专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明专利

JP2011034705A Plasma treatment device 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：JP2011034705A
公开(公告)日：2011-02-17
申请号：JP2009177406
申请日：2009-07-30
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： IORI KAZUYUKI , NAKAGAWA KOJIN
IPC分类号： H05H1/46 , C23C14/35 , C23C16/509
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment device capable of forming uniform high-density plasma at low pressure over a large area. SOLUTION: The device uses a cylindrical electrode as one in a plasma generating room opposed to a treatment substrate and arranges a magnetic field generating device at an atmosphere side for generating a point cusp magnetic field. Otherwise, one end of the cylindrical electrode is closed, and permanent magnets are arranged outside the closed site in a state of a ring so as directions of magnetic poles to be alternated and coaxial. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供能够在大面积上在低压下形成均匀的高密度等离子体的等离子体处理装置。解决方案：该装置在与处理基板相对的等离子体发生室中使用圆柱形电极，并在大气侧布置磁场产生装置，以产生点尖点磁场。否则，圆筒形电极的一端封闭，并且永久磁铁以环状的状态布置在封闭位置的外侧，以使得要交替和同轴的磁极方向。版权所有（C）2011，JPO＆INPIT

42. 发明专利

JP2011017088A Plasma treatment apparatus for applying sputtering film deposition 审中-公开
标题翻译：用于应用溅射膜沉积的等离子体处理装置
公开(公告)号：JP2011017088A
公开(公告)日：2011-01-27
申请号：JP2010215112
申请日：2010-09-27
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： SNIL WIKURAMANAYAKA , WATANABE EISAKU , NAGAHAMA HANAKO , SATO MAKOTO , MIZUNO SHIGERU
IPC分类号： C23C14/35 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a capacitive coupling type plasma treatment apparatus for sputtering film deposition, wherein an ion flux with a uniform high concentration is formed on the surface of a substrate, without causing re-deposition to a target.SOLUTION: The plasma treatment apparatus is equipped with: an upper electrode 1 provided with a capacitive coupling type mechanism; a target member 2 which is fitted to the upper electrode and made from a nonmagnetic substance; a plurality of magnets 6 which are arranged on the upper surface of the target member, and between the two of them, have equal distance and also have alternately changing magnetic pole polarities; a lower electrode 3 arranged in parallel with the upper electrode; a wafer 17 mounted on the lower electrode; and a high frequency power source 16 which is operated at a frequency in the range of 10 to 300 MHz and connected to the upper electrode via a matching circuit 15.
摘要翻译：要解决的问题：提供一种用于溅射膜沉积的电容耦合型等离子体处理装置，其中在基板的表面上形成具有均匀高浓度的离子通量，而不会引起对靶的再沉积。解决方案：等离子体处理装置配备有：设置有电容耦合型机构的上电极1; 目标构件2，其被安装到上部电极并由非磁性物质制成; 设置在目标构件的上表面上并且在它们中的两个之间的多个磁体6具有相等的距离并且还具有交替变化的磁极极性; 与上电极平行设置的下电极3; 安装在下电极上的晶片17; 以及高频电源16，其工作频率范围为10〜300MHz，经由匹配电路15与上电极连接。

43. 发明专利

JP2011014658A Electronic component manufacturing apparatus, alarm notification program, and alarm notification system 审中-公开
标题翻译：电子元件制造设备，报警通知程序和报警通知系统
公开(公告)号：JP2011014658A
公开(公告)日：2011-01-20
申请号：JP2009156299
申请日：2009-06-30
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： KONOSU TAKAHIRO
IPC分类号： H01L21/02
摘要： PROBLEM TO BE SOLVED: To locate a position where an abnormality has occurred, and to take measures against the cause of the abnormality in a short time.SOLUTION: An electronic component manufacturing apparatus which can display the occurrence of an abnormality in the apparatus on a display device and can inform the fact, detects the abnormality occurring in the apparatus, outputs alarm information for informing the occurrence of the abnormality, acquires the identification information for specifying the position where the abnormality has occurred based on the alarm information, and displays the whole image including the position where the abnormality has occurred and a detail image indicating the detail of the position, which are associated by the identification information on one screen of the display device simultaneously or continuously.
摘要翻译：要解决的问题：定位发生异常的位置，并且在短时间内对异常的原因采取措施。解决方案：一种电子部件制造装置，其可以在该装置上显示异常的发生显示装置，并且可以通知事实，检测装置中发生的异常，输出用于通知异常发生的报警信息，基于报警信息获取用于指定异常发生位置的识别信息，并且显示整个同时或连续地显示包括异常发生的位置的图像和指示与显示装置的一个屏幕上的识别信息相关联的位置的细节的详细图像。

