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21. 发明专利

JPH03238908A HIGH EFFICIENCY SEMICONDUCTOR AMPLIFIER 失效
公开(公告)号：JPH03238908A
公开(公告)日：1991-10-24
申请号：JP3465190
申请日：1990-02-15
申请人： MITSUBISHI ELECTRIC CORP
发明人： TOYOSHIMA HAJIME , IKEDA YUKIO , TAKAGI SUNAO
IPC分类号： H03F1/02 , H03F3/60 , H03F3/68
摘要： PURPOSE:To decrease number of components and to make the amplifier small in size by providing a filter circuit whose impedance is an open impedance with respect to a double frequency wave and constituting a double frequency wave injection path with an output matching circuit of each amplifier element, a double frequency wave phase adjustment line and a power synthesis means. CONSTITUTION:A fundamental wave band pass filter 7 is provided to an output of a power synthesizer 4 and a double frequency wave injection path injecting a double frequency wave component of an output of one FET 5 or 6 to other FET 6 or 5 consists of output matching circuits 11a, 11b, double frequency wave phase adjustment lines 12a, 12b and the power synthesizer 4. Thus, two fundamental band pass filters and two double frequency wave band pass filters having been required for a conventional amplifier are not required, and number of components is reduced and the size is made small.

22. 发明专利

JPH03198502A POWER DISTRIBUTER AND POWER SYNTHESIZER 失效
公开(公告)号：JPH03198502A
公开(公告)日：1991-08-29
申请号：JP34105389
申请日：1989-12-27
申请人： MITSUBISHI ELECTRIC CORP
发明人： SUEMATSU KENJI , TAKAGI SUNAO , URASAKI SHUJI , ISODA YOJI , IKEDA YUKIO , TOYOSHIMA HAJIME
IPC分类号： H03H11/36 , H01P5/12
摘要： PURPOSE:To attain miniaturization even when frequency is low by distributing power with split drain electrodes when the power is outputted from a FET in a distributer and a synthesizer of high frequency power and synthesizing the power by the split gate electrodes when the power is inputted to the FET. CONSTITUTION:The power inputted to a terminal 1 in a power distributer is inputted to a gate electrode 11a of a FET 10 via a gate bias circuit of the FET 10 and a matching circuit 25a and amplified by the FET 10. The amplified power is distributed into drain electrodes 12a, 12b of the FET 10 and outputted respectively to terminals 2, 3 via a bias circuit and matching circuits 26a, 26b. The power inputted to the terminals 2, 3 in the power synthesizer is inputted to gate electrodes 11a, 11b via the gate bias circuit and matching circuits 25a, 25b and amplified by the FET 10. The amplified power is synthesized by the FET 10 and outputted to the drain electrode 12a and outputted to the terminal 1 via the drain bias circuit and the matching circuit 26a.

23. 发明专利

JPS6292504A TRAVELING WAVE TYPE AMPLIFIER 失效
公开(公告)号：JPS6292504A
公开(公告)日：1987-04-28
申请号：JP23266385
申请日：1985-10-17
申请人： MITSUBISHI ELECTRIC CORP
发明人： KIYONO KIYOHARU , TAKAGI SUNAO , IKEDA YUKIO
IPC分类号： H03F3/193 , H03F3/60
摘要： PURPOSE:To apply highly efficient power combination by arranging a gate and a drain of one of unit FETs arranged in a line in opposite polarity as those of other FETs so as to arrange all the unit FETs at one location thereby obtaining the unit FETs whose characteristic is well arranged. CONSTITUTION:The unit FETs 1-4 are arranged in parallel sequentially in a line and a gate 5, a drain 6 of the FETs 3, 4 are arranged in opposite direction respectively to a gate 5 and a drain 6 of the FETs 1, 2. Thus, all the FETs 1-4 are arranged at a location so as to facilitate the units FETs with arranged characteristic. Then in applying power combination through the parallel connection of two traveling wave amplifiers, since the traveling wave type amplifiers with well arranged characteristic is obtained, highly efficient power combination is attained.

