会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 24. 发明专利
    • OPTICAL RECORDING MEDIUM
    • JPH01130343A
    • 1989-05-23
    • JP28741087
    • 1987-11-16
    • NIPPON TELEGRAPH & TELEPHONE
    • CHIBA REIICHIFUNAKOSHI NORIHIROFUJIMORI SUSUMUSUGIYAMA YASUYUKI
    • B41M5/26G11B7/24
    • PURPOSE:To shorten the time for erasing by laser light by providing a heat inertia layer which attains a crystal state and has the m.p. near the m.p. of an optical recording layer in proximity to the optical recording layer. CONSTITUTION:The heat inertia layer 4 which attains the crystal state and has the m.p. near the m.p. of the optical recording layer 2 is provided in proximity to the optical recording layer 2. Namely, the non-irradiated part of the heat inertia layer 4 melts when said layer is irradiated with the erasing laser beam. Latent heat is absorbed and released in the heat inertia layer 4 according to such melting. The temp. rise and fall of the waste heat layer 4 do not take place during this time and, therefore, the temp. rise and fall of the optical recording layer 2 change more gently. The temp. gradient of the optical recording layer 2 is gentle near the m.p. temp. of the heat inertia layer 4 when the heat inertia layer 4 is provided. The area of the temp. convenient for crystallization is thereby increased even if the beam of the same profile is used. The crystallization of amorphous recording marks is thus facilitated.
    • 26. 发明专利
    • OPTICAL RECORDING MEDIUM AND ITS PRODUCTION
    • JPS6417229A
    • 1989-01-20
    • JP17128487
    • 1987-07-10
    • NIPPON TELEGRAPH & TELEPHONE
    • FUJIMORI SUSUMUFUNAKOSHI NORIHIROCHIBA REIICHISUGIYAMA YASUYUKI
    • G11B7/243B41M5/26G11B7/24
    • PURPOSE:To stabilize a recording state so that a recording medium can be stably operated in spite of repeated recording and erasing by forming the recording medium, the state of which changes with absorption of light or a temp. rise by the absorption of light, in such a manner that at least one of the changing states thereof has an approximately uniform crystal orientation. CONSTITUTION:A recording layer 2 which is subjected to a C-axis orientation by using respective elements of multielement alloys as a composite target is formed in, for example, a sputtering method or electron beam heating method. An amorphous spot 4 is formed when a laser beam is projected to this layer. Crystallization progresses as shown in the lower figure if the laser light is further projected to this part. The process in which the crystallization begins from the crystal part in the periphery and is completed by progressing toward the inner side like arrows A is most liable to arise at this time. The same crystal orientation as in the periphery takes place in the recording layer 2 in this case and, therefore, the orientation is again unified in the C-axis direction. The recording medium which excels in the long-term stability of the recording state and the high-speed erasability as well as the stability of the signal levels in the recording state and erasing state in spite of the repeated recording and erasing is thereby obtd.
    • 27. 发明专利
    • METHOD AND DEVICE FOR SPUTTERING
    • JPS63270463A
    • 1988-11-08
    • JP10376787
    • 1987-04-27
    • NIPPON TELEGRAPH & TELEPHONE
    • FUJIMORI SUSUMUFUNAKOSHI NORIHIROCHIBA REIICHI
    • C23C14/38C23C14/40G11B7/26G11B11/10G11B11/105H01B3/00H01B13/00
    • PURPOSE:To improve the quality of a film deposited on the surface of a substrate and to increase the deposition rate by radiating plasma from a target electrode to a substrate electrode at the time of forming the deposited film of the target material on the substrate by the title sputtering device. CONSTITUTION:The N pole of a magnet 3 is arranged on the electrode 1 side on the target side of the sputtering device, and the S pole of the magnet 3 is arranged on the substrate electrode 2 side. consequently, the S pole of the magnet 3 is arranged on the target 5 side, and the N pole of the magnet 3 is arranged on the substrate 6 side. A line of magnetic force 4 is generated from the target 5 toward the substrate 6, a plasma current is generated along the line, the particles sputtered from the target 5 are entrained by the plasma current, and a deposited film is formed on the substrate 6. When the N poles of the magnets are arranged at the central part and outer periphery of the electrode 1 on the target 5 side or conversely the S poles are arranged, the lines 4 of magnetic force repel each other, hence the lines 4 of the magnetic force are generated from the target 5 toward the substrate 6, the particles sputtered from the target 5 are deposited on the substrate 6, and the good- quality film of the target material is rapidly formed.