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46. 发明专利

JPS62171152A FORMING METHOD FOR RESISTOR 失效
公开(公告)号：JPS62171152A
公开(公告)日：1987-07-28
申请号：JP1247186
申请日：1986-01-23
申请人： NIPPON MUSICAL INSTRUMENTS MFG
发明人： OGATA TAKASHI , ISHIDA KATSUHIKO
IPC分类号： H01L21/3205 , H01L21/822 , H01L23/52 , H01L27/04
摘要： PURPOSE:To increase the resistance of a selected section in an amorphous silicide layer by a method wherein the amorphous silicide layer consisting of a high melting-point metal is formed onto a substrate, the silicide layer is crystallized through heat treatment, resistance is lowered and the silicide layer is changed into an amorphous state selectively. CONSTITUTION:An amorphous silicide layer 14 composed of a metal such as molybdenum is shaped onto an insulating film 12 through a sputtering method, etc., the silicide layer 14 is crystallized by executing heat treatment, and resistance is lowered to approximately several OMEGA/square as sheet resistance. An ion implanting section is turned into an amorphous state and resistance is increased by selectively implanting phosphorus ions to the silicide layer 14, using a photo-resist layer 16 as a mask, and a resistor 14R is shaped. The resistance of sections to which the ions are not implanted is left as it is low, and the sections are converted into electrodes (or wiring) sections 14A and 14B. The photo-resist layer 16 is removed.

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