专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明专利

JPH10125807A METHOD OF FORMING GATE OXIDE FILM AND MANUFACTURING SEMICONDUCTOR MEMORY DEVICE 失效
公开(公告)号：JPH10125807A
公开(公告)日：1998-05-15
申请号：JP27340696
申请日：1996-10-16
申请人： TOSHIBA CORP
发明人： SATAKE HIDEKI , ITO HITOSHI
IPC分类号： H01L21/8247 , H01L21/316 , H01L27/115 , H01L29/78 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To form a gate oxide film having a semiconductor electric reliability by exposing the surface of semiconductor substrate or semiconductor layer to an oxygen-contg. atmosphere at several temps. with inserting an oxidizing furnace temp. lowering step therebetween. SOLUTION: The main surface of a semiconductor substrate or the surface of a semiconductor layer thereon is exposed to an oxygen-contg. atmosphere at several temps. with inserting an oxidizing furnace temp. lowering step therebetween to form an oxide film. The oxidizing furnace temp. rises up to 1000 deg.C in an nitrogen atmosphere e.g. wafers are fed into the furnace, an oxygen-gas is introduced, and the wafers are exposed to the oxygen-gas for one min. to do a first oxidizing. In an nitrogen-gas atmosphere the temp. is lowered at a rate of 3 deg.C/min to 850 deg.C, then an oxygen-gas is introduced and held at 850 deg.C for 70min. In an nitrogen-gas atmosphere the temp. is lowered at a rate of 3 deg.C/min to 600 deg.C and the wafers are taken out from the furnace.

22. 发明专利

JPH09251997A METHOD FOR FORMING SILICON OXIDE FILM 失效
公开(公告)号：JPH09251997A
公开(公告)日：1997-09-22
申请号：JP6097296
申请日：1996-03-18
申请人： TOSHIBA CORP
发明人： NARA AKIKO , ITO HITOSHI
IPC分类号： H01L21/31 , C23C16/40 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To reduce a remaining functional base which is a deterioration cause of film quality without giving an adverse influence to an underlayer, by a method wherein a substance which selectively acts on an organic functional base included in a silicon oxide film is added to material gas composed of oxygen source gas and organic system silane gas so that a silicon oxide film is formed on a substrate by a CVD method. SOLUTION: By use of oxygen source gas and organic system silane gas as material gas, a substance which selectively acts on an organic functional base included in a silicon oxide film is further added thereto so that silicon oxide film is formed on a substrate 104 by a CVD method. For this reason, a substrate support pedestal 103 for supporting the substrate 104 such as a silicon substrate etc., is provided in a vacuum bath 101, and the vacuum bath 101 is connected to a pipe 105 for supplying oxygen source gas, a pipe 115 for flowing tetramethylsilane as organic system silane, a pipe 125 for flowing toluene as an additive substance for improving film quality and a pipe 130 for flowing nitrogen gas.

23. 发明专利

JPH09237785A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH09237785A
公开(公告)日：1997-09-09
申请号：JP6883096
申请日：1996-03-25
申请人： TOSHIBA CORP
发明人： ITO HITOSHI , NARA AKIKO , NAGAMINE MAKOTO
IPC分类号： H01L21/31 , H01L21/316 , H01L21/768 , H01L23/29 , H01L23/522 , H01L23/532
摘要： PROBLEM TO BE SOLVED: To obtain an insulating film which can be buried into a fine region so as to be in a good shape by a method wherein the insulating film which is composed of the compound of silicon, oxygen, carbon and hydrogen and in which the content of carbon is larger than the content of silicon is used for at least one of a layer insulating film and a protective insulating film. SOLUTION: An insulating film which is composed of the compound of silicon, oxygen, carbon and hydrogen and in which the content of carbon is larger than the content of silicon is used for at least one of a layer insulating film and a protective insulating film, and a semiconductor device is obtained. Then, the insulating film is viscous at room temperature, its viscosity is at 100cps or higher and 300000cps or lower, or its relative permittivity is at 1.8 or higher and 3.2 or lower. In addition, the insulating film a structure of - Si(R1 )2 -O-Si(R1 )2 -O-}n as a main chain, and R1 is Cn H2n+1 (where n represents a positive integer). Therefore, it is possible to obtain the semiconductor device comprising the insulating film whose buried shape is good, whose permittivity is low and whose hygoscopicity is low.

