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21. 发明专利

JPS59172648A Mask for use in x-ray exposure 失效
标题翻译：掩蔽在X射线曝光中使用
公开(公告)号：JPS59172648A
公开(公告)日：1984-09-29
申请号：JP4816383
申请日：1983-03-22
申请人： Mitsubishi Electric Corp
发明人： YOSHIOKA NOBUYUKI , SUZUKI YOSHIMARE
IPC分类号： G03F1/60 , H01L21/027
CPC分类号： G03F1/22
摘要： PURPOSE:To prevent deformation and breakdown of a pattern and to simplify its manufacturing process by implanting the golden thin film pattern in the surface of a light transmitting substrate. CONSTITUTION:A desired resist pattern 8 is formed on a silicon nitride film 7 formed on a silicon substrate 6, and a pattern groove 7a is engraved on the surface of the film 7 by the reactive ion etching of, e.g. CF4 gas at 0.03 Torr pressure. A golden thin film 9 is formed by vapor deposition in a thickness similar to the depth of the groove 7a, and then, the resist pattern and the golden thin film 9 on it are selectively removed by dipping all of them into an org. solvent, and the reverse side of the silicon substrate 6 is etched with a soln. of KOH to complete an X-ray exposure mask having a golden thin film pattern implanted in the surface of transparent substrate 7.
摘要翻译：目的：通过将金色薄膜图案植入光透射基板的表面，防止图案的变形和破坏并简化其制造工艺。构成：在形成在硅衬底6上的氮化硅膜7上形成所需的抗蚀剂图案8，并且通过例如反应离子蚀刻将图案凹槽7a雕刻在膜7的表面上。 CF4气体在0.03乇压力下。通过气相沉积形成金属薄膜9，其厚度类似于凹槽7a的深度，然后通过将其全部浸渍到组织中来选择性地去除其上的抗蚀剂图案和金色薄膜9。溶剂，用硅溶胶蚀刻硅衬底6的反面。的KOH以完成注入在透明基板7的表面上的金色薄膜图案的X射线曝光掩模。

22. 发明专利

JPH04330712A MANUFACTURE OF MASK FOR MANUFACTURING OF FINE-PATTERN 失效
公开(公告)号：JPH04330712A
公开(公告)日：1992-11-18
申请号：JP11692391
申请日：1991-04-19
申请人： MITSUBISHI ELECTRIC CORP
发明人： FUJINO TAKESHI , YOSHIOKA NOBUYUKI
IPC分类号： G03F1/22 , H01L21/027
摘要： PURPOSE:To restrain that a resist mask is denatured and that the shape, of an absorber pattern is worsened by a method wherein, in the manufacturing flow of an X-ray, mask, the rear of the X-ray mask is coated with a heat- conductive film before and X-ray absorber is etched and the film is removed after the absorber has been etched. CONSTITUTION:For example, water-soluble polyvinyl alcohol is dripped onto the rear of an X-ray mask; it is baked in an oven; a rear heat-conductive film 7 whose thickness is at several hundred mum is formed. Then, the etching operation of an X-ray absorber 3 composed of, e.g. tungsten is executed by an etching gas composed of the mixed gas of fluoride ions with nitrogen gas by using an RIE apparatus provided with a magnetic field. Lastly, in order to remove the rear heat-conductive film 7, the X-ray mask is placed in warm water, the air is bubbled, and an X-ray mask is obtained. Thereby, it is possible to prevent a substrate temperature from being raised at the etching operation, and it is possible to restrain that a resist mask is denatured and that the shape of an absorber pattern is worsened.

23. 发明专利

JPH04271125A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH04271125A
公开(公告)日：1992-09-28
申请号：JP945791
申请日：1991-01-30
申请人： MITSUBISHI ELECTRIC CORP
发明人： KOMORI JUNKO , SHIRAHATA MASAYOSHI , YOSHIOKA NOBUYUKI
IPC分类号： H01L21/28 , H01L21/268 , H01L21/3205 , H01L23/52
摘要： PURPOSE:To form an aluminum wiring of high electromigration resistance. CONSTITUTION:An aluminum wiring 1 is buried in a trench 9 formed in an interlayer insulating film 8 on a silicon substrate 7, and subjected to annealing by laser scanning. As the result, the periphery of the aluminum wiring 1 is surrounded by the interlayer insulating film 8 serving as a thermal insulator, so that heat is not dissipated from the periphery of the aluminum wiring, and crystallization from the periphery can be prevented. Thereby crystal grains of aluminum can be grown to be large. On account of the increase of crystal grain diameter, the density of gain boundary generating aluminum atom migration is decreased, and the aluminum wiring of high reliability can be formed.

