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21. 发明专利

JPH09298436A MANUFACTURE OF SURFACE ACOUSTIC WAVE DEVICE 失效
公开(公告)号：JPH09298436A
公开(公告)日：1997-11-18
申请号：JP10906996
申请日：1996-04-30
申请人： TOSHIBA CORP
发明人： ICHIKAWA SATOSHI , ETSUNO MASAYOSHI
IPC分类号： H01L41/09 , H01L41/22 , H03H3/08
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a surface acoustic wave device in which a surface acoustic wave element and an outer package are adhered with sufficient strength while preventing electrostatic destruction of interdigital electrodes. SOLUTION: An outer package 101 and a surface acoustic wave element 104 having interdigital electrodes 103 formed on a piezoelectric substrate 102 which are opposed to each other via an adhesives 106 are introduced in a chamber having a plasma generating means to generate a plasma state in the chamber, and the adhesives 106 is cured by an ultraviolet ray or heat from the plasma while preventing electrostatic destruction of the interdigital electrodes 103 due to the plasma to adhere the outer package 101 and the surface acoustic wave element 104.

22. 发明专利

JP2012018074A Radiation detector and manufacturing method thereof 审中-公开
标题翻译：辐射探测器及其制造方法
公开(公告)号：JP2012018074A
公开(公告)日：2012-01-26
申请号：JP2010155467
申请日：2010-07-08
申请人： Toshiba Corp , Toshiba Electron Tubes & Devices Co Ltd , 東芝電子管デバイス株式会社 , 株式会社東芝
发明人： HORIUCHI HIROSHI , SUZUKI SHINJI , ICHIKAWA SATOSHI , TAMAGAWA FUMIYASU , MIYAZAKI MASARU , AIDA HIROYUKI
IPC分类号： G01T1/20 , H01L27/14 , H01L31/09 , H04N5/32
摘要： PROBLEM TO BE SOLVED: To provide an X-ray detector suppressing interface peeling of a protection layer, and ensuring various characteristics and reliability.SOLUTION: A solid state imaging element 12 is provided, which has a light receiving portion 14 in which a plurality of photoelectric conversion elements 13 are arranged on a surface side, and electrode pads 16 electrically connected to the photoelectric conversion elements 13. A scintillator layer 26 is provided, which opposes to the light receiving portion 14 of the solid state imaging device 12, and converts an X-ray 24 incident from the outside into light. An external connection electrode pad 18 and an electrode terminal 19 which is electrically connected to the external connection electrode pad 18 are provided, and a base 17 fixing the solid state imaging element 12 is provided. Wiring 20 electrically connecting the electrode pads 16 and 18 is provided. A middle layer 22 is formed of an organosilicon compound on the solid state imaging element 12, the electrode pad 16, the external connection electrode pad 18, and the wiring 20. A protection layer 28 is formed of an organic material on the middle layer 22.
摘要翻译：要解决的问题：提供一种抑制保护层的界面剥离的X射线检测器，并且确保各种特性和可靠性。解决方案：提供一种固态成像元件12，其具有其中多个光电转换元件13布置在表面侧的光接收部分14和电连接到光电转换元件13的电极焊盘16。提供闪烁体层26，其与固态成像装置12的光接收部分14相对，并将从外部入射的X射线24转换成光。设置外部连接电极焊盘18和与外部连接电极焊盘18电连接的电极端子19，并且设置固定固态成像元件12的基座17。提供电连接电极焊盘16和18的接线20。中间层22由固态成像元件12，电极焊盘16，外部连接电极焊盘18和布线20上的有机硅化合物形成。保护层28由中间层22上的有机材料形成（C）2012年，JPO＆INPIT

