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31. 发明专利

JP2008218286A Plasma generator 有权
标题翻译：等离子发生器
公开(公告)号：JP2008218286A
公开(公告)日：2008-09-18
申请号：JP2007056002
申请日：2007-03-06
申请人： Nissin Ion Equipment Co Ltd , 日新イオン機器株式会社
发明人： SAKAI SHIGEKI
IPC分类号： H05H1/46 , C23C14/32 , H01J37/317 , H01L21/265
CPC分类号： H05H1/46 , H01J37/32082 , H01J37/32935
摘要： PROBLEM TO BE SOLVED: To quickly detect the blowout of an antenna cover in a high-frequency discharge type plasma generator. SOLUTION: The plasma generator 10 comprises an antenna 26 which is arranged in a plasma generation container 12 and emits high frequencies, the antenna cover 42 which covers the whole antenna 26 in the plasma generation container 12 and is formed of an insulator, a direct-current voltage measuring instrument 60 for measuring a direct-current voltage V D between the antenna 26 and the plasma generation container 12, and a comparator 80 for outputting an alarm signal S W by comparing the measured direct current voltage V D with a standard value V R , when the former's absolute value is larger than the latter's absolute value. When the antenna cover 42 is blown out, the alarm signal S W is outputted since the direct current voltage V D equivalent to plasma potential is generated on the antenna 26 as plasma 20 is brought into contact with the antenna 26 at a blown-out location 44. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：快速检测高频放电型等离子体发生器中的天线盖的喷出。解决方案：等离子体发生器10包括布置在等离子体产生容器12中并发射高频的天线26，覆盖等离子体产生容器12中的整个天线26并由绝缘体形成的天线盖42，用于测量天线26和等离子体产生容器12之间的直流电压V SB SB的直流电压测量装置60以及用于输出警报信号S W < / SB>，当前者的绝对值大于后者的绝对值时，通过将测得的直流电压V SB> D 与标准值V SB SB比较。当天线罩42被吹出时，由于等离子体电位等效于等离子体电位的直流电压V SB =等于等离子体20，所以输出报警信号S W 在吹出位置44与天线26接触。版权所有（C）2008，JPO＆INPIT

32. 发明专利

JP2008146863A Ion beam measuring method 审中-公开
标题翻译：离子束测量方法
公开(公告)号：JP2008146863A
公开(公告)日：2008-06-26
申请号：JP2006329507
申请日：2006-12-06
申请人： Nissin Ion Equipment Co Ltd , 日新イオン機器株式会社
发明人： IKEJIRI TADASHI , CHO IKO , TANAKA KOHEI
IPC分类号： H01J37/04 , H01J37/317
摘要： PROBLEM TO BE SOLVED: To provide a measuring method measuring in a simple way an advance angle in an X-direction of ribbon-shaped ion beams at a plurality of positions in a Y-direction (a length direction).
SOLUTION: In the ion beam measuring method, center positions x
1 , x
2 of ion beams 2 in an X-direction are measured at substantially the same position in a Y-direction with the use of two beam monitors 10, 20 fitted at an upstream side and a downstream side, respectively, of the ion beams 2 in an advance direction Z, each equipped with a plurality of beam detectors 12, 22 in an X-direction, and capable of movable in a Y-direction, an advance angle θ of the ion beams 2 in an X-direction is measured based on a distance L2 between the measured center positions in the X-direction as well as a distance L1 of the two beam monitors 10, 20 in the Z-direction, and that, measurement of advance angles θ is carried out at a plurality of positions in the Y-direction by moving the both beam monitors 10, 20 in the Y-direction.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种以简单的方式测量在Y方向（长度方向）上的多个位置的带状离子束的X方向上的提前角的测量方法。解决方案：在离子束测量方法中，离子束2在X方向上的中心位置x 1 ，x 2 在基本相同的位置使用分别装配在离子束2的前进方向Z的上游侧和下游侧的两个光束监视器10,20的Y方向，每个配备有多个光束检测器12,22 X方向，并且能够沿Y方向移动，基于X方向上的测量中心位置之间的距离L2以及距离X方向的距离L2来测量离子束2在X方向上的提前角θ 沿Z方向的两个光束监视器10,20的L1，并且通过在Y方向上移动两个光束监视器10,20，在Y方向上的多个位置处执行提前角度θ的测量。版权所有（C）2008，JPO＆INPIT

