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21. 发明专利

JP2001358067A METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001358067A
公开(公告)日：2001-12-26
申请号：JP2001114765
申请日：2001-04-13
申请人： HITACHI LTD
发明人： TANAKA TOSHIHIKO , UCHINO MASAICHI , ASAI NAOKO
IPC分类号： G03F7/11 , G03F7/20 , G03F9/00 , H01L21/027 , H01L21/8242 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a fine and accurate pattern even on a substrate having high reflectivity, a substrate or the like in which a transparent film is interleaved by solving a problem (deterioration of a dimensional accuracy) due to halation or interference of a reflected light from the substrate and conducting an accurate mask alignment. SOLUTION: A method for manufacturing a semiconductor device comprises the steps of forming an antireflection film made of a two-layer film of a lower layer as a reflection film and an upper layer as an interference film to an exposure light on the substrate, emitting a pattern inspecting light via the antireflection film in the case of exposing a desired pattern on a photosensitive thin film coating the antireflection film, thereby aligning a photomask with the substrate.

22. 发明专利

JP2001350268A METHOD FOR PRODUCING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001350268A
公开(公告)日：2001-12-21
申请号：JP2001114766
申请日：2001-04-13
申请人： HITACHI LTD
发明人： TANAKA TOSHIHIKO , UCHINO MASAICHI , ASAI NAOKO
IPC分类号： G03F7/11 , G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a method by which problem (deterioration of dimensional accuracy) caused by halation and interference due to light reflected from a substrate is solved and a a fine high accuracy pattern is formed even on a substrate having a high reflectance, a substrate with a transparent film or the like. SOLUTION: An antireflection film in which an upper layer film comprises an organic film acting as an interference film to light for exposure and a lower layer film is a light shielding film having a higher rate of absorption of light for exposure than the upper layer film is formed between a substrate to be worked and a resist film.

23. 发明专利

JP2000347420A FORMATION OF RESIST PATTERN 失效
公开(公告)号：JP2000347420A
公开(公告)日：2000-12-15
申请号：JP15747099
申请日：1999-06-04
申请人： HITACHI LTD
发明人： TANAKA TOSHIHIKO
IPC分类号： G03F7/038 , G03F7/26 , G03F7/30
摘要： PROBLEM TO BE SOLVED: To form a resist pattern having desired apertures so that a resist does not remain in grooves and pores surrounded by light shielding materials which hardly transmit the exposure light by making a part to form the resist apertures into an exposure light shielding part using a negative resist. SOLUTION: Such a Si substrate 10 is formed by a regular method, that is covered by an oxide film 11 on the surface and is provided with pores each having 0.25 μm width and 1.25 μm depth. Si is opaque to the light of 365 nm. A negative resist 12 is applied onto the Si substrate 10, which is then irradiated with the exposure light 14 through a lens using a mask 13 which makes the part to be implanted into the light shielding part and subsequently developed to form a resist aperture part 15. Since the pores are so small as to have 0.25 μm width and 1.25 μm depth, i.e., 5 aspect ratio, the resist does not remain in the pores so that the resist aperture can easily be formed. The implantation is then performed. By this method, the impurities can be diffused into the desired pore parts.

24. 发明专利

JPH09134867A FORMING METHOD OF FILM AND PATTERN 失效
公开(公告)号：JPH09134867A
公开(公告)日：1997-05-20
申请号：JP29246695
申请日：1995-11-10
申请人： HITACHI LTD
发明人： YAMANAKA RYOKO , ASAI NAOKO , MINE TOSHIYUKI , TANAKA TOSHIHIKO
IPC分类号： G03F7/004 , G03F7/11 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To enable an excellent resist pattern to be formed on a film work by a method wherein inert gas such as nitrogen gas or the like is introduced so as to form an oxide film of polyatomic layer on the surface of the film work to modify hydroxyl group on the surface of a ground film such as a nitride film. SOLUTION: A film work 1 is introduced into a sputtering device where a silicon piece is used as a target, nitrogen gas or a mixed gas of nitrogen and other is introduced as buffer gas into the device, a sputtering process is started. A silicon nitride film 2 made up with silicon atoms 8 emitted from the silicon target and nitrogen atoms 9 contained in buffer gas is formed on the surface of the substrate work 1. After the film 2 is formed as thick as required, buffer gas is replaced with argon gas, and a film forming process is carried on. At this point, buffer gas may be gradually varied in composition. As a result, a polyatomic silicon layer 12 is formed on the silicon nitride film 2. Thereafter, when the substrate work 1 is unloaded from the sputtering device, a natural oxide film is formed on the surface of the substrate work 1. By this setup, an excellent resist pattern can be obtained.