24. 发明专利

JPS6292501A POWER DISTRIBUTOR 失效
公开(公告)号：JPS6292501A
公开(公告)日：1987-04-28
申请号：JP23266485
申请日：1985-10-17
申请人： MITSUBISHI ELECTRIC CORP
发明人： IKEDA YUKIO , TAKAGI SUNAO , KIYONO KIYOHARU , TAKEDA FUMIO
IPC分类号： H01P5/19 , H01P5/12
摘要： PURPOSE:To obtain an excellent isolation characteristic by providing a metallic wire and a capacitor of thin film multi-layer structure in series resonance in parallel with a connection line so as to short-circuit both ends of the connection line at the center frequency. CONSTITUTION:In selecting an inductance 38 of the metallic wire and a capacitance 39 of the thin film multi-layered capacitor so as to be in series resonance at the center frequency, nodes 40, 41 are short-circuited at the center frequency and the length among terminals 21-24 is a 1/2 propagation wavelength lambda8. Then a reflected wave made incident from the terminal 21 appears at the terminals 21-24 in opposite phase, is consumed in resistors among terminals and the isolation characteristic among the terminals is the same as that of the Wilkinson type power distributor and becomes excellent.

25. 发明专利

JPS59105341A Interdigital capacitor 失效
标题翻译： INTERDIGITAL电容器
公开(公告)号：JPS59105341A
公开(公告)日：1984-06-18
申请号：JP21580382
申请日：1982-12-09
申请人： Mitsubishi Electric Corp
发明人： IKEDA YUKIO , TAKAGI SUNAO
IPC分类号： H01L27/04 , H01L21/822 , H01L23/12 , H01L23/64 , H01L29/93 , H01P5/04
CPC分类号： H01L23/642 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： PURPOSE:To vary characteristic impedance and a wavelength shortening rate in the case when the capacitor is regarded as a distribution fixed-number line by forming an epitaxial layer to the lower section of opposite fingers, joining a Schottky with a boundary surface between one finger and the epitaxial layer and forming an ohmic junction to the other finger. CONSTITUTION:The epitaxial layer 13 formed to the lower section of the opposite fingers 4, 5 of the interdigital capacitor used for a microwave integrated circuit, and the Schottky junction surfaces are formed to the boundary surfaces 15 among one fingers 4 and the epitaxial layer 13 and the ohmic junctions to boundary surfaces 16 among the other fingers 5 and the epitaxial layer 13. Consequently, the size of an extent of a depletion layer 18 changes by adjusting a bias power supply 17, and the magnitude C3 of an equivalent variable capacitance 19 depends upon the size of the extent of the depletion layer 18 because the equivalent variable capacitance 19 consists of the coupling capacitance of the fingers 4 and the fingers 5 and depletion capacitance depending upon the extent of the depletion layer. Accordingly, characteristic impedance and the wavelength shortening rate in the case when the interdigital capacitor is regarded as the distribution fixed-number line can be changed by adjusting the bias power supply 17 and altering C3.
摘要翻译：目的：为了改变特征阻抗和波长缩短率，在通过在相对指的下部形成外延层将电容器视为分布固定数线的情况下，将肖特基与一个手指和外延层并形成与其他手指的欧姆结。构成：形成在用于微波集成电路的叉指电容器的相对指4,5的下部的外延层13和肖特基结表面形成在一个指状物4和外延层13之间的边界表面15上以及与其他指5和外延层13之间的边界面16的欧姆结。因此，耗尽层18的程度的大小通过调整偏置电源17而变化，并且等效可变电容19的幅度C3 取决于耗尽层18的程度的大小，因为等效可变电容19由指状物4和指状物5的耦合电容和耗尽电容构成，这取决于耗尽层的程度。因此，可以通过调整偏置电源17并改变C3来改变在指示电容器被认为是分配固定数线的情况下的特性阻抗和波长缩短率。

26. 发明专利

JP2002124840A DOHERTY AMPLIFIER 失效
公开(公告)号：JP2002124840A
公开(公告)日：2002-04-26
申请号：JP2000314271
申请日：2000-10-13
申请人： MITSUBISHI ELECTRIC CORP
发明人： NAKAYAMA MASATOSHI , HORIGUCHI KENICHI , IKEDA YUKIO , SAKAI YUJI
IPC分类号： H03F3/60 , H03F1/02 , H03F1/07 , H03F1/30 , H03F1/32 , H03F1/34 , H03F1/42 , H03F3/21 , H03F3/24 , H03F3/68 , H03G3/30
摘要： PROBLEM TO BE SOLVED: To solve the problem that, in a conventional Doherty amplifier, as the bias conditions of two amplifiers are different, the output power from each amplifier at the output terminal is not effectively put together, and therefore the output power and efficiency are reduced. SOLUTION: A Doherty amplifier comprises: a carrier amplifier 3 which is biased in A class, AB class or B class; a 1/4 wavelength line 5; a peak amplifier 4 which is biased in B class or C class; a variable attenuator 7 for changing the gain; and a variable phase shifter 8 for changing the through phase amount.

