专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明专利

JPH0337754B2 失效
公开(公告)号：JPH0337754B2
公开(公告)日：1991-06-06
申请号：JP1935882
申请日：1982-02-09
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： HANABUSA AKIRA , OMURA KUNYOSHI , KITA JUTARO , KITAMURA HIROYUKI , MUROZONO MIKIO
IPC分类号： H01L31/042 , H01L31/02 , H01L31/048

32. 发明专利

JPH01248674A MANUFACTURE OF PHOTOVOLTAIC ELEMENT 失效
公开(公告)号：JPH01248674A
公开(公告)日：1989-10-04
申请号：JP7672188
申请日：1988-03-30
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MORI KOSHIRO , HANABUSA AKIRA , SAITO YASUHIRO , OSAWA MICHIO
IPC分类号： H01L31/042 , H01L31/04
摘要： PURPOSE:To decrease manhours by simultaneously cutting a first substrate, a second substrate for protecting the surface and a third substrate for reinforcement and holding and arraying a plurality of solar cells singly separated on a fourth substrate in a matrix manner. CONSTITUTION:All of laminated substrates up to first - third substrates 1-3 except a fourth substrate 4 are cut into laminated multi-layer boards, and a plurality of independently detached photovoltaic element 5 are arranged and held onto the fourth substrate 4, thus manufacturing the title photovoltaic element. When a solar cell is used as the photovoltaic element 5, terminal sections 6 at a positive pole and a negative pole are fitted at both ends of the photovoltaic element normally, and leads are led out to the terminal sections 6 through a heat seal method and soldering. The leads can be led out in such a manner that sections laminated onto the terminal sections and superposed to the terminal sections are employed previously as opening sections 7 in the second - fourth substrates 2-4 laminated onto the first substrate. Accordingly, the manufacture of the photovoltaic element in which processes are treated continuously by the substrates in large size is acquired, thus reducing the complicatedness of the treatment of each photovoltaic element in conventional devices and the manhours.

33. 发明专利

JPH01169973A INTEGRAL TYPE ELEMENT OF AMORPHOUS SOLAR CELL AND THIN-FILM SECONDARY BATTERY 失效
公开(公告)号：JPH01169973A
公开(公告)日：1989-07-05
申请号：JP32855187
申请日：1987-12-24
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： HANABUSA AKIRA , SAITO YASUHIRO , OSAWA MICHIO , ONO MASAHARU , MORI KOSHIRO
IPC分类号： H01L31/046 , H01M10/0562 , H01M10/46
摘要： PURPOSE:To use a transmitting-light surface side electrode for an amorphous solar cell and a cathode side lead electrode for a thin-film secondary battery in common by using carbon paste as negative-electrode side leads for the amorphous solar cell and the thin-film secondary battery. CONSTITUTION:A transparent conductive film 2 is deposited on a light- transmitting insulating substrate 1, and thereafter a P-type amorphous silicon layer 3, an I-type amorphous silicon layer 4 and an N-type amorphous silicon layer 5 are deposited successively. Carbon paste is applied and dried by screen- printing as the conductive film 2 and a cathode side lead 6 for a thin-film secondary battery. A cathode 7 composed of copper Chevrel, a copper group solid electrolyte 8 and a positive electrode 9 consisting of copper Chevrel are shaped in succession through screen-printing, and a anode side lead 10 made of carbon paste is formed. Consequently, the integral type element of an amorphous solar cell 12 passivated by an epoxy resin 11 and the thin-film secondary battery 13 is shaped. Accordingly, a transmitting-light surface side electrode for the cell 12 and a negative-electrode side lead electrode for the battery 13 are used in common.

34. 发明专利

JPH01152767A MANUFACTURE OF THIN-FILM SOLAR CELL 失效
公开(公告)号：JPH01152767A
公开(公告)日：1989-06-15
申请号：JP31273987
申请日：1987-12-10
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OSAWA MICHIO , SAITO YASUHIRO , HANABUSA AKIRA , MORI KOSHIRO , ONO MASAHARU
IPC分类号： H01L31/04
摘要： PURPOSE:To eliminate the need for a metallic mask, and to reduce even the cost of a pattern material by drawing and applying a pasty complex such as clay onto substrate directly and patterning the complex through a lift-off. CONSTITUTION:A pasty complex 3 such as clay is applied onto a substrate 1 according to a desired pattern in place of the usage of a metallic mask, a thin-film is formed onto the complex 3, and the pasty complex 3 such as clay is removed, thus acquiring the desired pattern of a thin-film through a lift-off. Consequently, the accuracy of patterning is determined by line width capable of being applied by the directly drawing pasty complex such as clay, thus largely improving the accuracy. A large-area substrate incapable through a metallic mask method is also patterned easily. Patterning is conducted by the pasty complex such as clay and water, thus also reducing running cost.