25. 发明专利

JPH08314155A PATTERN FORMING METHOD 失效
公开(公告)号：JPH08314155A
公开(公告)日：1996-11-29
申请号：JP12111395
申请日：1995-05-19
申请人： AGENCY IND SCIENCE TECHN , HITACHI LTD
发明人： YAMAGUCHI ATSUKO , TANAKA TOSHIHIKO , TACHIBANA HIROAKI , MATSUMOTO MUTSUYOSHI
IPC分类号： G03F7/038 , G03F7/075 , G03F7/36 , G03F7/40 , H01L21/027 , H01L21/302 , H01L21/3065
摘要： PURPOSE: To enhance throughput and safety by using a polymer easy to degrade and evaporate in a silicon-contg. photosensitive layer and evaporating the unexposed part of the layer in an atmosphere kept under vacuum. CONSTITUTION: A silicon substrate 20 with a novolak resin film 21 and a silicon- contg. polymer film 22 deposited in order is set in a chamber. Gaseous oxygen is introduced into the chamber until a specified pressure of gaseous oxygen is attained and the surface of the silicon-contg. polymer film 22 is exposed with laser light 23. The polymer of the exposed part is degraded and reacts with oxygen in the chamber to form silicon oxide. The chamber is then evacuated to a specified pressure or below by a turbo-molecular pump, a mercury lamp 26 is allowed to act and the entire surface of the silicon-contg. polymer film 22 is irradiated with UV 27. The polymer of the unexposed part is degraded and evaporated in fragments 28 and only the oxidized silicon-contg. polymer film 25 remains on the novolak resin film 21.

26. 发明专利

JPH08204154A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH08204154A
公开(公告)日：1996-08-09
申请号：JP24908095
申请日：1995-09-27
申请人： HITACHI LTD
发明人： TANAKA TOSHIHIKO , HASEGAWA NORIO , KAWAMOTO YOSHIFUMI , KIMURA SHINICHIRO , KAGA TORU , KURE TOKUO
IPC分类号： H01L21/316 , H01L21/302 , H01L21/3065 , H01L21/8242 , H01L27/108
摘要： PURPOSE: To reduce height difference between a memory cell part and a peripheral circuit part, eliminate imperfect resolution of a pattern, and improve dimensional precisions, by forming a dummy pattern on the peripheral circuit part of a semiconductor device having the memory cell part and the peripheral circuit part. CONSTITUTION: A resist mask 2 is formed on an Si substrate 1, and its aperture part is used as a region 3 for forming a memory cell. The resist is used as a mask, Si is subjected to dry etching, and the resist film 2 is eliminated. An Si substrate 1', recessed in the region for forming a memory cell, is formed. Thermal oxidation is performed, an oxide film is eliminated by wet etching, the damage on the Si semiconductor surface 1' is recovered, and a memory circuit 4 and a peripheral circuit 5 are formed. The peripheral circuit contains direct peripheral circuits such as a data driver, a word driver and a sense amplifier. Since the height difference between the elements is the memory cell part and the peripheral circuit part can be reduced, both regions can be set in the focal depth of an aligner, and a fine pattern of high precision can be formed.