24. 发明专利

JPH04198934A PHASE SHIFT MASK AND PRODUCTION THEREOF 失效
公开(公告)号：JPH04198934A
公开(公告)日：1992-07-20
申请号：JP32561590
申请日：1990-11-29
申请人： ASAHI GLASS CO LTD , MITSUBISHI ELECTRIC CORP
发明人： UNOKI MASAO , YOKOZUKA TOSHISUKE , YOSHIOKA NOBUYUKI , WATAKABE YAICHIRO
IPC分类号： G03F1/30 , G03F1/68 , H01L21/027 , H01L21/30
摘要： PURPOSE:To easily form a shifter pattern having a refractive index nearly equal to or lower than that of a glass substrate and high transmissivity of light for exposure by using a polymer having a fluorine-contg. alicyclic structure as a shifter material. CONSTITUTION:The shifter pattern of a phase shift mask is formed with a polymer having a fluorine-contg. alicyclic structure. Though the polymer is fluororesin, it has high transparency and high light transmissivity because it has low crystallinity or is almost noncrystalline. The polymer has a lower refractive index than the conventional hydrocarbon resin and the refractive index is nearly equal to or lower than that of glass. The polymer enables the formation of a thin film by spin coating or other method like the conventional polymer used for producing a semiconductor, a fine pattern can be formed by dry etching and superior resistance to light, moisture, weather and chemicals is ensured. A superior shifter pattern can be obtd.

25. 发明专利

JPH04149553A PHASE SHIFT MASK 失效
公开(公告)号：JPH04149553A
公开(公告)日：1992-05-22
申请号：JP27470390
申请日：1990-10-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIOKA NOBUYUKI
IPC分类号： C23C14/06 , C23C14/10 , G03F1/30 , G03F1/68 , H01L21/027
摘要： PURPOSE:To obtain a shifter for the phase shift mask which has large mechanical strength and small thermal strain by forming a shifter film by an ECR-VCD method while a substrate is held at room temperature. CONSTITUTION:An ECR-CVD device is used to form the SiO2 shift film 15 on the room-temperature substrate (glass). The ECR-CVD device applies a microwave 13 while reactive gas 12 is admitted to a chamber 11 to produce plasma, and thus the DC magnetic field produced by a magnetic coil 10 is dispersed, so the plasma is led out of a chamber 14a to a chamber 11b to deposit the shifter film on the substrate 14. At this time, SiH4 gas and O2 gas are applied as the reactive gas to obtain an SiO2 film like glass of bulk. Further, N2 is added to the reactive gas to form an SiOxNY film as the shifter film. The concentration of N2 is properly varied to control the refractive index and transmissivity of the shifter film.

26. 发明专利

JPH01311257A INSPECTING METHOD FOR PATTERN DEFECT 失效
公开(公告)号：JPH01311257A
公开(公告)日：1989-12-15
申请号：JP14225588
申请日：1988-06-09
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIOKA NOBUYUKI , TAKEUCHI SUSUMU
IPC分类号： G01B11/24 , G01N21/88 , G01N21/956 , H01L21/66
摘要： PURPOSE:To detect the pattern defect in a short time by vibrating a pattern surface to be inspected and observing it by an image sensor. CONSTITUTION:The pattern 11 to be inspected is in a mutually parallel and has periodically repeated line and space pattern shape. Here, the pattern 11 is vibrated in operation cycles matching with pattern cycles 13 at right angles to line patterns 12 as shown by an arrow and a two-dimensional image sensor 21 makes an observation for a time longer than the vibration cycles. At this time, a detected image 31 shows a detection image of the patterns 12 as the integral quantity of the observation time and its vibration amplitude is equal to the pattern cycles 13, so the patterns 12 are represented as a monotone image apparently. Therefore, a pattern defect 11a projecting from the patterns 12 is detected clearly as a defect image 31a which is independently conspicuous in the monotone image plane.

27. 发明专利

JPS63104327A X-RAY MASK AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS63104327A
公开(公告)日：1988-05-09
申请号：JP25011286
申请日：1986-10-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： ISHIO NORIAKI , FUJIWARA NOBUO , YOSHIOKA NOBUYUKI
IPC分类号： G03F1/00 , G03F1/22 , H01L21/027 , H01L21/30
摘要： PURPOSE:To accurately form a transfer pattern in a hole corresponding part by forming the thickness of a transfer pattern absorption layer in the corresponding part thinner than that of an absorption of layer of a corresponding part out of the holes in combination of a 3-layer process and twice plating processes. CONSTITUTION:First gold plating is executed on a corresponding part 2 out of holes to form a first gold plating layer 16 in a thickness of approx. 0.5-1.5mum. Second gold plating is performed in a thickness of approx. 0.7-1.0mum, a second gold plating layer 19 is selectively formed on the layer 16 on the part 2, and a gold plating layer 20 is simultaneously selectively formed in a pattern on a hole corresponding part 1. Then, a gold-plated layer 20 selectively patterned in a thickness of approx. 0.7-1.0mum as an absorption layer, i.e., a transfer pattern 20a is formed.

