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31. 发明专利

JP2007053169A Deposition method of semiconductor film 有权
标题翻译：半导体膜的沉积方法
公开(公告)号：JP2007053169A
公开(公告)日：2007-03-01
申请号：JP2005235990
申请日：2005-08-16
申请人： Fujitsu Ltd , Toshiba Corp , 富士通株式会社 , 株式会社東芝
发明人： MORIYAMA YOSHIHIKO , IKEDA KEIJI
IPC分类号： H01L21/306 , H01L21/20 , H01L21/205
CPC分类号： C23C16/0227 , C30B25/02 , C30B25/18 , C30B29/08 , H01L21/02052 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02658 , H01L21/02661
摘要： PROBLEM TO BE SOLVED: To provide the deposition method of a semiconductor film by which a high-quality and flat semiconductor film is formed on a Ge-based/SiGe-based substrate.
SOLUTION: A Ge-based substrate or an SiGe-based substrate of the semiconductor film is cleaned by a hydrochloric acid solution or a hydrochloric acid added with hydrofluoric acid, the cleaned substrate is annealed by hydrogen in a CVD deposition apparatus, and finally a deposition gas is introduced into the CVD layer apparatus.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供在基于Ge的/基于SiGe的基板上形成高品质且平坦的半导体膜的半导体膜的沉积方法。解决方案：通过加入氢氟酸的盐酸溶液或盐酸清洗半导体膜的基于Ge的衬底或SiGe基衬底，在CVD沉积设备中用氢清洗被清洁的衬底，以及最后将沉积气体引入到CVD层装置中。版权所有（C）2007，JPO＆INPIT

32. 发明专利

JP2005086171A Semiconductor device and method of fabricating same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2005086171A
公开(公告)日：2005-03-31
申请号：JP2003320071
申请日：2003-09-11
申请人： Fujitsu Ltd , 富士通株式会社
发明人： YAMASHITA YOSHIMI , ENDO SATOSHI , IKEDA KEIJI
IPC分类号： H01L21/335 , H01L21/336 , H01L21/338 , H01L29/20 , H01L29/423 , H01L29/47 , H01L29/778 , H01L29/812 , H01L29/872
CPC分类号： H01L29/66462 , H01L29/2003 , H01L29/42316 , H01L29/475 , H01L29/7787
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having an easy-to-fabricate HEMT capable of performing an enhancement-mode operation, and also to provide a method of fabricating the device. SOLUTION: In a nitride-based semiconductor, the height of a Schottky barrier Φ B markedly changes with respect to the work function of a metal Φ M , unlike GaAs and Si. Thus, in the HEMT having a buffer layer 2 and a barrier layer 3 made of the nitride-based semiconductor successively formed on a substrate 1 with a gate electrode 4 formed on the buffer layer 3, for example, the enhancement-mode operation is enabled by selecting a metal of a comparatively high work function Φ M as a metal that makes up the gate electrode 4 and adjusting the thickness of the barrier layer 3 so as to render the height of a Schottky barrier Φ B high as compared with the surface potential Φ S of the semiconductor on both sides of the gate electrode 4, because secondary electron gas is blocked from existing under the gate electrode 4 without forming a recess in the region of the barrier layer 3 immediately under the gate electrode 4. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种具有能够进行增强模式操作的易于制造的HEMT的半导体器件，并且还提供一种制造该器件的方法。解决方案：在氮化物基半导体中，肖特基势垒Φ B 的高度相对于金属ΦSB> M 的功函数显着变化，与GaAs不同和Si。因此，在具有缓冲层2和由氮化物系半导体构成的阻挡层3的HEMT中，例如在基板1上形成有形成在缓冲层3上的栅极电极4，例如能够实现增强型工作通过选择作为构成栅极电极4的金属的相对高功函数Φ M 的金属，调整阻挡层3的厚度，使肖特基势垒Φ< 与栅电极4的两侧的半导体的表面电位Φ S 相比，SB> B 高，这是因为二次电子气体被阻挡在栅电极4下面而没有形成在栅极4正下方的阻挡层3的区域中的凹部。版权所有（C）2005，JPO和NCIPI

33. 发明专利

JP2004327777A Manufacturing method of field effect transistor having schottky source-drain structure 有权
公开(公告)号：JP2004327777A
公开(公告)日：2004-11-18
申请号：JP2003121368
申请日：2003-04-25
申请人： Fujitsu Ltd , 富士通株式会社
发明人： IKEDA KEIJI
IPC分类号： H01L21/28 , H01L21/336 , H01L29/417 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a MOSFET with a Schottky source-drain structure, having a practically low Schottky barrier by attaining a process executed at a far lower temperature.
SOLUTION: A polycrystal silicon/germanium layer 2A which is to become a channel layer is formed on an insulating substrate 1, a metallic layer is formed on the polycrystalline silicon/germanium layer 2A to form a metallic germano-silicide layer 8 by heat treatment, thereby forming source and drain regions, and a gate insulation film 10 and a gate electrode G are formed on the polycrystalline silicon/germanium layer in between the source and drain regions. Since the metallic layer is formed on the polycrystalline silicon/germanium layer, to form the metallic germano-silicide layer by heat treatment and to form the source and drain regions, the metallic germano-silicide layer can be formed through heat treatment at a lower temperature, in comparison with the case of forming the silicide from a single-crystal silicon and a metal or forming the silicide from polycrystalline silicon and metal.
COPYRIGHT: (C)2005,JPO&NCIPI

