专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明专利

JP2000021876A METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000021876A
公开(公告)日：2000-01-21
申请号：JP18510998
申请日：1998-06-30
申请人： FUJITSU LTD
发明人： IRINO KIYOSHI , HIZUYA KENICHI , KAWAMURA TATSUYA , SUGIZAKI TARO , OKUBO SATOSHI , NAKANISHI TOSHIRO , TAKASAKI KANETAKE
IPC分类号： H01L21/31 , H01L21/314 , H01L21/316 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To provide a method or device for manufacturing a semiconductor device with high mass-productivity in manufacturing a thin oxide and nitride film. SOLUTION: This method comprises a process (a) for carrying a silicon wafer to a reaction chamber, equipped with first and second gas inlet ports, a process (b) for introducing oxidizing atmosphere from the first gas inlet port, and increasing the temperature of the silicon waver to an oxidizing temperature, a process (c) for introducing wet oxidizing atmosphere from the first gas inlet port, and forming a thermal oxide film on the silicon wafer surface, a process (d) for purging the inside part of the reaction chamber with an inert gas, and turning residual moisture to about 1,000 ppm or less, and a process (e) for maintaining an annealing temperature which is 700 deg.C or higher and an oxidizing temperature or higher introducing atmosphere including NO or N2O from the second gas inlet port to the chamber, introducing nitrogen to the thermal oxide film, and converting this into an oxide and nitride film.

32. 发明专利

JPH10223628A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH10223628A
公开(公告)日：1998-08-21
申请号：JP2158297
申请日：1997-02-04
申请人： FUJITSU LTD
发明人： NAKANISHI TOSHIRO , ISHIKAWA KENJI
IPC分类号： H01L21/8234 , H01L21/316 , H01L21/324 , H01L21/8238 , H01L27/088 , H01L27/092
摘要： PROBLEM TO BE SOLVED: To introduce more heavy hydrogen bonds into an oxide film by forming the oxide film by oxidizing a semiconductor layer in an atmosphere containing the vapor of heavy hydrogen. SOLUTION: A p-type silicon wafer 10 is placed on a wafer carrier 3 and the inside of an oxidizing furnace 1 is adjusted to the atmospheric pressure and, at the same time, the atmosphere in the internal upper section of the furnace 1 is set at a prescribed temperature by means of a heater 2 and maintained at the temperature. Then a heavy hydrogen solution 12 is bubbled by introducing an oxygen gas into the solution 12 as a carrier gas. While the solution 12 is bubbled, an oxide film 11 is formed by oxidizing the semiconductor layer 10 in an atmosphere containing heavy hydrogen vapor by introducing the heavy hydrogen vapor produced when the solution 12 is bubbled into the internal upper section of the furnace 1 through a vapor introducing pipe 8. Therefore, heavy hydrogen bonds can be prevented from being cut off by hot carriers.

33. 发明专利

JPH02162766A CCD IMAGE SENSING DEVICE 失效
公开(公告)号：JPH02162766A
公开(公告)日：1990-06-22
申请号：JP31805688
申请日：1988-12-15
申请人： FUJITSU LTD
发明人： NAKANISHI TOSHIRO
IPC分类号： H01L27/148 , H04N5/335 , H04N5/361 , H04N5/369 , H04N5/372
摘要： PURPOSE:To reduce a reverse leakage current of a PN junction, which causes a dark current failure, in density by a method wherein a photodiode, which has such a structure that the ratio of the peripheral length of the photodiode of a photoelectric conversion section to the photodetective area of the photodiode is made small, is provided to the photoelectric conversion section. CONSTITUTION:A photodiode 3a, which has such a photodetective area that the ratio of the peripheral length of the photodiode 3a of a photoelectric conversion section to the photodetective area of the photodiode 3a is made smaller than a value which is four times an inverse number of the square root of the photodetective area, is provided. The charges occurring in the photodiode 3a are transferred to a charge transfer CCD 3b by turning a right transfer gate 3c ON, vertically transferred by the charge transfer CCDs 3b shaded by slashes between the photodiodes 3a, and taken out as a signal. If the photodiode 3a is a right hexagon and the area of the hexagon is a , the ratio of the peripheral length to the area is 3.72/a and the ratio peripheral length/area of the photodiode 3a is smaller than 4/a.