27. 发明专利

JPH0824035B2 失效
公开(公告)号：JPH0824035B2
公开(公告)日：1996-03-06
申请号：JP17750285
申请日：1985-08-14
申请人： HITACHI LTD
发明人： TANAKA TOSHIHIKO
IPC分类号： H01J29/87 , H01J29/88

28. 发明专利

JPH0844052A FORMATION OF PATTERN AND RADIATION SENSITIVE COMPOSITION USING SAME 失效
公开(公告)号：JPH0844052A
公开(公告)日：1996-02-16
申请号：JP18003194
申请日：1994-08-01
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： HATTORI KOJI , UENO TAKUMI , IMAI AKIRA , YAMAMOTO JIRO , TANAKA TOSHIHIKO , ONOZUKA TOSHIHIKO , MORIUCHI NOBORU , SHIRAI SEIICHIRO
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
摘要： PURPOSE:To form a fine pattern in which dimensional variation is reduced without increasing the number of stages by using a positive radiation sensitive composition and changing a thickness of a film. CONSTITUTION:When a desired pattern is made by forming a film consisting of a radiation sensitive composition on a substrate, exposing the film by using patterned radioactive rays and exposing the film to a developing agent after heating the film preferably, the positive radiation sensitive composition is used as the radiation sensitive composition, and a thickness of the film is composed so that it changes >=0.7lambda/2n by exposure when its refractive index is defined as (n) and a wavelength of the radioactive rays is defined as lambda. Further, when the film thickness is differ partially, a part where the film thickness is thinnest in an exposed part is measured. And this change is preferably set at >=lambda/2n. Moreover, this change is caused by the decrease of the film thickness preferably. When the film thickness decreases, the decrease is less than 40% of the film thickness before exposure and the film thickness after exposure is preferably more than 60% of the film thickness before exposure.

29. 发明专利

JPH0720637A RESIST PATTERN FORMING METHOD AND DEVELOPING DEVICE 失效
公开(公告)号：JPH0720637A
公开(公告)日：1995-01-24
申请号：JP16441693
申请日：1993-07-02
申请人： HITACHI LTD , SOLTEC KK
发明人： TANAKA TOSHIHIKO , OGAWA TARO , MORIGAMI MITSUAKI , OIIZUMI HIROAKI
IPC分类号： G03F7/30 , B81C99/00 , G03F7/32 , H01L21/027
摘要： PURPOSE:To provide a resist pattern forming method by which the collapse of a resist pattern is not caused and to provide a developing device. CONSTITUTION:Development is carried out with a developer 5, this developer 5 is rinsed out with a liq. rinse 6 and this rinse 6 is converted into a solid phase 7 and sublimed. In other way, development is carried out with a developer, this developer is rinsed out with a liq. rinse and a liq. substitute is substd. for the rinse, converted into a solid phase and sublimed. The collapse of a resist pattern, especially a dense fine resist pattern or a resist pattern having a high aspect ratio can be prevented.

30. 发明专利

JPH06349765A ION IMPLANTATION METHOD 失效
公开(公告)号：JPH06349765A
公开(公告)日：1994-12-22
申请号：JP13431493
申请日：1993-06-04
申请人： HITACHI LTD
发明人： TANAKA TOSHIHIKO
IPC分类号： H01L21/265 , H01L21/027
摘要： PURPOSE:To avoid halation and realize highly accurate ion implantation to form a fine pattern by a method wherein an organic film which absorbs an exposure light is formed on a substrate, a resist pattern is formed on the organic film and required ions are implanted without processing the organic film. CONSTITUTION:An element isolation oxide film 2, an oxide film 3 and a polycrystalline silicon film 4 which is a gate are formed on an Si substrate 1 to obtain an MDS-FET structure. Then an organic film 5 which absorbs an exposure light for pattern exposure is formed by coating and heat treatment. Then a resist pattern 6 is formed by resist coating, exposure and development. After that, ions are implanted 7 to form an ion implantaion layer 8. After that, an ordinary plasma treatment is performed and the light absorbing organic film 5 is removed with the resist to form an offset gate MOS-FET. As the ions are implanted into the required positions of the obtained MOS-FET, required electrical characteristics can be obtained. With this constitution, halation can be avoided, so that this ion implantation method can be applied to the formation of a fine pattern.

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