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    • 33. 发明专利
    • INCOMPLETE COMBUSTION GAS SENSOR
    • JPH07140101A
    • 1995-06-02
    • JP28969193
    • 1993-11-19
    • FUJI ELECTRIC CO LTD
    • KAWADA YASUYUKINUMATA JUNKOICHIMURA TAKESHIGETSUDA KOICHI
    • G01N27/12
    • PURPOSE:To prevent the interference of organic solvent gas by forming a gas sensitive layer, a catalyst layer, and an oxidation/combustion layer sequentially on a substrate and burning the organic solvent gas selectively. CONSTITUTION:A gas sensitive layer 3 comprises a thin film of n-type metal oxide semiconductor, a catalyst layer 4 comprises an ultrathin film of two kinds of noble metal, and an oxidation/combustion layer 5 comprises a thick film of n-type metal oxide semiconductor carrying a noble metal. The oxidation/ combustion layer 5 burns an organic solvent gas selectively and removing the organic solvent gas. On the other hand, activating oxygen is generated by a noble metal catalyst carried on the oxidation/combustion layer 5. The activating gas is adsorbed by the gas sensitive layer 3 to increase the resistance of a sensor in the air thus increasing the difference from the resistance of the sensor in an incomplete combustion gas. The catalyst layer 4 activates carbon monoxide gas and hydrogen gas to accelerate substitution for the oxygen in the gas sensitive layer 3.
    • 34. 发明专利
    • THICK-FILM GAS SENSOR
    • JPH06288953A
    • 1994-10-18
    • JP22766293
    • 1993-09-14
    • FUJI ELECTRIC CO LTD
    • KAWADA YASUYUKI
    • G01N27/12
    • PURPOSE:To obtain a thick-film gas sensor having a stable resistance during operation and excellent initial ringing characteristics by successively forming a first coating layer, first catalyst layer, gas sensitive layer, second catalyst layer, and second coating layer on a substrate. CONSTITUTION:A first coating layer 3, first catalyst layer 4, gas sensitive layer 5, second catalyst layer 6, and second coating layer 7 are successively formed on a substrate 1. A heater 9 is formed of ruthenium oxide. The substrate 1 is made of an insulator having excellent thermal conductivity and constitutes the substrate of this thick film gas sensor. The coating layers 3 and 7 improve the selectivity of this sensor against detecting gases and increase the air supplying quantity to the gas sensitive layer 5. The catalyst layers 4 and 6 increase the oxygen adsorbing speed of the layer 5 and maintains the adsorbed amount of air in the layer 5. Thus a highly reliable thick-film gas sensor having stable resistance during operation and short initial ringing time is obtained.
    • 35. 发明专利
    • THICK-FILM GAS SENSOR
    • JPH06186191A
    • 1994-07-08
    • JP33478292
    • 1992-12-16
    • FUJI ELECTRIC CO LTD
    • KAWADA YASUYUKI
    • G01N27/12
    • PURPOSE:To eliminate influence due to initial rumbling or supply voltage fluctuation and to improve the stability and reliability of sensitivity by sandwiching a gas-sensitive layer and a catalyst layer with two covering layers where a precious metal catalyst is carried by a metallic oxide semiconductor. CONSTITUTION:A thick-film gas sensor comprises a substrate 1 on which are sequentially formed a covering layer 3 of tin oxide containing 1-5% platinum, a gas-sensitive layer 4 consisting of tin oxide, a catalyst layer 5 of palladium oxide, and a covering layer 6 which is prepared under the same conditions as those of the layer 3. The covering layers 3 and 6 serve to improve the selectivity for detection gas and increase supply of air to the gas-sensitive layer 4. Also, the catalyst layer 5 consisting of a precious metal oxide (palladium oxide) increases the amount of suction of oxygen and the suction speed in the gas-sensitive layer 4, thus obtaining a sensor with superior sensitivity stability, initial rumbling characteristics, and voltage fluctuation characteristics.
    • 36. 发明专利
    • JPH05249061A
    • 1993-09-28
    • JP4894692
    • 1992-03-06
    • FUJI ELECTRIC CO LTD
    • KAWADA YASUYUKI
    • G01N27/12
    • PURPOSE:To obtain a high-sensitivity gas sensor easy to manufacture. CONSTITUTION:On a silicon substrate 2 subjected to offcut at a prescribed angle, a first insulating layer 2, a heater 6, a second insulating layer 13 and a gas-sensitive body 9 are provided in lamination sequentially and then a cavity part 11 is made, so that a diaphragm provided with the heater and the gas- sensitive body be formed. The crystal orientation property and the surface indentation of the gas-sensitive body 9 are controlled by the crystal orientation property and the surface indentation of the silicon substrate, whereby a sensor of high sensitivity is obtained. Besides, the first insulating layer is prepared by laminating a thermal oxide film 3 and a silicon nitride film 4 so as to offset an internal stress, and thereby the damage of the diaphragm at the time of manufacture is prevented.