34. 发明专利

JP2003332259A Semiconductor device and manufacturing method therefor 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2003332259A
公开(公告)日：2003-11-21
申请号：JP2002133056
申请日：2002-05-08
申请人： Fujitsu Ltd , 富士通株式会社
发明人： IKEDA KEIJI , YAMASHITA YOSHIMI
IPC分类号： H01L21/28 , H01L21/285 , H01L21/331 , H01L21/338 , H01L29/20 , H01L29/45 , H01L29/737 , H01L29/778 , H01L29/812 , H01L33/20 , H01L33/32 , H01L33/40 , H01L33/00
CPC分类号： H01L29/452 , H01L21/28575 , H01L29/2003
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device for reducing contact resistance when an ohmic electrode is formed of a semiconductor with a large band gap. SOLUTION: A first film consisting of rare earth metal is formed on a surface of a semiconductor region of a substrate to which the semiconductor region formed of a compound semiconductor is exposed. A second film comprising silicon as a main component is formed on a surface of the first film. The first film and the second film are heated and a part which is brought into contact with the second film in the first film is silicided. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种当具有大带隙的半导体形成欧姆电极时降低接触电阻的半导体器件。解决方案：在由化合物半导体形成的半导体区域露出的基板的半导体区域的表面上形成由稀土金属构成的第一膜。在第一膜的表面上形成包含硅作为主要成分的第二膜。第一膜和第二膜被加热，并且与第一膜中的第二膜接触的部分被硅化。版权所有（C）2004，JPO

35. 发明专利

JPH07262861A ELECTROMAGNETIC RELAY 失效
公开(公告)号：JPH07262861A
公开(公告)日：1995-10-13
申请号：JP4760294
申请日：1994-03-18
申请人： FUJITSU LTD
发明人： IKEDA KEIJI , UCHINO HIROYUKI
IPC分类号： H01H50/54 , H01H1/02 , H01H1/023
摘要： PURPOSE:To provide an electromagnetic relay having contacts excellent in fusion bonding resistance, contact wear and tear resistance and contact transition resistance as for a small electromagnetic relay directly controlling motors incorporated in on-vehicle electrical equipment. CONSTITUTION:A make contact 22 is made out of metal of AgSnO, and also a break contact 23 is made out of metal of AgCu. Furthermore, in a movable contact 13, at least an area 14 in the side brought in contact with the make contact 22 is made out of metal of AgSnO, and an area 15 in the side brought in contact with the break contact 32 is made out of metal of AgCu.

36. 发明专利

JPH06214574A SILENCING CASE 失效
公开(公告)号：JPH06214574A
公开(公告)日：1994-08-05
申请号：JP622193
申请日：1993-01-18
申请人： FUJITSU LTD
发明人： TANAKA AKIRA , MIURA TAKASHI , IKEDA KEIJI , UCHINO HIROYUKI , MOTOYAMA TSUTOMU , HARAYAMA HIDETO
IPC分类号： G10K11/162 , G10K11/16 , H01H50/02
摘要： PURPOSE:To improve a silencing effect with the silencing case which is a molded product to cover a sound producing body by forming this case of a heavy metal powder-contg. synthetic resin prepd. by mixing heavy metal powder or powder essentially consisting of this heavy metal powder into a synthetic resin. CONSTITUTION:An electromagnetic case 11 is constituted by covering an electromagnetic relay body 12 with the silencing case 10. The material of the silencing case 10 is tungsten power-contg. '6-NylonR' resin formed by mixing tungsten powder at a prescribed ratio with '6-NylonR' and its sp. gr. is, for example, 8. The reason for using the '6-NylonR' as the base material lies in that this nylon is liable to be mixed with the metallic powder and is inexpensive. The silencing case 10 has no problems is terms of an electrical insulation characteristic, is free from chipping and other defects and is well molded. In addition, there are less variations in the compsn. among the individual silencing cases and the quality thereof is constant. Then, the substantially higher silencing effect than with the conventional embodiments is obtd. and this effect is obtainable without increasing the size of the case at all.