44. 发明专利

JP2010272743A Substrate conveying device, and substrate processing device 审中-公开
标题翻译：基板输送装置和基板处理装置
公开(公告)号：JP2010272743A
公开(公告)日：2010-12-02
申请号：JP2009124337
申请日：2009-05-22
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： SUGI KYOSUKE
IPC分类号： H01L21/68 , B65G49/07
摘要： PROBLEM TO BE SOLVED: To adjust the direction of an orientation mark of a semiconductor substrate 2, in a conveyance chamber 1 without using a new driving system nor a dedicated processing chamber. SOLUTION: The conveyance chamber 1 having a conveying arm 9 driven to expand/contract, rotate, and move up/down, is provided with a substrate support member 10 wherein the conveying arm 9 moves down to transfer the semiconductor substrate 2 from a hand portion 9c of the conveying arm 9 and the conveying arm 9 moves up to transfer the transferred semiconductor substrate 2 to the hand portion 9c. Here, this substrate conveying device is characterized in that, the conveying arm 9 is elevated, after being rotated in a state that the conveying arm 9 is moved down and thereby the semiconductor substrate 2 is transferred onto a substrate support member 10 until the direction of the hand portion 9c is changed as specified with respect to the direction of the orientation mark, so as to transfer the semiconductor substrate 2 from the substrate support member 10 to the hand portion 9c. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：在不使用新的驱动系统和专用处理室的情况下，在输送室1中调整半导体基板2的取向标记的方向。解决方案：具有被驱动以扩展/收缩，旋转和上下移动的输送臂9的输送室1设置有基板支撑构件10，其中输送臂9向下移动以将半导体基板2从输送臂9的手部9c和输送臂9向上移动，将转印的半导体基板2转印到手部9c。这里，该基板输送装置的特征在于，在输送臂9向下移动的状态下，输送臂9升高后，将半导体基板2转印到基板支撑部件10上，手指部分9c相对于取向标记的方向改变，从而将半导体衬底2从衬底支撑构件10转移到手部9c。版权所有（C）2011，JPO＆INPIT

45. 发明专利

JP2010150668A Magnet unit, and magnetron sputtering device 有权
标题翻译： MAGNET UNIT和MAGNETRON SPUTTERING DEVICE
公开(公告)号：JP2010150668A
公开(公告)日：2010-07-08
申请号：JP2010041259
申请日：2010-02-26
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： ENDO TETSUYA , ABARRA EINSTEIN NOEL
IPC分类号： C23C14/35 , H05H1/46
CPC分类号： C23C14/35 , H01J37/3405 , H01J37/3452
摘要： PROBLEM TO BE SOLVED: To provide a magnet unit which can homogenize the thickness distribution of a thin film to be formed on a substrate, without increasing the length and width of a target. SOLUTION: The magnet unit 50 comprises an annular outer magnet 30 arranged over a yoke 20 on the back side of a cathode electrode and along the contour of a target 6, and an inner magnet 40 arranged in the annular outer magnet and made different in polarity from the outer magnet, whereby the tangents of magnetic lines of force M generated over the target form the magnetic tracks MT of a set of areas parallel to the target face. The magnet unit also comprises extending magnetic poles 41 of an n-number (n indicates a positive integer of 2 or more) extending from the central portion of the inner magnet and approaching the two longitudinal ends of the outer magnet, and protruding magnetic poles 32 of a (n-1)-number protruding longitudinally inward from the inner sides of the two ends of the outer magnet and positioned between the extending magnetic poles of the n-number. The extending magnetic poles of the n-number and the protruding magnetic poles of the (n-1)-number form folded-back sections U of a (2n-1)-number at the two longitudinal ends of the magnetic track. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种磁体单元，其能够均匀化待形成在基板上的薄膜的厚度分布，而不增加靶的长度和宽度。解决方案：磁体单元50包括环形外磁体30，其设置在阴极背面上的磁轭20上，并且沿着目标6的轮廓和布置在环形外磁体中的内磁体40 与外部磁体的极性不同，由此在目标上产生的磁力线M的切线形成平行于目标面的一组区域的磁迹MT。磁体单元还包括从内磁体的中心部分延伸并接近外磁体的两个纵向端的n数（n表示正整数为2或更大的）的磁极41，并且突出的磁极32 （n-1）个数从外磁体的两端的内侧向内侧突出并且位于n数的延伸磁极之间。在磁道的两个纵向端处，（n-1）个数字的n-1个延伸磁极和（n-1）个数字形式的折叠部分U（2n-1）数。版权所有（C）2010，JPO＆INPIT

