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31. 发明专利

JPH01166571A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH01166571A
公开(公告)日：1989-06-30
申请号：JP32399487
申请日：1987-12-23
申请人： HITACHI LTD
发明人： MATSUOKA NAOYUKI , SHIGETA JUNJI , TAKATANI SHINICHIRO
IPC分类号： H01L27/095 , H01L21/338 , H01L27/06 , H01L29/812
摘要： PURPOSE:To improve the controllability of a threshold value by forming a first semiconductor layer between the active layer and the gate electrode of a FET, and providing a second semiconductor layer containing different composition from that of the first layer thereon in a depletion type FET. CONSTITUTION:A first semiconductor layer 103 which has a low carrier concentration and becomes a stopper layer of a selective etching is provided between the active layer 102 and the gate electrode 107 of a FET, and a second semiconductor layer 104 having different composition from that of the first layer 103 is provided between the first layer 103 and the electrode 107 of a depletion type D-FET. The layer 103 prevents the layer 102 having high carrier concentration from directly contacting with the electrode 107, enhances a gate breakdown strength, becomes a stopper layer of etching the layer 104, and the layer 104 of the E-FET can be selectively etched.

32. 发明专利

JPS63266852A ELECTRONIC DEVICE 失效
公开(公告)号：JPS63266852A
公开(公告)日：1988-11-02
申请号：JP9974587
申请日：1987-04-24
申请人： HITACHI LTD
发明人： SHIGETA JUNJI , TAKATANI SHINICHIRO
IPC分类号： H01L39/06 , H01L21/3205 , H01L23/52
摘要： PURPOSE:To easily maintain a superconducting state even at a big current density by a method wherein, out of vector components of an electric current flowing through two adjacent wiring parts, the direction of a mutually parallel component is reversed so that an adverse effect by a magnetic field from an adjacent low-frequency or direct- current wiring part can be reduced. CONSTITUTION:Two superconducting wires 1, 2 mainly composed of barium, yttrium and copper oxide are arranged in parallel and to be adjacent to each other; a flowing direction of an electric current is reversed mutually. Even when a big electric current which is close to a critical electric current value flows through each superconducting wire in this case, a superconducting state is never broken. The big electric current which is close to the critical electric current value flows through the superconducting wire 1; the superconducting state is broken if even a small magnetic field is exerted; because the magnetic field caused by the superconducting wire 2 offsets the magnetic field caused by the superconducting wire 1, the magnetic field is not exerted on the superconducting wire 1 and the superconducting state is never broken. By this setup, it is possible to increase a density of the electric current flowing through the adjacent superconducting wires by a comparatively simple method; it becomes easy to design and manufacture an electronic device.

33. 发明专利

JPS63248016A MANUFACTURE OF SUPERCONDUCTOR 失效
公开(公告)号：JPS63248016A
公开(公告)日：1988-10-14
申请号：JP8091987
申请日：1987-04-03
申请人： HITACHI LTD
发明人： SHIGETA JUNJI , TAKATANI SHINICHIRO
IPC分类号： B32B15/04 , C01G1/00 , C04B35/45 , C23C24/00 , H01B12/06 , H01B13/00
摘要： PURPOSE:To form a large-area superconductive plate or superconductive tape with a nonmetallic superconductive material by coating the nonmetallic superconductive material formed into powder on the plate or tape or film with an organic binder. CONSTITUTION:Copper oxide and Ba and Y are mixed and heat-treated to form (Ba0.6Y0.4)CuO2, it is crushed, its powder is dispersed in a binder made of epoxy resin to form an epoxy superconductor composite material 1. Next, the epoxy superconductor composite material 1 is coated on a copper plate 2 and hardened in the atmosphere of about 60 deg.C. This plate has the superconductivity at about 90 deg.C, its strength is strong, and the machining performance is good. A glass plate and an organic film or tape made of acetate as well as the copper plate can be used as the substrate. Accordingly, a plate, film, tape, etc., can be formed with a nonmetallic superconductive material.