    • 38. 发明专利
    • CONTACT-COMBUSTION-TYPE CARBON MONOXIDE GAS SENSOR
    • JPH08226909A
    • 1996-09-03
    • JP3329995
    • 1995-02-22
    • FUJI ELECTRIC CO LTD
    • KAWADA YASUYUKITSUDA KOICHI
    • G01N27/16
    • PURPOSE: To provide a contact-combustion-type carbon monoxide gas sensor with good gas selectivity having high sensitivity only against carbon monoxide gas. CONSTITUTION: A gas sensing element 3 and a compensating element 4 used while being built into branches of a bridge circuit are held by metallic pins 6 fixed through a base 5 of an insulator and covered with a cap. The gas sensing element 3 comprises a temperature measuring resistor and an oxidation combustion catalyst layer for coating the resistor, wherein the catalyst layer is a sintered body of a mixture of α-ferric oxide fine powder holding a gold catalyst and aluminum oxide powder holding a platinum catalyst and a palladium catalyst. The compensating element 4 comprises a temperature measuring resistor and a metal oxide layer for coating the resistor, wherein the metal oxide layer is a sintered body of a mixture of α-ferric oxide fine powder and aluminum oxide powder. In addition, a cap 8 comprising glass fiber filter paper and a polyfreon filter is put over the elements.
    • 39. 发明专利
    • CARBON MONOXIDE GAS SENSOR
    • JPH07260728A
    • 1995-10-13
    • JP7395094
    • 1994-03-18
    • FUJI ELECTRIC CO LTD
    • KAWADA YASUYUKIICHIMURA TAKESHIGETSUDA KOICHI
    • G01N27/12
    • PURPOSE:To obtain a sensor with high sensitivity without receiving any interference of combustible gas by providing a pair of electrodes, a gas sensitive layer, catalyst layers and, an oxidation combustion layer on a first main face of an insulation board, and setting another pair of the electrodes and a heater on a second main face. CONSTITUTION:Electrodes 2A, a gas sensitive layer 3, catalyst layers 4, 5, 6 and an oxidation combustion layer 7 are laminated on a first main face of an insulation board 1 in order. A heater 10 composed of electrodes 2B and a ruthenium oxide resistor is provided on a second face of the board 1. The sensitive gas layer 3 is a thin film of tin oxide containing ruthenium and rhodium formed by a sputtering method, and combustible gas having a large molecular structure cannot be diffused in the inside. The catalyst layer 4 is a platinum ultrathin film, a catalyst layer 5 a palladium oxide ultrathin film, a catalyst layer 6 is a platinum ultrathin film, and these are laminated in order on the gas sensitive layer 3 by the sputtering method. The oxidation combustion layer 7 is a thick film composed of gamma-alumina powder, and carries platinum, it coats the gas sensitive layer 3 and the catalyst layers 4-6.
    • 40. 发明专利
    • HYDROGEN GAS SENSOR
    • JPH07128268A
    • 1995-05-19
    • JP29265693
    • 1993-10-28
    • FUJI ELECTRIC CO LTD
    • KAWADA YASUYUKI
    • G01N27/12
    • PURPOSE:To provide a hydrogen gas sensor having no interference of an organic solvent gas by providing an electrode, a gas sensitive layer, a catalyst layer, an oxidizing combusting layer, and a heater on a base. CONSTITUTION:An electrode 2, a gas sensitive layer 3, a catalyst layer 4, and an oxidizing combusting layer 5 are successively laminated on the first main surface of a base 1. A heater 8 consisting of an electrode 2A and ruthenium oxide is formed on the second main surface of the base 1. The gas sensitive layer 3 is a thin film of an n-type metal oxide semiconductor prepared by spattering, and the catalyst layer 4 is an extremely thin film of a noble metal, the oxidizing combusting layer 5 is a thick film of the n-type metal oxide semiconductor supporting the noble metal. The oxidizing combusting layer 5 selectively burns an organic solvent gas and guides hydrogen gas and an inflammable gas to the gas sensitive layer 3. The gas sensitive layer 3 is a columnar crystal formed by spattering, and the inflammable gas can not be diffused into the gas sensitive layer 3. The hydrogen gas is activated by the catalyst layer 4 and guided into the gas sensitive layer 3. Thus, high selectivity of responding to only hydrogen gas can be provided.