46. 发明专利

JP2010150635A Continuous film deposition system and film deposition method using the same 审中-公开
标题翻译：连续膜沉积系统和使用其的膜沉积方法
公开(公告)号：JP2010150635A
公开(公告)日：2010-07-08
申请号：JP2008332692
申请日：2008-12-26
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： MORIWAKI TAKAYUKI
IPC分类号： C23C14/56 , B32B15/01 , C23C16/54
摘要： PROBLEM TO BE SOLVED: To provide a continuous film deposition system where not only the intrusion and diffusion of gas between respective spaces can be suppressed to the minimum by gas gate chambers but also the temperature of a beltlike substrate when being passed through the gas gate chambers can be adjusted.
SOLUTION: In the continuous film deposition system where a beltlike substrate 1 is passed through a plurality of film deposition chambers 11, 12 and gas gate chambers 21, 22, 23 while being continuously carried to a longitudinal direction so as to continuously deposit a deposition film on the beltlike substrate 1, the gas gate chambers 21, 22, 23 have slit-like separation passages 7 formed by temperature adjustment panels 4 arranged so as to face each other, and the temperature adjustment panels 4 have a plurality of planar bodies 5 on the faces at the sides of the slit-like separation passages 7.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种连续的膜沉积系统，其中不仅可以通过气体浇口室将各个空间之间的气体的入侵和扩散抑制到最小，而且通过带状衬底的温度气门室可调。解决方案：在带状基板1通过多个成膜室11,12和气体门室21,22,23的连续成膜系统中，同时连续地沿长度方向承载以连续沉积在带状基板1上的沉积膜，气体门室21,22,23具有由彼此相对配置的温度调节板4形成的狭缝状分离通道7，温度调节板4具有多个平面在狭缝状分离通道7的侧面上的表面上的主体5.版权所有（C）2010，JPO＆INPIT

47. 发明专利

JP2010150579A Sputtering apparatus 有权
标题翻译：溅射装置
公开(公告)号：JP2010150579A
公开(公告)日：2010-07-08
申请号：JP2008327696
申请日：2008-12-24
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： TAKIGUCHI SHOJI , UENO HIDEKI , TAKANO KOJI
IPC分类号： C23C14/34
CPC分类号： C23C14/352 , C23C14/3407 , H01J37/32568 , H01J37/3266 , H01J37/34
摘要： PROBLEM TO BE SOLVED: To provide a sputtering apparatus in which the angle of a target to a substrate can be adjusted. SOLUTION: The sputtering apparatus includes a freely rotatable rotary member 20 to which a target 12a, 12b, 12c is attached, connection terminals 25, 25b, 25c, and feeding terminals 22. The connection terminals 25a, 25b, 25c are arranged on the end portion of the rotary member 20 in a direction along the axis of rotation 10 of the rotary member 20, and are electrically connected to the target. The feeding terminals 22 supply electric power to the target 12a, 12b, 12c via the connection terminals 25a, 25b, 25c. When the rotary member 20 is rotated while the feeding terminals 22 are in contact with the end portion of the rotary member 20, the electrical connection or insulation state between the feeding terminals 22 and connection terminals 25a, 25b, 25c is switched. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以调节靶与基底的角度的溅射装置。解决方案：溅射装置包括可旋转的旋转构件20，目标12a，12b，12c连接到该旋转构件20，连接端子25,25b，25c和馈电端子22.连接端子25a，25b，25c布置在旋转构件20的沿着旋转构件20的旋转轴线10的方向的端部上，并且与目标电连接。馈电端子22经由连接端子25a，25b，25c向目标物12a，12b，12c供电。当旋转构件20在馈电端子22与旋转构件20的端部接触的同时旋转时，馈电端子22和连接端子25a，25b，25c之间的电连接或绝缘状态被切换。版权所有（C）2010，JPO＆INPIT

48. 发明专利

JP2010118648A Substrate processing apparatus and cleaning method of same 有权
标题翻译：基板加工装置及其清洗方法
公开(公告)号：JP2010118648A
公开(公告)日：2010-05-27
申请号：JP2009230993
申请日：2009-10-02
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： ABARA EINSTEIN NOEL , SHIBAMOTO MASAHIRO
IPC分类号： H01L21/304 , G11B5/84 , H01J37/305 , H01J37/317
CPC分类号： H01J37/317 , H01J37/32422 , H01J37/32568 , H01J37/32862 , H01J2237/022 , H01J2237/0822 , H01J2237/3156 , H01J2237/316
摘要： PROBLEM TO BE SOLVED: To provide a method of cleaning a substrate processing apparatus including ion beam generators arranged opposite to each other, and a substrate processing apparatus having this function.
SOLUTION: The method for cleaning the substrate processing apparatus in which a first and a second ion beam generators 1a, 1b are arranged opposite to each other across a plane S on which a substrate is to be placed, and which processes two surfaces of the substrate, includes steps of retreating the substrate from a position between the first ion beam generator 1a and the second ion beam generator 1b, and cleaning the second ion beam generator by emitting an ion beam from the first ion beam generator to the second ion beam generator.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种清洗包括彼此相对布置的离子束发生器的基板处理装置的方法和具有该功能的基板处理装置。解决方案：用于清洁基板处理装置的方法，其中第一和第二离子束发生器1a，1b彼此相对布置在待放置基板的平面S上，并且处理两个表面包括从第一离子束发生器1a和第二离子束发生器1b之间的位置退回衬底的步骤，以及通过从第一离子束发生器向第二离子发射离子束来清洁第二离子束发生器光束发生器。版权所有（C）2010，JPO＆INPIT

