-10-27
申请号：JP9476787
申请日：1987-04-17
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SHIBAYAMA AKINORI , UNO TAIDO
IPC分类号： H05H7/02 , H05H13/00 , H05H13/04

46. 发明专利

JPS6269497A CHARGED BEAM INCIDENT SYSTEM FOR CIRCULAR ACCELERATOR 失效
公开(公告)号：JPS6269497A
公开(公告)日：1987-03-30
申请号：JP20818085
申请日：1985-09-20
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： NISHIMURA KAZUYOSHI , SHIBAYAMA AKINORI , UNO TAIDO
IPC分类号： H05H7/08 , H05H13/04

47. 发明专利

JPS5987815A DEFLECTION CONTROLLING FOR THEREOF ELECTRON BEAM AND CIRCUIT 失效
公开(公告)号：JPS5987815A
公开(公告)日：1984-05-21
申请号：JP19707182
申请日：1982-11-10
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SHIBAYAMA AKINORI , FUJINAMI AKIHIRA , SHIMAZU NOBUO
IPC分类号： H01J37/147 , H01J37/302 , H01J37/305 , H01L21/027
摘要： PURPOSE:To reduce the wasted time produced by every pattern by a method wherein the waiting time, during which an electron beam is off, is changed according to the variation of deflection distance and the beam measure of every pattern. CONSTITUTION:A deflection waiting time generating circuit 8, which generates the deflection waiting time, during which an electron beam is off at every variation of the deflection position, according to the output data of a deflection selection circuit 7, and a measure variation waiting time generating circuit 10, which generates a measure variation waiting time, during which an electron beam is off at the measure variation of the electron beam, according to the output data of a measure selection circuit 9, and a waiting time setting circuit 11, which sets a temporary waiting time, which is the longer one of the bias waiting time and the measure variation waiting time selected by comparison of them and during which an electron beam of every variation of the deflection position off, and alike are provided.

48. 发明专利

JPS5812979B2 失效
公开(公告)号：JPS5812979B2
公开(公告)日：1983-03-11
申请号：JP4536376
申请日：1976-04-23
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SHIBAYAMA AKINORI
IPC分类号： H01J37/09 , H01J37/26

49. 发明专利

JPS55102231A METHOD FOR CORRECTING DISTORTION OF ELECTRON BEAM EXPOSURE DEVICE AND CIRCUIT THEREOF 失效
公开(公告)号：JPS55102231A
公开(公告)日：1980-08-05
申请号：JP850479
申请日：1979-01-27
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SHIBAYAMA AKINORI , SHIMAZU NOBUO
IPC分类号： H01L21/027 , H01J37/304
摘要： PURPOSE:To provide pictures to the sample that moves continuously by adding both the quantity of movement of the sample location from the measurement of distortion to the correction of picturing data and the quantity of compensation of deflection location to the picturing data which is obtained by correcting the distortion of the shape of sample. CONSTITUTION:First, the marks at four corners of the area (1, 1) are detected, previously held correction values 12, 13 are subtracted from the measured values 10, 11 of the sample location to compensate the measured values. On the other hand, the area (1, 1) is divided into the form of a matrix, the quantity of distortion correction corresponding to the central coordinates of each element area is stored 5, read by the signal 3, 4, addition and subtraction are applied to it to compensate the location 1, 2 given by the distortion of the shape of sample. The data, which are obtained by applying the addition and subtraction to the corrected outputs 18-21, are compensated 31, 32 by previously stored deflection location errors that are read by the signals 26, 27. By repeating the operation, the picture can precisely be provided to the desired position of the sample that moves continuously. Also the correction factors can be computed by the circuits 5, 28, the location error of a sample that moves at the speed of about 20mm/sec is 0.02mum per 1mu sec of the operation time.

50. 发明专利

JPS5587071A MEASURING UNIT OF ELECTRON BEAM DENSITY DISTRIBUTION AND ITS MEASURING METHOD 失效
公开(公告)号：JPS5587071A
公开(公告)日：1980-07-01
申请号：JP15918478
申请日：1978-12-26
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SHIBAYAMA AKINORI , KOYABU KUNIO
IPC分类号： G01T1/29
摘要： PURPOSE:To measure the two dimensional density distribution with high accuracy and resolution, by deflecting and impinging measured electron beam on the sharp angle of single crystal piece two-dimensionally. CONSTITUTION:When the deflector 10 is controlled with the digital coordinate signal from the operation unit 13 providing the memory corresponding to the coordinates (i, j) of the virtual matrix 24, the electron beam 1 is deflected two-dimensionally with the DA converters 11, 12 and deflectors 14, 15, and the corner of the single crystal material 17 having sharp sectional shape located on the tool 23 is irradiated, and no reflection electron beam from the tool 23 is impinged on the reflection electron detector 3 placed opposingly to the upper surface a of the crystal material 17, and the reflection beam from the surface a is detected with the detector 3 with the catching rate in response to the direction of deflection of the electron beam. The result of detection is stored at the coordinate corresponding to the memory of the unit 13, and the unit 13 calculates and determines the two-dimensional density distribution of electron beam with high accuracy and resolution according to the memory content of the result of detection per each coordinate.

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