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41. 发明专利

JPS5513904A SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JPS5513904A
公开(公告)日：1980-01-31
申请号：JP8609578
申请日：1978-07-17
申请人： HITACHI LTD
发明人： TSUNEKAWA SUKEYOSHI , HARADA YUKIYOSHI , HONMA YOSHIO
IPC分类号： H01L21/76
摘要： PURPOSE:To improve an integrating rate and a reliability of the wiring by forming flat the separated insulation layer interposed between the elements by a bias spattering method. CONSTITUTION:A concave portion 3 with a steep side face is slectively formed on a substrate 1 by an ion milling method and others and is covered with thin SiO2 film 4 to bury an insulator into the concave portion 3 by a bias spattering method. The element is formed in a region 6 by utilizing an appropriate mask. In this case, SiO2, Si3N4, alumina and others are used for the insulator. According to such a method, the surface of the substrate can be formed flat, the fine working to the element be easily established and further the disconnection of the wires by prevented.

42. 发明专利

JPS557880A ETCHING SOLUTION FOR ORGANIC RESIN 失效
公开(公告)号：JPS557880A
公开(公告)日：1980-01-21
申请号：JP5151979
申请日：1979-04-27
申请人： HITACHI LTD
发明人： SAIKI ATSUSHI , OOKUBO TOSHIO , HARADA YUKIYOSHI
IPC分类号： C09K13/06 , C08J7/00 , C08J7/02 , H01L21/312
摘要： PURPOSE:Title etching solution that contains hydrazine, a polyamine and/or guanidine, thus being suitable for extremely fine processing. CONSTITUTION:Said etching solution contains (A) hydrazine, (B) a polyamine of formula I (n is 3 or more integral number), such as ethylenediamine, and (C) guanidine of formula II. USE:An etching solution for films of polyimide resin.

43. 发明专利

JPS54109387A ETCHING METHOD 失效
公开(公告)号：JPS54109387A
公开(公告)日：1979-08-27
申请号：JP1539678
申请日：1978-02-15
申请人： HITACHI LTD
发明人： MIZUTANI TATSUMI , KOMATSU HIDEO , IIDA SHINYA , HARADA YUKIYOSHI
IPC分类号： H01L21/3213 , C23F1/08 , H01L21/302 , H01L21/306 , H01L21/3065
摘要： PURPOSE:To make etching speed to desired speed, by using boron trichloride or carbon tetrachloride including 0.1 to 10 vol.% either of chlorine or hydrogen chloride as introduced gas, in forming the Al fine wiring of IC with the plasma etching in the vacuum chamber. CONSTITUTION:The test piece 20 is mounted on the high frequency electrode 2 or opposing electrode 3 in the vacuum chamber 1, and the chamber 1 is vented with the vacuum pumps 5 to 7. Further, the valve 8 is closed, interrupting the connection with the pumps and the mixing gas of boron trichloride or carbon tetrachloride gas and chlorine is fed to the chamber 1, and it is discharged from the liquid nitrogen traps 10 and 11 incorporating heaters 18 and 19. In this case, the amount of chlorine and hydrogen chrolide mixed is specified to 0.1 to 10 vol. % of the main gas. Further, high frequency voltage is fed from the power supply 21 to the electrode 2, producing glow discharge plasma and etching Al on the test piece 20. Thus, the control of etching speed is made easy while performing under-cut.

44. 发明专利

JPS53116089A WIRING CONSTITUENT BODY 失效
公开(公告)号：JPS53116089A
公开(公告)日：1978-10-11
申请号：JP3033377
申请日：1977-03-22
申请人： HITACHI LTD
发明人： HONMA YOSHIO , SATOU AKIRA , NOZAWA HISAO , HARADA YUKIYOSHI , KACHI TADAO
IPC分类号： H05K3/28 , B41J2/335 , H01L21/3205 , H01L23/52 , H05K1/02
摘要： PURPOSE:To reduce the specific resitivity and to increase the permissible current density more than 10 times that of Al wiring, by using Cu substantially as the wiring material, and by coating the heat-proof metal, that is the alloy of W, Mo, Ti, Cr, Al and Al as the major base around the material.

45. 发明专利

JPS53107285A PRODUCTION OF WIRING STRUCTURAL BODY 失效
公开(公告)号：JPS53107285A
公开(公告)日：1978-09-19
申请号：JP2154077
申请日：1977-03-02
申请人： HITACHI LTD
发明人： SAIKI ATSUSHI , HONMA YOSHIO , HARADA YUKIYOSHI
IPC分类号： H01L21/768 , H01L21/302 , H01L21/3065 , H01L23/522
摘要： PURPOSE:To obtain multilayer wirings of good interlayer connection by forming a first metal conductor layer on a semiconductor substrate, covering said layer with an insulation film of organic high molecular resin, previding openings, etching the first metal conductor layer through letting inert gas ions collide under reduced pressure, and successively depositing a second conductor layer under reduced pressure.