33. 发明专利

JP2008128660A Ion beam measuring device 有权
标题翻译：离子束测量装置
公开(公告)号：JP2008128660A
公开(公告)日：2008-06-05
申请号：JP2006310403
申请日：2006-11-16
申请人： Nissin Ion Equipment Co Ltd , 日新イオン機器株式会社
发明人： YAMASHITA TAKATOSHI , IKEJIRI TADASHI , HISAZAWA KEIKO
IPC分类号： G01T1/29 , H01J37/04 , H01J37/317
摘要： PROBLEM TO BE SOLVED: To provide an ion beam measuring device capable of an improvement in measurement precision by reducing the measurement error of the ion beam current.
SOLUTION: The ion beam measuring device 20 includes the Faraday cup 22 having the entrance 24 for receiving the ion beam 2, the suppression electrode 26 which is applied with positive bias voltage referring to the grounding potential provided at the vicinity of upstream of the entrance 24 of the Faraday cup 22, and the magnet 30 arranged outside of the Faraday cup 22 for making the magnetic field B in the Faraday cup 22 in an intersecting direction to the incident direction of the ion beam 2.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供能够通过降低离子束电流的测量误差来提高测量精度的离子束测量装置。解决方案：离子束测量装置20包括具有用于接收离子束2的入口24的法拉第杯22，抑制电极26参考在上游附近提供的接地电位施加正偏压法拉第杯22的入口24和布置在法拉第杯22外部的磁体30，用于使法拉第杯22中的磁场B沿与离子束2的入射方向交叉的方向。版权所有：（C）2008，JPO＆INPIT

34. 发明专利

JP2008124083A Measuring method, and measuring apparatus of crystallization ratio 有权
标题翻译：测量方法和结晶比例的测量装置
公开(公告)号：JP2008124083A
公开(公告)日：2008-05-29
申请号：JP2006303263
申请日：2006-11-08
申请人： Nissin Ion Equipment Co Ltd , Tokyo Univ Of Agriculture & Technology , 国立大学法人東京農工大学 , 日新イオン機器株式会社
发明人： SAMEJIMA TOSHIYUKI , ANDO NOBUYUKI
IPC分类号： H01L21/66 , G01B11/06 , G01N21/27 , H01L21/265
摘要： PROBLEM TO BE SOLVED: To provide a non-destructive method for measuring in higher accuracy a crystallization ratio in the depth direction of a semiconductor region that has been changed to an amorphous region with implanted ions by measuring a reflectivity of a polycrystal silicon.
SOLUTION: A lamination structure of a plurality of crystallization ratios corresponding to reflectivity spectrum obtained by calculation for the same spectrum as the reflectivity spectrum measured actually is identified by considering distribution of crystallization ratio in the depth direction of semiconductor as a structure formed of a plurality of layers with different crystallization ratios.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种非破坏性方法，通过测量多晶硅的反射率，以更高的精度测量已经通过注入离子改变为非晶区域的半导体区域的深度方向的结晶化率。解决方案：通过考虑与实际测量的反射率光谱相同的光谱计算得到的反射光谱的多个结晶比的层叠结构，通过考虑半导体的深度方向上的结晶化比例的分布来确定为由具有不同结晶比的多个层。版权所有（C）2008，JPO＆INPIT

