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21. 发明专利

JPH03278608A MULTI-STAGE CASCADE CONNECTION SURFACE ACOUSTIC WAVE FILTER AND COMMUNICATION EQUIPMENT USING SAME 失效
公开(公告)号：JPH03278608A
公开(公告)日：1991-12-10
申请号：JP7685390
申请日：1990-03-28
申请人： HITACHI LTD
发明人： TAKEMA TAKEMITSU
IPC分类号： H03H9/145 , H03H9/64
摘要： PURPOSE:To improve an out-band suppression degree by forming ground electrode finger bus patterns for interdigital electrodes arranged in parallel with an adjacent stage separately from each other and connecting the patterns to ground with separate leads. CONSTITUTION:An ST-cut crystal is used for a piezoelectric substrate 1, an interdigital electrode 2 and a grating reflector electrode 3 are arranged onto the substrate by the photolithography technology and two-port resonators are connected in cascade by two stages. Then aluminum is used for the electrode material. Moreover, a grounding bonding pad at 1st stage and 2nd stage connection parts is divided to form separated bonding pads, and they are connected to ground by separate leads. Since leakage of a current having been caused in this part is avoided, the out-band suppression degree is improved.

22. 发明专利

JPH03238909A SURFACE ACOUSTIC WAVE FILTER 失效
公开(公告)号：JPH03238909A
公开(公告)日：1991-10-24
申请号：JP3372490
申请日：1990-02-16
申请人： HITACHI LTD
发明人： HIKINO OSAMU , SHIBA TAKASHI , TAKEMA TAKEMITSU , YAMADA JUN
IPC分类号： H03H9/145 , H03H9/64
摘要： PURPOSE:To suppress the effect of the diffraction effect of simple electrode structure by expanding a cross width of an electrode finger opposite to each other so as to suppress the effect of a diffraction wave without changing a surface acoustic wave exciting strength between the electrode finger pairs opposite to each other. CONSTITUTION:Electrode fingers 1, 3 prolonged from upper and lower buses 4, 5 and a stray electrode 2 have cross parts whose cross width is W1 and W2 independently electrically of an adjacent opposite electrode. Since a level of a floating electrode 2 has an intermediate level between a level of the electrode finger 1 and a level of the electrode finger 3, the phase of a surface acoustic wave element is an exciting phase obtained at the two cross parts whose cross width is W1 and W2 to give excitation of the strength proportional to the cross width W1 and W2. Thus, the excitation of the surface acoustic wave of the desired strength is obtained by selecting properly the cross width W1 and W2 because the surface acoustic wave excited by the floating electrode 2 and the electrode fingers 1, 3 is propagated while being cancelled together. Thus, the diffraction effect is suppressed.

23. 发明专利

JPS63169109A SURFACE ACOUSTIC WAVE ELEMENT 失效
公开(公告)号：JPS63169109A
公开(公告)日：1988-07-13
申请号：JP37187
申请日：1987-01-07
申请人： HITACHI LTD
发明人： HOSAKA NORIO , TAKEMA TAKEMITSU , YAMADA JUN
IPC分类号： H03H9/145 , H03H3/08
摘要： PURPOSE:To make an effective use of a substrate by checking the resistance of an electrode by using a linear pattern which is a metal film formed on a planned cutting line running from a wafer to a chip. CONSTITUTION:In the process of forming many electrode patterns of surface acoustic wave element simultaneously on the water made of a piezoelectric substrate material, an electrode-shaped linear pattern having voltage terminals 3 and current terminals 4 is provided on the planned lateral cutting line 5 that is for dividing the wafer for each element chip, and the resistance value of the linear pattern being in a wafer-state is measured by four terminal method. Accordingly, the resistance value of the electrode pattern of the element in the vicinity of the said electrode-shaped linear pattern whose metal film forming state is estimated to be equal to that of the electrode pattern itself, can be decided to be good or no good. As a result, the area of the substrate can be effectively made use of.