28. 发明专利

JPS6351632A X-RAY EXPOSING MASK AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS6351632A
公开(公告)日：1988-03-04
申请号：JP19599186
申请日：1986-08-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIOKA NOBUYUKI , FUJIWARA NOBUO
IPC分类号： G03F1/00 , G03F1/22 , H01L21/027 , H01L21/30
摘要： PURPOSE:To perform a fine processing using a reactive ion-etching method as well as to improve the adhesive property with the material such as SiN, SiO2 and the like which becomes a mask substrate by a method wherein the Ti-W alloy, having the Ti content of the specific range, is used as the material for the X-ray absorber pattern film in the manufacture of an X-ray exposing mask. CONSTITUTION:A Ti-W alloy is used as the material for the X-ray absorbing pattern film 14 to be formed on a mask substrate. The content of Ti is set in the range of 0.5-10 wt. %. An SiO film 13, a Ti-W alloy film 14 and an SiO2 film 15a are formed successively by performing a sputtering film-forming method on the X-ray transmitting film 11 such as SiN and the like having a ring member 12 provided on the circumferential part on the lower surface, and an electron beam sensitive resist film 16a is formed on the SiO2 film 15a using a spin-coating method. Then, using said resist film 16a as a mask, an SiO2 film 15a is selectively removed by etching by performing a reactive ion-etching method using reactive gas of CF4 + H2 and an SiO2 film pattern 15 is formed. Subsequently, using said SiO2 film pattern 15 as a mask, the Ti-W alloy film l4a is selectively removed by etching by performing a reactive ion etching using the reactive gas of CF4+ 02. Subsequently, using the above- mentioned SiO2 film pattern 15 as a mask, the Ti-W alloy film l4a is selectively removed by performing a reactive ion-etching using the reactive gas of CF4 +O2. Then, the SiO2 film pattern 15 is removed, and a pattern film 14 is formed using the prescribed Ti-W alloy.

29. 发明专利

JPS62194664A SEMICONDUCTOR MEMORY 失效
公开(公告)号：JPS62194664A
公开(公告)日：1987-08-27
申请号：JP3776686
申请日：1986-02-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： NISHIOKA KYUSAKU , YOSHIOKA NOBUYUKI , HIRAYAMA MAKOTO , HOSONO KUNIHIRO
IPC分类号： H01L27/10 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108
摘要： PURPOSE:To increase capacitor capacitance, and to improve the degree of integration without lowering charge storage capacity by spirally forming a groove section in a grooving type capacitor. CONSTITUTION:A spiral groove section 5 is cut to an silicon substrate 1 through dry etching in depth of approximately 2-4mum, and an impurity diffusion region is shaped to the surface of the groove section 5. Thin silicon oxide film (SiO2) in approximately 100-200Angstrom are formed to the surface of the groove section 5 as insulating films 3, and a conductor film 4 such as a polycrystalline silicon film to which an impurity is doped is shaped as a cell plate. Accordingly, the groove section 5 is formed spirally, and a capacitor is shaped to the groove section 5, thus largely forming the surface area of the capacitor, then increasing capacitor capacitance by a small area, provided that field concentration is difficult to be generated.

30. 发明专利

JPS62155515A MASK FOR X-RAY EXPOSURE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS62155515A
公开(公告)日：1987-07-10
申请号：JP29696185
申请日：1985-12-27
申请人： MITSUBISHI ELECTRIC CORP
发明人： NAKADA HIDEFUMI , NISHIKAWA KIICHI , YOSHIOKA NOBUYUKI , SHIMANO HIROKI
IPC分类号： G03F1/60 , H01L21/027 , H01L21/30
摘要： PURPOSE:To form a latticed reinforcing material consisting of the same material as a mask substrate with a flat surface only by desired thickness by laminating a mask substrate material on a substrate, burying a latticed recessed section shaped by etching the surface of the substrate. CONSTITUTION:A section such as a section on an silicon substrate 1 corresponding to the section of a mask through which X-rays may not be transmitted is patterned in a latticed manner, and etched in desired depth, thus forming a recessed section 7a. The recessed section 7a is buried and a material for a mask substrate 2 is laminated only by desired thickness, and a flattening material 3 is laminated on the mask substrate 2 so that the surface is flattened. The flattening material 3 is removed completely so that the surface of the mask substrate 2 is exposed under conditions, in which the etching rates of a material layer for the mask substrate 2 and said flattening material 3 layer are equalized, such as the plasma etching of CF4+H2. A pattern 4 for exposure is formed onto said exposed mask substrate 2. Accordingly, a latticed reinforcing material consisting of the same material as the mask substrate is unified with the mask substrate, and can be shaped.

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