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21. 发明专利

JP2014033076A Magnetoresistance effect element 审中-公开
标题翻译：磁阻效应元素
公开(公告)号：JP2014033076A
公开(公告)日：2014-02-20
申请号：JP2012172771
申请日：2012-08-03
申请人： Toshiba Corp , 株式会社東芝
发明人： TOKO MASARU , KISHI TATSUYA , NAKAYAMA MASAHIKO , YODA HIROAKI
IPC分类号： H01L43/08 , H01F10/16 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/10
CPC分类号： H01L43/02 , H01L27/228 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To reduce a writing current while suppressing degradation of data retention characteristics.SOLUTION: A magnetoresistance effect element comprises: a storage layer 31 which has magnetic anisotropy perpendicular to a film surface, and whose magnetization direction is variable; a reference layer 33 which has magnetic anisotropy perpendicular to the film surface, and whose magnetization direction is invariable; and a tunnel barrier layer 32 formed between the storage layer and the reference layer. The storage layer is made of CoFeB (0.4≤x
摘要翻译：要解决的问题：减少写入电流同时抑制数据保持特性的劣化。解决方案：磁阻效应元件包括：存储层31，其具有垂直于膜表面的磁各向异性，并且其磁化方向是可变的; 参考层33具有垂直于膜表面的磁各向异性，并且其磁化方向是不变的; 以及形成在存储层和参考层之间的隧道势垒层32。存储层由CoFeB（0.4≤x<0.6）制成，其膜厚为0.7nm以上且小于1.0nm。

22. 发明专利

JP2013105772A Manufacturing apparatus of magnetic memory 审中-公开
标题翻译：磁记忆的制造装置
公开(公告)号：JP2013105772A
公开(公告)日：2013-05-30
申请号：JP2011246432
申请日：2011-11-10
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKAYAMA MASAHIKO , KISHI TATSUYA , AIKAWA HISANORI , IKEGAWA SUMIO , TOKO MASARU , YODA HIROAKI
IPC分类号： H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To set a magnetization direction of a magnetic layer to a predetermined direction by a smaller magnetic field.SOLUTION: A magnetic field application apparatus, manufacturing apparatus, 30 of a magnetic memory 10 includes: magnets 32A and 32B which apply magnetic fields to a magnetic layer 15 of the magnetic memory 10 and initialize a magnetization direction of the magnetic layer 15; a magnetic field generator 33 which applies a high-frequency magnetic field, microwave magnetic field, to the magnetic layer 15 while a magnetic field, inverted magnetic field, is being applied to the magnetic layer 15; and a control circuit 34. The magnetization direction of the magnetic layer 15 can be set to a predetermined direction by the small inverted magnetic field by applying the magnetic field to the magnetic layer 15 and by, at the same time, applying the high-frequency magnetic field thereto.
摘要翻译：要解决的问题：通过较小的磁场将磁性层的磁化方向设定到预定方向。解决方案：磁存储器10的磁场施加装置，制造装置30包括：磁体32A和32B，其将磁场施加到磁存储器10的磁性层15并初始化磁性层15的磁化方向 ; 磁场发生器33，其向磁性层15施加磁场反转磁场，并向磁性层15施加高频磁场，微波磁场; 和控制电路34.通过对磁性层15施加磁场，通过小的反转磁场将磁性层15的磁化方向设定为预定的方向，并且通过同时施加高频磁场。版权所有（C）2013，JPO＆INPIT