34. 发明专利

JPH01304037A VACUUM APPARATUS 失效
公开(公告)号：JPH01304037A
公开(公告)日：1989-12-07
申请号：JP13451988
申请日：1988-06-02
申请人： FUJITSU LTD
发明人： NAKANISHI TOSHIRO
IPC分类号： B01J3/00
摘要： PURPOSE:To achieve a high vacuum state rapidly as compared with a conventional method by promoting the separation of the gas adhered to the surface of the wall of a vacuum container, by irradiating the inner surface of the vacuum container with synchrotron emission beam while continuing evacuation by a vacuum pump. CONSTITUTION:A vacuum pump 2 is connected to a vacuum container 1 and synchrotron emission beam guided to the vacuum container 1 is generated by an apparatus 3. Further, a rotationally controllable synchrotron emission beam reflecting plate 4 is arranged in the vacuum container 1. That is, the inner surface of the vacuum container is irradiated with the synchrotron emission beam (electromagnetic wave having a continuous spectrum in a wide wavelength region from X-rays to a radiowave region and high intensity) in order to separate adhered gas without using temp. to apply activating energy of separation and the separation of the adhered gas is promoted. By continuing evacuation by the vacuum pump, a high vacuum state, desirably, an ultra-high vacuum state of 10 Torr or less can be achieved rapidly as compared with a conventional method.

35. 发明专利

JP2006261591A Method of manufacturing insulated gate type semiconductor apparatus 审中-公开
标题翻译：制造绝缘栅型半导体器件的方法
公开(公告)号：JP2006261591A
公开(公告)日：2006-09-28
申请号：JP2005080300
申请日：2005-03-18
申请人： Fujitsu Ltd , 富士通株式会社
发明人： NAKANISHI TOSHIRO
IPC分类号： H01L21/8247 , H01L21/02 , H01L21/265 , H01L21/28 , H01L21/285 , H01L27/115 , H01L27/12 , H01L29/423 , H01L29/49 , H01L29/78 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To constitute gate electrodes of a single crystal semiconductor of high crystallinity by a simple manufacturing process concerning a method of manufacturing an insulated gate type semiconductor apparatus.
SOLUTION: After ion-injecting an element 5 for exfoliation to the single crystal semiconductor substrate 4 for pasting, the single crystal semiconductor substrate 4 for pasting is pasted to a single crystal semiconductor substrate 1 for forming an element having an insulating film 3 formed thereon, so that the ion-injecting side of the single crystal semiconductor substrate 4 for pasting may be a pasting surface. Next, thermal treatment is carried out and the single crystal semiconductor substrate 4 for pasting is exfoliated in the vicinity of the concentration peak position of the injected element. Thereafter, the remaining part 6 of the single crystal semiconductor substrate 4 for pasting remaining on the side of the single crystal semiconductor substrate 1 for forming an element is etched in the state of the gate electrodes.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：通过关于制造绝缘栅型半导体器件的方法的简单制造方法构成高结晶度的单晶半导体的栅电极。解决方案：将用于剥离的元件5离子注入用于粘贴的单晶半导体基板4之后，将用于粘贴的单晶半导体基板4粘贴到用于形成具有绝缘膜3的元件的单晶半导体基板1 形成在其上，使得用于粘贴的单晶半导体基板4的离子注入侧可以是糊化表面。接下来，进行热处理，并且用于粘贴的单晶半导体基板4在注入元件的浓度峰值位置附近被剥离。此后，在栅电极的状态下蚀刻用于残留在用于形成元件的单晶半导体衬底1侧的用于粘贴的单晶半导体衬底4的剩余部分6。版权所有（C）2006，JPO＆NCIPI

36. 发明专利

JP2000269490A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000269490A
公开(公告)日：2000-09-29
申请号：JP6970399
申请日：1999-03-16
申请人： FUJITSU LTD
发明人： NAKANISHI TOSHIRO , TAMURA YASUYUKI , OKUBO SATOSHI , IRINO KIYOSHI , SUGIZAKI TARO
IPC分类号： H01L29/78 , H01L21/26 , H01L21/316 , H01L21/318 , H01L21/469
摘要： PROBLEM TO BE SOLVED: To prolong the service life of an element to hot carrier, even if the length of the gate becomes long, in the manufacture of the semiconductor device including the formation process of a transistor. SOLUTION: This manufacturing method includes a process of forming a gate oxide film 2 on a semiconductor substrate 1, a process of forming a gate electrode 3G on the gate oxide film 2, a process of forming a first impurity- diffused layers 5s and 5d on the semiconductor substrate 1 at both sides of the gate electrode 3G, using the gate electrode 3G as a mask, a process of forming an insulating film 6 covering the gate electrode 3G and the semiconductor substrate 1, a process of etching the insulating film 6 and leaving it as the sidewall 6s at the side of the gate electrode 3G, and a process of forming acid nitride films 7 and 8 by exposing the insulating film or the sidewalls 6s into a nitric oxide atmosphere, before etching the insulating film 6 or after forming the sidewalls 6s, thereby nitriding both sides of the gate oxide film 2.