37. 发明专利

JPH0660786A ELECTROMAGENTIC RELAY 失效
公开(公告)号：JPH0660786A
公开(公告)日：1994-03-04
申请号：JP21188192
申请日：1992-08-10
申请人： FUJITSU LTD
发明人： KOBAYASHI FUMIYUKI , IKEDA KEIJI , UCHINO HIROYUKI
IPC分类号： H01H50/30 , H01H50/56
摘要： PURPOSE:To reduce various sounds internally generated in a sound insulating type electromagnetic relay at operation and release without lowering the characteristic as the electromagnetic relay, realize its miniaturization and reduction in cost to meet the requirement of customers, and improve productivity. CONSTITUTION:In an electromagnetic relay, the tongue piece-like double face contact area of a movable contact spring 22c situated adjacent to break contact terminal side between the contact areas of break contact terminal 71a and make contact terminal 71b arranged so that the contact areas forming free ends are opposed in parallel to each other is reciprocated between the contact areas to switch a circuit. On the break contact terminal 71a and make contact terminal 71b formed by superposing two terminal plates integrated only in two positions near the free end side end side and the other end side end side, vibrating energy absorbing areas 71-1 are formed in the areas excluding the respective terminal fixed positions in the longitudinal middle.

38. 发明专利

JPH04292235A ON-VEHICLE ELECTRICAL EQUIPMENT SYSTEM 失效
公开(公告)号：JPH04292235A
公开(公告)日：1992-10-16
申请号：JP5293991
申请日：1991-03-19
申请人： FUJITSU LTD
发明人： IKEDA KEIJI , HANADA HIROTSUGU
IPC分类号： B60R16/02
摘要： PURPOSE:To simplify the structure of wiring in a car as well as to make improvements in safety and productivity in regard to constitution of a car- mounted electrical equipment system. CONSTITUTION:A car-mounted electrical equipment system being composed of an operating switch group around a driver's seat and an electromagnetic relay group operating equipment corresponding to each switch in the switch group situated in and around a vehicle consists of a control switch group 11 provided with a controller 11a doubly transmitting an operating signal set up at each switch in the operating switch group to a power line connected between a battery and the electrical equipment and a control electromagnetic relay group 12 provided with a receiving part 12a discriminately receiving the plural operating signals being doubly transmitted to the power line situated in and around the equipment and operating an electromagnetic relay having the equipment corresponding to the operating switch operated.

39. 发明专利

JPH0451109A ELECTROMAGNETIC ACTUATOR 失效
公开(公告)号：JPH0451109A
公开(公告)日：1992-02-19
申请号：JP16031090
申请日：1990-06-19
申请人： FUJITSU LTD
发明人： TAJIMA SHUTARO , MIURA TAKASHI , IKEDA KEIJI
IPC分类号： G02B26/08
摘要： PURPOSE:To obtain the electromagnetic actuator which has superior shock resistance and small power consumption by pressing one side of an L-shaped armature against a yoke by a 1st spring which is made to abut nearby a root in an abutting state nearby and a 2nd spring which is made to abut nearby a free end. CONSTITUTION:The electromagnetic actuator consists of an electromagnet 35 constituted by uniting an iron core 31 and the yoke 32 in a U shape and making the iron core 31 penetrate a coil 34 wound around a bobbin 33 and the L-shaped armature 36 which is supported in a freely oscillatory state on the ridge of the yoke 32. The armature 36 is pressed against the flank of the yoke 32 by the leaf spring 37 nearby the root of one side 36b and by the compression spring 38 nearby the free end as a means which restores the armature 36 when a current applied to the yoke 32 is cut off and prevents the armature 36 supported by the yoke 32 from shifting in position. Consequently, even when the restoring forces of the springs are small, the armature become hard to move and variance between the restoring forces is reduced, so that the electromagnetic actuator which has superior shock resistance and small power consumption is obtained.

40. 发明专利

JPH01192002A MAGNETIC RECORDING SYSTEM 失效
公开(公告)号：JPH01192002A
公开(公告)日：1989-08-02
申请号：JP1773288
申请日：1988-01-28
申请人： FUJITSU LTD
发明人： IKEDA KEIJI , TANJI SHIGEO , KAJITANI HIROSHI
IPC分类号： G11B5/09
摘要： PURPOSE:To always perform the recording of data with the same format in spite of a travel direction by discriminating the travel direction of a card by an encoder, and switching the shift direction of the data in a shift register in a forward/backward direction based on a discriminated result. CONSTITUTION:The forward/backward direction of the shift direction of the card 6 is discriminated by the encoder 1. And write data 33 are outputted sequentially to a magnetic recording means 5 based on the discriminated result. The shift direction of the data in the shift register 3 is switched so as to obtain the same format of recorded data in spite of the travel direction of a magnetic card 6. Therefore, since the shift direction of the data in the shift register 3 is changed by a travel direction signal from the encoder 1, it is possible to reverse the delivery order of the bit of the write data 33 easily, and to always obtain data recording with the same format, which improves the degree of freedom of a system.

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