23. 发明专利

JP2013105769A Manufacturing apparatus of magnetic memory 审中-公开
标题翻译：磁记忆的制造装置
公开(公告)号：JP2013105769A
公开(公告)日：2013-05-30
申请号：JP2011246424
申请日：2011-11-10
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKAYAMA MASAHIKO , KISHI TATSUYA , AIKAWA HISANORI , IKEGAWA SUMIO , TOKO MASARU , YODA HIROAKI
IPC分类号： H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To set magnetization directions of magnetic layers to predetermined directions by smaller magnetic fields.SOLUTION: A magnetic field application apparatus 30 of a magnetic memory 21 includes: magnets 32A and 32B which apply magnetic fields to magnetic layers of the magnetic memory 21 and initialize magnetization directions of the magnetic layers; a temperature increase mechanism 33 which increase temperature in the magnetic memory 21 while the magnetic fields are being applied to the magnetic layers; and a control circuit 34. The magnets 32A and 32B individually generate the magnetic fields in response to the magnetization directions to be set, and the magnetic field directed downward from above the magnetic memory 21 or the magnetic field directed upward from below the magnetic memory 21 is applied thereto.
摘要翻译：要解决的问题：通过较小的磁场将磁性层的磁化方向设定为预定的方向。解决方案：磁存储器21的磁场施加装置30包括：对磁存储器21的磁性层施加磁场并初始化磁性层的磁化方向的磁体32A和32B; 温度增加机构33，其在将磁场施加到磁性层的同时增加磁存储器21中的温度; 以及控制电路34.磁体32A和32B分别根据要设定的磁化方向分别产生磁场，从磁存储器21的上方向下方引导的磁场或从磁存储器21的下方向上方的磁场应用于此。版权所有（C）2013，JPO＆INPIT

24. 发明专利

JP2013069865A Magnetic memory 审中-公开
标题翻译：磁记忆
公开(公告)号：JP2013069865A
公开(公告)日：2013-04-18
申请号：JP2011207376
申请日：2011-09-22
申请人： Toshiba Corp , 株式会社東芝
发明人： IKEGAWA SUMIO , MURAYAMA AKIYUKI , NAKAYAMA MASAHIKO , IWAYAMA MASAYOSHI , AIKAWA HISANORI , KISHI TATSUYA , SHIMOMURA NAOHARU
IPC分类号： H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To inhibit malfunction of a magnetic memory.SOLUTION: A magnetic memory of an embodiment comprises: a first magnetoresistance effect element 1A in a first region; and a magnetoresistance effect element 1X in a second region. The first magnetoresistance effect element 1A includes a first storage layer 10 having a variable magnetization direction, a first reference layer 12 having an invariable magnetization direction, a non-magnetic layer 11 and a first shift adjustment layer 13. The second magnetoresistance effect element 1X includes a second storage layer 10 having a variable magnetization direction, a second reference layer 12 having an invariable magnetization direction, a second non-magnetic layer 11 and a second shift adjustment layer 13X. A film thickness t2 of the second shift adjustment layer 13X does not exceed a film thickness t1 of the first shift adjustment layer 13.
摘要翻译：要解决的问题：抑制磁存储器的故障。解决方案：实施例的磁存储器包括：第一区域中的第一磁阻效应元件1A; 和第二区域中的磁阻效应元件1X。第一磁阻效应元件1A包括具有可变磁化方向的第一存储层10，具有不变磁化方向的第一参考层12，非磁性层11和第一移位调整层13.第二磁阻效应元件1X包括具有可变磁化方向的第二存储层10，具有不变磁化方向的第二参考层12，第二非磁性层11和第二移位调整层13X。第二移动调整层13X的膜厚度t2不超过第一移位调整层13的膜厚度t1。版权所有：（C）2013，JPO＆INPIT