24. 发明专利

JPS6231213A SURFACE ACOUSTIC WAVE RESONATOR 失效
公开(公告)号：JPS6231213A
公开(公告)日：1987-02-10
申请号：JP16981585
申请日：1985-08-02
申请人： HITACHI LTD
发明人： TAKEMA TAKEMITSU , HOSAKA NORIO , SHIBA TAKASHI , YAMADA JUN
IPC分类号： H03H9/25 , H03H3/08
摘要： PURPOSE:To remove a bulk wave conversion loss and to obtain the characteristics of a low loss and high Q in a high frequency band by forming the transmission line of a surface acoustic wave as a loop structure to shut in the surface wave without using a grating reflector. CONSTITUTION:A ZnO piezo-electric thin film 2 is formed on the side of a cylindrical elastic body 1 by sputtering and a comb-line electrode 3 consisting of aluminum is formed on the surface of the thin film 2 by a photoetching method. When the wavelength of oscillation frequency is defined as lambda0, the radius (r) of the elastic body 1 satisfies the relation of r=Mlambda/2pi (M is an integer of >=1). Since the surface acoustic wave is transmitted to the surface of the side of the elastic body 1, the surface acoustic wave is repeatedly transmitted through the transmission course, energy is shut in. Since waves with wavelength lambda are applied at the same phase on the basis of said relation, resonance is generated at the frequency of the wavelength lambda. Consequently, a conversion loss to a bulk wave which may be generated by a grating reflector in an ordinary resonator can be removed.

25. 发明专利

JPS6212206A SURFACE ACOUSTIC WAVE RESONATOR 失效
公开(公告)号：JPS6212206A
公开(公告)日：1987-01-21
申请号：JP15021685
申请日：1985-07-10
申请人： HITACHI LTD
发明人： SHIBA TAKASHI , HOSAKA NORIO , TAKEMA TAKEMITSU , YAMADA JUN
IPC分类号： H03H9/25 , H03H3/08
摘要： PURPOSE:To obtain a surface acoustic wave resonator with excellent temperature characteristic in peak frequency and less in spurious response by forming a distance between the edge of a reflector and the edge of a reed screen electrode and further distance of the edges of the adjacent electrodes as the integer number of multiple of a half wavelength in the frequency of the surface acoustic wave. CONSTITUTION:Two reflector electrodes 2 and two reed screen electrodes 3 between the electrodes 2 are arranged on a surface acoustic wave substrate 1, a signal is inputted to input terminals 4, 4', and a load is connected to output terminals 5, 5'. The distance l1 between the reflector and the reed screen electrode is selected as the integer number of multiple of a half wavelength of the free surface wave corresponding to the center frequency at the reed screen electrode, then the resonance condition between the reflector and the reed screen electrode is selected as f=fi=fc. Similarly, distances l2, l3 are selected as an integer number of multiple of lambdafc/2, then the resonance condition of each part is matched. Thus, the resonator with excellent temperature characteristic at high frequencies and excellent spurious characteristic is obtained.

26. 发明专利

JPS61236207A MANUFACTURE OF SURFACE ACOUSTIC WAVE RESONATOR 失效
公开(公告)号：JPS61236207A
公开(公告)日：1986-10-21
申请号：JP7638585
申请日：1985-04-12
申请人： HITACHI LTD
发明人： HOSAKA NORIO , SHIBA TAKASHI , TAKEMA TAKEMITSU , YAMADA JUN
IPC分类号： H03H3/08 , H03H9/145 , H03H9/25
摘要： PURPOSE:To manufacture a surface acoustic wave resonator possible for fine adjustment simply and efficiently by forming a grating reflector with two thin film layers having a different etching capability and adjusting properly the quantity of etching removal of each layer so as to adjust the film thickness step difference. CONSTITUTION:After an Si layer is formed on an ST-cut crystal substrate 1 in a thickness of 700Angstrom , an unnecessary Si layer is removed by etching to form the 1st thin film layer 5 (A). Then an Al layer is formed in a thickness of 1,000Angstrom as the 2nd thin film layer 6 (B). Further, a reed screen electrode and a grating reflector are formed by using the photo lithography technology using a corrosion substance having a high etching capability to Al and a low etching capability to Si (C). In this step, the frequency test is conducted and when any adjustment is required, the Si layer or the Al layer is removed by etching by a prescribed quantity according to the relation between the film thickness step difference and the frequency change to adjust the film thickness step difference as shown in figures (D) and (E) thereby applying fine adjustment of the frequency.

27. 发明专利

JPS61199314A SURFACE ACOUSTIC WAVE RESONATOR 失效
公开(公告)号：JPS61199314A
公开(公告)日：1986-09-03
申请号：JP3871485
申请日：1985-03-01
申请人： HITACHI LTD
发明人： TAKEMA TAKEMITSU , HOSAKA NORIO , SASAKI ATSUSHI , YAMADA JUN
IPC分类号： H03H9/25 , H03H3/08 , H03H9/145
摘要： PURPOSE:To attain miniaturization of the size of an element by forming circularly a comb-line electrode and a grating reflector while taking a point as a center so as to improve the resonance efficiency. CONSTITUTION:The comb-line electrode 2 and the grating reflectors 3, 4 are formed as a circle while taking a point as a center. For example, the com-bline electrode 2 and the grating reflectors 3, 4 are formed as a circle around a point on a piezoelectric substrate 1 by an Al thin film having a nearly 1mum of film thickness. As the forming method, the photo resist etching method is used. Thus, a high energy confinement is attained at the center of the com-bline electrode so as to improve the resonance efficiency. Further, the size of the element is made small by the improvement of the resonance efficiency.