35. 发明专利

JPS6417483A DC POWER SOURCE 失效
公开(公告)号：JPS6417483A
公开(公告)日：1989-01-20
申请号：JP17355787
申请日：1987-07-10
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： ONO MASAHARU , SAITO YASUHIRO , MORI KOSHIRO , HANABUSA AKIRA , OSAWA MICHIO , ARITA TAKASHI
IPC分类号： H01L31/042 , H01L31/04 , H02J7/35
摘要： PURPOSE:To step up an input voltage without converting it into an AC signal by connecting light emitting diodes in parallel and disposing light emitting faces opposite to the photodetecting surface of generating means. CONSTITUTION:An amorphous silicon thin film 8 and an aluminum rear face electrode 9 formed in a P-I-N junction to a transparent electrode 7 are sequentially formed on a glass substrate 6, and 100 pieces of amorphous thin film solar cells SB1-SB100 are formed at a pitch of 0.5mm with the width of 5mm. Then, 20 high intensity light emitting diodes LED1-LED10 are arranged at a pitch of 5mm on a printed substrate 16 on which conductor circuits 14, 15 are printed, connected in parallel by wire bonding to form light emitting means. Transparent resin, such as epoxy resin is filled to be bonded between the substrate 5 of the photodetecting side of the cells SB1-SB100 and the substrate 16 for forming light emitting means.

36. 发明专利

JPS63289970A SOLAR BATTERY POWER SOURCE 失效
公开(公告)号：JPS63289970A
公开(公告)日：1988-11-28
申请号：JP12625987
申请日：1987-05-22
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： ONO MASAHARU , MORI KOSHIRO , HANABUSA AKIRA , OSAWA MICHIO , ARITA TAKASHI
IPC分类号： H01L31/04 , G05F1/67
摘要： PURPOSE:To obtain a small-scaled solar battery power source which has a small forward dark current and is capable of rapid charge-and-discharge without a backward flow-resisting diode accompanied by voltage loss, by introducing an element, for use in enlarging a band gap, to either a P layer or an N layer so that it is substituted partially for Si to form an amorphous silicon solar battery and next by connecting a capacitor with this solar battery. CONSTITUTION:An element for use in enlarging a band gap is introduced to at least either a P layer or an N layer in PIN junction so that it is substituted partially for Si to form an amorphous silicon solar battery 7. A capacitor 5 of 1mF to 10F in its capacitance is connected with this solar battery without using a backward flow-resisting diode. As shown in a figure, for example, an electric double layer capacitor 5, a constant voltage diode 6, and an amorphous silicon solar battery 7 are connected to each other without using the backward flow-resisting diode. The amorphous silicon solar battery 7 is formed as follows: C, N, or H is introduced 5 to 50% to the P or N layer so that it is substituted for Si, and next CH4, C2H2, or the like is mixed into SiH4 upon the forming of the P or N layer so that Si-C or C-H coupling is increased to enlarge the gap.

37. 发明专利

JPS63207182A MANUFACTURE OF AMORPHOUS SOLAR BATTERY 失效
公开(公告)号：JPS63207182A
公开(公告)日：1988-08-26
申请号：JP4084287
申请日：1987-02-24
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： HANABUSA AKIRA , ARITA TAKASHI , OSAWA MICHIO , ONO MASAHARU , MORI KOSHIRO , AOKI HIROMICHI
IPC分类号： H01L31/04
摘要： PURPOSE:To decrease the number of working processes by removing a titanium layer through scribing by a metallic piece, etc., without using a resist and getting rid of an aluminum layer through etching. CONSTITUTION:An amorphous silicon film 3 is patterned, a comparatively soft I metallic thin-film 4 is deposited, a II metallic thin-film 5 harder than the I metallic thin-film 4 is deposited, the whole II metallic thin-film 5 in a section to be taken off mechanically and one part of the I metallic thin-film 4 in the section are removed, and the whole is dipped into an etchant dissolving only the I metal 4. Consequently, the soft I metallic thin-film 4 reduces force applied to the amorphous silicon film 3 at the time of scribing on scribing by a metallic piece, etc., force is concentrated to the hard II metallic thin-film 5, and force is applied in the direction of scribing, thus damaging no amorphous film 3, then scribing the II metallic thin-film 5 up to a section near the interface of the II metallic thin-film 5 and the I metallic thin-film 4. The I metallic film 4 left in a scribing section is dipped into a liquid etching only the I metallic film 4, and gotten rid of selectively, thus acquiring a predetermined pattern.