25. 发明专利

JP2010238769A Magnetoresistive element, and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2010238769A
公开(公告)日：2010-10-21
申请号：JP2009082741
申请日：2009-03-30
申请人： Toshiba Corp , 株式会社東芝
发明人： DAIBO TATATOMI , NAGASE TOSHIHIKO , KITAGAWA EIJI , YOSHIKAWA MASAHISA , NISHIYAMA KATSUYA , NAGAMINE MAKOTO , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , G11B5/39 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1659 , G11C11/1673 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive element which has vertical magnetic anisotropy and exhibits larger magnetoresistance effect.
SOLUTION: The magnetoresistive element 10 includes a stabilization layer 11, a nonmagnetic layer 13, a spin-polarization layer 12 provided between the stabilization layer 11 and the nonmagnetic layer 13, and having magnetic anisotropy in a direction perpendicular to a film surface, and a magnetic layer 14 provided on a side of the nonmagnetic layer 13 opposite to a side on which the spin-polarization layer 12 is provided. The stabilization layer 11 has a lattice constant smaller than that of the spin-polarization layer 12 in an in-plane direction. The spin-polarization layer 12 contains at least one or more elements selected from a group consisting of cobalt (Co) and iron (Fe), has a BCT (body-centered tetragonal) structure, and has a lattice constant ratio c/a of 1.10 to 1.35 when a direction perpendicular to the film surface is denoted by a c-axis and an in-plane direction is denoted by an a-axis.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供具有垂直磁各向异性并具有更大磁阻效应的磁阻元件。解决方案：磁阻元件10包括稳定层11，非磁性层13，设置在稳定层11和非磁性层13之间的自旋极化层12，并且在垂直于膜表面的方向上具有磁各向异性以及设置在与设置有自旋极化层12的一侧相反的非磁性层13侧的磁性层14。稳定层11的晶格常数小于自旋极化层12在面内方向的晶格常数。自旋极化层12含有选自由钴（Co）和铁（Fe）组成的组中的至少一种以上的元素，具有BCT（体心四方晶）结构，并具有晶格常数比c / a 当垂直于膜表面的方向由c轴表示并且面内方向由a轴表示时，为1.10至1.35。版权所有（C）2011，JPO＆INPIT

26. 发明专利

JP2010016408A Magnetoresistive element and magnetic memory 审中-公开
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2010016408A
公开(公告)日：2010-01-21
申请号：JP2009240559
申请日：2009-10-19
申请人： Toshiba Corp , 株式会社東芝
发明人： NAGASE TOSHIHIKO , NISHIYAMA KATSUYA , KAI TADASHI , NAKAYAMA MASAHIKO , NAGAMINE MAKOTO , AMANO MINORU , YOSHIKAWA MASAHISA , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To secure a high magnetoresistance ratio and to reduce a write current. SOLUTION: A magnetoresistive element 10 includes a fixed layer 15 having magnetic anisotropy perpendicular to a film surface and a fixed magnetization, a recording layer 17 having a stacked structure formed by alternately stacking magnetic layers and nonmagnetic layers, magnetic anisotropy perpendicular to a film surface, and a variable magnetization, and an intermediate layer 16 provided between the fixed layer 15 and the recording layer 17, and containing a nonmagnetic material. A magnetic layer 17A-1 being in contact with the intermediate layer 16 among the magnetic layers constituting the recording layer 17 contains an alloy containing cobalt (Co) and iron (Fe), and has a film thickness larger than that of a magnetic layer being not in contact with the intermediate layer 16. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了确保高磁阻比并且减小写入电流。解决方案：磁阻元件10包括具有垂直于膜表面的磁各向异性和固定磁化的固定层15，具有通过交替堆叠磁性层和非磁性层而形成的层叠结构的记录层17，垂直于膜的磁各向异性膜表面和可变磁化，以及设置在固定层15和记录层17之间并包含非磁性材料的中间层16。在构成记录层17的磁性层中与中间层16接触的磁性层17A-1含有含钴（Co）和铁（Fe）的合金，其膜厚比磁性层的厚度大不与中间层16接触。版权所有（C）2010，JPO＆INPIT

