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31. 发明专利

JPH06152053A DISTRIBUTED-FEEDBACK SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPH06152053A
公开(公告)日：1994-05-31
申请号：JP29955192
申请日：1992-11-10
申请人： HITACHI LTD
发明人： SAGAWA MISUZU , HIRAMOTO KIYOHISA , TSUCHIYA TOMONOBU , TSUJI SHINJI
IPC分类号： H01S5/00 , H01S3/18
摘要： PURPOSE:To improve low threshold characteristics and efficiency through operation by stable longitudinal single mode by making an effective diffraction grating period which light senses half an actual period of diffraction grating. CONSTITUTION:A high refractive index layer 3 is provided on a clad layer 2 and a diffraction grating is formed by etching punching through the high refractive index layer 3. An optical guide layer 4 is provided on the diffraction grating. In the process, a period of formed diffraction grating is secondary to an oscillation wavelength. Here, refraction factors of the clad layer 2, the high refractive index layer 3 and the optical guide layer 4 are n1, n2, n3, respectively and a relation of n2>n3>n1 is satisfied. According to this constitution, effective refractive index P2 which light actually senses can be made half a physical diffraction grating period P1. That is, primary diffraction can be acquired by a period of secondary diffraction grating. Here, an oscillation wavelength of 1.2mum or below brings about remarkable effect.

32. 发明专利

JPH0529602A SEMICONDUCTOR OPTICAL INTEGRATED ELEMENT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0529602A
公开(公告)日：1993-02-05
申请号：JP18074691
申请日：1991-07-22
申请人： HITACHI LTD
发明人： AOKI MASAHIRO , SUZUKI MAKOTO , TAKAHASHI MAKOTO , TSUCHIYA TOMONOBU , UOMI KAZUHISA , TAKAI ATSUSHI
IPC分类号： H01S5/00 , B82Y10/00 , B82Y20/00 , G02F1/025 , H01L27/15 , H01S5/026 , H01S5/227 , H01S5/34 , H01S5/343 , H01S5/50 , H04B10/2513 , H04B10/29
摘要： PURPOSE:To provide a structure and a method for manufacture to easily obtain highly efficient optical coupling between optical elements different from each other in functions and performance on a semiconductor optical integrated element. CONSTITUTION:A semiconductor optical integrated element obtained by forming a plurality of continuous bulk semiconductor layers 6 or quantum well structures 9 different in grown layer thickness or composition element region by element region and by integrating semiconductor optical elements different in performance on the same semiconductor substrate 1 using the difference in the layers' or wells' energy level. Manufacturing method for the semiconductor optical integrated element by the region selective growth technique using an insulating film patterning mask 5 formed on the semiconductor substrate. The quantum well structure is applied to plurality of elements to be integrated, which almost always gives optical coupling between the element. This forms two or more optical elements functionally different by one time of crystal growth, which heretofore integrated by a plurality of times of epitaxial growth.

33. 发明专利

JP2000216500A SEMICONDUCTOR OPTICAL ELEMENT, ARRAY THEREOF AND OPTICAL COMMUNICATION SYSTEM USING THEM 失效
公开(公告)号：JP2000216500A
公开(公告)日：2000-08-04
申请号：JP1265599
申请日：1999-01-21
申请人： HITACHI LTD
发明人： TSUCHIYA TOMONOBU , OYA AKIRA , KOMORI MASAAKI
IPC分类号： H01L29/06 , H01L21/205 , H01S5/00 , H01S5/343 , H01S5/40
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor optical element and a semiconductor optical element array which realize a high speed while the yield of the element is increased in the same manner as the case of a buried structure on an n-InP substrate even in a buried structure on a p-InP substrate, by a method wherein only a semiinsulating high-resistance layer is buried while the mutual diffusion of Fe-Zn is being suppressed, and to obtain an optical communication system which uses them. SOLUTION: As buried layers, a semiinsulating InAlAs layer 9 and a semiinsulating Fe-based InP layer 10 are used. Consequently, the semiinsulating InAlAs layer 9 is inserted between a Zn-doped InP layer 1 as a substrate and the Fe-doped InP layer 10, and the mutual diffusion of Fe-Zn is suppressed. In addition, a p/n junction is not used, and all the semiinsulating layers are buried. By this constitution, since all the semiinsulating layers are used, a delicate shape control operation is not required, and the yield of an element can be increased. In addition, since a p-InP layer and an n-InP layer are not used, a parasitic capacitance is small, and the speed of the element can be increased.