23. 发明专利

JP2007173544A X ray detector and method of fabricating same 审中-公开
标题翻译： X射线探测器及其制造方法
公开(公告)号：JP2007173544A
公开(公告)日：2007-07-05
申请号：JP2005369493
申请日：2005-12-22
申请人： Toshiba Corp , Toshiba Electron Tubes & Devices Co Ltd , 東芝電子管デバイス株式会社 , 株式会社東芝
发明人： HORIUCHI HIROSHI , ICHIKAWA SATOSHI , AIDA HIROYUKI
IPC分类号： H01L27/14 , G01T1/20 , G01T1/24
摘要： PROBLEM TO BE SOLVED: To provide an X ray detector 1 in which internal stress of an X ray photoconductive layer 4 formed integrally on an active matrix substrate 3 can be reduced.
SOLUTION: A crystal growth acceleration layer 31, which is effective for enhancing orientation of crystal nucleus, is formed in the region A1 of a pixel electrode 9 on an active matrix substrate 3, and a crystal growth suppression layer 32, which is effective for impeding orientation of crystal nucleus, is formed in the region A2 other than the pixel electrode 9. An X ray photoconductive layer 4 is formed by vapor deposition on the crystal growth acceleration layer 31 and the crystal growth suppression layer 32. The X ray photoconductive layer 4 has an X ray photoconductive layers 4a and 4b exhibiting different crystal orientation in the region A1 of the pixel electrode 9 and the region A2 other than the pixel electrode 9 integrally. Internal stress of the X ray photoconductive layer 4 is reduced by differentiating crystal orientation of the X ray photoconductive layer 4 in the region A1 of the pixel electrode 9 and the region A2 other than the pixel electrode 9, thereby differentiating filling density.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以减少在有源矩阵基板3上一体形成的X射线光电导层4的内应力的X射线检测器1。解决方案：在有源矩阵基板3上的像素电极9的区域A1和晶体生长抑制层32中形成有效地提高晶核取向的晶体生长加速层31 在像素电极9以外的区域A2中形成有效阻止晶核取向的效果。通过气相沉积在晶体生长加速层31和晶体生长抑制层32上形成X射线光电导层4.X射线光电导层4具有在像素电极9的区域A1和像素电极9以外的区域A2一体地表现出不同晶体取向的X射线光电导层4a和4b。通过在像素电极9的区域A1和像素电极9之外的区域A2中区分X射线光电导层4的晶体取向来降低X射线光电导层4的内部应力，从而区分填充密度。版权所有（C）2007，JPO＆INPIT

24. 发明专利

JP2000106519A SURFACE ACOUSTIC WAVE ELEMENT 失效
公开(公告)号：JP2000106519A
公开(公告)日：2000-04-11
申请号：JP27407198
申请日：1998-09-28
申请人： TOSHIBA CORP
发明人： ICHIKAWA SATOSHI
IPC分类号： H03H9/25
摘要： PROBLEM TO BE SOLVED: To provide the surface acoustic wave element that has an excellent frequency characteristic by eliminating a leakage wave from an IDT and is much more miniaturized. SOLUTION: An input IDT 6a, an output IDT 6b and a bonding pad 7 are respectively placed on a piezoelectric substrate 5 of the surface acoustic wave element. One or two or over of recessed parts 10 (recessed holes 8 or recessed grooves 9) whose depth is shallower than a wavelength λ of a surface acoustic wave are placed on a region between the IDT 6 and an end face of the major side in a propagation direction of the surface acoustic wave stimulated by the IDT 6. In the case of the recessed grooves 9, it is desired that the inner circumferential face of the grooves 9 toward the IDT 6 is placed at an tilt angle other than the right angle in a progress direction of the surface acoustic wave. The effect of improving the frequency characteristic is furthermore enhanced by selecting the shape of the recessed part and sizes of the element such as a width of the bottom face so that reflected waves by the recessed parts 10 are interfered and cancelled together.

25. 发明专利

JPH10145174A SURFACE ACOUSTIC WAVE DEVICE 失效
公开(公告)号：JPH10145174A
公开(公告)日：1998-05-29
申请号：JP30198496
申请日：1996-11-13
申请人： TOSHIBA CORP
发明人： ICHIKAWA SATOSHI
IPC分类号： H03H9/145
摘要： PROBLEM TO BE SOLVED: To provide the surface acoustic wave device with high productivity and reliability in which electrostatic destruction is hardly caused. SOLUTION: A width of electrodes of IDTs(interdigital transducers) 41, 42, 43, 44, 45 and a width of strip electrodes for configuring the grating of reflectors 46, 47 are selected to be 1/4 of a wavelength of a surface acoustic wave stimulated by the IDTs, but a width between the IDTs or a width of the electrode where the IDT and the reflector are adjacent to each other is formed wider than that of the other parts. That is, widths of electrodes 46a, 41a, electrodes 41b, 42a, electrodes 42b, 43a, electrodes 43b, 44a, electrodes 44b, 45a, electrodes 45b, 47a are selected to be of size 5/16λ, that is, thicker by λ/16, and the strength of electric field concentrated in the electrodes is relaxed.