27. 发明专利

JP2009239121A Magnetoresistive element and magnetic random access memory 审中-公开
标题翻译：磁性元件和磁性随机存取存储器
公开(公告)号：JP2009239121A
公开(公告)日：2009-10-15
申请号：JP2008084939
申请日：2008-03-27
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIKAWA MASAHISA , KITAGAWA EIJI , DAIBO TATATOMI , NAGAMINE MAKOTO , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , G11B5/39 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/10
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3909 , G11C11/161 , G11C11/1675 , H01F10/123 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01F41/307 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To permit spin implantation flux to be reversal, al at high TMR (tunnel magneto-resistance) ratio and low current. SOLUTION: Magneto-resistance effect element is provided with the stack structure of base layer 11, a first magnetic layer 12, a tunnel barrier layer 13 and a second magnetic layer 14. The remanent magnetization of the first and second magnetic layers 12, 14 faces a direction which is l to the film surfaces of them, and the magnetization direction is not changed in one of the first and second magnetic layers 12, 14, while the magnetization direction is variable in the other of them. The first magnetic layer 12 is a ferromagnetic metal, consisting of not less than one element selected from the first group of Co, Fe and Ni, as well as, not less than one element selected from a second group of Cu, Ag, Au, Pd, Pt, Ru, Rh, Ir and Os while the base layer 11 is a metal containing one element selected from among the third group of Al, Ni, Co, Fe, Mn, Cr and V or a metal containing more than two kinds of elements selected from among a third group. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了允许自旋注入通量反转，在高TMR（隧道磁阻）比和低电流下。解决方案：磁阻效应元件设置有基极层11，第一磁性层12，隧道势垒层13和第二磁性层14的堆叠结构。第一和第二磁性层12的剩余磁化强度 14表示与它们的膜表面1相对的方向，并且在第一和第二磁性层12,14中的一个中磁化方向不改变，而另一个磁化方向是可变的。第一磁性层12是由不少于一种选自Co，Fe和Ni的元素组成的铁磁性金属，以及不少于一种选自Cu，Ag，Au， Pd，Pt，Ru，Rh，Ir和Os，而基层11是含有选自第三组Al，Ni，Co，Fe，Mn，Cr和V中的一种元素的金属或含有两种以上的金属的选自第三组的元素。版权所有（C）2010，JPO＆INPIT

28. 发明专利

JP2009231753A Magnetoresistance effect element and magnetic random access memory 有权
标题翻译：磁阻效应元件和磁性随机存取存储器
公开(公告)号：JP2009231753A
公开(公告)日：2009-10-08
申请号：JP2008078420
申请日：2008-03-25
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKAYAMA MASAHIKO , KAI TADASHI , IKEGAWA SUMIO , YODA HIROAKI , KISHI TATSUYA
IPC分类号： H01L43/08 , H01L21/8246 , H01L27/105 , H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1675 , H01L27/226
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element and magnetic random access memory that is capable of minimizing write current and performing rapid writing, and has a larger capacity.
SOLUTION: The magnetoresistance effect element includes: a first ferromagnetic layer 2 that is magnetized in a direction substantially perpendicular to a film surface and is stable; a second ferromagnetic layer 6 that is magnetized in a direction substantially perpendicular to the film surface and is variable; a first nonmagnetic layer 4 provided between the first ferromagnetic layer and the second ferromagnetic layer; a third ferromagnetic layer 10 that is provided on the opposite side of the first ferromagnetic layer across the second ferromagnetic layer, is magnetized in a direction substantially parallel to the film surface, and is variable; and a second nonmagnetic layer 8 provided between the second ferromagnetic layer and the third ferromagnetic layer. Passing current in a direction substantially perpendicular to the film surface between the first ferromagnetic layer and the third ferromagnetic layer causes a spin-polarized electron to act to the second ferromagnetic layer, act to the third ferromagnetic layer through the second ferromagnetic layer and the second nonmagnetic layer to thereby induct precession to the magnetization of the third ferromagnetic layer, and causes micro wave magnetic field of frequency corresponding to the precession to be applied to the second ferromagnetic layer.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供能够最小化写入电流并执行快速写入并且具有较大容量的磁阻效应元件和磁性随机存取存储器。解决方案：磁阻效应元件包括：第一铁磁层2，其在基本上垂直于膜表面的方向上被磁化并且是稳定的; 在基本上垂直于膜表面的方向上被磁化的第二铁磁层6是可变的; 设置在第一铁磁层和第二铁磁层之间的第一非磁性层4; 设置在第一铁磁层的与第二铁磁层相反的一侧上的第三铁磁层10在基本上平行于膜表面的方向上被磁化，并且是可变的; 以及设置在第二铁磁层和第三铁磁层之间的第二非磁性层8。在基本垂直于第一铁磁层和第三铁磁层之间的膜表面的方向上传导电流导致自旋极化电子作用于第二铁磁层，通过第二铁磁层和第二非磁性层作用于第三铁磁层从而引起对第三铁磁层的磁化的进动，并且使对应于进动的频率的微波磁场施加到第二铁磁层。版权所有（C）2010，JPO＆INPIT