35. 发明专利

JP2008112673A Ion implanting device 有权
标题翻译：离子植入装置
公开(公告)号：JP2008112673A
公开(公告)日：2008-05-15
申请号：JP2006295858
申请日：2006-10-31
申请人： Nissin Ion Equipment Co Ltd , 日新イオン機器株式会社
发明人： FUJITA HIDEKI
IPC分类号： H01J37/04 , H01J37/317
摘要： PROBLEM TO BE SOLVED: To improve the uniformity of an longitudinal direction (Y direction) ion beam current density distribution at an implantation position to a substrate.
SOLUTION: This ion implanting device includes an ion source 100 for generating an ion beam 50, an electron beam source Gn for emitting an electron beam 138 scanned in the Y direction to generate plasma 12, a power source 114 for the electron beam source, an ion beam monitor 80 for measuring the Y direction beam current density distribution of the ion beam 50 in the vicinity of the implanting position, and a control device 90. The control device 90 controls the power source 114 based on the measured data from the monitor 80, thereby increasing the scanning speed of the electron beam 138 at a position corresponding to the monitor point at which the beam current density measured by the monitor 80 is large, but decreasing the scanning speed of the electron beam 138 at a position corresponding to the monitor point at which the beam current density measured by the monitor 80 is small, which provides the uniformity of the Y direction beam current density measured by the monitor 80.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提高植入位置到基板的纵向（Y方向）离子束电流密度分布的均匀性。解决方案：该离子注入装置包括用于产生离子束50的离子源100，用于发射沿Y方向扫描的电子束138以产生等离子体12的电子束源Gn，用于电子束的电源114 源，用于测量离子束50在植入位置附近的Y方向束电流密度分布的离子束监视器80以及控制装置90.控制装置90基于来自监视器80，从而在与由监视器80测量的束电流密度大的监视点相对应的位置处增加电子束138的扫描速度，但是在对应的位置减小了电子束138的扫描速度到由监视器80测量的光束电流密度小的监视点，这提供了由监视器80测量的Y方向光束电流密度的均匀性。右：（C）2008，JPO＆INPIT

36. 发明专利

JP2008084679A Electromagnet for analysis, control method therefor, and ion implantation apparatus 有权
标题翻译：用于分析的电磁波，其控制方法和离子植入装置
公开(公告)号：JP2008084679A
公开(公告)日：2008-04-10
申请号：JP2006262827
申请日：2006-09-27
申请人： Nissin Ion Equipment Co Ltd , 日新イオン機器株式会社
发明人： YAMASHITA TAKATOSHI , IKEJIRI TADASHI , TANAKA KOHEI , KINOYAMA TOSHIAKI , TAMURA SHIGEHISA , TANAKA HIDEYUKI , OGATA KANICHIROU
IPC分类号： H01J49/30 , H01J37/317
摘要： PROBLEM TO BE SOLVED: To provide an electromagnet for analysis which enables size reduction for the analyzing electromagnet by reducing a projecting distance into a beam entering/leaving direction from the yoke of the bridging part of a coil, and which enables reduction in energy consumption. SOLUTION: This electromagnet for analysis 200 is equipped with a first inside coil 206, a second inside coil 212, three first outside coils 218, three second outside coils 224, and the yoke 230. The inside coils 206, 212 are respectively saddle-form coils and both collaborate and generate the main magnetic field to bend ion beam in the X-direction. Each of outside coils 218, 224 are respectively the saddle-form coils and generate an auxiliary magnetic field to carry out correction of the main magnetic field. The respective coils have a constitution such that an insulating sheet and a conductive sheet are made mutually overlapping, wound for a plurality of times and laminated on the outer peripheral face of a laminated insulator, and that a notch part is installed at a fan-like cylindrically laminated coil, to form the laminated insulator on the outer peripheral face. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于分析的电磁体，其能够通过从线圈的桥接部分的轭减小到入射/离开方向的射束的突出距离来实现分析电磁体的尺寸减小，并且能够减少能源消耗。解决方案：该用于分析的电磁体200配备有第一内部线圈206，第二内部线圈212，三个第一外部线圈218，三个第二外部线圈224和轭230.内部线圈206,212分别鞍形线圈两者协同并产生主磁场以在X方向上弯曲离子束。每个外部线圈218,224分别是鞍形线圈，并产生辅助磁场，以执行主磁场的校正。各线圈具有使绝缘片和导电片互相重叠的结构，多次缠绕并层叠在层压绝缘体的外周面上，并且切口部安装在扇形在外周面上形成层压绝缘体。版权所有（C）2008，JPO＆INPIT