26. 发明专利

JPH09284090A SURFACE ACOUSTIC WAVE DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH09284090A
公开(公告)日：1997-10-31
申请号：JP9224296
申请日：1996-04-15
申请人： TOSHIBA HOKUTO ELECT CORP , TOSHIBA CORP
发明人： MURAKAWA NORIO , TAKAGI TOSHIYUKI , SATO YOSHINORI , MAKI NAOAKI , ICHIKAWA SATOSHI , ETSUNO MASAYOSHI
IPC分类号： H03H3/08 , H03H9/25
摘要： PROBLEM TO BE SOLVED: To provide the manufacture of the surface acoustic wave device in which a surface acoustic wave element and an envelope are bonded with a sufficient strength while preventing electrostatic breakdown of an interdigital electrode caused by pyroelectricity of a piezoelectric substrate. SOLUTION: The region of an envelope 101 on which a surface acoustic wave element 104 is to be mounted and the surface of the surface acoustic wave element 104 opposite to the surface on which an interdigital electrode 103 is formed are arranged opposite to each other via an adhesive 106 with photocuring performance. While maintaining the isolation state of the interdigital electrode 103, light is emitted on the adhesive 106 to cure partially the adhesive. Then the interdigital electrode 106 and the envelope 101 are connected electrically and the adhesive 106 is heated and cured.

27. 发明专利

JPH0865097A SURFACE ACOUSTIC WAVE FILTER DEVICE 失效
公开(公告)号：JPH0865097A
公开(公告)日：1996-03-08
申请号：JP19545494
申请日：1994-08-19
申请人： TOSHIBA CORP
发明人： ICHIKAWA SATOSHI , KURODA YASUSHI , ETSUNO MASAYOSHI
IPC分类号： H03H9/145 , H03H9/64
摘要： PURPOSE: To reconcile sufficient band widths and out-of-band attenuation amount by adding a notch filter composed of at least one or more resonators to at least one of the input/output of an interdigital transducer (IDT) serially and in parallel. CONSTITUTION: IDT11 to 13 having reflectors Gr 7 and Gr 8 on the both sides are arranged in a horizontal line on a substrate. The electric signals inputted from a pad 1 pass a serial/parallel resonator, the signals are transmitted to the IDT 11 and the IDT 13, and the surface acoustic waves excited by these IDT are received in the IDT 12 at the center. The pad 1 is serially connected with a resonator (I) and a resonator (II) and the pad 1 is further connected with a resonator (III) in parallel. In this stage, the resonator (I) is composed of reflectors Gr 9 and Gr 10 and the IDT 14 held by the reflectors, the resonator (II) is composed of reflectors Gr 9a and Gr 10a and the IDT 15 held by the reflectors, and the resonator (III) is composed of reflectors Gr 9b and Gr 10 and the IDT 16 held by the reflectors.

28. 发明专利

JPH0865094A SURFACE ACOUSTIC WAVE FILTER DEVICE 失效
公开(公告)号：JPH0865094A
公开(公告)日：1996-03-08
申请号：JP20040594
申请日：1994-08-25
申请人： TOSHIBA CORP
发明人： KURODA YASUSHI , ICHIKAWA SATOSHI , ETSUNO MASAYOSHI
IPC分类号： H03H9/64
摘要： PURPOSE: To give a high out-of-band attenuation by forming an interdigital transducer (IDT) transducing the surface acoustic wave which is not connected with the IDT by electrodes and is excited by the IDT into an electric signal. CONSTITUTION: In a symmetrical grid circuit part, a resonator 20 a is arranged between an input terminal 21a and an output terminal 22a, and a resonator 20b which is the same as this resonator 20a is arranged between an input terminal 21b and an output terminal 22b. Each of the resonators 20a to 20d is formed by the surface acoustic wave resonator having a reflector at the both ends of an IDT. In this case, grid circuit output terminals 22a and 22b are connected with the IDT 11 and IDT 13 of a resonator filter part 24 composed of three IDT. By these IDT, the surface acoustic wave is excited and the wave is again transformed into an electric signal in an IDT 12. Reflectors 7 and 8 are placed on the external side of the IDT 11 and the IDT 13. The reflectors reflect surface waves to be propagated in the outside direction in the IDT 11 and the IDT 13 and prevent the loss degradation within a passing band.

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