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31. 发明专利

JP3102358B2 失效
公开(公告)号：JP3102358B2
公开(公告)日：2000-10-23
申请号：JP21565996
申请日：1996-08-15
IPC分类号： H01G4/12 , H01G4/005 , H01G4/06 , H01G4/255 , H01G4/30 , H01G5/00 , H01G5/01 , H01G5/06

32. 发明专利

JP3045573B2 失效
公开(公告)号：JP3045573B2
公开(公告)日：2000-05-29
申请号：JP20694991
申请日：1991-08-19
IPC分类号： H01G4/06 , H01G4/40 , H01G13/00 , H03H7/01
摘要： A highly reliable electrical component, a plurality of such electrical components, and a method for manufacturing the electrical component and the plurality thereof with high productivity are provided. The plurality involves a dielectric substrate including multiple separable chips. Each of the chips is provided with two parallel winding grooves, into which pasted copper is filled under a reduced pressure, dried and solidified to form electrical conductors. By connecting pins to ends of the electrical conductors, capacitors or noise filters are obtained. The plurality is manufactured, tested, packaged and transported, before being divided into separate chips for use.

33. 发明专利

JP2000504502A 失效
公开(公告)号：JP2000504502A
公开(公告)日：2000-04-11
申请号：JP52538198
申请日：1997-10-20
IPC分类号： H01G4/12 , H01G4/008 , H01G4/06 , H01G4/30

34. 发明专利

JP2985344B2 失效
公开(公告)号：JP2985344B2
公开(公告)日：1999-11-29
申请号：JP7624791
申请日：1991-04-09
申请人： MATSUSHITA DENKI SANGYO KK
发明人： KOJIMA JUNJI , OONISHI YOICHI , HAGA MIKIO
IPC分类号： H01G4/33 , H01G4/06 , H01G4/30

35. 发明专利

JPH11168193A FERROELECTRIC STORAGE DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH11168193A
公开(公告)日：1999-06-22
申请号：JP33329197
申请日：1997-12-03
申请人： NEC CORP
发明人： SHINOHARA SOTA
IPC分类号： H01L29/40 , H01G4/06 , H01L21/8242 , H01L21/8246 , H01L21/8247 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To raise the data rewrite life of a ferroelectric storage device and the reliability of the storage holding characteristic of the device by a method, wherein the upper electrode of the device is constituted of an alloy containing a noble metal and a group VIII element oxide. SOLUTION: A ferroelectric storage device is constituted of a structure, wherein a ferroelectric capacitor element 21 is connected with a field-effect transistor 4 which is a memory cell transistor, as a unit memory cell and the device is constituted of a P-type Si substrate 1, the field-effect transistor 4, an interlayer insulating film 7, the ferroelectric capacitor element 21 and a protective film 22. The element 21 has a constitution, wherein the element 21 comprises a lower electrode 23, an upper electrode 24 and a ferroelectric film 12 held between these electrodes 23 and 24. The electrode 24 is constituted of an alloy containing a noble metal and a group VIII element oxide, more specifically, one kind of a material or more than two kinds of materials selected from among an alloy containing platinum and an iridium oxide, an alloy containing platinum and a palladium oxide, an alloy containing platinum and a ruthenium oxide and an alloy containing platinum and an osmium oxide.

36. 发明专利

JP2874120B2 失效
公开(公告)号：JP2874120B2
公开(公告)日：1999-03-24
申请号：JP33196691
申请日：1991-12-16
申请人： EICHI II HOORUDEINGUSU INC DEII BII EE HYUUZU EREKUTORONIKUSU
发明人： HARU DEII SUMISU , ROBAATO EFU MAKURANAHAN , ANDORUU EE SHAPIRO , JOOJI PERUTSUMAN
IPC分类号： H01G4/06 , H01G4/33 , H01L21/822 , H01L27/04 , H05K1/03 , H05K1/09 , H05K1/16 , H05K3/46

37. 发明专利

JP2834198B2 失效
公开(公告)号：JP2834198B2
公开(公告)日：1998-12-09
申请号：JP18556089
申请日：1989-07-18
申请人： MATSUSHITA DENKI SANGYO KK , NIPPON SHINKU GIJUTSU KK
发明人： HAGA MIKIO , KINUTA YUKIO , TAKAHASHI YOSHIKAZU , IIJIMA MASAYUKI
IPC分类号： H01G4/33 , H01G4/06 , H01G4/18 , H01G4/30