38. 发明专利

JPS63147374A MANUFACTURE OF THIN FILM SOLAR CELL 失效
公开(公告)号：JPS63147374A
公开(公告)日：1988-06-20
申请号：JP29524886
申请日：1986-12-11
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OSAWA MICHIO , ARITA TAKASHI , HANABUSA AKIRA , MORI KOSHIRO , AOKI HIROMICHI
IPC分类号： H01L31/04 , H01L21/302 , H01L21/3065 , H01L21/461 , H01L27/142
摘要： PURPOSE:To eliminate thermal damage to thin films in the case of patterning by a method wherein, after the various thin films for constituting a thin film solar cell are formed on a supporting substrate, the thin films are selectively peeled off by an ultrasonic processing needle. CONSTITUTION:Various thin films for constituting a thin film solar cell are formed on a supporting substrate 1, then the above thin films are selectively peeled off by an ultrasonic processing needle 5. For example, a transparent electrode layer 2 is formed on the glass substrate 1 by a vacuum deposition and so on. Then, the ultrasonic processing needle 5 connected to an ultrasonic oscillator is applied to the film surface and is made to shift while being made to oscillate and the transparent electrode layer 2 is continuously peeled off and patterned linearly. Moreover, an amorphous Si layer 3, which is used as a photoelectric conversion layer, is formed thereon by laminating in order a P-type layer and an N-type layer in such a way that a P-I-N junction is formed by a plasma CVD method and so on. Then, the amorphous Si layer 3 is shaved by the ultrasonic processing needle 5 like the pattern of the transparent electrode layer 2 and the amorphous Si layer 3 is formed on the transparent electrode layer 2.

39. 发明专利

JPS63127580A THIN-FILM SOLAR CELL 失效
公开(公告)号：JPS63127580A
公开(公告)日：1988-05-31
申请号：JP27325086
申请日：1986-11-17
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MORI KOSHIRO , ARITA TAKASHI , HANABUSA AKIRA , ONO MASAHARU , OSAWA MICHIO
IPC分类号： H01L31/04
摘要： PURPOSE:To simplify a manufacturing process, and to reduce cost by forming a first electrode, N-type amorphous Si, I-type amorphous Si and P-type amorphous Si onto a substrate in succession, changing one part of a P-type amorphous Si layer into an oxide, a nitride or a carbide and shaping a second electrode onto a transform. CONSTITUTION:Thin-film layers of a first electrode 2, N-type amorphous Si 3, I-type amorphous Si 4 and P-type amorphous Si 5 are formed onto a substrate 1 in succession, one part of the P-type Si amorphous Si layer 3 is converted into an oxide, a nitride or a carbide, such as SiO2, Si3N4 or SiC by thermally treating or plasma-treating the thin-film layers in the atmosphere of O2, N2, CH 4, CO or CO2 or the like, and a second electrode 7 is shaped onto the oxide, the nitride or the carbide. Accordingly SiO2, etc., need not be laminated anew onto the P-type amorphous Si layer 5, thus simplifying a manufacturing process, then reducing manufacturing cost.

40. 发明专利

JPS6358975A THIN FILM SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6358975A
公开(公告)日：1988-03-14
申请号：JP20407186
申请日：1986-08-29
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： ONO MASAHARU , MORI KOSHIRO , HANABUSA AKIRA , ARITA TAKASHI , OSAWA MICHIO
IPC分类号： H01L27/14 , H01L27/12 , H01L29/78 , H01L29/786 , H01L31/10
摘要： PURPOSE:To facilitate forming thin film semiconductor devices on one substrate with small sizes and a low cost by a method wherein a plurality of thin film photodetectors and a thin film transistor which constitute a logic circuit are formed on the one substrate and the output terminal of the thin film photodetectors which are connected in series or in parallel is connected to the gate electrode of the thin film transistor on the substrate. CONSTITUTION:A gate electrode 2 formed by evaporation of Cr, NiCr or the like and a gate insulating film 3 made of silicon nitride, silicon oxide or the like are provided on a substrate 1. Then the lower electrodes 4 and 5 of thin film photodiodes are formed and the lower electrode 4 is connected to the gate electrode 2 on the substrate. A semiconductor thin film 6 made of amorphous silicon hydride is formed on the gate insulating film 3. Semiconductor thin films 7 and 8 made of amorphous silicon hydride, amorphous germanium hydride, amorphous silicon germanium hydride or the like are formed on the lower electrodes 4 and 5 in the order of P-type layers, I-type layers and N-type layers. Then a source electrode 9 and a drain electrode 10 are formed and, at the same time, the upper electrodes 11 and 12 of the thin film photodiodes are formed and the upper electrode 11 is connected to the lower electrode 5 and the upper electrode 12 is connected to the source electrode 9.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式