34. 发明专利

JPH11243252A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH11243252A
公开(公告)日：1999-09-07
申请号：JP4333398
申请日：1998-02-25
申请人： HITACHI LTD
发明人： OYA AKIRA , KOMORI MASAAKI , TSUCHIYA TOMONOBU , AOKI MASAHIRO , SATO HIROSHI
IPC分类号： H01L33/06 , H01L33/28 , H01L33/30 , H01S5/00 , H01S3/18 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which is capable of having high reliability by preventing deterioration of an element due to the diffusion of Zn as a dopant element from a high-concentration p-type contact layer into the vicinity of an active layer. SOLUTION: A p-type ZnTe contact layer 18 is disposed between a p-electrode 21 and a p-type InP clad layer 16. In this case, it is sufficient that the contact layer be made of a p-type II-VI compound semiconductor. Carriers can be doped into this layer at a high carrier concentration not smaller than 1×10 cm but not larger than 1×10 cm . Furthermore a p-type ZnSe/ZnTe intermediate layer 17 may be also disposed between the clad layer 16 and the contact layer 18.

35. 发明专利

JPH11220217A SEMICONDUCTOR OPTICAL ELEMENT AND ITS MANUFACTURE 失效
公开(公告)号：JPH11220217A
公开(公告)日：1999-08-10
申请号：JP2292198
申请日：1998-02-04
申请人： HITACHI LTD
发明人： TSUCHIYA TOMONOBU , KOMORI MASAAKI , SATO HIROSHI , AOKI MASAHIRO , OYA AKIRA
IPC分类号： H01L21/205 , H01S5/00 , H01S5/026 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To improve reliability of an integrated element by providing a masks of an oxide film and a nitride film on the surface of a substrate in the vicinity of many periodicities, adding raw-material gas including chlorine by organic- metal gaseous-phase growing method, and forming the quantum well structure having the different periodicities on the same substrate by one selective growth. SOLUTION: On an n-InP substrate 1 or an n-InP buffer layer 2, a selective- growing SiO2 mask 3 is deposited. An active layer 4, which is constituted of an n-InGaAsP guide layer 7, a barrier layer 8, a well layer 9, a CH3 Cl added well layer 10 and undoped guide layer 11, is selectively grown by an organic- metal gaseous-phase growing method. Then, the selective-growing SiO2 mask 3 is removed, p-InP clad layers 12 and 13 and a p-InGaAs cap layer 14 are sequentially grown. A p-type cap layer 15 and an n-type cap layer 16 are evaporated. Cleavage is performed at a laser part and a beam expanding part, and the element is formed. Thus, the periodicities of the beam expanding part and the laser part can be independently controlled, and the emitting angle can be decreased.

36. 发明专利

JPH09260787A INP-BASED SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPH09260787A
公开(公告)日：1997-10-03
申请号：JP6971396
申请日：1996-03-26
申请人： HITACHI LTD
发明人： TSUCHIYA TOMONOBU , TANIWATARI TAKESHI , HIRAMOTO KIYOHISA
IPC分类号： H01L29/20 , H01L21/205 , H01L33/06 , H01L33/08 , H01L33/16 , H01L33/30 , H01S5/00 , H01S3/18 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To decrease tear-drop defects in a growth layer, by reducing the etch pit density of an InP substrate below a specified value and sloping the surface azimuth of the substrate in a specified angle range. SOLUTION: Etch pit density of InP substrate is 1000cm , and the plane azimuth of the surface of substrate is sloped in an angle range of 0.2 to 3 degrees from . The drawing shows a relation between tear-drop defect density and an angle of inclination of the InP growth layer, at growth temperature of 590 deg.C and film thickness of 5μm. Also, the relation between the angle of inclination and emission half-value width, when using InGaAs mixed crystal in the growth layer, is also added. Density of the tear-drop defect of the growth layer decreases as the angle of inclination increases and becomes constant when the angle exceeds 0.2 degrees. On the other hand, in the case of mixed crystal of InGaAs, the composition of InGaAs layer changes as the angle of inclination increases. Because of this, the half-value emission increases in width when the angle of inclination is too large. Therefore, the angle of inclination should be restricted below 3 degrees, in the case of InGaAs or InGaAsP mixed crystal.