34. 发明专利

JPS63215036A EQUIPMENT AND METHOD FOR GROWTH OF COMPOUND SEMICONDUCTOR 失效
公开(公告)号：JPS63215036A
公开(公告)日：1988-09-07
申请号：JP4753287
申请日：1987-03-04
申请人： HITACHI LTD
发明人： TAKATANI SHINICHIRO , GOSHIMA SHIGEO , KAWADA MASAHIKO , HIRUMA TAKEYUKI
IPC分类号： H01L21/203 , H01L21/26
摘要： PURPOSE:To control effectively the introduction of a material gas into a growth chamber and the cutout, by providing a first vessel and a second vessel with the respective exhausting equipments and discharging the gas in the second vessel while a switching equipment is closed during the growth process of a compound semiconductor. CONSTITUTION:Between a pipeline for a material gas and a growth chamber 1, a gas introducing chamber 9 is installed, and a switching equipment 10 capable of separating the gas introducing chamber 9 and the growth chamber 1 is installed. The growth chamber 1 and the gas introducing chamber 9 are provided with the respective exhausting equipments 12 and 16. When the switching equipment 10 is closed, the material gas is completely cut off, and not introduced into the growth chamber 1. In this case, the material gas flowing into the gas introducing chamber 9 is all discharged by the exhausting equipment 16. Thereby, the introduction of the material gas into the growth chamber 1 and the cutout are effectively controlled.

35. 发明专利

JPS62298178A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS62298178A
公开(公告)日：1987-12-25
申请号：JP14003686
申请日：1986-06-18
申请人： HITACHI LTD
发明人： TAKATANI SHINICHIRO , MORI MUTSUHIRO , UMEMOTO YASUNARI , KAMIYANAGI KIICHI , SHIGETA JUNJI
IPC分类号： H01L29/808 , H01L21/337 , H01L29/80
摘要： PURPOSE:To prevent intrusion of the side etch of a P-type layer beneath a gate electrode, by performing etching of the P-type layer after side wall is provided on the gate electrode. CONSTITUTION:On a semi-insulating GaAs substrate 1, an N-type conductor layer 2, a P-type conductor layer 3 and a gate electrode 4 are formed. Then, a side wall 5 comprising SiO2 is formed on the side surface of the gate electrode 4. With the gate electrode 4 and the side wall 5 as masks, the P-type layer 3 is etched. Then, the side wall 5 is removed. Thereafter, with the gate electrode 4 as a mask, ions are implanted, and an N layer 6 is formed. A cap material 7 for annealing and source and drain electrodes 8 are formed. In this method, since the side etch of the P-type layer 3 does not intrude beneath the gate electrode 4, the electrode structure having an ideal shape can be implemented.

36. 发明专利

JPS62131583A COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS62131583A
公开(公告)日：1987-06-13
申请号：JP27146185
申请日：1985-12-04
申请人： HITACHI LTD
发明人： TAKATANI SHINICHIRO , AIDA TOSHIYUKI , SHIGETA JUNJI
IPC分类号： H01L29/872 , H01L21/338 , H01L29/47 , H01L29/80 , H01L29/812
摘要： PURPOSE:To obtain a high speed element characterized by high heat resistance property, low gate wiring resistance, small dispersion in performance and good reproducibility, by using Re as a Schottky material of a compound semiconductor. CONSTITUTION:On a semi-insulating GaAs substrate 1, an ion implanting active layer 2 is formed. Then, an Re film 3 is deposited on the substrate 1 by an electron-beam vacuum evaporating method. Thereafter a desired gate pattern 4 comprising photoresist is formed. The Re film 3 is finely machined by a dry etching method. The photoresist layer 4 is removed. With the Re gate electrode 3 as a mask, ions are implanted, and an N layer 5 is formed. Thereafter, the active layer 2 and the N layer 5 are activated by annealing. Finally, source and drain electrodes 6 are formed.

37. 发明专利

JP2002368014A Integrated circuit 审中-公开
标题翻译：集成电路
公开(公告)号：JP2002368014A
公开(公告)日：2002-12-20
申请号：JP2001169136
申请日：2001-06-05
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TAKAZAWA HIROYUKI , TAKATANI SHINICHIRO , KIKAWA TAKESHI
IPC分类号： H01L21/338 , H01L29/778 , H01L29/812
摘要： PROBLEM TO BE SOLVED: To provide an integrated circuit where change in output is small, and a high-frequency module that mounts the integrated circuit. SOLUTION: An FET is used as a basic element of an integrated circuit for composing a high-frequency module. In the FET, the amount of arsenic oxides is set to 5.8×10 cm or less in a semiconductor surface oxide layer existing near the gate electrode in a gate recess region. Change in the threshold voltage of the basic element can be suppressed, thus obtaining an integrated circuit and a high-frequency module where variation in characteristics is small.
摘要翻译：要解决的问题：提供输出变化小的集成电路和安装集成电路的高频模块。解决方案：使用FET作为组成高频模块的集成电路的基本元件。在FET中，在栅极凹部区域的栅电极附近存在的半导体表面氧化层中的砷氧化物的量设定为5.8×10 20 cm -3以下。可以抑制基本元件的阈值电压的变化，从而获得集成电路和特性变化小的高频模块。

