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    • 31. 发明专利
    • PHOTOSENSITIVE BODY
    • JPS60235147A
    • 1985-11-21
    • JP9206384
    • 1984-05-09
    • KONISHIROKU PHOTO IND
    • YAMAZAKI TOSHIKISAKAI EIICHINAKANISHI TATSUONOMORI HIROYUKI
    • G03G5/04G03G5/08G03G5/14
    • PURPOSE:To improve surface characteristics, photosensitivity, and electrostatic charging characteristics by forming a P type charge blocking layer, a charge transfer layer, a charge generating layer, and a surface modifying layer contg. a specified amt. of oxygen, for which each layer is made of a specified a-Si type, on a substrate in succession. CONSTITUTION:The P type blocking layer 44 made of a-SiC and/or a-SiN, the charge transfer layer 42 made of a-SiC and/or a-SiN, the charge generating layer 43 made of a-Si, and the surface modifying layer 45 made of SiC contg. O in an amt. of 1-20atomic% of Si+C+O, in which Si of each layer is hydrogenated and/or fluorinated, are formed on the substrate 41, in thi order from its side. The layer 45 contains C in an amt. of 10-70atomic%, the layer 42 is light-doped with an element of group IIIa, and the layer 44 contains C or N in an amt. of 10-30atomic%. The use of such a structure enhances surface characteristics of the photosensitive body such as chemical stability, mechanical strength, and heat resistance, improves photosensitivity and potential retaintivity, and it can reduce tendency of creeping electric discharge.
    • 32. 发明专利
    • PHOTOSENSITIVE BODY
    • JPS60203958A
    • 1985-10-15
    • JP5972884
    • 1984-03-28
    • KONISHIROKU PHOTO IND
    • YAMAZAKI TOSHIKISAKAI EIICHINAKANISHI TATSUONOMORI HIROYUKI
    • G03G5/04G03G5/08
    • PURPOSE:To retain stably the high electrostatic charge potential of a photosensitive body and to provide satisfactory optical fatigue characteristics and suitability to negative electrostatic charge by incorporating a specified amount of O into the charge transferring layer of hydrogenated and/or fluorinated a-SiC formed under the charge generating layer of hydrogenated and/or fluorinated a-Si. CONSTITUTION:A charge transferring layer 42 of amorphous hydrogenated and/ or fluorinated silicon carbide is formed under a charge generating layer 43 of amorphous hydrogenated and/or fluorinated silicon, and 50-500ppm O (Si+C= 100atom%) is incorporated into the layer 42 to obtain a separated function type photosensitive body. By incorporating 50-500ppm O into the layer 42, the charge retentivity (dark resistance) is effectively increased without reducing the charge transferring power, and the temp. dependency of the dark resistance can be controlled. Accordingly, it is necessary to set the O content at 50-500ppm, desirably 70-300ppm. The electrostatic charge potential retentivity is increased, the upper limits of the service temp. and humidity of the photosensitive body can be increased, and the photosensitive body is made suitable for negative electrostatic charge.
    • 33. 发明专利
    • PRODUCTION OF PHOTOSENSITIVE BODY
    • JPS6098441A
    • 1985-06-01
    • JP20699183
    • 1983-11-04
    • KONISHIROKU PHOTO IND
    • YAMAZAKI TOSHIKISAKAI EIICHINOMORI HIROYUKI
    • G03G5/08G03G5/082H01L31/0248
    • PURPOSE:To enable stabilization of the electrical characteristic on the surface of a photosensitive body by forming a layer for constituting a photosensitive body of a-Si contg. a prescribed metal for trapping an impurity and/or the ion thereof by vapor deposition or sputtering of said metal or the compd. thereof. CONSTITUTION:The impurity level or trap level of a layer 43a contg. a metal atom and/or metal ion is formed near the layer surface at a fairly high concn. by which the ion, atom and molecule adsorbed on the surface of a photosensitive body 39 are trapped by the metal atom or metal ion and are thus fixed. The accumulation of a carrier or the formation of a space charge layer is weakened overall and the change in the electrical conductivity in the creeping direction of the body 39 is decreased by which the flow of the image, etc. are eventually and effectively prevented. The transition metals belong to the IIIb, IVb, Vb, VIb, VIIb, VIIIb, I b, or IIb group of periodic table are particularly enumerated as the metal having such a remarkable effect and the metal constituting a Friedel-Crafts catalyst is preferred as the metal atom.