38. 发明专利

JP2817372B2 失效
公开(公告)号：JP2817372B2
公开(公告)日：1998-10-30
申请号：JP20208790
申请日：1990-07-30
IPC分类号： H01G4/008 , H01G4/06 , H01G4/255 , H01G4/33

39. 发明专利

JPH1083935A CAPACITOR AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH1083935A
公开(公告)日：1998-03-31
申请号：JP26029396
申请日：1996-09-09
申请人： TAIYO YUDEN KK
发明人： AOYANAGI TAKUJI , TATSUNO TETSUO
IPC分类号： H01G4/12 , H01G2/12 , H01G4/005 , H01G4/06 , H01G4/228 , H01G4/248 , H01G4/252 , H01G4/38 , H01G13/00
摘要： PROBLEM TO BE SOLVED: To make it possible to form gaps of a constant width with high accuracy even by the so-called dip coating that both ends of a capacitor element are dipped in a conductive paste to coat the conductive paste on both ends of the element and moreover, to prevent the exterior diameter of an insulating coating from being made large and also to make it possible to obtain the high value of the electrostatic capacitance of a capacitor. SOLUTION: A capacitor is formed into such a structure that such step parts 15 and 16 as to fall in both sides of parts, which form gaps 13 provided in a capacitor element 11, are formed and when a conductive paste is performed a dip coating, the coating of the paste is stopped in the parts by the fall-in of these step parts 15 and 16. By adhering a conductor film also on these step parts 15 and 16, the edges of electrodes 12 and 12, which consist of the conductor film, not only are butted to each other holding the gaps 13 between them but also opposed electrodes are formed on the parts of the step parts 15 and 16 in the electrodes 12 and 12, whereby the higher value of the electrostatic capacitance of the capacitor is obtained. Moreover, when a resin is applied on the parts for forming an insulating coating 14, this resin intrudes into the step parts 15 and 16. As a result, the external diameter of the insulating coating 14 is not made large extremely.

40. 发明专利

JPH1036688A POLYMERIZABLE COMPOUND FOR SOLID POLYELECTROLYTE CAPACITOR, SOLID POLYELECTROLYTE CAPACITOR MADE BY USING THE SAME, AND ITS USE 失效
公开(公告)号：JPH1036688A
公开(公告)日：1998-02-10
申请号：JP19223196
申请日：1996-07-22
申请人： SHOWA DENKO KK
发明人： TAKEUCHI MASATAKA , UCHIJIYOU SHIYUUICHI , OOHATA ERI
IPC分类号： C08L71/02 , C08F290/00 , C08F299/00 , C08L71/00 , C08L101/00 , H01B1/12 , H01G4/06 , H01G9/025 , H01G11/14 , H01G11/22 , H01G11/38 , H01G11/44 , H01G11/52 , H01G11/56 , H01G11/84 , H01G11/86 , H01M6/18 , H01M10/05 , H01M10/052 , H01M10/0565 , H01M4/02 , H01M10/40
摘要： PROBLEM TO BE SOLVED: To obtain a polymerizable compound which can give a solid polyelectrolyte improved in strengths, low-temperature ionic conductivity, processability, heat resistance and strong-current characteristics by mixing a specified polymer with an electrolyte. SOLUTION: An actinic-radiation-polymerizable compound derived by introducing at least two polymerizable functional groups represented by formulas I and/or II (R and R are each H or an alkyl; R and R to R are each linear, branched or cyclic 10C or lower divalent organic groups which may contain a hetero atom; and x is 0-10) is mixed with at least one electrolyte selected among alkali metals, quat. ammonium salt, quat. phosphonium salts and transition metals and used in an amount at most 10 times the weight of the compound, and the resulting mixture is polymerized by heating and/or irradiation with an actionic radiation in the presence (or absence) of a radical polymerization catalyst in an oxygen-free atmosphere to obtain a solid polyelectrolyte containing a crosslinked or side-chain-type structure polymer and an electrolyte.

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