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    • 41. 发明专利
    • Electromagnetic surface treating apparatus
    • 电磁表面处理装置
    • JPS6138862A
    • 1986-02-24
    • JP15841384
    • 1984-07-28
    • Fuji Electric Co LtdFuji Electric Corp Res & Dev Ltd
    • TATENO MASAONOMA YOSHIISAKUBO YOSHIROYONEZAWA EIICHI
    • B24B31/112
    • B24B31/112
    • PURPOSE:To perform various surface treating by applying movable field onto non-magnetic treating container containing many operating members then applying impact of operating members onto an object to be treated inserted into the treating container through random motion of operating member caused by electromagnetic force based on the mutual function with the moving field. CONSTITUTION:An object to be treated or metallic material 1 is inserted to penetrate through a treating container 4 then movable magnetic fields phi1, phi2 are applied onto said container 4. Consequently, a rotary field synchronous with the power source frequency is produced through combination of said fields in said container thereby an operating member 7 is subjected to parallel advancing force in the moving direction of magnetic field, floating force and rotary torque by electromagnetic force based on the mutual function of said rotary field and said member 7 while additionally, the operating members 7 will collide each other and against the wall face of the container 4 thus to move the operating member 7 in random. At the same time, the operating member 7 will collide against the upper and lower faces of the metallic material 1 to perform surface treatment such as removal of rust, impurities, etc. through the collision impact and frictional function.
    • 目的:通过将可动场施加到包含许多操作构件的非磁性处理容器上进行各种表面处理,然后通过由电磁力引起的操作构件的随机运动将操作构件施加到待处理物体上的冲击, 与运动场的相互作用。 构成:将待处理物体或金属材料1插入穿过处理容器4,然后将可移动磁场phi1,phi2施加到所述容器4上。因此,与电源频率同步的旋转磁场通过 所述容器中的所述场,由此操作构件7基于所述旋转场和所述构件7的相互作用,通过电磁力在磁场,浮动力和旋转扭矩的移动方向上受到平行的前进力,而另外,操作 构件7将彼此碰撞并抵靠容器4的壁面,从而随机地移动操作构件7。 同时,操作构件7将碰撞金属材料1的上表面和下表面,以通过碰撞冲击和摩擦功能进行表面处理,例如除锈,杂质等。
    • 45. 发明专利
    • Electromagnetic treating device for grinding, mixing, agitation or the like
    • 用于研磨,混合,搅拌或类似的电磁处理装置
    • JPS58210837A
    • 1983-12-08
    • JP9385582
    • 1982-06-01
    • Fuji Electric Co LtdFuji Electric Corp Res & Dev Ltd
    • YONEZAWA EIICHITAKAHASHI TAKEO
    • B01F13/08B02C19/18
    • B01F13/0809
    • PURPOSE:To provide a titled treating device which improves the treatment performance for materials to be treated, by the constitution wherein the electricity to be supplied to a pair of shifting magnetic field generators in opposite directions provided with a treating device in-between is set at the frequencies differing from each other so as to eliminate the dead angle space in magnetic fields. CONSTITUTION:Electricity is supplied to a magnetic field generator 4 from a three- phase power source 9 through a frequency converter 10 such as a cycle converter or the like and the electricity is supplied directly to a magnetic field generator 5 in a device which subjects materials to be treated to grinding, mixing, agitation, etc. by contg. working pieces which are ferromagnetic or non-magnetic conductive materials and the materials to be treated such as solid, powder, liquid or the like in a treating vessel 1, and acting the shifting magnetic fields phi1, phi2 in opposite directions generated by a pair of the shifting magnetic field generators 4, 5 provided with said vessel in- between thereby inducing vigorous random motion in the working pieces. The formation of the dead angle spaces in the magnetic fields where the magnetic fields negate with each other in the vessel 1 is thus obviated and the interference of the motion of the working pieces is prevented.
    • 目的:提供一种提高待处理材料的处理性能的标题处理装置,其特征在于,将设置在其间的处理装置的向相反方向供给一对移动磁场发生器的电力设定在 频率彼此不同,以消除磁场中的死角空间。 构成:通过诸如循环转换器等的变频器10将电力从三相电源9提供给磁场发生器4,并且将电力直接供应到主体材料的装置中的磁场发生器5 待处理以进行研磨,混合,搅拌等。 在处理容器1中作为铁磁性或非磁性导电材料的工件和待处理材料如固体,粉末,液体等,并且由一对相反方向产生相反方向的移动磁场phi1,phi2 设置有所述容器的换档磁场发生器4,5在其间引起工作件中的剧烈随机运动。 因此,消除了在容器1中磁场相互抵消的磁场中的死角空间的形成,并且防止了工件的运动的干扰。
    • 46. 发明专利
    • MONITORING SYSTEM FOR SUPERCONDUCTIVE COIL
    • JPS5789206A
    • 1982-06-03
    • JP16561580
    • 1980-11-25
    • FUJI ELECTRIC CO LTDFUJI DENKI SOGO KENKYUSHO KK
    • NAGAE MASAOMIYONEZAWA EIICHIUEDA KAZUO
    • H01F6/02H02H7/06
    • PURPOSE:To monitor a transition to normal electric conduction by recording simultaneously a time change of a value obtained by dividing a voltage difference of coil parts at both ends of the superconductive coil by a coil current taking a middle point of the coil as a boundary. CONSTITUTION:A tap is led out from a middle point O between both end parts A, B of a superconductive coil 1. Voltage Ef between both ends A, B of the coil and a coil current If are led to an arithmetic part 10, and voltage E1 at the first half part AO and further voltage E2 at the latter half part BO are taken out by a diode bridge 21 and by a diode bridge 22 respectively to allow the difference voltage E1-E2 to be led into an arithmetic part 20 along with a coil current IF. And a value obtained by dividing the difference voltage E1-E2 by the current If is recorded on a recorder 30. Further, the arithmetic part 10 evaluates an internally generated resistance value to allow said resistance value to the recorded on the recorder 30. Hereby, an initiating location of the transition to be normal conduction and the expansion process can be grasped from a time change of the outputs of both arithmetic parts 10, 20.
    • 49. 发明专利
    • POWER SEMICONDUCTOR MODULE
    • JPH10163416A
    • 1998-06-19
    • JP32144096
    • 1996-12-02
    • FUJI ELECTRIC CO LTD
    • YONEZAWA EIICHI
    • H01L25/07H01L25/18
    • PROBLEM TO BE SOLVED: To provide a power semiconductor module of a combination of a power transistor and a free wheeling diode, which can improve a heat radiating performance by suppressing thermal interference between a transistor chip and a diode chip. SOLUTION: A set of chip elements of a power transistor 6 and a free wheeling diode 7 is mounted on an insulating substrate 5 to form a power circuit assembly. In the assembly, the transistor and diode chips are mounted on respective conductor patterns separatedly formed on the insulating substrate. More specifically, the transistor chip is solder-mounted on a collector conductor pattern 8. The diode chip is subjected at a major broader area of its anode electrode leading side with a solder mountable processing process, solder-mounted on an emitter conductor pattern 9 with the anode electrode directed toward the insulating substrate, and its cathode electrode and the collector conductor pattern are interconnected by means of a connecting conductor piece 12.