    • 34. 发明专利
    • Photosensitive body and its manufacture
    • 感光体及其制造
    • JPS59102244A
    • 1984-06-13
    • JP21315682
    • 1982-12-04
    • Konishiroku Photo Ind Co Ltd
    • YAMAZAKI TOSHIKISAKAI EIICHINOMORI HIROYUKI
    • G03G5/08
    • G03G5/08
    • PURPOSE:To form an electrophotographic sensitive body good in resolution, gradation, and image density and moreover, long in life by surface treating an amorphous silicon type photosensitive layer with a specified substance to absorb it or combine with it. CONSTITUTION:A P type charge blocking layer 42 made of amorphous silicon hydride (a-Si:H) heavily doped with B or the like and an i type photoconductive layer 43 made of a-Si:H lightly doped with B or the like 43 are laminated on a conductive substrate. Then, said laminate is surface-treated in an arm. contg. at least one of activated halogen, halogen ions, and nascent halogen at about 10-350 deg.C to obtain a potosensibody 39.
    • 目的:为了形成分辨率,灰度和图像密度良好的电子照相感光体,此外,通过用特定物质表面处理非晶硅型光敏层以吸收或结合它,寿命长。 构成:用B等重掺杂的非晶硅氢化物(a-Si:H)制成的AP型电荷阻挡层42和用B等轻掺杂的a-Si:H制成的i型光电导层43 层压在导电基板上。 然后,将所述层压体在臂上进行表面处理。 contg。 在约10-350摄氏度下活化的卤素,卤素离子和新生卤素中的至少一种,以获得一个potosensibody 39。
    • 35. 发明专利
    • Photosensitive body and its manufacture
    • 感光体及其制造
    • JPS59102242A
    • 1984-06-13
    • JP21315482
    • 1982-12-04
    • Konishiroku Photo Ind Co Ltd
    • YAMAZAKI TOSHIKISAKAI EIICHINOMORI HIROYUKI
    • G03G5/08
    • G03G5/08
    • PURPOSE:To obtain a photosensitive body superior in long term storage stability by bringing the surface of an amorphous silicon (a-Si) type semiconductor layer formed on a substrate into contact with a cation exchanger. CONSTITUTION:A conductive substrate 41 is set in a bell jar 71, the jar 71 is evacuated to 10 -10 Torr high vacuum through an evacuation pipe 73 having a butterfly valve 72 and then, 0--10kV negative DC voltage is impressed with a DC power supply 76 to the substrate 41 heated to 100-350 deg.C with a heater 75. Then, gaseous CH4, activated H2, and H ions activated with discharge tubes 70, 77 are introduced and at the same time, Si and Al are evaporated from evaporation sources 78, 79 to laminate an a-SiC:H layer 42 contg. Al, an a- Si:H layer 43, and an a-Si:H layer 44 on the substrate 41. The surface of the photosensitive body 39 thus obtained is brought into contact with a cation exchanger, such as zeolite, to exchange the surface ions.
    • 目的:通过使形成在基板上的非晶硅(a-Si)型半导体层的表面与阳离子交换剂接触来获得长期保存稳定性优异的感光体。 构成:将导电性基材41设置在钟罩71中,通过具有蝶阀72的排气管73将罐71抽真空至10 -3 -10乇高真空,然后, 使用加热器75将直流电源76施加到加热到100-350℃的基板41上施加10kV负直流电压。然后引入由放电管70,77激活的气态CH 4,活化的H 2和H离子, 同时,Si和Al从蒸发源78,79蒸发,以层叠a-SiC:H层42。 Al,a-Si:H层43和a-Si:H层44.将如此获得的感光体39的表面与阳离子交换剂如沸石接触,以交换 表面离子。
    • 36. 发明专利
    • Photosensitive body and its manufacture
    • 感光体及其制造
    • JPS59102241A
    • 1984-06-13
    • JP21315382
    • 1982-12-04
    • Konishiroku Photo Ind Co Ltd
    • YAMAZAKI TOSHIKISAKAI EIICHINOMORI HIROYUKI
    • G03G5/08
    • G03G5/08
    • PURPOSE:To obtain a photosensitive body superior in long term storage stability by treating the surface of an amorphous silicon (a-Si) type semiconductor layer formed on a substrate with an electron acceptor. CONSTITUTION:A conductive substrate 41 is set in a bell jar 71, the jar 71 is evacuated to 10 -10 Torr high vacuum through an evacation pipe 73 having a butterfly valve 72 and then, 0--10kV negative DC voltage is impressed with a DC power supply 76 to the substrate 41 heated to 100-350 deg.C with a heater 75. Then, gaseous CH4, activated H2, and H ions activated with discharge tubes 70, 77 are introduced and at the same time, Si and Al are evaporated from evaporation sources 78, 79 to laminate an a-SiC:H layer 42 contg. Al, an a- Si:H layer 43, and an a-Si:H layer 44 on the substrate 41. The surface of the photosensitive body 39 thus obtained is coated with an electron acceptor, such as nitrobenzene to adsorb or combine it.
