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31. 发明专利

JPH0772093A DETECTING METHOD AND INSPECTING APPARATUS FOR DEFECT SUCH AS FOREIGN MATTER 失效
公开(公告)号：JPH0772093A
公开(公告)日：1995-03-17
申请号：JP13984894
申请日：1994-06-22
申请人： HITACHI LTD
发明人： SHISHIDO HIROAKI , MATSUMOTO SHUNICHI
IPC分类号： G01N21/88 , G01N21/93 , G01N21/94 , G01N21/956 , H01L21/66
摘要： PURPOSE:To provide an apparatus for stably detecting a defect such as fine foreign matter, etc., in the order of sub microns adhering onto a substrate with circuit patterns, e.g. photomask or the like, particularly, onto a reticle with a phase shift film intended to improve a transfer resolution. CONSTITUTION:An inclined illumination is applied from front sides 2, 20 of a sample with approximately 780nm wavelength, and from rear sides 3, 30 with approximately 488nm wavelength. Generated scattering lights are converged and divided by wavelength in each illuminating direction by an optical system 41 of 4.0 or more NA on the front side of the sample. In a detecting optical system 4, a diffraction light from a circuit pattern is shut by spatial filters 44, 444 set on Fourier transform planes to form an image on detectors 51, 551. Detected values of the detectors are corrected by circuits 113, 123 in accordance with an illumination irregularity. A maximum value of added values when the circuit and detector for obtaining an added value of detected values of 2X2 pixels shift every one pixel in four peripheral directions is obtained by circuits 114, 124, and an OR as a result of the binarization of the maximum value is obtained by a circuit 57. The apparatus is constituted of these circuits, etc.

32. 发明专利

JP2002222752A METHOD AND SYSTEM FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2002222752A
公开(公告)日：2002-08-09
申请号：JP2001017887
申请日：2001-01-26
申请人： HITACHI LTD
发明人： MATSUMOTO SHUNICHI , YOSHITAKE YASUHIRO , MIYAMOTO YOSHIYUKI
IPC分类号： G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a method and system for manufacturing semiconductor device by which the alignment accuracy of a semiconductor device product, particularly, in the device area of the product can be improved at the time of performing mix-and-match exposure. SOLUTION: In the method of manufacturing semiconductor device, the difference between the exposure distortion layers in the device area of the semiconductor device product, and the difference between two exposure distortion layers at the position of an alignment measuring mark, are calculated from the data about the distortions of the exposure fields of two aligners used for mix-and- match and the data about the positions of the device area and the alignment measuring mark. Then a correction value which correlates the differences with each other is calculated and exposure is executed based on a second exposure condition correction value found by correcting a first correction term for exposure condition calculated from the results of alignment measurement with the correction value.

33. 发明专利

JP2000068341A YIELD PREDICTING METHOD AND APPARATUS THEREOF, AND MANUFACTURE OF SUBSTRATE 失效
公开(公告)号：JP2000068341A
公开(公告)日：2000-03-03
申请号：JP23372798
申请日：1998-08-20
申请人： HITACHI LTD
发明人： MATSUMOTO SHUNICHI , NOGUCHI MINORU , MAEDA SHUNJI , OKA KENJI , WATANABE KENJI
IPC分类号： G01N21/88 , G01N21/956 , H01L21/02 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To obtain a yield predicting method and system for realizing improvements in product yield and product productivity, and also to obtain a method for manufacturing substrates. SOLUTION: This method includes a defect detection step of detecting a defect from an image signal, calculating a feature quantity of the detected defect, and calculating the position coordinates of the detected defect in a substrate coordinate system set for a substrate 1, an analysis step of calculating the number of such defects on the basis of the calculated defective feature quantity and the defective position coordinates and on the basis of position coordinates of a product and position coordinates of a pattern region for the product in the substrate coordinate system, and predicting a defective generation probability for each product from defective generation prediction data, on the basis of the calculated number of defectives classified according to the pattern regions of each product.

34. 发明专利

JPH08304296A METHOD AND SYSTEM FOR DETECTING DEFECT OF FOREIGN MATTER 失效
公开(公告)号：JPH08304296A
公开(公告)日：1996-11-22
申请号：JP3167696
申请日：1996-02-20
申请人： HITACHI LTD
发明人： SHISHIDO HIROAKI , MATSUMOTO SHUNICHI
IPC分类号： G01N21/88 , G01N21/94 , G01N21/956
摘要： PURPOSE: To detect a defect of fine foreign matter on the order of submicron, stably with high S/N ratio. CONSTITUTION: When an optical reflection means 8 is constituted of a phase conjugate system having a phase conjugate mirror 81, the light reflected on a reticle 6 is reflected again on the phase conjugate mirror 81 and illuminates a foreign matter on the reticle 6 from the opposite side. Since the foreign matter is illuminated twice with luminous flux, quantity of light being scattered from the dust is substantially doubled. Since the inspection is carried out with high S/N ratio by means of the phase conjugate mirror 81, even a microparticle can be detected surely.

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