28. 发明专利

JPH03278606A SURFACE ACOUSTIC WAVE RESONATOR AND COMMUNICATION EQUIPMENT USING THE SAME 失效
公开(公告)号：JPH03278606A
公开(公告)日：1991-12-10
申请号：JP7685490
申请日：1990-03-28
申请人： HITACHI LTD
发明人： TAKEMA TAKEMITSU
IPC分类号： H03H9/145 , H03H9/25
摘要： PURPOSE:To eliminate disturbance in a reflecting wave from each electrode finger and to suppress a side lobe by adjusting a space width of an electrode finger extraction part of an extract system weighting reflector by a specific space width. CONSTITUTION:An interdigital electrode 2 and a grating reflector electrode 3 are formed on a piezoelectric substrate 1 and quantization weighting in a way of a cosine function is applied to the grating reflector electrode 3 to suppress the reflection other than a stop band. Then the electrode extracted from the grating reflector electrode 3 has a space length being a same space length as the electrode width in addition to a space length to correct a phase lag due to the energy storage effect. Thus, the disturbance in the phase of a reflecting wave is corrected to make the phases of reflecting waves from each electrode finger are made coincident and the excellent reflecting characteristic suppressing a side lobe is realized.

29. 发明专利

JPH02272817A SURFACE ACOUSTIC WAVE DEVICE, ITS MANUFACTURE AND COMMUNICATION EQUIPMENT USING THE DEVICE 失效
公开(公告)号：JPH02272817A
公开(公告)日：1990-11-07
申请号：JP9282489
申请日：1989-04-14
申请人： HITACHI LTD
发明人： SHIBA TAKASHI , TAKEMA TAKEMITSU , HIKINO OSAMU , YAMADA JUN
IPC分类号： H03H3/08 , H03H9/02 , H03H9/145 , H03H9/64
摘要： PURPOSE:To improve the deterioration of a characteristic beyond a band owing to a diffraction effect by installing a waveguide which feeds disturbance to the propagation direction of a wave propagated in a direction which is obliquely inclined with respect to the propagation direction of a surface acoustic wave. CONSTITUTION:Acoustic materials 4 are applied on both sides of input output interdigital electrodes 2 and 3 for suppressing a reflected wave from an end surface. A metallic film 5 is formed between the input output interdigital electrodes 2 and 3 and a part 6 where the metallic film does not exist is formed in the metallic film 5 in a V-shaped. Then, a diffraction wave is totally reflected by an interface 7 between a part where the metallic film exists and the part where the metallic film does not exist 6, and disturbance is given to the propagation direction of the wave propagated to the obliquely inclined direction with respect to the propagation direction of the surface acoustic wave propagated to a vertical direction with respect to the digits of the interdigital electrodes 2 and 3, whereby an output-side is prevented from receiving disturbance. Thus, the correlation characteristic of an input/output is deteriorated, and the diffraction wave can effectively be suppressed. Consequently, a suppression degree beyond the filter band improves, and the interference removing performance of the filter improves.

30. 发明专利

JPH01292908A SURFACE ACOUSTIC WAVE FILTER 失效
公开(公告)号：JPH01292908A
公开(公告)日：1989-11-27
申请号：JP12175188
申请日：1988-05-20
申请人： HITACHI LTD
发明人： TAKEMA TAKEMITSU , SHIBA TAKASHI
IPC分类号： H03H9/145 , H03H3/08 , H03H9/64
摘要： PURPOSE:To prevent the preparation of a device from being difficult even when a frequency goes to be high while an unnecessary reflected wave is suppressed by selecting the material and film thickness of an electrode so that the reflection factor of a surface acoustic wave, which is caused by short-circuit due to the metallic electrode of a substrate electric field, can be zero. CONSTITUTION:A surface acoustic filter is composed of a substrate 1 and two interdigital solid type electrodes 2 and the material and film thickness of the electrode are selected so that the reflection factor of the surface acoustic wave, which is caused by the short-circuit due to the metallic electrode 2 in the electric field of the substrate 1, can be zero. Accordingly, in comparison with a conventional method, an electrode goes to be almost double and electrode operation goes to be easy. Thus, the necessary reflected wave is suppressed and an amplitude ripple and a group delay time ripple are decreased. Then, a problem that the width of the electrode goes to be narrow and the preparation of the device goes to be difficult with accompanying the high frequency is erased.

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