24. 发明专利

JPH0936323A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0936323A
公开(公告)日：1997-02-07
申请号：JP18714895
申请日：1995-07-24
申请人： TOSHIBA CORP
发明人： TAKAHASHI SHINYA , ITO HITOSHI
IPC分类号： H01L21/76 , H01L21/225 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To restrain the etching of an element isolation oxide film or the like, and improve element characteristics, by eliminating an insulating film containing impurities by using heated hydrogen fluoride water vapor. SOLUTION: An element isolation oxide film 11, and a thermal oxidation layer 2 and a nitride film 3 which are used as etching protection films when a trench is formed are formed on a substrate 1. The trench has an aperture in the boundary part between the element isolation oxide film 11 and the oxide film 2 on an element region. A PSG film 6 of an SiO2 film containing phosphorus is deposited. Resist is spread on the PSG film 6, and exposure is performed without interposing a pattern mask. Resist having a specified depth is left in the trench, and the exposed part of the PSG film 6 is eliminated. After the resist is eliminated, an oxide film 8 is formed. By the heat treatment in an N2 atmospher, phosphorus is diffused in the substrate 1 from the PSG film 6 left in the trench, and a diffusion layer 9 is formed. Further by V-HF treatment, the PSG film is eliminated, and a desired impurity diffusion layer 9 is formed on the inner wall of the trench.

25. 发明专利

JPH06104204A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH06104204A
公开(公告)日：1994-04-15
申请号：JP25318492
申请日：1992-09-22
申请人： TOSHIBA CORP
发明人： YODA TAKASHI , WATANABE TORU , KAJI SHIGEHIKO , ITO HITOSHI , OKANO HARUO
IPC分类号： H01L21/28 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To provide a manufacture of a semiconductor device, in which a metal layer having uniform film quality and film thickness and being used for burying a contact hole is obtained even when a transition-metal silicide layer is laid on a semiconductor surface. CONSTITUTION:Transition-metal silicide layers 22P, 22N are formed onto the surfaces of silicon 12, 14 exposed to the bottom of a contact hole 18. The surfaces of the transition-metal silicide layers 22P, 22N are etched by using a gas employing a compound containing at least one element in fluorine and chlorine as a component or a gas using at least one element in fluorine and chlorine as one constituent. Metallic layers 26 are shaped onto the transition- metal silicide layers 22P, 22N while a substrate 10, to which the transition-metal silicide layers 22P, 22N are formed, is not exposed to atmospheric air after the etching.

26. 发明专利

JPH05291148A 失效
公开(公告)号：JPH05291148A
公开(公告)日：1993-11-05
申请号：JP8696192
申请日：1992-04-08
申请人： TOSHIBA CORP
发明人： ENDO TAKAYUKI , KAJI SHIGEHIKO , NAKADA RENPEI , ITO HITOSHI
IPC分类号： H01L21/205 , H01L21/68 , H01L21/683
摘要： PURPOSE:To enable the title semiconductor substrate to be heated satisfactorily by a method wherein a base substance is provided with an electrode body generating static electricity by power supply for pressing the semiconductor substrate against the base substance, a through hole and a trench leading-in a heating gas. CONSTITUTION:A quartz susceptor 6 is arranged on the bottom part of a reaction chamber 3 while a heater 10 as the base substance for mounting a semiconductor substrate 7 is provided on the susceptor 6. The heater 10 as the base substance is composed of a tungsten wire 8 as a heater for heating the semiconductor substrate 7 as well as an electrode 9 attracting the substrate 7 by electrostatic force while the periphery of the heater 10 is covered with alumina. On the other hand, a trench 12 for leading-in an inert gas via a through hole 11 is provided on the surface part of the heater 10. The through hole 11 is connected to an inert gas leading-in part. That is, the semiconductor substrate 7 is to be heated by heat conduction, radiation and convection when it is heated using the heater 10 and the inert gas.