38. 发明专利

JPH09298168A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH09298168A
公开(公告)日：1997-11-18
申请号：JP11229396
申请日：1996-05-07
申请人： HITACHI LTD
发明人： TAKAZAWA HIROYUKI , TAKATANI SHINICHIRO
IPC分类号： H01L21/28 , H01L21/302 , H01L21/306 , H01L21/338 , H01L29/41 , H01L29/47 , H01L29/778 , H01L29/812 , H01L29/872
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which has an FET(field effect transistor) having excellent gate characteristics and its manufacturing method. SOLUTION: The manufacturing process of a semiconductor device includes an etching process in which the semiconductor film of a sample having a semiconductor film is etched from its surface, a process in which the etched sample is dipped in basic solution containing N-H couplings and then washed with pure water and a process in which the washed sample is covered with a metal which is to be a gate electrode. With this constitution, gate characteristics 401 is improved in comparison with the characteristics 402 of the conventional constitution and an HEMT(high electron mobility transistor) which is the fundamental device of a system utilizing a milliwave frequency band (30GHz-300GHz) can be manufactured with a high yield.

39. 发明专利

JPH09223777A PLATINUM THIN FILM, SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH09223777A
公开(公告)日：1997-08-26
申请号：JP2892896
申请日：1996-02-16
申请人： HITACHI LTD
发明人： KUSHIDA KEIKO , HIRATANI MASAHIKO , TORII KAZUNARI , TAKATANI SHINICHIRO , MIKI HIROSHI , MATSUI YUICHI , FUJISAKI YOSHIHISA
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor device having a fine storage device suitable for high level of integration, by adding elements forming oxide to a lower conductive film of a ferroelectic capacitor forming the ferroelectric film on the lower conductive film containing platinum as the main component, and segregating the elements into the grain boundary of the platinum thin film. SOLUTION: This device is provided with a substrate, a lower conductive film 62 which is formed on the substrate and contains platinum as the main component, and an upper conductive layer formed on the lower conductive film 62. The upper conductive film, the lower conductive film 62 and a ferroelectric film 63 constitute a capacitor. Elements for forming oxide are added to the lower conductive film 62, and segregated into the grain boundary of a platinum thin film. At the time of forming the ferroelectric thin film, or of heat treatment in an oxygen atmosphere necessary for crystallization, oxygen diffusion in the platinum film is mainly generated in the crystal grain boundary. The oxygen diffusion is captured by oxidizing iron or the like segregated into the crystal grain boundary of platinum, and oxygen diffusion of the platinum film itself is restrained, so that a conductive layer for preventing diffusion is not oxidized.

40. 发明专利

JPH07263383A METHOD AND MANUFACTURE FOR ETCHING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH07263383A
公开(公告)日：1995-10-13
申请号：JP5549294
申请日：1994-03-25
申请人： HITACHI LTD
发明人： YAMAMOTO SEIJI , TAKATANI SHINICHIRO , MOCHIJI KOZO , TAKAZAWA HIROYUKI
IPC分类号： H01L29/73 , H01L21/302 , H01L21/331 , H01L21/338 , H01L29/205 , H01L29/737 , H01L29/778 , H01L29/812
摘要： PURPOSE:To materialize an etching method, which performs the etching high in anisotropy without doing damage to an element while keeping the etching ratio between semiconductor elements different in composition high, and the manufacture of a semiconductor device using this. CONSTITUTION:A semiconductor sample 101 to be etched is placed on a vacuum vessel 103 which introduces plural kinds of etchant gas (Cl2111, O2112) from molecular beam valves 106 and 107, and photoexcited selective etching is performed by applying a laser beam 108 from an excimer laser 107 to the surface, and adjusting the intensity of the laser beam 108.

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