37. 发明专利

JP2008059994A Ion beam irradiation apparatus and ion beam irradiation method 有权
标题翻译：离子束辐照装置和离子束辐射方法
公开(公告)号：JP2008059994A
公开(公告)日：2008-03-13
申请号：JP2006237967
申请日：2006-09-01
申请人： Nissin Ion Equipment Co Ltd , 日新イオン機器株式会社
发明人： NAKAYA MAKOTO
IPC分类号： H01J37/317 , H01L21/265
摘要： PROBLEM TO BE SOLVED: To provide an ion beam irradiation apparatus for injecting an ion beam uniformly into a substrate and having high flexibility in movement of a holder.
SOLUTION: The ion beam irradiation apparatus 1 which irradiates a substrate held by a holder 9 provided in a vacuum chamber 10 with ion beam advancing along the Z-axis direction, comprises a Z-axis slide mechanism 3 moving the holder 9 along the Z-axis direction and a Y-axis slide mechanism 2 making the holder 9 to rise and fall along Y-axis direction. The Z-axis slide mechanism 3 includes a Z-axis slider unit 6 provided with the holder 9 and sliding back and forth along the Z-axis direction, a Z-axis guide 7 guiding the Z-axis slider unit 6 along the Z-axis direction, a Z-axis driving motor 8 provided to make the Z-axis slider unit 6 slide back and forth. The Y-axis slide mechanism 2 includes a Y-axis guide 4 guiding the Z-axis guide 7 along the Y-axis direction, and a Y-axis driving motor 5 provided to make the Z-axis guide 7 slide back and forth along the Y-axis direction.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种离子束照射装置，用于将离子束均匀地注入到基底中并且在保持器的移动中具有高的灵活性。解决方案：离子束照射装置1照射设置在真空室10中的保持件9的基板，离子束沿着Z轴方向前进，包括Z轴滑动机构3，沿着Z轴方向移动保持器9 Z轴方向和Y轴滑动机构2，使支架9沿着Y轴方向上升和下降。 Z轴滑动机构3包括设置有保持件9并沿着Z轴方向前后滑动的Z轴滑块单元6，沿着Z轴滑动单元6沿着Z轴滑动单元6引导Z轴滑块单元6。设置成使Z轴滑块单元6前后滑动的Z轴驱动电动机8。 Y轴滑动机构2包括沿着Y轴方向引导Z轴引导件7的Y轴引导件4和设置成使Z轴引导件7沿着Y轴方向前后滑动的Y轴驱动马达5 Y轴方向。版权所有（C）2008，JPO＆INPIT

38. 发明专利

JP2008034230A Ion implantation apparatus and its adjustment method 有权
标题翻译：离子植入装置及其调整方法
公开(公告)号：JP2008034230A
公开(公告)日：2008-02-14
申请号：JP2006206200
申请日：2006-07-28
申请人： Nissin Ion Equipment Co Ltd , 日新イオン機器株式会社
发明人： YAMASHITA TAKATOSHI , TAMURA SHIGEHISA
IPC分类号： H01J27/02 , H01J37/04 , H01J37/08 , H01J37/317
摘要： PROBLEM TO BE SOLVED: To provide an ion implantation apparatus capable of improving uniformity of a beam current density distribution in the Y-direction of an ion beam in a ribbon shape at an injection position.
SOLUTION: The ion implantation apparatus is provided with a plurality of gas introducing parts 38 introducing raw material gas 34 into an ion source 2 generating a ribbon-shape ion beam 4 and arranged in the Y-direction, and a plurality of flow regulators 36 controlling the flow of the introducing raw material gas 34. Furthermore, it is provided with a beam measuring instrument 46 measuring a beam current density distribution in the Y-direction of the ion beam 4, and a control device 50 controlling each flow regulator 36 based on the measured information and uniformalizing the beam current density distribution in the Y-direction of the ion beam 4 at an injection position.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种离子注入装置，能够提高注射位置处的带状的离子束的Y方向上的束电流密度分布的均匀性。解决方案：离子注入装置设置有多个气体引入部38，其将原料气体34引入到产生带状离子束4并且沿Y方向排列的离子源2和多个流调节器36控制引入原料气体34的流动。此外，其设置有测量离子束4的Y方向上的束电流密度分布的光束测量仪46和控制每个流量调节器 36，基于所测量的信息，并且在注射位置使离子束4的Y方向上的束电流密度分布均匀化。版权所有（C）2008，JPO＆INPIT

