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31. 发明专利

JP2006269926A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2006269926A
公开(公告)日：2006-10-05
申请号：JP2005088527
申请日：2005-03-25
申请人： Fujitsu Ltd , 富士通株式会社
发明人： AKIYAMA TOMOYUKI
IPC分类号： H01S5/0625
CPC分类号： H01S5/0625 , H01S5/0602 , H01S5/0683 , H01S5/5018 , H01S5/5027
摘要： PROBLEM TO BE SOLVED: To enable integration of a semiconductor light amplifier and an element used for automatic gain control or automatic power control without incurring waveform distortion or deterioration of a noise characteristic, and also to enable achievement of the automatic gain control or the automatic power control in response to a change in the power of input signal light. SOLUTION: A semiconductor comprises a semiconductor laminate 1 disposed between a p-type semiconductor layer 12 and an n-type semiconductor layer 10 to have a plurality of regions along an active layer 11, a plurality of electrodes 2 provided on the p- or n-type semiconductor layer on the plurality of regions in a 1:1 relation, and a switch 4 connected to at least one of the plurality of electrodes for switching a bias voltage application direction. When the switch 4 is switched to its one terminal, a forward bias voltage is applied via an electrode 2A to form an amplification region 14A. When the switch 4 is witched to the other terminal, a reverse voltage is applied via an electrode 2B to form an attenuation region 14B. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了实现半导体光放大器和用于自动增益控制或自动功率控制的元件的集成，而不会引起波形失真或噪声特性的劣化，并且还能够实现自动增益控制或响应于输入信号光的功率变化的自动功率控制。解决方案：半导体包括设置在p型半导体层12和n型半导体层10之间以在有源层11上具有多个区域的半导体层叠体1，设置在p型半导体层12上的多个电极2 1或1相关的多个区域中的至少一个或n型半导体层，以及连接到所述多个电极中的至少一个用于切换偏置电压施加方向的开关4。当开关4切换到其一个端子时，经由电极2A施加正向偏置电压以形成放大区域14A。当开关4与另一端子相连时，经由电极2B施加反向电压以形成衰减区域14B。版权所有（C）2007，JPO＆INPIT

32. 发明专利

JP3653169B2 Gallium nitride-based semiconductor laser element 失效
公开(公告)号：JP3653169B2
公开(公告)日：2005-05-25
申请号：JP1223898
申请日：1998-01-26
申请人：シャープ株式会社
发明人：敏之奥村
IPC分类号： H01S5/00 , H01S5/06 , H01S5/065 , H01S5/22 , H01S5/223 , H01S5/323 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/0602 , H01S5/0658 , H01S5/22 , H01S5/2219 , H01S5/2222 , H01S5/2231 , H01S5/34333

33. 发明专利

JPS6139643A Light transmitting device 失效
标题翻译：光传输设备
公开(公告)号：JPS6139643A
公开(公告)日：1986-02-25
申请号：JP15982384
申请日：1984-07-30
申请人： Nec Corp
发明人： MITO IKUO
IPC分类号： H04B10/60 , G02F3/02 , H01S5/06 , H01S5/062 , H01S5/12 , H01S5/227 , H04B10/00 , H04B10/2513 , H04B10/40 , H04B10/50
CPC分类号： H01S5/0601 , G02F3/026 , H01S5/0602 , H01S5/06216 , H01S5/12 , H01S5/227 , H01S5/2275
摘要： PURPOSE: To prevent wavelength dispersion due to high-speed direct modulation in a bistable distribution feedback type semiconductor laser, by utilizing the fact that displacement of oscillation frequency near the current value is small even when oscillation is made by increased injected current.
CONSTITUTION: Bias current Ib of 48mA which is smaller than the threshold value (50mA) at the time of turning-off of a bistable distribution feedback type semiconductor laser (DFBLD) is applied from a bias circuit section 21 to the DFBLD20. Pulse current Ip of crest value 15mA which becomes larger than the threshold value (60mA) at the time of turning-on of DFBLD20 is applied from a driving circuit section 22 corresponding to the input signal. When the light transmitting device is operated by using a signal of clock frequency 450MHz as an input signal, the DFBLD20 generates light signal pulses following up the input signal.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：为了防止在双稳态分布反馈型半导体激光器中由于高速直接调制引起的波长色散，通过利用即使当注入电流增加进行振荡时，接近电流值的振荡频率位移也很小的事实。构成：从偏置电路部21向DFBLD20施加比双稳态分布反馈型半导体激光器（DFBLD）断开时小的阈值（50mA）的48mA的偏置电流Ib。从对应于输入信号的驱动电路部分22施加大于DFBLD20导通时的阈值（60mA）的波峰值15mA的脉冲电流Ip。当通过使用时钟频率450MHz的信号作为输入信号来操作发光装置时，DFBLD20产生跟随输入信号的光信号脉冲。

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