27. 发明专利

JPH0590273A CONTROL METHOD OF SUBSTRATE TEMPERATURE 失效
公开(公告)号：JPH0590273A
公开(公告)日：1993-04-09
申请号：JP24789891
申请日：1991-09-26
申请人： TOSHIBA CORP
发明人： NAKADA RENPEI , ITO HITOSHI , KAJI SHIGEHIKO , WATANABE TORU , ENDO TAKAYUKI
IPC分类号： H01L21/31 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/324 , H01L21/68 , H01L21/683 , H05B3/00
摘要： PURPOSE:To obtain a temperature control method where a substrate is accurately controlled in temperature without requiring much reaction data by a method wherein the substrate is placed on a hot plate where a heater is buried, and a voltage impressed on a heater or a current fed to the heater is controlled so as to set the heater as high in electrical resistance as required. CONSTITUTION:In a semiconductor manufacturing device provided with a hot plate 1 where a substrate A is placed to be heated, a heater 3 is buried inside the hot plate 1. A voltage impressed onto the heater 1 or a current fed to the heater 1 is controlled to set the heater 1 as high in electrical resistance as required to control the substrate A in temperature. For instance, the hot plate 1 is composed of an electrostatic chuck electrode 4 which enables the substrate A to come into close contact with the hot plate 1 and is buried in a sintered alumina 2 and a heater wire 3 which heats the substrate A and is buried under the electrostatic chuck electrode 4.

28. 发明专利

JPH0590207A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0590207A
公开(公告)日：1993-04-09
申请号：JP25235991
申请日：1991-09-30
申请人： TOSHIBA CORP
发明人： AOYAMA TOMONORI , SUGURO KYOICHI , ITO HITOSHI
IPC分类号： H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768
摘要： PURPOSE:To obtain a semiconductor device having small contact resistance and high reliability even when it is microscopically formed by a method wherein a first conductive layer is selectively buried in a contact hole which is deeper in the amount corresponding to the difference of depth, and then a second conductive layer is buried in each contact hole in the same process. CONSTITUTION:A plurality of contact holes H1 and H2, having different depths, are formed on a semiconductor substrate 1, and a first conductive layer (titanium silicide layer) 5 is selectively buried in the deeper contact hole H1 using the condition having selectivity against the base layer exposed to the contact holes H1 and H2. Subsequently, a second conductive layer (tungsten 6 is buried in the contact holes H1 and H2 in the same process. As a result, the above-mentioned layers can flatly be buried in the contact hole of different depths, and a semiconductor device, having small wiring resistance and high reliability, can be obtained.

29. 发明专利

JPH04229626A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH04229626A
公开(公告)日：1992-08-19
申请号：JP14608691
申请日：1991-06-18
申请人： TOSHIBA CORP
发明人： ITO HITOSHI , SUGURO KYOICHI
IPC分类号： H01L21/203 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/522
摘要： PURPOSE:To provide a semiconductor device which can prevent a defect, such as an electromigration or a stress migration, caused by the diffusion of an interconnection metal and which can enhance the reliability of a metal interconnection. CONSTITUTION:At a semiconductor device, an Al interconnection 13 is formed, via an Si oxide film 12, on an Si substrate 11 where an element such as a transistor or the like is formed. At the semiconductor device, the surface (at least one out of the upper face and the side face) of the interconnection 13 is a low index-number plane orientation such as {100} or {110}.

30. 发明专利

JPH04191375A SUBSTRATE HEATING DEVICE 失效
公开(公告)号：JPH04191375A
公开(公告)日：1992-07-09
申请号：JP32088490
申请日：1990-11-27
申请人： TOSHIBA CORP
发明人： NAKADA RENPEI , ENDO TAKAYUKI , ITO HITOSHI , KAJI SHIGEHIKO , OKANO HARUO , WATANABE TORU
IPC分类号： C23C16/44 , C23C16/458 , H01L21/205 , H01L21/285 , H01L21/31
摘要： PURPOSE:To eliminate the gaps between the mating faces of the substrate, sample holder and jig, to increase the thin film forming rate and to prevent the generation of dust by closing the inside of a structure consisting of a sample holder and a jig for surrounding the holder from the periphery. CONSTITUTION:A heater 8 is fixed above a quartz susceptor 6 arranged at the bottom of a reaction chamber 3 through a spring 9. A sample holder is formed by the susceptor 6 and the heater 8. A fixing jig 10 is lowered by a lifting mechanism 12 to attach the bottom of the jig 10 firmly to the upper surface of the susceptor 6. The peripheral part of a substrate 7 is held between the upper surface of the heater 8 and the upper end of the jig 10 on the heater 8 side by the lifting force of the spring 9, and the substrate 7 is fixed. A gap is not formed since the surface of the substrate 7 is pressed by the spring 9. The infiltration of the raw gas to the surface of the heater 8, the surface of the jig 10 on the heater 8 side or the upper surface of the susceptor 6 is prevented.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式