会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 41. 发明专利
    • Feedback amplifier
    • 反馈放大器
    • JPS59178006A
    • 1984-10-09
    • JP5287983
    • 1983-03-29
    • Mitsubishi Electric Corp
    • IKEDA YUKIOTAKAGI SUNAOKIYONO KIYOHARU
    • H03F3/60
    • H03F3/60
    • PURPOSE:To change easily the gain of the entire system by providing an epitaxial layer to a lower part of a finger of a comb line coupler and forming alternately a Schottky junction and an ohmic junction plane onto the boundary face. CONSTITUTION:The epitaxial layer 20 is provided at the lower part of the fingers 18 and 19 of the comb line coupler of a feedback amplifier formed on a semiconductor substrate 16. Further, the Schottky junction plane is formed to the boundary between the finger 18 and the layer 20 and the ohmic junction plane is formed to the boundary face between the finger 19 and the layer 20. In changing the area of spread of a depletion layer 21 by adjusting a bias power supply 22 of the finger 18, the coupling capacitance between the fingers 18 and 19 is changed by the change in the capacitance of the depletion layer, resulting that the degree of coupling of the comb line coupler is changed. As a result, the gain of the feedback amplifier is changed.
    • 目的:通过向梳状线耦合器的手指的下部提供外延层并且在边界面上交替地形成肖特基结和欧姆结面,来容易地改变整个系统的增益。 构成:外延层20设置在形成在半导体衬底16上的反馈放大器的梳状线耦合器的指状物18和19的下部。此外,肖特基结面形成于手指18与 层20和欧姆结面形成在手指19和层20之间的边界面上。通过调节手指18的偏置电源22来改变耗尽层21的扩散面积, 指状物18和19由于耗尽层的电容的变化而改变,导致梳状线耦合器的耦合度改变。 结果,反馈放大器的增益被改变。
    • 47. 发明专利
    • AMPLIFIER MODULE OF ANTENNA INTEGRATING TYPE
    • JP2001053544A
    • 2001-02-23
    • JP22794099
    • 1999-08-11
    • MITSUBISHI ELECTRIC CORP
    • NAKAYAMA MASATOSHIIKEDA YUKIOMORI KAZUTOMIYAMAUCHI KAZUHISA
    • H01Q23/00
    • PROBLEM TO BE SOLVED: To improve performance and to miniaturize a device by providing a transmitting amplifier for connecting with a power feeding point lower than a prescribed impedance and a receiving amplifier for connecting with a power feeding point higher than a prescribed impedance among plural power feeding points to give an antenna. SOLUTION: A plate-like patch antenna 32, consisting of a thin copper foil, is stuck to a dielectric substrate 31 having a ground surface stuck on its rear surface, a high-powered amplifier for transmission 36 is connected with a power feeding point 33 given in the central area of the antenna 32, and a low-noise amplifier for reception 37 is connected with a power feeding point 34 given in a peripheral area. For the value of a power feeding impedance, the power feeding impedance of the point 33 can be lowered and the power feeding impedance of the point 34 can be raised by properly selecting the position of a feeding point at the antenna 32. It is dispensed with providing a matching circuit on the output side of the amplifier 36 and the input side of the amplifier 37, thereby the characteristics can be improved and a device can be miniaturized.
    • 48. 发明专利
    • POWER AMPLIFIER
    • JP2000349564A
    • 2000-12-15
    • JP15952499
    • 1999-06-07
    • MITSUBISHI ELECTRIC CORP
    • YAMAUCHI KAZUHISAIKEDA YUKIONAKAYAMA MASATOSHIMORI KAZUTOMIITO YASUYUKINAKAAZE HIROAKI
    • H03F1/32
    • PROBLEM TO BE SOLVED: To provide a distortion compensating effect for a semiconductor amplifier itself by properly giving the semiconductor amplifier the signal of the base band frequency of a modulation wave or the amplitude phase of double waves. SOLUTION: When the sum signal of adjacent frequencies f1 and f2 is inputted to an input terminal, a current having the even-ordered nonliniarity of a transistor 5 and a base band frequency Δf=f1-f2 is generated in a drain. Since this frequency Δf is lower than that of an input signal, the impedance of a capacitor becomes high and the current of the base band frequency signal flows to a bias circuit 6. As the result, when the impedance of a bias circuit 6 with respect to the base band is not 0 Ω, the voltage of the base band frequency is generated at a drain terminal. This voltage variation modulates the input signal to generate an inter-modulation distortion of 2f1-f2, 2f2-f1, etc., and controls the amplitude and the phase of the base band frequency signal generated by the even-ordered nonlinearity of the transistor 5 to control the amplitude and the phase of the inter-modulation distortion of the semiconductor amplifier.
    • 50. 发明专利
    • DISTORTION COMPENSATING CIRCUIT
    • JP2000151295A
    • 2000-05-30
    • JP31464798
    • 1998-11-05
    • MITSUBISHI ELECTRIC CORP
    • HORIGUCHI KENICHINAKAYAMA MASATOSHIIKEDA YUKIO
    • H03F1/34H03F1/32H03F1/38H03G3/30H04B1/04
    • PROBLEM TO BE SOLVED: To obtain a distortion compensating circuit which can always optimize distortion compensation irrelevantly to variation in the mean power of an input signal, secular changes of an amplifier, and state changes of the amplifier accompanying temperature variation and can perform distortion compensation even when the range of the input frequency is wide. SOLUTION: The distortion compensating circuit is equipped with a vector adjuster 9, a linearizer 10, an amplifier 11, a linear signal extraction path 4 for extracting part of the input signal from the input side of the vector adjuster, a nonlinear signal extraction path 5 for extracting part of the output signal from the output side of the amplifier, a level detector 12 which detects the composite power level of the linear signal extraction path and nonlinear signal extraction path, and a control circuit 13 which adjusts the bias of the linearizer according to the detected composite power level, electrically adjusts the linearizer so that the detected power is minimum, and further adjusts the vector adjuster so that the detected power becomes minimum each time the linearizer is adjusted.