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    • 23. 发明专利
    • Light-emitting device, electronic instrument and method for manufacturing light-emitting device
    • 发光装置,电子仪器及制造发光装置的方法
    • JP2009200220A
    • 2009-09-03
    • JP2008039830
    • 2008-02-21
    • Sony Corpソニー株式会社
    • ISHIDA YUICHIYAZAWA KAZUAKINAKAYAMA NORIKAZU
    • H01L33/02H01L33/06H01L33/32H01L33/62H01S5/343
    • H01L33/645H01L33/0079H01S5/0224H01S5/02415H01S5/0261H01S5/32341H01S2301/173
    • PROBLEM TO BE SOLVED: To provide a light-emitting device which can use power for driving the device itself to diffuse the heat of a light-emitting part effectively, an electronic instrument loading this, and a method for manufacturing the light-emitting device.
      SOLUTION: The light-emitting device 1 comprises: an EL (Electro-Luminescence) layer 6 which has a first conductive type first semiconductor layer 5 which is of either an n type or a p type, a second conductive type second semiconductor layer 3 opposite to the first conductive type, and an active layer 4 formed between the two layers concerned; and a first conductive type heat-dissipating layer 2 jointed to a side close to the second semiconductor layer 3 of an EL layer 6. In the heat-dissipating layer 2, since heat transportation by heat conduction and a Peltier effect is generated in a direction of leaving from the active layer 4, it is possible to dissipate the heat effectively. Thus, damage caused by the heat of the active layer 4 is suppressed, thus contributing to high brightness and a high output of the light-emitting device 1.
      COPYRIGHT: (C)2009,JPO&INPIT
    • 解决问题的方案为了提供一种发光装置,其能够利用电力来驱动装置本身以有效地扩散发光部件的热量,装载该发光装置的电子仪器,以及制造发光部件的方法, 发光装置。 解决方案:发光装置1包括:EL(电致发光)层6,其具有n型或ap型的第一导电型第一半导体层5,第二导电型第二半导体层 3与第一导电类型相对,以及形成在所涉及的两层之间的有源层4; 以及与EL层6的第二半导体层3靠近的一侧接合的第一导电型散热层2.在散热层2中,由于通过热传导和珀耳帖效应产生沿着方向 从有源层4离开,可以有效地散发热量。 因此,有源层4的热量引起的损伤被抑制,因此有助于发光装置1的高亮度和高输出。版权所有(C)2009,JPO&INPIT
    • 24. 发明专利
    • Semiconductor light source device
    • 半导体光源器件
    • JP2006294782A
    • 2006-10-26
    • JP2005111794
    • 2005-04-08
    • Hitachi Ltd株式会社日立製作所
    • NAKAZATO NORIOSUDO KIMIHIKO
    • H01L33/62H01L33/64
    • H01L33/645H01L25/0753H01L2224/45144H01L2224/48464H01L2224/73265H01L2924/10253H01L2924/181H01L2924/19107H01L2924/00H01L2924/00012
    • PROBLEM TO BE SOLVED: To provide a semiconductor light source device capable of manufacturing at low cost, and also cooling efficiently an LED element driven by a short pulse, without increasing the number of parts.
      SOLUTION: The light source device is provided with two or more light emitting diode chips 202 on a thermal diffusion board 201. Two or more light emitting diode chips are cooled by a Peltier device 208 which is a thermoelectric cooling element. A pair of members 208 (n), 208 (p) which constitute a Peltier device for cooling each light emitting diode chip, is electrically connected by a bump 207 on each light emitting diode chip. A light emitting diode chip and a Peltier device are integrally formed on a thermal diffusion board, respectively, and generation of heat in each light emitting diode chip is directly moved to a thermal diffusion plate or a heat dissipation plate.
      COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:提供一种能够以低成本制造的半导体光源装置,并且还可以有效地冷却由短脉冲驱动的LED元件,而不增加部件数量。 解决方案:光源装置在热扩散板201上设置有两个或更多个发光二极管芯片202.两个或更多个发光二极管芯片由作为热电冷却元件的珀耳帖装置208冷却。 构成用于冷却每个发光二极管芯片的珀尔帖装置的一对构件208(n),208(p)通过每个发光二极管芯片上的凸块207电连接。 发光二极管芯片和珀耳帖装置分别一体地形成在热扩散板上,并且每个发光二极管芯片中的热量的产生被直接移动到热扩散板或散热板。 版权所有(C)2007,JPO&INPIT
    • 28. 发明专利
    • Semiconductor element
    • 半导体元件
    • JPS5927568A
    • 1984-02-14
    • JP13770482
    • 1982-08-06
    • Mitsubishi Electric Corp
    • KAMEDA HIDEO
    • H01L27/15H01L31/12H01L33/62H01L33/64H01S5/022H01S5/024
    • H01L33/645H01L2224/48091H01L2224/48465H01L2924/01015H01S5/02228H01S5/02415H01S5/042H01L2924/00014H01L2924/00
    • PURPOSE:To stabilize the various characteristics of a semiconductor element chip by cooling a metal step by Peltier effect produced by flowing a current corresponding to the output signal of a temperature sensor from an n type semiconductor through the stem to a p type semiconductor, thereby enabling to maintain the temperature of the chip secured to the stem at the prescribed temperature value. CONSTITUTION:When the prescribed voltage is applied between an anode lead 12, a power lead 15 and a ground lead 20, a current flows from the lead 13 through a light emitting elemnt chip 1, a metal stem 3 and a p type semiconductor 5 to the lead 20, thereby allowing the chip 2 to emit a light. Simultaneously, a current corresponding to the temperature of the stem 3 detected by a temperature sensor 2a flows from an output card 17 through n type semiconductors 6, 7 and the stem 3 and through a p type semiconductor 5 to the lead 20, and the stem 3 commonly secured to the semiconductors 5, and 6, 7 is cooled by Peltier effect.
    • 目的:为了通过将对应于温度传感器的输出信号的电流从n型半导体通过杆传导到ap型半导体而产生的珀尔帖效应,通过冷却金属步骤来稳定半导体元件芯片的各种特性,从而能够 将固定在杆上的芯片的温度保持在规定的温度值。 构成:当在阳极引线12,电源引线15和接地引线20之间施加规定的电压时,电流从引线13通过发光元件芯片1,金属杆3和ap型半导体5流到 引线20,从而使芯片2发光。 同时,由温度传感器2a检测到的与杆3的温度相对应的电流从输出卡17通过n型半导体6,7和杆3并通过ap型半导体5流到引线20,并且杆3 通常固定到半导体5和6,7通过珀尔帖效应来冷却。