46. 发明专利

JPS53105973A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS53105973A
公开(公告)日：1978-09-14
申请号：JP2021577
申请日：1977-02-28
申请人： HITACHI LTD
发明人： UEKI KAZUYOSHI , NISHIDA TAKASHI , SAIKI ATSUSHI , HARADA YUKIYOSHI
IPC分类号： H01L21/314 , H01L21/283
摘要： PURPOSE:To produce a stabilized protective film by laminating the high-molecule resin film through coating of the Si oxide or nitride on the substrate surface by the laser evaporation method or forming the layer in the opposite order to the above.

47. 发明专利

JPS5390886A WIRING STRUCTURE 失效
公开(公告)号：JPS5390886A
公开(公告)日：1978-08-10
申请号：JP492277
申请日：1977-01-21
申请人： HITACHI LTD
发明人： HONMA YOSHIO , NOZAWA HISAO , KACHI TADAO , HARADA YUKIYOSHI
IPC分类号： H05K3/46 , H01L21/768 , H01L23/522 , H01L29/41 , H05K1/00
摘要： PURPOSE:To reduce the distance between the center and the adjacent connecting parts, by making the connecting aperture contain more than two connecting parts.

48. 发明专利

JPS5349952A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5349952A
公开(公告)日：1978-05-06
申请号：JP12381176
申请日：1976-10-18
申请人： HITACHI LTD
发明人： SAIKI ATSUSHI , MUKAI KIICHIROU , YAMANAKA ICHISUKE , WADA YASUO , HARADA YUKIYOSHI , KAMOSHITA GENICHI
IPC分类号： H01L21/768 , H01L21/283 , H01L21/312 , H01L23/522
摘要： PURPOSE:To prevent the intrusion of the metal featuring a high diffusing performance by covering the semiconductor substrate with an imide group high molecular resin which contains one of P, B, F, C1 and As, and thus to obtain a semiconductor device.

49. 发明专利

JPS5336182A THIN SEMICONDUCTOR SINGLE CRYSTAL FILM FORMING INSULATION SUBSTRATE 失效
公开(公告)号：JPS5336182A
公开(公告)日：1978-04-04
申请号：JP10995776
申请日：1976-09-16
申请人： HITACHI LTD
发明人： NISHIDA TAKASHI , MIZUTANI TATSUMI , UEKI KAZUYOSHI , HARADA YUKIYOSHI
IPC分类号： H01L27/00 , C30B25/18 , C30B29/20 , H01L21/20 , H01L21/86
摘要： PURPOSE:To suppress the production of distortion of grown layer and facilitate dicing of elements after element forming by depositing a film such as of alpha-Al2O3 of 0.5 to 20mum in thickness on a Si single crystal substrate and epitaxially growing a specified semiconductor material through this thin film.

50. 发明专利

JPH07294699A TOTAL REFLECTIVE MIRROR DEVICE 失效
公开(公告)号：JPH07294699A
公开(公告)日：1995-11-10
申请号：JP12999095
申请日：1995-05-29
申请人： HITACHI LTD
发明人： HIRAI YASUHARU , HAYAKAWA KAZUNOBU , HARADA YUKIYOSHI
IPC分类号： G21K1/06 , H05H13/04
摘要： PURPOSE:To prevent the deterioration of a mirror surface irradiated with rays by driving it in the direction to have no influence on reflective characteristics from the outside of a vacuum vessel and displacing an area degenerated due to the irradiation of the rays from an optical path. CONSTITUTION:When synchrotron orbital radiation(SOR) is projected on a total reflective mirror 7, the optical axis of the emitted rays are adjusted by changing three freedom degrees (theta, phi, z) of SOR with a goniometer 9. However, due to the strong irradiation energy of SOR, degenerates the surface of the reflective mirror 7 is deteriorated for a short period, from six months to a year. Therefore, a vertically moving bar 2 and bellows 4 are driven with a handle 13 outside an ultra-high vacuum vessel 1 and the part irradiated by SOR is shifted by moving the reflective mirror 7 in the direction x (vertically), thereby a part which has not been degenerated yet is used one by one. In this process, a vertical slit 5, a horizontally long hole fixed on the vessel 1, and a horizontal slit 6, a vertically long hole fixed on the reflective mirror 7, are used. Consequently, the area irradiated by SOR and the optical axis can be maintained uniformly even if the reflective mirror 7 is moved in the direction x.

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