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21. 发明专利

JPH02214203A MICROWAVE INTEGRATED CIRCUIT 失效
公开(公告)号：JPH02214203A
公开(公告)日：1990-08-27
申请号：JP3385089
申请日：1989-02-15
申请人： MITSUBISHI ELECTRIC CORP
发明人： KUNUGI MASARU
IPC分类号： H01P5/08 , H01P5/02
摘要： PURPOSE:To reduce the reflection in a connected part by using a converter with a throughhole exposed gradually to a slope face formed thereto so as to connect a case of a microwave integrated circuit and a ground conductor of a transmission line. CONSTITUTION:A lead terminal 22 led from a case 21 of a microwave integrated circuit 2 passes through the center of a throughhole 32 of a converter 3 and connects to a line pattern of a microstrip line 1. Since the exposed state of the throughhole 32 is varied continuously with a slope 31, the distribution state of the electric field is varied gradually in the part of the converter 3 from a parallel state directed downward to a radiation shape. Thus, the transmission mode of a radio wave from the microstrip line 1 is converted from the microstrip mode into the coaxial mode gradually and the radio wave is sent to the microwave integrated circuit 2. Thus, the presence of reflection at the connection part is reduced.

22. 发明专利

JPS63219210A FET AMPLIFIER 失效
公开(公告)号：JPS63219210A
公开(公告)日：1988-09-12
申请号：JP5280987
申请日：1987-03-06
申请人： MITSUBISHI ELECTRIC CORP
发明人： KUNUGI MASARU
IPC分类号： H03F3/193 , H03F3/60
摘要： PURPOSE:To realize low noise/low input V.S.W.R capable of being operated stably by selecting properly the capacitance of a capacitor inserted in series or in parallel with a source inductance. CONSTITUTION:It is possible to realize the low noise/low input V.S.W.R by inserting a proper inductance 4 at a prescribed band to a source electrode of an FET. However, the inductance 4 at a higher frequency than the required band has an impedance of jWL and the source is not regarded to be connected completely to ground and the isolation between the drain and gate of the FET is deteriorated. A capacitance 5a is inserted in series with the inductance with a proper value, then the impedance is jWL-1/WC). Thus, in selecting the L, C, the source is regarded to be connected completely to ground, and the isolation is improved to obtain a stable amplifier at a wide band.

23. 发明专利

JPS6348902A MATCHING TYPE DIODE CIRCUIT 失效
公开(公告)号：JPS6348902A
公开(公告)日：1988-03-01
申请号：JP19319086
申请日：1986-08-19
申请人： MITSUBISHI ELECTRIC CORP
发明人： KUNUGI MASARU
IPC分类号： H01P1/00 , H01P5/02 , H01P5/08
摘要： PURPOSE:To reduce the deviation of the matching in a high frequency band by adding a capacitive circuit to a microstrip line. CONSTITUTION:A radio wave propagated through the microstrip line 2, as shown in the Smith chart, goes from a point A to a point B by the inductance component of a gold wire 4, goes to a point C from the point B by the capacitive component of a pin diode 3, goes to a point D from the point C by the inductive component of the gold wire 4, returns to a point E from the point D by a capacitive stub 5 to form a matching circuit. That is, as the frequency goes higher, since the inductance component of the wire 4 is increased, the rotation from point A point B point C point D is eminent and the impedance resides in the point D finally to make the deviation in the matching eminent. Through the constitution above, since the stub 5 is added, the rotation from the point D to the point E allows the matching of circuit even with the dispersion in the capacitance of the diode 3 or the inductive component of the wire 4.

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