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41. 发明专利

JP2004038635A Programming method 审中-公开
标题翻译：编程方法
公开(公告)号：JP2004038635A
公开(公告)日：2004-02-05
申请号：JP2002195758
申请日：2002-07-04
申请人： Mitsubishi Electric Corp , Renesas Semiconductor Engineering Corp , 三菱電機株式会社 , 株式会社ルネサスセミコンダクタエンジニアリング
发明人： TERADA YUKA , TAKESAKO NORIHIRO
IPC分类号： G06F9/44
摘要： PROBLEM TO BE SOLVED: To provide a programming method for easily changing the condition of conditional branch, and a pre-existing processing regardless of special knowledge for a program, or an environment only by updating data of a database table.
SOLUTION: Whole processings to be performed by conditional branch are described as a condition program Program 01 in the programming method including a conditional branch processing which is performed differently by condition. Conditional branch concerning which processing is applied to a certain condition is defined in a database table DBT01 as a table form, and referred to. Then an item "formula" being the processing defined in the database table DBT01 is changed, so that the contents of the conditional branch processing are changed.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：仅通过更新数据库表的数据，提供用于容易地改变条件分支的条件的编程方法，以及不管程序的专门知识或环境的预先存在的处理。解决方案：由条件分支执行的整个处理被描述为编程方法中的条件程序程序01，其包括以条件不同地执行的条件分支处理。在数据库表DBT01中作为表格定义涉及哪个处理应用于特定条件的条件分支，并且被参考。然后，作为数据库表DBT01中定义的处理的项目“公式”被改变，使得条件分支处理的内容被改变。版权所有（C）2004，JPO

42. 发明专利

JP2004022318A Transmission electron microscope and sample analysis method 审中-公开
公开(公告)号：JP2004022318A
公开(公告)日：2004-01-22
申请号：JP2002175134
申请日：2002-06-17
申请人： Mitsubishi Electric Corp , Renesas Semiconductor Engineering Corp , 三菱電機株式会社 , 株式会社ルネサスセミコンダクタエンジニアリング
发明人： HASHIKAWA NAOTO , FURUTA MASAAKI
IPC分类号： G01N23/04 , G01N1/28 , G01N1/32 , G01N23/225 , H01J37/244 , H01J37/252 , H01J37/26 , H01J37/28 , H01J37/317
摘要： PROBLEM TO BE SOLVED: To accelerate and facilitate a series of processing from sample processing to TEM/STEM observation in TEM/STEM analysis. SOLUTION: With a transmission electron microscope including a focused ion beam radiation system 1 for processing a sample, and an electron beam irradiating system 2 and image forming systems 4, 5 for irradiating a thin portion 8 of the sample with an electron beam to image transmission electron, the sample 3 is processed by the focused ion beam radiation system 1 to form the thin portion 8 of the sample at the end of the sample, and, in the same chamber, the formed thin portion 8 of the sample is irradiated with the electron beam, at a prescribed angle, diagonally upward or downward to image the transmission electron for TEM/STEM observation. COPYRIGHT: (C)2004,JPO

43. 发明专利

JP3479221B2 Combustion apparatus 失效
公开(公告)号：JP3479221B2
公开(公告)日：2003-12-15
申请号：JP20971798
申请日：1998-07-24
申请人：三菱電機株式会社 , 株式会社ルネサスセミコンダクタエンジニアリング
发明人：和也井上 , 孝友福本 , 嘉彦草壁 , 昌也谷尾 , 昭治高原
IPC分类号： F22B3/02 , H01L21/31

44. 发明专利

JP2003288797A Nonvolatile semiconductor memory device 审中-公开
标题翻译：非易失性半导体存储器件
公开(公告)号：JP2003288797A
公开(公告)日：2003-10-10
申请号：JP2002090074
申请日：2002-03-28
申请人： Mitsubishi Electric Corp , Renesas Semiconductor Engineering Corp , 三菱電機株式会社 , 株式会社ルネサスセミコンダクタエンジニアリング
发明人： SUGIURA KAZUFUMI , FUJIWARA TAKANORI
IPC分类号： G11C16/06 , G11C29/00 , G11C29/04 , G11C29/12
摘要： PROBLEM TO BE SOLVED: To obtain a nonvolatile semiconductor memory device in which a defect bit can be repaired using conventional memory test equipment not having a repair analysis device. SOLUTION: At a final test time to be implemented after packaging, data read from a nonvolatile memory cell 14 is compared with an expected value by a comparison determination part 2, and as a result, the address determined as a defect is stored in an NG address storage register 1. Then, the setting of a spare replacement decoder is made to replace the defect nonvolatile memory cell is replaced by a spare cell using the address stored in the NG address storage register 1 by an FT replace and write part 3. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了获得使用不具有修理分析装置的常规存储测试设备可以修复缺陷位的非易失性半导体存储器件。解决方案：在包装后要实施的最终测试时间，从非易失性存储单元14读取的数据与比较确定部分2的期望值进行比较，结果，存储被确定为缺陷的地址然后，通过FT替换和写入部分，使用存储在NG地址存储寄存器1中的地址，将备用替换解码器的设置替换为由备用单元替换的缺陷非易失性存储单元 3.版权所有（C）2004，JPO

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