37. 发明专利

JPH09232666A SEMICONDUCTOR LASER AND PARALLEL TRANSMISSION LIGHT TRANSMITTING MODULE 失效
公开(公告)号：JPH09232666A
公开(公告)日：1997-09-05
申请号：JP3168596
申请日：1996-02-20
申请人： HITACHI LTD
发明人： UOMI KAZUHISA , NAKAHARA KOJI , TSUCHIYA TOMONOBU
IPC分类号： H01S5/00 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To enable a low thereshold value current to be applied without lessening the current blocking effect in BH structure by a method wherein n-type impurities generating high density multiple electrons are led into a part or the whole multiquantum well active layer as well as making the first conductivity type buried layer suppress the diffusion of the multiple electrons. SOLUTION: After the formation of a p-InP clad layer 2 on a P-InP substrate 1, an n-type modulation doped InGaAsP-MQW active layer 3 made of an undoped strain quantum well layer 3a, an n-type doped barrier layer 3b and an n-type InP clad layer 4 are formed. Next, an SiO2 film is formed to form a mesa stripe by etching step and then a P-InP buried layer 5, an n-InP buried layer 6, and a P-InP buried layer 7 are formed on the side of the mesa stripe leaving the coated SiO2 film intact. Next, after removing the SiO2 film, n-InP flattened layer 8, an n-InGaAs(P) cap layer 10, an (n) electrode 11 and a (p) electrode 12 are formed.

38. 发明专利

JPH07235724A SEMICONDUCTOR LASER 失效
公开(公告)号：JPH07235724A
公开(公告)日：1995-09-05
申请号：JP2506994
申请日：1994-02-23
申请人： HITACHI LTD
发明人： UOMI KAZUHISA , OISHI AKIO , OKA SATOHIKO , KOMORI MASAAKI , TSUCHIYA TOMONOBU
IPC分类号： H01S5/00 , H01S3/18
摘要： PURPOSE:To provide a long-wavelength band semiconductor layer that oscillates by low-threshold current (especially of 1mA or below with high slope efficiency. CONSTITUTION:A long wavelength band semiconductor laser (wavelength of 1.25mum-1.6mum) is provided by setting the resonator length L and the reflectance Rf of a rear edge plane at suitable values (80mum

39. 发明专利

JPH07111363A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH07111363A
公开(公告)日：1995-04-25
申请号：JP25549193
申请日：1993-10-13
申请人： HITACHI LTD
发明人： SAGAWA MISUZU , HIRAMOTO KIYOHISA , TSUCHIYA TOMONOBU , TOYONAKA TAKASHI
IPC分类号： H01S5/00 , H01S5/042 , H01S3/18
摘要： PURPOSE:To obtain a semiconductor laser of wavelength band 0.98mum high in output power and reliability. CONSTITUTION:A semiconductor laser device is provided with an N-InGaP clad layer 3, a strained quantum well SCH active layer 4 composed of an InGaAsP optical guide layer 15, an InGaAs strained quantum well layer 13, and a GaAs barrier layer 14, a P-InGaP clad layer 5, a P-InGaAsP optical waveguide layer 6, and a P-InGaP clad layer 7, wherein a ridge is so provided as not to reach to the active layer 4 and buried in an N-InGaP current constriction layer 9. By this setup, the device can be set 1/4 or less as low in resistance as a conventional one and lessened in heat release value at its starting. In result, a strained quantum well semiconductor laser high in output power and operating in a stable mode can be obtained.

40. 发明专利

JPH0722692A SEMICONDUCTOR LASER 失效
公开(公告)号：JPH0722692A
公开(公告)日：1995-01-24
申请号：JP16091993
申请日：1993-06-30
申请人： HITACHI LTD
发明人： UOMI KAZUHISA , SASAKI SHINJI , KUSUNOKI HIRONORI , KONO TOSHIHIRO , TSUCHIYA TOMONOBU , OKUNO YAE
IPC分类号： H01S5/00 , H01S3/18
摘要： PURPOSE:To obtain a laser of the buried heterostructure having a large current block effect by having Si as a conductive type impurity of a second buried layer of a second conductive type. CONSTITUTION:A p-InP clad layer 2, an undoped InGaAsP/InGaAsP-MQW active layer 3 and an active InP clad layer 4 are made to grow on a p-InP substrate 1 by an organic metal vapor growth method. Later, etching is performed after being coated with an SiO2 film 11 for forming a mesa stripe. Then, etching is performed so as to make the SiO2 film 11 in an overhang state. A side of the mesa stripe is buried in a p-InP buried layer 5, an n-InP buried layer 6, an n-InP buried layer 7 and an n-InP layer 8 as they remain coated with SiO2 film by an organic metal vapor growth method. In this way, the structure having a surrounding p-InP layer is obtained causing no abnormal growth to the n-InP buried layer 6 so as to allow the ideal block layer structure having no n-n junction which is a factor of a leakage current to be formed as well as to allow a laser of the buried heterostructure having a large current check effect to be formed.

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