27. 发明专利

JP2001345606A MMIC AMPLIFIER 失效
公开(公告)号：JP2001345606A
公开(公告)日：2001-12-14
申请号：JP2000169500
申请日：2000-06-06
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMAUCHI KAZUHISA , IKEDA YUKIO , NAKAAZE HIROAKI
IPC分类号： H01P5/02 , H01P5/08 , H03F3/60
摘要： PROBLEM TO BE SOLVED: To solve a problem raised in a conventional MMIC that the conductor widths of lines realizing the same impedance become broader and peripheral circuits widely occupy a semiconductor substrate, because the dielectric substrate related to the peripheral circuits excluding an element section is formed thicker. SOLUTION: An MMIC amplifier is provided with the dielectric substrate 6, an amplifier 2 formed on the substrate 6, a matching circuit composed of an input matching circuit 4 and output matching circuit 5, and formed on the substrate 6. The MMIC amplifier is also provided with a recessed section 7 which is formed by removing the part of the substrate 6 under the whole or partial area of the matching circuit, and a grounding conductor 8 formed on the back side of the substrate 6.

28. 发明专利

JP2001156242A MULTI-STAGE AMPLIFIER DEVICE 失效
公开(公告)号：JP2001156242A
公开(公告)日：2001-06-08
申请号：JP33444599
申请日：1999-11-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： SHINJO SHINTARO , MORI KAZUTOMI , NAKAYAMA MASATOSHI , IKEDA YUKIO
IPC分类号： H01L25/00 , H03F3/60
摘要： PROBLEM TO BE SOLVED: To eliminate a unstable operation or the like as the result of a feedback between a plurality of amplifiers 10 and 10 through a ground plane in a conventional multi-stage amplifier device. SOLUTION: The ground plane such as, for example, chip mounted patterns 19 and 19 are separated at each of the amplifiers 10, 10.

29. 发明专利

JP2000349565A POWER AMPLIFIER 失效
公开(公告)号：JP2000349565A
公开(公告)日：2000-12-15
申请号：JP15550899
申请日：1999-06-02
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMAUCHI KAZUHISA , IKEDA YUKIO , NAKAYAMA MASATOSHI , MORI KAZUTOMI
IPC分类号： H03F3/68 , H03F1/32
摘要： PROBLEM TO BE SOLVED: To reduce a loss and distortion power without a linearizer by making at least one unit amplifier in plural unit amplifiers and the other unit amplifiers have positive/negative gain respectively with respect to the power variation of an input signal and respectively amplifying distributed input so as to put power together. SOLUTION: A power distribution device 32 distributes the power of the input signal of an input terminal and an amplifying means constituted of unit amplifiers 34, 35 amplifies the signal. At this time, the unit amplifier 34 has the gain characteristics of 0.05 dB increase per power increase of 1 dB of the input signal and the amplifer 35 similarly has the reduced gain characteristics of 0.05 dB. A power device 36 puts those amplified signals together and outputs it from an output terminal 37. The power distributor and the device 36 are direcrtional couplers of the ratio of 3 dB without loss. Thus, gain variation is suppressed to the level of 0.002 dB so that distortion is reduced.

30. 发明专利

JP2000311986A DIGITAL HIGH FREQUENCY ANALOG HYBRID IC CHIP, IC PACKAGE AND DIGITAL HIGH FREQUENCY ANALOG HYBRID IC 失效
公开(公告)号：JP2000311986A
公开(公告)日：2000-11-07
申请号：JP11890899
申请日：1999-04-27
申请人： MITSUBISHI ELECTRIC CORP
发明人： NAKAYAMA MASATOSHI , YAMAUCHI KAZUHISA , IKEDA YUKIO
IPC分类号： H01L23/12 , H01L21/822 , H01L23/552 , H01L27/04
摘要： PROBLEM TO BE SOLVED: To reduce the size by grounding at least one I/O pad of a digital circuit provided between the I/O pads of high frequency signal I/O terminals adjacent to digital I/O terminals through a capacitor which can be considered to be short-circuited at high frequency and to be opened for a digital signal. SOLUTION: As a pin for isolating I/O pins 1a at a high frequency analog section, an I/O pin 1c for digital signal is provided at a position where a pin having only ground function is normally provided. It is grounded, on the outside of a package, through a capacitor 7 which can be considered as a sufficiently low impedance at a high frequency used in a high frequency analog and as a sufficiently high impedance at the frequency of a digital signal handled in a digital circuit. Consequently, a function for isolating the I/O pins 1a at the high frequency analog section can be provided without causing a damage on the function of the digital I/O pin 1c as the I/O pin of a digital circuit.

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