    • 目的:通过用电子受体处理在基板上形成的非晶硅(a-Si)型半导体层的表面,获得长期保存稳定性优异的感光体。 构成:将导电性基材41设置在钟罩71中,通过具有蝶阀72的抽空管73将罐71抽真空至10 -3 -10乇高真空,然后, 使用加热器75将直流电源76施加到加热到100-350℃的基板41上施加10kV负直流电压。然后引入由放电管70,77激活的气态CH 4,活化的H 2和H离子, 同时,Si和Al从蒸发源78,79蒸发,以层叠a-SiC:H层42。 Al,a-Si:H层43和a-Si:H层44.由此获得的感光体39的表面涂覆有诸如硝基苯的电子受体以吸附或组合。
    • 37. 发明专利
    • Photosensitive body and its manufacture
    • 感光体及其制造
    • JPS59102239A
    • 1984-06-13
    • JP21315182
    • 1982-12-04
    • Konishiroku Photo Ind Co Ltd
    • YAMAZAKI TOSHIKISAKAI EIICHINOMORI HIROYUKI
    • G03G5/08
    • G03G5/08
    • PURPOSE:To obtain a photosensitive body superior in long term storage stability by treating the surface of an amorphous silicon (a-Si) type semiconductor layer formed on a substrate with a Friedel-Crafts catalyst. CONSTITUTION:A conductive substrate 41 is set in a bell jar 71, the jar 71 is evacuated to 10 -10 Torr high vacuum through an evacuation pipe 73 having a butterfly valve 72 and then, 0--10kV negative DC voltage is impressed with a DC power supply 76 to the substrate 41 heated to 100-350 deg.C with a heater 75. Then, gaseous CH4, activated H2, and H ions activated with discharge tubes 70, 77 are introduced and at the same time, Si and A are evaporated from evaporation sources 78, 79 to laminate an a-SiC:H layer 42 contg. Al, an a- Si:H layer 43, and an a-Si:H layer 44 on the substrate 41. The surface of the photosensitive body 39 thus obtained is coated with an aq.sol. of 10 -10mol/l concn. Friedel-Crafts catalyst for the surface to adsorb or combine the metallic atoms constituting said catalyst.
    • 目的:通过用Friedel-Crafts催化剂处理在基板上形成的非晶硅(a-Si)型半导体层的表面,以获得长期保存稳定性优异的感光体。 构成:将导电性基材41设置在钟罩71中,通过具有蝶阀72的排气管73将罐71抽真空至10 -3 -10乇高真空,然后, 使用加热器75将直流电源76施加到加热到100-350℃的基板41上施加10kV负直流电压。然后引入由放电管70,77激活的气态CH 4,活化的H 2和H离子, 同时,Si和A从蒸发源78,79蒸发,以层叠a-SiC:H层42。 Al,a-Si:H层43和a-Si:H层44.由此获得的感光体39的表面涂覆有水溶液。 为10 -5〜10mol / l浓度 Friedel-Crafts催化剂用于表面吸附或组合构成所述催化剂的金属原子。
    • 39. 发明专利
    • DEVICE AND METHOD FOR IMAGE FORMING
    • JPH10232589A
    • 1998-09-02
    • JP3499197
    • 1997-02-19
    • KONISHIROKU PHOTO IND
    • SAKAI EIICHIKITAHARA YOKO
    • G03G21/10
    • PROBLEM TO BE SOLVED: To form an excellent image being free from the image blur over a long period by preventing the occurrence of filming in the image forming device with use of an organic photoreceptor. SOLUTION: In the image forming device provided with electrifying means 12, image exposing means 13, developing means 14, transferring means 18 and cleaning means 23 in the vicinity of the photoreceptor drum 10 equipped with the rotary organic photoreceptor, the toner image is formed by performing the electrification, the image exposure and the development on the organic photoreceptor, and performing cleaning of the photoreceptor surface completing the transfer, and preparation for the following image formation, a roller member 30 performing a rub of the photoreceptor surface by being held in contact with the photoreceptor while rotated is provided between the transferring means 18 and the cleaning means 23. In such a case, the roller member 30, when assuming the average air pore of the roller member as D0 , the average grain size of the toner (volume) as d0 , satisfies the net conditions, 3d0