49. 发明专利

JP2010106370A Bias sputtering apparatus 审中-公开
标题翻译：偏移喷雾装置
公开(公告)号：JP2010106370A
公开(公告)日：2010-05-13
申请号：JP2010019909
申请日：2010-02-01
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： KOBAYASHI MASAHIKO
IPC分类号： C23C14/34
摘要： PROBLEM TO BE SOLVED: To allow the bias voltage to be normally applied to a substrate 9 even when the sputtering is often repeated in the sputtering for forming a conductive film while applying the bias voltage to the substrate.
SOLUTION: Gas such as argon gas is introduced into a sputtering chamber 1 by a gas introducing system 2, and the sputtering discharge is generated by applying the voltage to a target consisting of a conductive material by a sputter power source 4 while holding the substrate 9 by a substrate holder 5. The bias voltage is applied to the substrate 9 by a bias power source 52. The substrate holder 5 has a holder shield 53 diagonally behind a substrate holding surface as a member of the ground potential, and a recess 54 for preventing film continuity so as to prevent a deposition film 501 on a surface of the holder shield 53 from being continuous to a deposition film 504 on the substrate holding surface. A peripheral edge of the substrate holding surface is chamfered.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：即使当在用于形成导电膜的溅射中经常重复溅射同时向基板施加偏置电压时，也可以将偏压正常施加到基板9。解决方案：通过气体引入系统2将诸如氩气的气体引入到溅射室1中，并且通过溅射电源4将电压施加到由导电材料构成的靶，同时保持衬底9通过偏置电源52施加到衬底9.衬底保持器5具有作为接地电位的成员的衬底保持表面后方的保持器屏蔽53，并且用于防止膜连续性的凹部54，以防止保持器屏蔽53的表面上的沉积膜501与基板保持表面上的沉积膜504连续。衬底保持表面的周缘被倒角。版权所有（C）2010，JPO＆INPIT

50. 发明专利

JP2010106360A Substrate-holding apparatus, carrier, substrate treatment apparatus, and method for manufacturing image display apparatus 审中-公开
标题翻译：基板保持装置，载体，基板处理装置以及制造图像显示装置的方法
公开(公告)号：JP2010106360A
公开(公告)日：2010-05-13
申请号：JP2009215409
申请日：2009-09-17
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： INOUE MASAHITO , MATSUI SHIN , KATO YASUO
IPC分类号： C23C14/50
CPC分类号： H01J9/241
摘要： PROBLEM TO BE SOLVED: To surely control a condition of a carrier which holds a mask and a substrate by magnetically attracting the mask containing a magnetic material through the substrate.
SOLUTION: A substrate-holding apparatus 500 has the carrier 410 and a control section 420 for controlling the carrier 410. The carrier 410 includes a permanent electromagnet 101 and a first contact point 120a. The condition of the carrier is set either in a first condition in which the carrier holds the mask 200 and the substrate 300 or in a second condition in which the carrier does not hold the mask and the substrate, by controlling the polarity of a polarity-variable magnet of the permanent electromagnet 101. The control section 420 includes: the first contact point 120a; a detecting part that detects a contacting state of the first contact point 120a and the second contact point 121a which comes in contact with the first contact point 120a and supplies an electrical current to a coil of the permanent electromagnet 101; and an electric-current-supplying part 151 for supplying the electric current to the coil through the first contact point 120a and the second contact point 121a.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：通过磁性吸引含有磁性材料的掩模通过基板，可靠地控制保持掩模和基板的载体的状态。解决方案：基板保持装置500具有载体410和用于控制载体410的控制部分420.载体410包括永久电磁体101和第一接触点120a。载体的条件是在载体保持掩模200和基板300的第一状态下或在载体不保持掩模和基板的第二条件下设置，通过控制极性 - 永久电磁体101的可变磁体。控制部420包括：第一接触点120a; 检测部，其检测与第一接触点120a接触的第一接触点120a和第二接触点121a的接触状态，并向永磁电动机101的线圈供给电流; 以及用于通过第一接触点120a和第二接触点121a向线圈提供电流的电流供应部分151。版权所有（C）2010，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式