39. 发明专利

JP2007335110A Ion beam radiator and manufacturing method of semiconductor device 有权
标题翻译：离子束散热器和半导体器件的制造方法
公开(公告)号：JP2007335110A
公开(公告)日：2007-12-27
申请号：JP2006162394
申请日：2006-06-12
申请人： Kyoto Univ , Nissin Ion Equipment Co Ltd , 国立大学法人京都大学 , 日新イオン機器株式会社
发明人： ISHIKAWA JUNZO , DAN NICOLAESCU , GOTO YASUHITO , SAKAI SHIGEKI
IPC分类号： H01J37/317 , C23C14/48 , H01J37/073 , H01L21/265
CPC分类号： H01J37/026 , H01J2237/0041 , H01J2237/31701
摘要： PROBLEM TO BE SOLVED: To provide a device capable of effectively suppressing divergence of ion beam caused by spatial charges by efficiently neutralizing the spatial charges of ion beam using a field-emission electron source.
SOLUTION: The ion beam radiator is equipped with a field-emission electron source 10 which is provided near the path of ion beam 2 to emit electrons 12. The field-emission electron source 10 is so arranged that the incident angle of the electron 12 formed from the direction parallel to the advancing direction of the ion beam 2 and emitted from it is in the range of -15° to +45°(inward direction of ion beam 2 as positive and outward one as negative).
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种能够通过使用场致发射电子源有效地中和离子束的空间电荷来提供能够有效地抑制由空间电荷引起的离子束的发散的装置。解决方案：离子束辐射器配备有场发射电子源10，其设置在离子束2的路径附近以发射电子12.场致发射电子源10被布置成使得入射角从离子束2的前进方向平行的方向形成并从其发射的电子12在-15°〜+ 45°的范围（离子束2的向内方向为正向外侧为负）。版权所有（C）2008，JPO＆INPIT

40. 发明专利

JP2007080691A Deflection electromagnet and ion beam irradiation device 有权
标题翻译：偏转电磁波和离子束辐射装置
公开(公告)号：JP2007080691A
公开(公告)日：2007-03-29
申请号：JP2005267426
申请日：2005-09-14
申请人： Nissin Ion Equipment Co Ltd , 日新イオン機器株式会社
发明人： FUJITA HIDEKI
IPC分类号： H01J37/317
摘要： PROBLEM TO BE SOLVED: To provide a deflection electromagnet which suppresses dispersion of ion beams by improving trapping of electrons in magnetic pole spacing by reducing loss of electrons by E×B drift from the magnetic pole spacing and neutralizing efficiently space charges of ion beams by the trapped electrons.
SOLUTION: The deflection electromagnet 30a has a first and a second magnetic poles 32a, 32b which are opposed to each other having a magnetic pole spacing 34 in between in which ion beams 4 pass. Furthermore, a permanent magnet group 54 is provided which forms a mirror magnetic field in the magnetic pole spacing 34 that is weak in magnetic field in the central area in ion beam passing direction and stronger in magnetic field in the entrance and the exit side than the central area. The permanent magnet group 54 comprises a first pair of permanent magnets 54a arranged at the entrance side than the center of the magnetic spacing 34 and a second pair of permanent magnets 54b arranged at the exit side.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种偏转电磁体，其通过改善磁极间隔中的电子俘获来抑制离子束的分散，通过减小E×B漂移从磁极间隔的电子损失并有效地中和离子的空间电荷被捕获的电子束。解决方案：偏转电磁体30a具有彼此相对的第一和第二磁极32a，32b，离子束4通过其间具有磁极间隔34。此外，设置永磁体组54，其在离子束通过方向上的中心区域的磁场弱的磁极间隔34中形成镜面磁场，并且在入射侧和出射侧的磁场中的磁场强度比中心区。永磁体组54包括布置在磁性间隔34的中心的入口侧的第一对永磁体54a和布置在出口侧的第二对永磁体54b。版权所有（C）2007，JPO＆INPIT

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