37. 发明专利

JPH0766193A DEPOSITION OF OXIDE IN SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0766193A
公开(公告)日：1995-03-10
申请号：JP20965693
申请日：1993-08-24
申请人： FUJITSU LTD
发明人： NAKANISHI TOSHIRO , SATO YASUHISA
IPC分类号： H01L21/316 , H01L29/78
摘要： PURPOSE:To deposit a thin oxide uniformly with no surface roughness by depositing a first oxide on the surface of a semiconductor layer and then depositing a second oxide through thermal oxidation in an oxidation furnace under reduced pressure thereby retarding evaporation of atoms of semiconductor from the surface thereof. CONSTITUTION:At first, the pressure in an oxidation furnace 1 is reduced to 1X10 Torr and the atmosphere at the upper part in the furnace is heated to 1000 deg.C by means of a heater 2. A silicon wafer 10 is then mounted on a wafer carrier 3 which is then elevated to a uniform temperature band surrounded by the heater 2. In the way of elevation, oxygen gas is fed through a gas introduction pipe 8 of the oxidation furnace 1 and the inner pressure is increased up to 1Torr. Consequently, a preliminary oxide 11 is deposited by 1-2nm on the surface of the silicon wafer 10. At a moment when the silicon wafer 10 arrives at the upper uniform temperature band, oxygen gas supply is increased to promote oxidation on the surface of the silicon wafer 10 thus depositing an oxide 12.

38. 发明专利

JPH0669438A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0669438A
公开(公告)日：1994-03-11
申请号：JP22146292
申请日：1992-08-20
申请人： FUJITSU LTD
发明人： NAKANISHI TOSHIRO
IPC分类号： H01L21/8238 , H01L21/336 , H01L27/092 , H01L29/78
摘要： PURPOSE:To provide a manufacture of a semiconductor device in which the diffusion of a boron introduced into a semiconductor film as a gate electrode to a lower channel region layer can be controlled and the short channel effect can be effectively controlled concerning the manufacture of the semiconductor device having a p silicon gate field effect transistor. CONSTITUTION:A manufacture of a semiconductor device comprises the steps of forming a silicon oxide film 15 on a silicon substrate 13 and then introducing a nitrogen into the silicon oxide film 15 by an ion implantation and subsequently performing a heating treatment, removing the surface layer of the silicon oxide film 15 and exposing a region having a high concentration of nitrogen, forming a silicon film on a silicon oxide film 15a and then introducing a boron into the silicon film, and patterning the silicon film and forming a gate electrode.

39. 发明专利

JPH05308076A 失效
公开(公告)号：JPH05308076A
公开(公告)日：1993-11-19
申请号：JP29985092
申请日：1992-11-10
申请人： FUJITSU LTD
发明人： HARA AKITO , NAKANISHI TOSHIRO , AOKI MASAKI
IPC分类号： H01L21/322
摘要： PURPOSE:To provide an oxygen deposition method of a silicon wafer which deposits oxygen within the silicon wafer which is manufactured by the Czochralski process and can form a sufficient amount of oxygen deposits in a practical and short treatment time even for a silicon wafer with a low oxygen concentration. CONSTITUTION:After a silicon wafer is heated within a temperature range of approximately 1,000-1,200 deg.C and then an outer diffusion heat treatment for diffusing oxygen at the surface layer outward is performed, a low-temperature heat treatment within a temperature range of approximately 300-600 deg.C is performed within a crystal containing hydrogen or an atmosphere containing hydrogen. After the low-temperature heat treatment, heat treatment is performed at approximately 600-900 deg.C for forming the deposited nucleus of oxygen and then a high temperature heat treatment of approximately 900-1,100 deg.C for growing an oxygen deposit is performed.

40. 发明专利

JPH05217931A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH05217931A
公开(公告)日：1993-08-27
申请号：JP1797792
申请日：1992-02-04
申请人： FUJITSU LTD
发明人： NAKANISHI TOSHIRO
IPC分类号： H01L21/265 , H01L21/316
摘要： PURPOSE:To reduce a tunnel leakage current flowing in an insulating film when a high electric field is applied concerning a method of treating the insulating film. CONSTITUTION:First, fluorine ions with the number of 1X10 cm or more are implanted in a silicon oxide film 12 formed on a semiconductor substrate 11 and a heat treatment is performed at the temperature of 900 deg.C or below. Second, oxygen ions with the number of 1X10 cm or more are implanted in the silicon oxide film 12 formed on the semiconductor substrate 11 and the heat treatment is performed at the temperature of 800 deg.C or below. Third, the fluorine ions with the number of 1X10 cm or more are implanted to the surface of the semiconductor substrate 11 and a silicon oxide film 14 by a heat oxidation is formed on the surface of the substrate 11 and the heat treatment for the substrate 11 is performed at the temperature of 900 deg.C or below. Finally the oxygen ions with the number of 1X10 cm or more are implanted to the surface of the semiconductor substrate 11 and the silicon oxide film 14 by the heat oxidation is formed on the surface of the substrate 11 and the heat treatment for the substrate 11 is performed at the temperature of 800 deg.C or below.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式