29. 发明专利

JP2009212156A Magnetoresistive element and magnetic memory using the same 审中-公开
标题翻译：磁性元件和使用它的磁记忆
公开(公告)号：JP2009212156A
公开(公告)日：2009-09-17
申请号：JP2008051176
申请日：2008-02-29
申请人： Toshiba Corp , 株式会社東芝
发明人： DAIBO TATATOMI , YOSHIKAWA MASAHISA , NAGASE TOSHIHIKO , KITAGAWA EIJI , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , G11B5/39 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive element that develops giant magneto-resistance.
SOLUTION: The magnetoresistive element includes a first magnetic film 11, a tunnel barrier film 14 on the first magnetic film 11, and a second magnetic film 16 on the tunnel barrier film 14. The first magnetic film 11 contains at least one element selected out of C, P, As, Sn, Sb, Te, and Pb. The tunnel barrier film 14 has, on the film surface of the first magnetic film 11 on an interface between the first magnetic film 11 and tunnel barrier film 14, an NaCl type crystal structure (001) oriented in its normal direction.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供开发巨磁阻的磁阻元件。解决方案：磁阻元件包括第一磁性膜11，第一磁性膜11上的隧道阻挡膜14和隧道阻挡膜14上的第二磁性膜16.第一磁性膜11包含至少一个元件选自C，P，As，Sn，Sb，Te和Pb。隧道阻挡膜14在第一磁性膜11和隧道阻挡膜14之间的界面上的第一磁性膜11的膜表面上具有沿其法线方向取向的NaCl型晶体结构（001）。版权所有（C）2009，JPO＆INPIT

30. 发明专利

JP2009081315A Magnetoresistive element, and magnetic memory 审中-公开
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2009081315A
公开(公告)日：2009-04-16
申请号：JP2007250287
申请日：2007-09-26
申请人： Toshiba Corp , 株式会社東芝
发明人： NAGASE TOSHIHIKO , NISHIYAMA KATSUYA , KAI TADASHI , NAKAYAMA MASAHIKO , NAGAMINE MAKOTO , AMANO MINORU , YOSHIKAWA MASAHISA , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , G11C11/15 , H01F10/16 , H01L21/8246 , H01L27/105
CPC分类号： H01L43/08 , G11C11/161 , H01L27/228 , Y10S977/935
摘要： PROBLEM TO BE SOLVED: To secure a high magnetoresistance ratio and to reduce a write current.
SOLUTION: A magnetoresistive element 10 includes a fixed layer 15 having magnetic anisotropy perpendicular to a film surface and a fixed magnetization, a recording layer 17 having a stacked structure formed by alternately stacking magnetic layers and nonmagnetic layers, magnetic anisotropy perpendicular to a film surface, and a variable magnetization, and an intermediate layer 16 provided between the fixed layer 15 and the recording layer 17, and containing a nonmagnetic material. A magnetic layer 17A-1 being in contact with the intermediate layer 16 among the magnetic layers constituting the recording layer 17 contains an alloy containing cobalt (Co) and iron (Fe), and has a film thickness larger than that of a magnetic layer being not in contact with the intermediate layer 16.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了确保高磁阻比并且减小写入电流。解决方案：磁阻元件10包括具有垂直于膜表面的磁各向异性和固定磁化的固定层15，具有通过交替堆叠磁性层和非磁性层而形成的层叠结构的记录层17，垂直于膜的磁各向异性膜表面和可变磁化，以及设置在固定层15和记录层17之间并包含非磁性材料的中间层16。在构成记录层17的磁性层中与中间层16接触的磁性层17A-1含有含钴（Co）和铁（Fe）的合金，其膜厚比磁性层的厚度大不与中间层16接触。版权所有（C）2009，JPO＆INPIT

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